Patents by Inventor Yasuhiro Inokuchi
Yasuhiro Inokuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20110226418Abstract: In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a substrate processing apparatus comprising: a process chamber configured to process a substrate; a heater configured to heat an inside of the process chamber; a gas supply pipe installed in the process chamber; a gas supply system configured to supply at least a cleaning gas to the gas supply pipe to introduce the cleaning gas into the process chamber; and a control unit configured to control the heater and gas supply system with the substrate unloaded from the process chamber to perform heating an inside of the process chamber to generate a crack in a thin film formed inside the process chamber; decreasing an inside temperature of the process chamber after the crack is generated in the thin film; and introducing the cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the inside temperature of the process chamber is decreased.Type: ApplicationFiled: June 1, 2011Publication date: September 22, 2011Inventors: Kiyohisa ISHIBASHI, Yasuhiro Inokuchi, Atsushi Moriya, Yoshiaki Hashiba
-
Patent number: 8020514Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: January 21, 2009Date of Patent: September 20, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 8012885Abstract: To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a semiconductor device for placing in a processing chamber a substrate having at least a silicon surface and an insulating film surface on a surface; and allowing an epitaxial film to selectively grow only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a heating unit disposed outside of the processing chamber, includes a substrate loading step of loading the substrate into the processing chamber; a pre-processing step of supplying dichlorosilane gas and hydrogen gas into the processing chamber while maintaining a temperature in the substrate processing chamber to a prescribed temperature of 700° C.Type: GrantFiled: April 1, 2008Date of Patent: September 6, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Yasuhiro Inokuchi, Atsushi Moriya, Yasuhiro Ogawa
-
Publication number: 20110212623Abstract: It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.Type: ApplicationFiled: May 10, 2011Publication date: September 1, 2011Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takashi Yokogawa, Yasuhiro Inokuchi, Katsuhiko Yamamoto, Yoshiaki Hashiba, Yasuhiro Ogawa
-
Patent number: 7861668Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: October 31, 2007Date of Patent: January 4, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 7851379Abstract: There are provided a substrate processing method and apparatus adapted to prevent deterioration of film thickness uniformity while maintaining the film forming rate. The substrate processing method comprises: (a) accommodating a plurality of substrates in a process chamber by carrying and stacking the substrates in the process chamber, (b) forming first amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying first gas, and (c) forming second amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying second gas different from the first gas. The first gas is higher order gas than the second gas.Type: GrantFiled: March 25, 2009Date of Patent: December 14, 2010Assignee: Hitachi Kokusai Electric, Inc.Inventors: Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
-
Publication number: 20100154711Abstract: Films are formed on a plurality of substrates through a batch process while preventing formation of films on the rear surfaces of the substrates. For this, a substrate processing apparatus comprises a reaction vessel, supports, a support holder, and an induction heating device. The reaction vessel is configured to process substrates therein. The supports are made of a conductive material and having a disk shape, and each of the supports is configured to accommodate a substrate in its concave part in a state where the substrate is horizontally positioned with a top surface of the substrate being exposed. The concave part is formed concentrically with a circumference of the support, and a difference between radii of the support and the concave part is greater than a distance between neighboring two of the supports held by the support holder. The support holder is configured to hold at least the supports horizontally in multiple stages.Type: ApplicationFiled: December 22, 2009Publication date: June 24, 2010Applicant: HITACHI-KOKUSAI ELECTRIC INC.Inventors: Kiyohisa ISHIBASHI, Fumihide IKEDA, Masaaki UENO, Takahiro MAEDA, Yasuhiro INOKUCHI, Yasuo KUNII, Hidehiro YANAGAWA
-
Publication number: 20100151682Abstract: Formation of a boron (B) compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron (B)-doped silicon film by simultaneously supplying at least a gas containing boron (B) as a constituent element and a gas containing chlorine (Cl) as a constituent element to a gas supply nozzle installed in a process chamber in a manner such that concentration of chlorine (Cl) is higher than concentration of boron (B) in the gas supply nozzle.Type: ApplicationFiled: December 14, 2009Publication date: June 17, 2010Applicant: HITACHI-KOKUSAI ELECTRIC INC.Inventors: Atsushi MORIYA, Tetsuya MARUBAYASHI, Yasuhiro INOKUCHI
-
Publication number: 20100087068Abstract: In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, the method including: loading a substrate into a process chamber; forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; unloading the substrate from the process chamber; heating an inside of the process chamber; decreasing an inside temperature of the process chamber after the heating of the inside of the process chamber; and introducing cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the decreasing of the inside temperature of the process chamber.Type: ApplicationFiled: October 1, 2009Publication date: April 8, 2010Inventors: Kiyohisa Ishibashi, Yasuhiro Inokuchi, Atsushi Moriya, Yoshiaki Hashiba
-
Publication number: 20090325366Abstract: There are provided a substrate processing method and apparatus adapted to prevent deterioration of film thickness uniformity while maintaining the film forming rate. The substrate processing method comprises: (a) accommodating a plurality of substrates in a process chamber by carrying and stacking the substrates in the process chamber, (b) forming first amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying first gas, and (c) forming second amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying second gas different from the first gas. The first gas is higher order gas than the second gas.Type: ApplicationFiled: March 25, 2009Publication date: December 31, 2009Inventors: Atsushi MORIYA, Yasuhiro Inokuchi, Yasuo Kunii
-
Publication number: 20090253265Abstract: Provided is a method and a substrate processing apparatus for fabricating a semiconductor device by forming a film at a relatively high rate without etching an N+ substrate. In the method, a silicon substrate is loaded into a processing chamber in a first step. In a second step, at least a first silane-based gas and a first etching gas is supplied to the processing chamber while heating the semiconductor substrate. In a third step, at least a second silane-based gas and a second etching gas is supplied to the processing chamber while heating the semiconductor substrate.Type: ApplicationFiled: September 24, 2008Publication date: October 8, 2009Inventors: Yasuhiro Inokuchi, Atsushi Moriya
-
Publication number: 20090159440Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied.; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: February 20, 2009Publication date: June 25, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
-
Publication number: 20090133630Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: January 21, 2009Publication date: May 28, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
-
Publication number: 20090116936Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube, a substrate holder, a gas nozzle, a heating unit, a temperature detector, and an exhaust unit. The reaction tube accommodates and processes substrates. The substrate holder holds substrates stacked at predetermined intervals in the reaction tube. The gas nozzle is installed along a stacked direction of the substrates. The heating unit heats the substrates. The temperature detector is installed along the stacked direction of the substrates. The exhaust unit exhausts an inside atmosphere of the reaction tube. Each of the gas nozzle and the temperature detector includes first and second parts and is supported by a narrow tube supporting member including first and second supporting parts. The first supporting part makes contact with the first part. The second supporting part is parallel with the second part and supports the second part.Type: ApplicationFiled: October 21, 2008Publication date: May 7, 2009Inventors: Tetsuya MARUBAYASHI, Yasuhiro Inokuchi
-
Publication number: 20090104740Abstract: Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.Type: ApplicationFiled: July 25, 2006Publication date: April 23, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yasuhiro Inokuchi, Astushi Moriya, Kastusuhiko Yamamoto, Yoshiaki Hashiba, Takashi Yokogawa
-
Publication number: 20080251008Abstract: Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.Type: ApplicationFiled: March 11, 2005Publication date: October 16, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
-
Publication number: 20080242064Abstract: To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a semiconductor device for placing in a processing chamber a substrate having at least a silicon surface and an insulating film surface on a surface; and allowing an epitaxial film to selectively grow only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a hearting unit disposed outside of the processing chamber, includes a substrate loading step of loading the substrate into the processing chamber; a pre-processing step of supplying dichlorsilane gas and hydrogen gas into the processing chamber while maintaining a temperature in the substrate processing chamber to a prescribed temperature of 700° C.Type: ApplicationFiled: April 1, 2008Publication date: October 2, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yasuhiro INOKUCHI, Atsushi MORIYA, Yasuhiro OGAWA
-
Publication number: 20080199610Abstract: To move a substrate mounting part, on which substrates are stacked and mounted, when processing gas is supplied into a processing chamber and processing is applied to a surface of each substrate.Type: ApplicationFiled: February 19, 2008Publication date: August 21, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yasuhiro Inokuchi, Katsuhiko Yamamoto, Atsushi Moriya
-
Publication number: 20080135516Abstract: It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.Type: ApplicationFiled: November 8, 2007Publication date: June 12, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takashi Yokogawa, Yasuhiro Inokuchi, Katsuhiko Yamamoto, Yoshiaki Hashiba, Yasuhiro Ogawa
-
Publication number: 20080093215Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: October 31, 2007Publication date: April 24, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU