Patents by Inventor Yasuhiro Inokuchi
Yasuhiro Inokuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080066681Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: October 31, 2007Publication date: March 20, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Publication number: 20080060580Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: October 31, 2007Publication date: March 13, 2008Applicant: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
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Publication number: 20070246355Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: March 20, 2007Publication date: October 25, 2007Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
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Patent number: 6949474Abstract: This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controller 61 controls a heater 2 so that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controller 62 provides a reactive gas into a reaction tube 1 during the temperature regulating process, it controls a valve 31 to stop it during the temperature changing process.Type: GrantFiled: February 6, 2003Date of Patent: September 27, 2005Assignee: Hitachi Kokusai Electric Inc.Inventors: Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii, Junichi Murota
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Patent number: 6872636Abstract: A semiconductor device fabricating method includes the step of supplying BCl3 as a doping gas, SiH4 as a film forming gas, and H2 as a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH4, BCl3 and H2 flow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700° C.Type: GrantFiled: March 20, 2002Date of Patent: March 29, 2005Assignee: Hitachi Kokusai Electric Inc.Inventors: Atsushi Moriya, Yasuhiro Inokuchi, Takaaki Noda, Yasuo Kunii
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Patent number: 6764916Abstract: A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains, and forming a Ta2O5 film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480° C. or lower, using a gas obtained by vaporizing Ta(OC2H5)5 as a tantalum source gas.Type: GrantFiled: September 29, 1999Date of Patent: July 20, 2004Assignee: Hitachi Kokusai Electric Inc.Inventors: Ryoichi Furukawa, Tadanori Yoshida, Masayuki Tsuneda, Yasuhiro Inokuchi, Satoru Tagami
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Publication number: 20040007185Abstract: This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controller 61 controls a heater 2 so that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controller 62 provides a reactive gas into a reaction tube 1 during the temperature regulating process, it controls a valve 31 to stop it during the temperature changing process.Type: ApplicationFiled: February 6, 2003Publication date: January 15, 2004Applicant: Hitachi Kokusai Electric Inc.Inventors: Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii, Junichi Murota
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Publication number: 20030164143Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: January 9, 2003Publication date: September 4, 2003Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 6503079Abstract: An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21.Type: GrantFiled: January 10, 2002Date of Patent: January 7, 2003Assignee: Hitachi Kokusai Electric Inc.Inventors: Minoru Kogano, Yasuhiro Inokuchi, Makoto Sambu, Atsushi Moriya, Yasuo Kunii
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Publication number: 20020168866Abstract: A semiconductor device fabricating method includes the step of supplying BCl3 as a doping gas, SiH4 as a film forming gas, and H2 as a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH4, BCl3 and H2 flow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700° C.Type: ApplicationFiled: March 20, 2002Publication date: November 14, 2002Applicant: Hitachi Kokusai Electric Inc.Inventors: Atsushi Moriya, Yasuhiro Inokuchi, Takaaki Noda, Yasuo Kunii
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Patent number: 6462411Abstract: A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.Type: GrantFiled: December 4, 1998Date of Patent: October 8, 2002Assignee: Kokusai Electric Co., LTDInventors: Tomoji Watanabe, Nobuyuki Mise, Toshiyuki Uchino, Norio Suzuki, Yoshihiko Sakurai, Toshiya Uenishi, Yohsuke Inoue, Yasuhiro Inokuchi, Fumihide Ikeda
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Publication number: 20020094502Abstract: An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21.Type: ApplicationFiled: January 10, 2002Publication date: July 18, 2002Applicant: Hitachi Kokusai Electric Inc.Inventors: Minoru Kogano, Yasuhiro Inokuchi, Makoto Sambu, Atsushi Moriya, Yasuo Kunii
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Patent number: 6332927Abstract: A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.Type: GrantFiled: September 25, 2000Date of Patent: December 25, 2001Assignee: Kokusai Electric Co., Ltd.Inventors: Yasuhiro Inokuchi, Fumihide Ikeda
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Publication number: 20010019902Abstract: A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vapType: ApplicationFiled: May 7, 2001Publication date: September 6, 2001Applicant: Kokusai Electric co., Ltd.Inventors: Yasuhiro Inokuchi, Fumihide Ikeda
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Patent number: 6270581Abstract: A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vapType: GrantFiled: February 12, 1998Date of Patent: August 7, 2001Assignee: Kokusai Electric Co., Ltd.Inventors: Yasuhiro Inokuchi, Fumihide Ikeda
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Patent number: 6217663Abstract: A substrate processing apparatus comprises a hot-wall type processing chamber for processing a substrate, a heater capable of heating an interior of the processing chamber, a substrate holder capable of holding the substrate and processing the substrate in the processing chamber in a state where the substrate holder holds the substrate, and a mechanism, which is capable of allowing the substrate holder to hold the substrate and then transferring the substrate holder holding the substrate into the processing chamber, and/or which is capable of carrying out the substrate holder from the processing chamber in a state where the substrate holder holds the substrate, and then separating the substrate from the substrate holder.Type: GrantFiled: June 20, 1997Date of Patent: April 17, 2001Assignee: Kokusai Electric Co., Ltd.Inventors: Yasuhiro Inokuchi, Fumihide Ikeda, Michiko Nishiwaki, Masatoshi Takada, Mamoru Sueyoshi
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Patent number: 6139641Abstract: A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.Type: GrantFiled: June 24, 1997Date of Patent: October 31, 2000Assignee: Kokusai Electric Co., Ltd.Inventors: Yasuhiro Inokuchi, Fumihide Ikeda
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Patent number: 6132553Abstract: A substrate processing apparatus includes a reaction container for processing a substrate therein. The reaction container is provided with two open ends. The reaction container includes a central cylindrical body and two flanges respectively provided at the both open ends. The central cylindrical body includes at its both ends thin portion which are thinner than the central portion of the central cylindrical body, the flanges are respectively provided with flange connecting portions which are thinner than the central portion of the central cylindrical body, and the thin portions of the central cylindrical body and the flange connecting portions are welded together.Type: GrantFiled: June 4, 1998Date of Patent: October 17, 2000Assignee: Kokasai Electric Co., Ltd.Inventors: Fumihide Ikeda, Yasuhiro Inokuchi
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Patent number: 5960159Abstract: A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.Type: GrantFiled: October 14, 1997Date of Patent: September 28, 1999Assignee: Kokusai Electric Co., Ltd.Inventors: Fumihide Ikeda, Junichi Machida, Masayuki Tomita, Yasuhiro Inokuchi, Kazuhiro Shimeno, Hisashi Nomura, Tetsuaki Inada