Abstract: To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a semiconductor device for placing in a processing chamber a substrate having at least a silicon surface and an insulating film surface on a surface; and allowing an epitaxial film to selectively grow only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a hearting unit disposed outside of the processing chamber, includes a substrate loading step of loading the substrate into the processing chamber; a pre-processing step of supplying dichlorsilane gas and hydrogen gas into the processing chamber while maintaining a temperature in the substrate processing chamber to a prescribed temperature of 700° C.

Abstract: To move a substrate mounting part, on which substrates are stacked and mounted, when processing gas is supplied into a processing chamber and processing is applied to a surface of each substrate.

Abstract: It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controller 61 controls a heater 2 so that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controller 62 provides a reactive gas into a reaction tube 1 during the temperature regulating process, it controls a valve 31 to stop it during the temperature changing process.

Abstract: A semiconductor device fabricating method includes the step of supplying BCl3 as a doping gas, SiH4 as a film forming gas, and H2 as a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH4, BCl3 and H2 flow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700° C.

Abstract: A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains, and forming a Ta2O5 film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480° C. or lower, using a gas obtained by vaporizing Ta(OC2H5)5 as a tantalum source gas.

Abstract: This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controller 61 controls a heater 2 so that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controller 62 provides a reactive gas into a reaction tube 1 during the temperature regulating process, it controls a valve 31 to stop it during the temperature changing process.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21.

Abstract: A semiconductor device fabricating method includes the step of supplying BCl3 as a doping gas, SiH4 as a film forming gas, and H2 as a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH4, BCl3 and H2 flow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700° C.

Abstract: A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.

Abstract: An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21.

Abstract: A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.

Abstract: A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vap

Abstract: A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vap

Abstract: A substrate processing apparatus comprises a hot-wall type processing chamber for processing a substrate, a heater capable of heating an interior of the processing chamber, a substrate holder capable of holding the substrate and processing the substrate in the processing chamber in a state where the substrate holder holds the substrate, and a mechanism, which is capable of allowing the substrate holder to hold the substrate and then transferring the substrate holder holding the substrate into the processing chamber, and/or which is capable of carrying out the substrate holder from the processing chamber in a state where the substrate holder holds the substrate, and then separating the substrate from the substrate holder.