Patents by Inventor Yasuhiro Iwamura

Yasuhiro Iwamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090014638
    Abstract: Provided are a security gate system and a security gate control method capable of accurately inspecting inspection targets in a short period of time. The security gate system includes a main route 2; a mass spectrograph 3 for analyzing a sample (for example, a ticket) obtained from an inspection target (for example, a facility user at an airport, etc.) moving in the main route 2; at least one branch route 10 that is divided from the main route 2 at the downstream side of a position where the sample is obtained in the moving direction of the inspection target; gates (a first gate 5 and a second gate 6), which are provided at branch sections of the branch route 10 for switching a flow path of the inspection target; and a control apparatus 20 for performing control to switch between the gates 5 and 6 based on an analysis result of the mass spectrograph 3.
    Type: Application
    Filed: January 11, 2007
    Publication date: January 15, 2009
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD
    Inventors: Takehiko Itou, Shizuma Kuribayashi, Yasuhiro Iwamura, Shigehiro Nukatsuka, Shigenori Tsuruga, Shinya Ishii
  • Publication number: 20060013275
    Abstract: A semiconductor laser device 1 has, arranged inside an airtight-sealed package 2, a semiconductor laser element 3 having an active region made of one material selected from the group consisting of an AlGaAs-based crystal, an AlGaInP-based crystal, an AlGaN-based crystal, and an InGaN-based crystal. The atmospheric gas inside the package 2 contains oxygen. The semiconductor laser element 3 has a dielectric oxide film formed on the laser emission surface thereof. The atmospheric gas is a mixture of oxygen and nitrogen, with an oxygen content of 20% or more.
    Type: Application
    Filed: April 23, 2004
    Publication date: January 19, 2006
    Inventors: Massashi Watanabe, Shoji Honda, Yasuhiro Iwamura, Gen Shimizu, Tetsuro Inoue
  • Publication number: 20030210759
    Abstract: The present invention produces nuclide transmutation using a relatively small-scale device. The device 10 that produces nuclide transmutation comprises a structure body 11 that is substantially plate shaped and made of palladium (Pd) or palladium alloy, or another metal that absorbs hydrogen (for example, Ti) or an alloy thereof, and a material 14 that undergoes nuclide transmutation laminated on one surface 11A among the two surfaces of this structure body 11. The one surface 11A side of the structure body 11, for example, is made a region in which the pressure of the deuterium is high due to pressure or electrolysis and the like, and the other surface 11B side, for example, is a region in which the pressure of the deuterium is low due to vacuum exhausting and the like, and thereby, a flow of deuterium in the structure body 11 is produced, and nuclide transmutation is carried out by a reaction between the deuterium and the material 14 that undergoes nuclide transmutation.
    Type: Application
    Filed: February 27, 2003
    Publication date: November 13, 2003
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Yasuhiro Iwamura, Takehiko Itoh, Mitsuru Sakano
  • Publication number: 20020080903
    Abstract: The present invention produces nuclide transmutation using a relatively small-scale device. The device 10 that produces nuclide transmutation comprises a structure body 11 that is substantially plate shaped and made of palladium (Pd) or palladium alloy, or another metal that absorbs hydrogen (for example, Ti) or an alloy thereof, and a material 14 that undergoes nuclide transmutation laminated on one surface 11A among the two surfaces of this structure body 11. The one surface 11A side of the structure body 11, for example, is made a region in which the pressure of the deuterium is high due to pressure or electrolysis and the like, and the other surface 11B side, for example, is a region in which the pressure of the deuterium is low due to vacuum exhausting and the like, and thereby, a flow of deuterium in the structure body 11 is produced, and nuclide transmutation is carried out by a reaction between the deuterium and the material 14 that undergoes nuclide transmutation.
    Type: Application
    Filed: October 19, 2001
    Publication date: June 27, 2002
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Yasuhiro Iwamura, Takehiko Itoh, Mitsuru Sakano