Abstract: A highly reliable display device with high display quality is provided. The display device includes a first light-emitting element, a second light-emitting element provided to be adjacent to the first light-emitting element, a first protective layer, a second protective layer, and an insulating layer. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. The first EL layer is provided over the first pixel electrode, and the second EL layer is provided over the second pixel electrode. The first protective layer includes a region in contact with the side surface of the first EL layer, and the second protective layer includes a region in contact with the side surface of the second EL layer. The insulating layer is provided between the first protective layer and the second protective layer.

Abstract: A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed.

Abstract: Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.

Abstract: A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

Abstract: A display device capable of displaying a high-quality image is provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first lower electrode, a first light-emitting layer over the first lower electrode, and a first upper electrode over the first light-emitting layer. The second light-emitting element includes a second lower electrode, a second light-emitting layer over the second lower electrode, and a second upper electrode over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is between the first upper electrode and first light-emitting layer and the second upper electrode and second light-emitting layer. The first upper electrode includes a region projecting from a side surface of the first light-emitting layer. The second upper electrode includes a region projecting from a side surface of the second light-emitting layer.

Abstract: A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.

Abstract: A highly reliable display device is provided. The display device including a light-emitting element and an insulating layer placed to cover the light-emitting element and the light-emitting element includes a first conductive layer, an EL layer over the first conductive layer, and a second conductive layer over the EL layer and the insulating layer includes a first layer, a second layer over the first layer, and a third layer over the second layer and the first layer has a function of capturing or fixing at least one of water and oxygen, the second layer has a function of inhibiting diffusion of at least one of water and oxygen, and the third layer has a higher concentration of carbon than at least one of the first layer and the second layer.

Abstract: A method for depositing a metal oxide is provided. The deposition method of a metal oxide includes a first step of introducing a first precursor into a first chamber, a second step of introducing a second precursor into the first chamber, a third step of introducing a third precursor into the first chamber, a fourth step of introducing an oxidizer in a plasma state into the first chamber after each of the first step, the second step, and the third step, and a fifth step of performing microwave treatment. Performing each of the first to fourth steps one or more times is regarded as one cycle, and the fifth step is performed in a second chamber after the one cycle is repeated a plurality of times.

Abstract: A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed.

Abstract: Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.

Abstract: A ferroelectric device having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor over a first insulator, a ferroelectric layer over the first conductor, a second conductor over the ferroelectric layer, a second insulator over the second conductor, and a third insulator surrounding the first conductor, the ferroelectric layer, the second conductor, and the second insulator. The second insulator has a function of capturing or fixing hydrogen, and the third insulator has a function of inhibiting hydrogen diffusion.

Abstract: A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

Abstract: A ferroelectric device including a metal oxide film having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor, a metal oxide film over the first conductor, and a second conductor over the metal oxide film. The metal oxide film has ferroelectricity. The metal oxide film has a crystal structure. The crystal structure includes a first layer and a second layer. The first layer contains first oxygen and hafnium. The second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other through the first oxygen. The second oxygen is bonded to the zirconium.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

Abstract: A metal oxide with excellent thickness uniformity is provided. A method for manufacturing a metal oxide with reduced hydrogen concentration in SIMS analysis includes a first step of introducing a precursor and a carrier/purge gas; a second step of stopping the introduction of the precursor and exhausting the precursor; a third step of introducing an oxidizing gas; and a fourth step of stopping the introduction of the oxidizing gas and exhausting the oxidizing gas. The first step to the fourth step are performed in a temperature range higher than or equal to 210° C. and lower than or equal to 300° C.

Abstract: A semiconductor device with a small variation in characteristics is provided. In a manufacturing method of a semiconductor device including a capacitor with reduced leak current, a first conductor is formed; a second insulator is formed over the first conductor; a third insulator is formed over the second insulator; a second conductor is formed over the third insulator; a fourth insulator is deposited over the second conductor and the third insulator; by heat treatment, hydrogen contained in the third insulator diffuses into or is absorbed by the second insulator; the first conductor is one electrode of the capacitor; the second conductor is the other electrode of the capacitor; and each of the second insulator and the third insulator is a dielectric of the capacitor.

Abstract: A display device that can switch between normal display and see-through display is provided. Visibility in see-through display is improved. A liquid crystal element overlaps with a light-emitting element. The light-emitting element, a transistor, and the like overlapping with the liquid crystal element transmit visible light. When the liquid crystal element blocks external light, an image is displayed with the light-emitting element. When the liquid crystal element transmits external light, an image displayed with the light-emitting element is superimposed on a transmission image through the liquid crystal element.

Abstract: A method for modifying an insulating film is provided. The method includes a first step of preparing an insulating film containing hydrogen, and a second step of performing microwave treatment on the insulating film to release the hydrogen in the insulating film as water molecules, so that a hydrogen concentration in the insulating film is reduced. Note that the microwave treatment is preferably performed using an oxygen gas and an argon gas at a temperature range of higher than or equal to 200° C. and lower than or equal to 300° C., and the proportion of the flow rate of the oxygen gas to the total of the flow rate of the oxygen gas and the flow rate of the argon gas is preferably greater than 0 % and less than or equal to 50 %.

Abstract: A light-emitting device can be folded in such a manner that a flexible light-emitting panel is supported by a plurality of housings which are provided spaced from each other and the light-emitting panel is bent so that surfaces of adjacent housings are in contact with each other. Furthermore, in the light-emitting device, in which part or the whole of the housings have magnetism, the two adjacent housings can be fixed to each other by a magnetic force when the light-emitting device is used in a folded state.

Abstract: A memory device having large memory capacity is provided. A highly reliable memory device is provided. A semiconductor device includes a first conductive layer extending in a first direction, a structure body extending in a second direction intersecting with the first direction, a first insulating layer, and a second insulating layer. The structure body includes a functional layer, a semiconductor layer, a third insulating layer, and a second conductive layer. In an intersection portion of the first conductive layer and the structure body, the third insulating layer, the semiconductor layer, and the functional layer are placed concentrically around the second conductive layer in this order. The first insulating layer and the second insulating layer are stacked in the second direction. The functional layer and the first conductive layer are placed between the first insulating layer and the second insulating layer.