Abstract: The present invention relates to a defect inspection apparatus for a phase shift mask that is capable of detecting phase shifter defects that cannot be detected by conventional inspection techniques, by a simple method using an optical method and a comparison of electric signals. In a defect inspection apparatus for a phase shift mask having a phase shifter pattern provided on a mask transparent substrate 1 to produce a phase difference in transmitted light, after the phase shifter pattern has been formed, a phase shifter defect inspection is performed from the mask transparent substrate 1 side of the phase shift mask 1. To perform the defect inspection, light 12 is applied to the phase shift mask 1 from the mask transparent substrate 1 side thereof, and reflection images of at least two different phase shifter pattern fabricated regions are captured by photoelectric conversion light-receiving elements 15a and 15b.

Abstract: A secondary charged particle image acquisition method and its apparatus for detecting a secondary charged particle image. The method includes the steps of irradiating a surface of a specimen with a focused charged particle beam and detecting a secondary charged particle emanated from the surface of the specimen, obtaining a secondary charged particle image based on the detected secondary charged particle, irradiating a positive ion beam on the surface of the specimen where the focused charged particle beam is irradiated and inducing a conductive layer on the surface of the specimen by the irradiation of the positive ion beam and diffusing an electric charge on the surface of the conductive layer.

Abstract: In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.

Abstract: In order to improve the inspection efficiency of a photomask having a phase shifter pattern, the inspection of the photomask having the phase shifter pattern is divided into three steps, an anomaly extraction step, a first anomaly discrimination step and a second anomaly discrimination step. These inspection steps are performed at different inspection regions. An anomaly extraction station 7 for the anomaly extraction inspects the presence or absence of an anomaly for all the regions of the photomask 1. An anomaly discrimination station 8 for the anomaly discrimination classifies the content of the anomaly. A phase difference measurement station 9 for the anomaly discrimination measures the phase difference error.

Abstract: A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

Abstract: An optical mask for a projection optical system and a method of correcting the mask wherein the mask includes a light intercepting pattern formed on a transparent substrate and a phase shifter for changing the phase of an exposure light provided at predetermined openings of the light intercepting pattern. An etching stopper film which transmits the exposure light is provided between said phase shifter and said light intercepting pattern and for correction of the mask a focused ion beam is utilized for removal of defects by the phase shifter.

Abstract: A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase sh

Abstract: A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

Abstract: Exposure of fine patterns on a photoresist is carried out by controlling the humidity and temperature of a gas to be supplied to an exposure apparatus separate from the ambient atmosphere.Temperature of the atmosphere at least in the vicinity of a photoresist is controlled in a predetermined range and air or gas to be supplied to the exposure space is humidified to a desired degree.Water content in the photoresist is kept uniform and constant by the specially controlled atmosphere and enables uniform pattern width of the exposed fine pattern all over the photoresist surface.

Abstract: A photo-mask is mounted on a repairing chamber, with its mask pattern forming surface being exposed to the interior of the chamber. Vaporized repairing material which includes a metallic element is introduced into the chamber, and a laser beam is projected from the exterior of the chamber onto a transparent defect of the mask pattern. The irradiated portion is heated and the vaporized repairing material at the heated portion is resolved, resulting in the metal resolved from the repairing material deposits and fills the transparent defect. Thus, transparent defects of a mask pattern can be repaired in a simplified process.