Abstract: To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

Abstract: To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

Abstract: A plasma processing method which performs plasma processing on a sample by a plurality of steps includes a first step of stopping supply of gas of one step while supplying an inert gas and a second step stopping the supply of the inert gas of the first step while as supplying a gas of the other step after the first step. An amount of the gas of the one step remaining inside a process chamber in which the sample is plasma-processed is detected in the first step. An amount of the gas of the other step reached inside the process chamber is detected in the second step. The one step is switched to the other step based on the amount of the gas of the one step detected in the first step and the amount of the gas of the other step detected in the second step.

Abstract: A plasma processing method which performs plasma processing on a sample by a plurality of steps includes a first step of stopping supply of gas of one step while supplying an inert gas and a second step stopping the supply of the inert gas of the first step while as supplying a gas of the other step after the first step. An amount of the gas of the one step remaining inside a process chamber in which the sample is plasma-processed is detected in the first step. An amount of the gas of the other step reached inside the process chamber is detected in the second step. The one step is switched to the other step based on the amount of the gas of the one step detected in the first step and the amount of the gas of the other step detected in the second step.

Abstract: An object is to provide a cooling unit which can reduce influence of radiation heat from a work piece having high temperature on members surrounding the work piece, prevent leak of coolant and vacuum leak, reduce cost, and prevent turning angle of a work piece conveying mechanism from being limited. The cooling unit is attached to the work piece conveying mechanism in the state that the outer wall part is in close contact with the to-be-cooled surface. The coolant stored in the lower space is evaporated by the heat transmitted from the to-be-cooled surface P via the outer wall part, and the to-be-cooled surface is cooled via the outer wall part by the heat of evaporation lost at the time of the evaporation of the coolant. The vapor in the lower space (coolant container) is discharged to the vacuum chamber by the vapor exhaust unit when the pressure of the vapor in the lower space reaches the fixed value or higher.

Abstract: To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

Abstract: In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

Abstract: An object is to provide a cooling unit which can reduce influence of radiation heat from a work piece having high temperature on members surrounding the work piece, prevent leak of coolant and vacuum leak, reduce cost, and prevent turning angle of a work piece conveying mechanism from being limited. The cooling unit is attached to the work piece conveying mechanism in the state that the outer wall part is in close contact with the to-be-cooled surface. The coolant stored in the lower space is evaporated by the heat transmitted from the to-be-cooled surface P via the outer wall part, and the to-be-cooled surface is cooled via the outer wall part by the heat of evaporation lost at the time of the evaporation of the coolant. The vapor in the lower space (coolant container) is discharged to the vacuum chamber by the vapor exhaust unit when the pressure of the vapor in the lower space reaches the fixed value or higher.

Abstract: The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.

Abstract: A conveying device A is disposed inside a vacuum chamber B, includes a fixation base 1; a swivel base which is held rotatably with respect to the fixation base 1; linear movement mechanisms 3A, 3B supported by the swivel base 2; and hands 4A, 4B supported by the linear movement mechanisms 3A, 3B; and a transports work W placed on the hands 4A, 4B by operation of the linear movement mechanism 3A, 3B. Radiation plates 62, 63, 65 are provided at appropriate locations on a lower surface side of the swivel base or of the linear movement mechanisms 3A, 3B. The vacuum chamber is provided with heat absorption plates 61, 66 on a wall which faces the lower surface side of the swivel base 2.

Abstract: In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

Abstract: The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile.

Abstract: A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.

Abstract: The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber.

Abstract: The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber.

Abstract: The invention provides a method for determining an end point of seasoning of a plasma processing apparatus capable of reducing the time required for seasoning after performing wet cleaning and determining the optimum end point of seasoning with superior repeatability. The present method comprises, after performing wet cleaning (S501) of the plasma processing apparatus, using a processing gas containing SF6 as processing gas and applying an RF bias double that of mass production conditions to perform seasoning (S502), acquiring emission data of SiF and Ar during plasma processing using test conditions using SiF and Ar gases (S503), determining whether the computed value of emission intensities during seasoning is equal to or smaller than the computed value of emission intensities during stable mass production (S504), and determining the endpoint of the seasoning process when the value is determined to be equal or smaller.

Abstract: The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile.

Abstract: A conveying device A is disposed inside a vacuum chamber B, includes a fixation base 1; a swivel base which is held rotatably with respect to the fixation base 1; linear movement mechanisms 3A, 3B supported by the swivel base 2; and hands 4A, 4B supported by the linear movement mechanisms 3A, 3B; and a transports work W placed on the hands 4A, 4B by operation of the linear movement mechanism 3A, 3B. Radiation plates 62, 63, 65 are provided at appropriate locations on a lower surface side of the swivel base or of the linear movement mechanisms 3A, 3B. The vacuum chamber is provided with heat absorption plates 61, 66 on a wall which faces the lower surface side of the swivel base 2.

Abstract: A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.

Abstract: The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber.