Abstract: A board shield (52) covers a region in which an electronic part is mounted on a lower surface of a circuit board (50). A memory housing chamber (R1) capable of housing a semiconductor memory is secured on the lower side of the circuit board. The board shield (52) includes a shield wall (52e) along the memory housing chamber (R1). With this, it is possible to protect the semiconductor memory while suppressing an increase in the number of parts.

Abstract: In order to increase the order of a frequency of an AC signal to be applied between a vibration section and a sample to an order at substantially the same level as the order of a vibration frequency of the vibration section in measuring a vibration component of the vibration control section, a vibration component measuring device (2) includes: a vibration section (4); a first AC signal generator (20) configured to generate a first AC signal; a second AC signal generator (44) configured to generate a second AC signal having a frequency which is (a) more than one time and less than two times or (b) more than two times and less than three times as high as a frequency of the first AC signal; a signal applying section (14, 56) configured to apply the second AC signal between the vibration section and a sample (X); a vibration control section (10) configured to cause the vibration section to vibrate; and a measuring section (16, 18, 20, 22, 42, 44, 50) configured to measure a varying component of vibration of the v

Abstract: An information processing device generates a prediction output corresponding to input data. The information processing device includes input-node specification processor circuitry, based on the input data, configured to specify input nodes corresponding to the input data and each located on a corresponding one of layers from beginning to end of the learning tree structured, reliability-index acquisition processor circuitry configured to acquire a reliability index obtained through the predetermined learning processing and indicating prediction accuracy, output-node specification processor circuitry, based on the reliability index acquired by the reliability-index acquisition processor circuitry configured to specify, from the input nodes corresponding to the input data, an output node that is the basis of the generation of a prediction output, and prediction-output generation processor circuitry configured to generate a prediction output.

Abstract: In order to increase the order of a frequency of an AC signal to be applied between a vibration section and a sample to an order at substantially the same level as the order of a vibration frequency of the vibration section in measuring a vibration component of the vibration control section, a vibration component measuring device (2) includes: a vibration section (4); a first AC signal generator (20) configured to generate a first AC signal; a second AC signal generator (44) configured to generate a second AC signal having a frequency which is (a) more than one time and less than two times or (b) more than two times and less than three times as high as a frequency of the first AC signal; a signal applying section (14, 56) configured to apply the second AC signal between the vibration section and a sample (X); a vibration control section (10) configured to cause the vibration section to vibrate; and a measuring section (16, 18, 20, 22, 42, 44, 50) configured to measure a varying component of vibration of the v

Abstract: According to one embodiment, an X-ray diagnostic apparatus includes an X-ray irradiator, a scatterer, a grid, and a detector. The X-ray irradiator irradiates X-rays. The scatterer is provided between the X-ray irradiator and an object, that scatters the irradiated X-rays. The grid is provided between the scatterer and the object, that transmits the scattered X-rays within a predetermined angular range. The detector detects X-rays transmitted through the object together with an incident angle of the X-rays.

Abstract: A wrap replacing apparatus according to the embodiments includes: an insertion port into which a medical device wrapped in a first bag is inserted; a peeler configured to peel off the first bag from the medical device inserted into the insertion port; a wrapper configured to wrap in a second bag the medical device from which the first bag is peeled off; and a take-out port from which the medical device wrapped in the second bag is taken out.

Abstract: There is provided an information processing device that generates a prediction output corresponding to input data, the information processing device, including: an input-node specification unit that, based on the input data, specifies input nodes corresponding to the input data and each located on a corresponding one of layers from beginning to end of the learning tree structure; a reliability-index acquisition unit that acquires a reliability index obtained through the predetermined learning processing and indicating prediction accuracy; an output-node specification unit that, based on the reliability index acquired by the reliability-index acquisition unit, specifies, from the input nodes corresponding to the input data, an output node that is the basis of the generation of a prediction output; and a prediction-output generation unit that generates a prediction output, based on the to-be-learned data included in the state space corresponding to the output node specified by the output-node specification unit

Abstract: According to an embodiment, a grid is provided between an X-ray generator and a flat panel detector. Processing circuitry configured to convert original image based on X-rays having passed through the grid and detected into a plurality of pieces of frequency band data, remove interference fringes contained in at least one piece of frequency band data among the pieces of frequency band data, reduce noise contained in the pieces of frequency band data, correct a scattered radiation of the original image based on a scattered radiation contained in the X-rays having passed through the grid and a scattered radiation contained in X-rays having passed through a grid that removes scattered radiation to a larger extent than the grid, and synthesize a plurality of pieces of frequency band data to generate image.

Abstract: An exposure management system according to an embodiment includes a processing circuitry. The processing circuitry is configured to calculate a deviation index related to a difference between a target exposure index indicating an index of an exposure value that is set as a target of an X-ray image taking process and an image-taking-period exposure index indicating an index of an exposure value observed during the X-ray image taking process. The processing circuitry is configured to control so as to cause a display device to display history information from a predetermined time period indicating at least one selected from between image-taking-period exposure indices and deviation indices.

Abstract: An exposure management system according to an embodiment includes a processing circuitry. The processing circuitry is configured to calculate a deviation index related to a difference between a target exposure index indicating an index of an exposure value that is set as a target of an X-ray image taking process and an image-taking-period exposure index indicating an index of an exposure value observed during the X-ray image taking process. The processing circuitry is configured to control so as to cause a display device to display history information from a predetermined time period indicating at least one selected from between image-taking-period exposure indices and deviation indices.

Abstract: According to an embodiment, a grid is provided between an X-ray generator and a flat panel detector. Processing circuitry configured to convert original image based on X-rays having passed through the grid and detected into a plurality of pieces of frequency band data, remove interference fringes contained in at least one piece of frequency band data among the pieces of frequency band data, reduce noise contained in the pieces of frequency band data, correct a scattered radiation of the original image based on a scattered radiation contained in the X-rays having passed through the grid and a scattered radiation contained in X-rays having passed through a grid that removes scattered radiation to a larger extent than the grid, and synthesize a plurality of pieces of frequency band data to generate image.

Abstract: According to one embodiment, an image processing apparatus includes following units. The selection unit selects a pixel from a target image. The first extraction unit extracts a first pixel region including the selected pixel. The second extraction unit extracts a second pixel region from a reference image. The determination unit determines a filter coefficient based on a similarity degree between the first and second pixel regions. The generation unit generates a display image by performing a weighted sum of the target image and a display image generated immediately before the target image, in accordance with the filter coefficient determined for each of the plurality of pixels of the target image.

Abstract: A communication device capable of improving power saving is provided. A communication device (1) includes a communication port (10); communication monitoring sections (18, 22) for controlling information communication using the communication port, a status indicating section (12) having one or more status indicators, a status indicator driving section (20) for controlling a drive signal which detects a communication status from the communication monitoring sections and is supplied to the status indicating section on the basis of the communication status, and a lighting control section (24) for detecting the communication status from the communication monitoring sections and outputting a control signal to the status indicator driving section if the communication status changes from a first status to a second status. The status indicator driving section controls the drive signal so as to turn off the status indicators when the control signal is outputted from the lighting control section.

Abstract: A communication device capable of improving power saving is provided. A communication device (1) includes a communication port (10); communication monitoring sections (18, 22) for controlling information communication using the communication port, a status indicating section (12) having one or more status indicators, a status indicator driving section (20) for controlling a drive signal which detects a communication status from the communication monitoring sections and is supplied to the status indicating section on the basis of the communication status, and a lighting control section (24) for detecting the communication status from the communication monitoring sections and outputting a control signal to the status indicator driving section if the communication status changes from a first status to a second status. The status indicator driving section controls the drive signal so as to turn off the status indicators when the control signal is outputted from the lighting control section.

Abstract: An X-ray flat panel detector includes sensor elements constituted by a plurality of effective pixels that detect X-rays and a plurality of dummy pixels that are arranged adjacent to the effective pixel area and generate electrical signals irrelevant to X-rays, signal lines which read out electrical signals from the respective pixels, scanning lines which scan the respective pixels, a first electrostatic wiring line which distributes static electricity accumulated in the signal lines, and a second electrostatic wiring line which distributes static electricity accumulated in the scanning lines. A plurality of dummy pixels are classified into a DA area where noise superposed on the signal lines are removed and a DB area where noise superposed on the scanning lines are removed. The first and second electrostatic wiring lines are laid out around the sensor elements, and physically disconnected between the DA area and the DB area.

Abstract: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.

Abstract: An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate 1 and having a lower electrode 54, a capacity insulating film 58 and an upper electrode 59. The lower electrode 54 is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film 58 is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.

Abstract: A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

Abstract: An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate 1 and having a lower electrode 54, a capacity insulating film 58 and an upper electrode 59. The lower electrode 54 is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film 58 is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.

Abstract: A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.