Abstract: Capacitors are stretched over a plurality of memory cells in the direction of a bit line in order to effectively utilize spaces between adjacent cells. In addition, by creating a cubic structure of each capacitor by adoption of a self-matching technique, the structure can be utilized more effectively. As a result, it is possible to assure a sufficient capacitor capacitance in spite of a limitation imposed by the fabrication technology and obtain an assurance of sufficient space between cells in a shrunk area of a memory cell accompanying high-scale integration and miniaturization of a semiconductor device.

Abstract: An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate 1 and having a lower electrode 54, a capacity insulating film 58 and an upper electrode 59. The lower electrode 54 is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film 58 is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.

Abstract: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.

Abstract: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.

Abstract: A planar X-ray detector has an X-ray charge conversion film converting an incident X-ray into electric charges, pixel electrodes provided on the X-ray charge conversion film corresponding to respective pixels arranged in an array, switching elements connected to the respective pixel electrodes, signal lines, each of which is connected to a column of switching elements, scanning lines, each of which transmits driving signals to a row of switching elements, and a common electrode provided on the surface of the X-ray charge conversion film opposite to the surface on which the pixel electrodes are provided. The X-ray charge conversion film contains an X-ray sensitive material made of inorganic-semiconductor particles, and a carrier transport material made of an organic semiconductor.

Abstract: An X-ray flat panel detector includes sensor elements constituted by a plurality of effective pixels that detect X-rays and a plurality of dummy pixels that are arranged adjacent to the effective pixel area and generate electrical signals irrelevant to X-rays, signal lines which read out electrical signals from the respective pixels, scanning lines which scan the respective pixels, a first electrostatic wiring line which distributes static electricity accumulated in the signal lines, and a second electrostatic wiring line which distributes static electricity accumulated in the scanning lines. A plurality of dummy pixels are classified into a DA area where noise superposed on the signal lines are removed and a DB area where noise superposed on the scanning lines are removed. The first and second electrostatic wiring lines are laid out around the sensor elements, and physically disconnected between the DA area and the DB area.

Abstract: A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

Abstract: A planar X-ray detector has an X-ray charge conversion film converting an incident X-ray into electric charges, pixel electrodes provided on the X-ray charge conversion film corresponding to respective pixels arranged in an array, switching elements connected to the respective pixel electrodes, signal lines, each of which is connected to a column of switching elements, scanning lines, each of which transmits driving signals to a raw of switching elements, and a common electrode provided on the surface of the X-ray charge conversion film opposite to the surface on which the pixel electrodes are provided. The X-ray charge conversion film contains an X-ray sensitive material made of inorganic semiconductor particles, and a carrier transport material made of an organic semiconductor.

Abstract: A conductive cantilever having a conductive probe on its free end is supported by a piezoelectric element, which oscillates upon reception of an AC voltage from a first AC voltage supply unit. An AC voltage is applied between a conductive sample and the probe by a variable DC voltage supply unit and a second AC voltage supply unit. An AM demodulator demodulates a signal from a displacement meter at an angular frequency of the first AC voltage supply unit. A lowpass filter extracts a DC component from an output signal from the AM demodulator, and a synchronism detector extracts a component concerning to the angular frequency twice as high as that of the second AC voltage supply unit from the AM demodulator output signal. A Z controller controls a position of a tube scanner based on an output signal from the subtracter which subtracts an output signal of the synchronism detector from an output signal of the lowpass filter.

Abstract: In an animation generating method wherein a component of an apparatus to be designed is defined by an instance of an object-oriented program and a figure is allocated to said instance on a computer, and further an animation method for varying a representation of said figure in connection with the operation of the instance is interactively generated, a designation is made of either a slot of said instance, or a method argument of a method effected to said instance, and further a designation is made of a figure attribute of a figure to be changed in an animation representation. In response to this, an animation method for changing the figure attribute is automatically generated with refererence to the slot of the instance, or the method argument of the method effected to the instance.

Abstract: There is provided a technique capable of reducing the electrode resistance by widening the effective area of an electrode in a cell for a standard potential supply connected to the memory cell. There is also provided a technique capable of reducing the memory cell area by reducing the area necessary for separation between the electrode in a cell for the standard potential supply and adjacent other electrodes. Two transfer MOS transistors of a first conductivity type and two driver MOS transistors are provided. A conductive layer for fixing the source potential of the driver MOS transistors to standard potential is so disposed above the transfer and driver MOS transistors as to the wholly cover the memory cell. Separation is carried out by using a photo-mask having an optically transparent substrate provided within the same transmissive portion with a pattern of a plurality of so-called phase shifter regions for inversion of the phase of transmitting light.

Abstract: A scanning probe microscope comprises a cantilever having a conductive probe positioned near a sample, an actuator for moving the sample to and away from the probe, a circuit for applying a bias voltage between the probe and sample to produce a tunnel current therebetween, a circuit for detecting the produced tunnel current, a circuit for detecting the amount of displacement of the probe resultant from interatomic forces acting between atomics of the probe and sample, thereby producing signals, a circuit for providing the actuator for feedback in response to the output signals from the circuit to retain constant the distance between the probe and sample, thereby causing the actuator to move the sample, a circuit for forming an STS image data from the detected tunnel current, a circuit for forming an STM image data from the detected tunnel current, and a circuit for forming an AFM image data. Thus, the STS, STP and AFM images are separately obtained simultaneously.