Patents by Inventor Yasuhiro Terai
Yasuhiro Terai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8748878Abstract: The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.Type: GrantFiled: February 22, 2010Date of Patent: June 10, 2014Assignee: Sony CorporationInventors: Norihiko Yamaguchi, Satoshi Taniguchi, Hiroko Miyashita, Yasuhiro Terai
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Patent number: 8742418Abstract: A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof.Type: GrantFiled: May 7, 2013Date of Patent: June 3, 2014Assignee: Sony CorporationInventors: Narihiro Morosawa, Yasuhiro Terai, Toshiaki Arai
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Publication number: 20140124781Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.Type: ApplicationFiled: January 14, 2014Publication date: May 8, 2014Applicant: Sony CorporationInventors: Yasuhiro Terai, Eri Fukumoto, Toshiaki Arai, Narihiro Morosawa
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Publication number: 20130270566Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.Type: ApplicationFiled: June 12, 2013Publication date: October 17, 2013Inventors: Yasuhiro Terai, Eri Fukumoto, Toshiaki Arai
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Publication number: 20130240878Abstract: A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof.Type: ApplicationFiled: May 7, 2013Publication date: September 19, 2013Applicant: Sony CorporationInventors: NARIHIRO MOROSAWA, YASUHIRO TERAI, TOSHIAKI ARAI
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Patent number: 8486774Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.Type: GrantFiled: June 7, 2011Date of Patent: July 16, 2013Assignee: Sony CorporationInventors: Yasuhiro Terai, Eri Fukumoto, Toshiaki Arai
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Patent number: 8461594Abstract: Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20.Type: GrantFiled: October 7, 2009Date of Patent: June 11, 2013Assignee: Sony CorporationInventors: Narihiro Morosawa, Yasuhiro Terai, Toshiaki Arai
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Publication number: 20130087795Abstract: A display device includes: a thin film transistor; and a wiring layer; the thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode made of a light transmissive material and electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material, the second electrode being electrically connected to each of the semiconductor layer and the wiring layer, wherein a difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material.Type: ApplicationFiled: September 14, 2012Publication date: April 11, 2013Applicant: SONY CORPORATIONInventors: Yasuhiro Terai, Toshiaki Arai
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Patent number: 8389991Abstract: The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.Type: GrantFiled: November 22, 2010Date of Patent: March 5, 2013Assignee: Sony CorporationInventors: Narihiro Morosawa, Eri Fukumoto, Yasuhiro Terai
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Patent number: 8378351Abstract: A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.Type: GrantFiled: April 1, 2011Date of Patent: February 19, 2013Assignee: Sony CorporationInventors: Eri Fukumoto, Yasuhiro Terai, Narihiro Morosawa
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Publication number: 20120228623Abstract: Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode.Type: ApplicationFiled: February 3, 2012Publication date: September 13, 2012Applicant: SONY CORPORATIONInventors: Yasuhiro Terai, Toshiaki Arai
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Patent number: 8119518Abstract: A film forming method includes the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio larger than 1 and smaller than 2, the F/C ratio being defined as a ratio of a number of F atoms to a number of C atoms in a source gas molecule.Type: GrantFiled: August 17, 2010Date of Patent: February 21, 2012Assignee: Tokyo Electron LimitedInventors: Kenichi Nishizawa, Yasuhiro Terai, Akira Asano
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Publication number: 20110309876Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.Type: ApplicationFiled: June 7, 2011Publication date: December 22, 2011Applicant: SONY CORPORATIONInventors: Yasuhiro Terai, Eri Fukumoto, Toshiaki Arai
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Publication number: 20110248270Abstract: A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.Type: ApplicationFiled: April 1, 2011Publication date: October 13, 2011Applicant: SONY CORPORATIONInventors: Eri Fukumoto, Yasuhiro Terai, Narihiro Morosawa
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Publication number: 20110186853Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.Type: ApplicationFiled: January 26, 2011Publication date: August 4, 2011Applicant: SONY CORPORATIONInventors: Yasuhiro Terai, Eri Fukumoto, Toshiaki Arai, Narihiro Morosawa
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Publication number: 20110180802Abstract: Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20.Type: ApplicationFiled: October 7, 2009Publication date: July 28, 2011Applicant: SONY CORPORATIONInventors: Narihiro Morosawa, Yasuhiro Terai, Toshiaki Arai
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Publication number: 20110140116Abstract: The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.Type: ApplicationFiled: November 22, 2010Publication date: June 16, 2011Applicant: SONY CORPORATIONInventors: Narihiro Morosawa, Eri Fukumoto, Yasuhiro Terai
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Patent number: 7875549Abstract: A film forming method includes the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio larger than 1 smaller than 2, the F/C ratio being defined as a ratio of a number of F atoms to a number of C atoms in a source gas molecule.Type: GrantFiled: July 23, 2004Date of Patent: January 25, 2011Assignee: Tokyo Electron LimitedInventors: Kenichi Nishizawa, Yasuhiro Terai, Akira Asano
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Publication number: 20100317188Abstract: A film forming method includes the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio larger than 1 and smaller than 2, the F/C ratio being defined as a ratio of a number of F atoms to a number of C atoms in a source gas molecule.Type: ApplicationFiled: August 17, 2010Publication date: December 16, 2010Applicant: TOKYO ELECTON LIMITEDInventors: Kenichi Nishizawa, Yasuhiro Terai, Akira Asano
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Publication number: 20100224871Abstract: The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.Type: ApplicationFiled: February 22, 2010Publication date: September 9, 2010Applicant: SONY CORPORATIONInventors: Norihiko Yamaguchi, Satoshi Taniguchi, Hiroko Miyashita, Yasuhiro Terai