Abstract: A cap main body is provided with an approximately rectangular conical occluded portion in a leading end side, an approximately rectangular tubular cover portion in an inner side of the occluded portion, and approximately rectangular tubular right and left and upper and lower side plates in a rear end side. A pair of slits are provided at upper and lower positions of the right and left side plates or right and left positions of the upper and lower side plates from an opening end of the cap main body toward an inward occluded portion so that elastic side plates are formed in a facing manner. A locking mechanism protruding out of an opening portion in a rear end of the cap main body and capable of locking to and unlocking from a spring push of the plug main body is provided in a leading end of the elastic side plates.

Abstract: An information processing device includes a first package including a first arithmetic circuit, first cache memory and a transmitting circuit, as well as a second package including a second arithmetic circuit, second cache memory and a receiving circuit. The first arithmetic circuit is configured to provide transfer data to the first cache memory that is destined for the second cache memory. The transmitting circuit is configured to transmit to the receiving circuit an indication of a data transfer of the transfer data and to restrict use of the first cache memory for data other than the transfer data during the data transfer. The receiving circuit is configured to receive the indication of the data transfer, to acquire the transfer data stored in the first cache memory and to store the acquired transfer data in the second cache memory.

Abstract: Provided is a III-nitride semiconductor light-emitting device having excellent device lifetime as compared with conventional devices and a method of producing the same. A III-nitride semiconductor light-emitting device 100 has an n-type semiconductor layer 30, a light emitting layer 40 containing at least Al, an electron blocking layer 50, and a p-type semiconductor layer 60 in this order. The light emitting layer 40 has a quantum well structure having well layers 41 and barrier layers 42. The electron blocking layer 50 is adjacent to the light emitting layer 40 and is formed from a layer having an Al content higher than that of the barrier layers 42 and the p-type semiconductor layer 60. The electron blocking layer 50 has a Si-based doped region layer 50a.

Abstract: A force sense presentation device includes a movable body, an actuator unit, a posture detection unit, a posture detection unit, a signal generation unit, and a control unit. The actuator unit is connected to the movable body. The posture detection unit is configured to detect posture of the force sense presentation device. The signal generation unit is configured to generate a driving signal for generating vibration on the actuator unit, the vibration having within a period at least one of a plurality of different amplitudes and a plurality of different frequencies. The control unit is configured to control the generation of the driving signal by the signal generation unit depending on the detected posture.

Abstract: An image processing device (2A) comprises: an input means for inputting a brightfield image representing cell morphology in a tissue section, and a fluorescence image representing, by fluorescent bright spots, the expression of a specific protein in the same range of the tissue section; a first generation means for generating a cell image obtained by extracting a specific site of a cell from the brightfield image; a second generation means for generating an image obtained by extracting bright spot regions from the fluorescence image, creating a brightness profile for each bright spot region, and generating a fluorescent particle image obtained by extracting the fluorescent particles in the bright spot regions on the basis of the fluorescence profile for one fluorescent particle, which serves as a fluorescence bright spot source; and a calculation means for superimposing the cell image and the fluorescent particle image on one another.

Abstract: A group III nitride semiconductor light-emitting element having longer element life than conventional group III nitride semiconductor light-emitting elements and a method of manufacturing the same are provided. A group III nitride semiconductor light-emitting element 100 comprises, in the following order: an n-type group III nitride semiconductor layer 30; a group III nitride semiconductor laminated body 40 obtained by alternately laminating a barrier layer 40a and a well layer 40b narrower in bandgap than the barrier layer 40a in the stated order so that the number of barrier layers 40a and the number of well layers 40b are both N, where N is an integer; an AlN guide layer 60; and a p-type group III nitride semiconductor layer 70, wherein the AlN guide layer 60 has a thickness of 0.5 nm or more and 2.0 nm or less.

Abstract: An air conditioning device for a vehicle (1) includes: a housing (2) having an opening (2M); a blower (4) having a fan (9) accommodated within the housing and rotating about a rotation axis parallel to a first axis; a filter section (5) which is disposed between a gas inlet (7) and the opening and through which gas taken in from the gas inlet and flowing into the opening passes; and a support member (6) disposed between the blower and the filter section so as to be located at least partially at the opening, and supporting the filter section. The support member has a rib portion (61) extending in a longitudinal direction in a predetermined plane orthogonal to the first axis, and a sticking-out portion (62) sticking out from the rib portion in a transverse direction in the predetermined plane orthogonal to the longitudinal direction.

Abstract: We propose a method of producing a III nitride semiconductor light-emitting device 1 having a p-type semiconductor layer 150 in this order, wherein the p-type semiconductor layer 150 is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer 51 having an Al content higher than that of the barrier layer 42, on the light emitting layer 40; a nitrogen carrier gas supply step for supplying at least a carrier gas containing nitrogen as a main component to a surface of the electron blocking layer 51; and a second p-type contact formation step for forming a second p-type contact layer 55 made of AlyGa1-yN on the electron blocking layer 51 after the nitrogen carrier gas supply step, and wherein the second p-type contact formation step is performed using a carrier gas containing hydrogen as a main component.

Abstract: This information presentation apparatus includes: an actuator that includes a movable portion and is capable of linearly driving the movable portion; a control unit that controls the actuator so that the movable portion is driven corresponding to waveform information; and a belt for attaching the actuator to a user.

Abstract: A force sense presentation device includes a movable body, an actuator unit, a posture detection unit, a signal generation unit, and a control unit. The actuator unit is connected to the movable body. The posture detection unit is configured to detect posture of the force sense presentation device. The signal generation unit is configured to generate a driving signal for generating vibration on the actuator unit, the vibration having within a period at least one of a plurality of different amplitudes and a plurality of different frequencies. The control unit is configured to control the generation of the driving signal by the signal generation unit depending on the detected posture.

Abstract: An electric storage device is provided. The electric storage device includes a case, first and second terminals, a conduction state switch, an electronic component and a cover member including a connecting portion. The case has a first opening and a second opening on a first surface of the case and is configured to house a battery unit including a first terminal portion and a second terminal portion. The conduction state switch is provided between the first terminal portion of the battery unit and the first terminal of the case. The conduction state switch is in a conducting state when the connecting portion of the cover member is connected with the conduction state switch and the cover member is attached to the first surface of the case and covers the first opening, the second opening, the first terminal and the second terminal.

Abstract: We propose a method of producing a III nitride semiconductor light-emitting device including a p-type semiconductor layer, in which the p-type semiconductor layer is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer made of AlyGa1-yN (b<y?1) on a light emitting layer; and a p-type contact formation step for forming a p-type contact layer which is AlxGa1-xN (0?x?0.1), directly on the electron blocking layer, and in which the electron blocking layer formation step is performed using a carrier gas containing hydrogen as a main component, and the p-type contact formation step is performed using a carrier gas containing nitrogen as a main component.

Abstract: A vehicle lid device includes a housing provided with a fuel filling aperture portion; a lid opening and closing an opening of the housing; and a link member connecting the lid to the housing to be openable and closable. The vehicle lid device includes a base member capable of axially supporting the link member to be turnable, and a depressed portion provided in the housing and capable of receiving the base member.

Abstract: An information processing device includes a processor configured to execute a program; and a programmable circuit device (a PLD hereafter) having a reconfiguration region in which a logic circuit requested in a configuration request from the processor is configured in response to the configuration request. The processor obtains measured values of data transfer rates of a plurality of logic circuits that are configured in the reconfiguration region and are operating; and on the basis of a sum of the obtained measured values of the data transfer rates, adjusts respective parallelisms of the plurality of logic circuits configured in the reconfiguration region, within a range ensuring that a sum of the data transfer rates does not exceed an upper limit of a data transfer rate of a bus provided in the PLD.

Abstract: An information presentation apparatus which includes an actuator, a control unit and a belt. The actuator includes a movable portion and is capable of linearly driving a movable portion. The control unit controls the actuator so that the movable portion is driven corresponding to waveform information. The belt is to attach the actuator to a user.

Abstract: An information processing device includes a processor configured to execute a program; and a programmable circuit device (a PLD hereafter) having a reconfiguration region in which a logic circuit requested in a configuration request from the processor is configured in response to the configuration request. The processor obtains measured values of data transfer rates of a plurality of logic circuits that are configured in the reconfiguration region and are operating; and on the basis of a sum of the obtained measured values of the data transfer rates, adjusts respective parallelisms of the plurality of logic circuits configured in the reconfiguration region, within a range ensuring that a sum of the data transfer rates does not exceed an upper limit of a data transfer rate of a bus provided in the PLD.

Abstract: We propose a method of producing a III nitride semiconductor light-emitting device 1 having a p-type semiconductor layer 150 in this order, wherein the p-type semiconductor layer 150 is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer 51 having an Al content higher than that of the barrier layer 42, on the light emitting layer 40; a nitrogen carrier gas supply step for supplying at least a carrier gas containing nitrogen as a main component to a surface of the electron blocking layer 51; and a second p-type contact formation step for forming a second p-type contact layer 55 made of AlyGa1-yN on the electron blocking layer 51 after the nitrogen carrier gas supply step, and wherein the second p-type contact formation step is performed using a carrier gas containing hydrogen as a main component.

Abstract: An image processing device (2A) comprises: an input means for inputting a brightfield image representing cell morphology in a tissue section, and a fluorescence image representing, by fluorescent bright spots, the expression of a specific protein in the same range of the tissue section; a first generation means for generating a cell image obtained by extracting a specific site of a cell from the brightfield image; a second generation means for generating an image obtained by extracting bright spot regions from the fluorescence image, creating a brightness profile for each bright spot region, and generating a fluorescent particle image obtained by extracting the fluorescent particles in the bright spot regions on the basis of the fluorescence profile for one fluorescent particle, which serves as a fluorescence bright spot source; and a calculation means for superimposing the cell image and the fluorescent particle image on one another.

Abstract: A signal of fluorescence emitted from a fluorescent particle of a pathological specimen can be increased in sensitivity and be stabilized, thereby resulting in an enhancement in retrieval accuracy of information from a fluorescence image. A pathological specimen including a tissue section subjected to a treatment (immunostaining/FISH staining treatment) for fluorescence-labeling of an objective biomaterial with a fluorescent particle observable in a dark field, based on an immunostaining or FISH method; a packed layer with which the tissue section is covered; and a protection layer with which the packed layer is covered; wherein the refractive indexes of the fluorescent particle, the packed layer and the protection layer (measurement wavelength: 589 nm; measurement temperature: 20° C.; in all) satisfy the conditions of Expressions (1) and (2): |n1?n2|?0.20??Expression (1) |n2?n3|?0.

Abstract: A push-up device includes a case, a rod juts out from inside the case so as to adopt an advanced position, a rod biasing member biases the rod in a jutting out direction pushing the rod out from inside the case, a lock mechanism that includes a slide cam that moves together with the rod in the jutting out direction and a rotation cam that is relatively rotatable with respect to the slide cam about the axis of the rod, with the lock mechanism positioned between the case and the rod, and locking the rod in a retracted position in the case by the rotation cam engaging with the slide cam and rotating due to the rod being pressed in against biasing force of the rod biasing member, and a rotation cam biasing member that biases the rotation cam toward the jutting out direction.