Abstract: A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 ?m or more, and the number of micropores having an average diameter of less than 1 ?m existing in 40000 ?m2 of the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.

Abstract: A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.

Abstract: A control system 9 according to the present invention is mounted on a moving object. The control system 9 includes: an observing device 92 which transmits observation result data indicating an observation result of surroundings of the moving object; a first control instruction device 91 which transmits first control data indicating the control contents determined based on the observation result data; a movement control device 93 which controls movement of the moving object; and a relay device 95 which relays the first control data transmitted from the first control instruction device 91, to the movement control device 93. When a second control instruction device 94 which transmits second control data indicating the control contents determined based on the observation result data is provided to the control system 9, the relay device 95 transmits the second control data instead of the first control data, to the movement control device 93.

Abstract: A target is formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target are bonded. A production method of such a target is provided. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

Abstract: A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.

Abstract: A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 ?m or more, and the number of micropores having an average diameter of less than 1 ?m existing in 40000 ?m2 of the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.

Abstract: A control system 9 according to the present invention is mounted on a moving object. The control system 9 includes: an observing device 92 which transmits observation result data indicating an observation result of surroundings of the moving object; a first control instruction device 91 which transmits first control data indicating the control contents determined based on the observation result data; a movement control device 93 which controls movement of the moving object; and a relay device 95 which relays the first control data transmitted from the first control instruction device 91, to the movement control device 93. When a second control instruction device 94 which transmits second control data indicating the control contents determined based on the observation result data is provided to the control system 9, the relay device 95 transmits the second control data instead of the first control data, to the movement control device 93.

Abstract: A control system 9 according to the present invention is mounted on a moving object. The control system 9 includes: an observing device 92 which transmits observation result data indicating an observation result of surroundings of the moving object; a first control instruction device 91 which transmits first control data indicating the control contents determined based on the observation result data; a movement control device 93 which controls movement of the moving object; and a relay device 95 which relays the first control data transmitted from the first control instruction device 91, to the movement control device 93. When a second control instruction device 94 which transmits second control data indicating the control contents determined based on the observation result data is provided to the control system 9, the relay device 95 transmits the second control data instead of the first control data, to the movement control device 93.

Abstract: Provided is a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a target material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target material are bonded. Additionally provided is a production method of such a target capable of producing, with relative ease, a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride, which has poor machinability, can relatively easily produced.

Abstract: A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting the magnetic substance target connected to the aluminum plate to the backing plate while maintaining the flatness, and grinding out the aluminum plate, whereby the flatness of the magnetic substance target can be maintained until the magnetic substance target is connected to the backing plate by a relatively simple operation.

Abstract: A target is formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target are bonded. A production method of such a target is provided. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

Abstract: A control system 9 according to the present invention is mounted on a moving object. The control system 9 includes: an observing device 92 which transmits observation result data indicating an observation result of surroundings of the moving object; a first control instruction device 91 which transmits first control data indicating the control contents determined based on the observation result data; a movement control device 93 which controls movement of the moving object; and a relay device 95 which relays the first control data transmitted from the first control instruction device 91, to the movement control device 93. When a second control instruction device 94 which transmits second control data indicating the control contents determined based on the observation result data is provided to the control system 9, the relay device 95 transmits the second control data instead of the first control data, to the movement control device 93.

Abstract: Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.

Abstract: Provided are a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70?x?90, 10?y?30 unit: atomic percent), and a sintered compact sputtering target for forming a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70?x?90, 10?y?30, unit: atomic percent), and comprising a target structure configured from a W matrix and Ni particles existing therein and in which W is diffused in the Ni particles.

Abstract: Provided are a high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni—V alloy capable of effectively reducing the foregoing impurities.

Abstract: Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.

Abstract: A barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is provided. The barrier film has a thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1?. A sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is also provided. The relative magnetic permeability in the in-plane direction of the sputtered face of the target is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling and inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.

Abstract: A plated product made of a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion contains metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher.

Abstract: A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 ?m, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

Abstract: A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 ?m, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.