Abstract: Provided are a barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co, having a film thickness of 3 to 150 nm, and film thickness uniformity of 10% or less at 1?; and a sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co, wherein the relative magnetic permeability in the in-plane direction of the sputtered face is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling in inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch, and have barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.

Abstract: The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a solder bump and a substrate layer or a pad. Provided are a nickel alloy sputtering target and a nickel alloy thin film for forming a barrier layer having excellent wettability with the Pb-free Sn solder or Sn—Pb solder bump, and capable of inhibiting the diffusion of Sn being a soldering component and effectively preventing the reaction with the substrate layer upon forming a Pb-free Sn solder or Sn—Pb solder bump on a substrate such as a semiconductor wafer or electronic circuit or a substrate layer or pad of the wiring or electrode formed thereon.

Abstract: Provided are a high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni—V alloy capable of effectively reducing the foregoing impurities.

Abstract: Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 ?m, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 350 from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

Abstract: Provided is high purity nickel or nickel alloy target for Magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.

Abstract: A nickel alloy sputtering target containing 0.5 to 10 at % of tantalum in nickel, in which inevitable impurities excluding gas components are 100 wtppm or less. Provided is a nickel alloy sputtering target, and the manufacturing technology thereof, enabling the formation of a thermally stable silicide (NiSi) film, unlikely to cause the coagulation of films or excessive formation of silicides, having few generation of particles upon forming the sputtered film, having favorable uniformity and superior in the plastic workability to the target, and which is particularly effective for the manufacture of a gate electrode material (thin film).

Abstract: A sputtering target producing few particles, a backing plate or a sputtering apparatus, and a sputtering method producing few particles. An arc-spraying coating film and a plasma-spraying coating film over the former are formed on the sputtering target, a backing plate, or another surface in the sputtering apparatus, where an unwanted film might be formed. Thus a deposit is prevent from separating/flying from the target, backing plate, or another surface where an unwanted film might be formed in the sputtering apparatus.

Abstract: A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting the magnetic substance target connected to the aluminum plate to the backing plate while maintaining the flatness, and grinding out the aluminum plate, whereby the flatness of the magnetic substance target can be maintained until the magnetic substance target is connected to the backing plate by a relatively simple operation.

Abstract: Provided is high purity nickel or nickel alloy target for magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior in plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.

Abstract: A sputtering target producing few particles, a backing plate or a sputtering apparatus, and a sputtering method producing few particles. An arc-spraying coating film and a plasma-spraying coating film over the former are formed on the sputtering target, a backing plate, or another surface in the sputtering apparatus, where an unwanted film might be formed. Thus a deposit is prevent from separating/flying from the target, backing plate, or another surface where an unwanted film might be formed in the sputtering apparatus.

Abstract: The surface roughness of a sputtering target is controlled and the amount of residual contaminants, the hydrogen content, and the thickness of a surface damage layer are reduced, in order to homogenize the thickness of a film formed on a substrate by sputtering and prevent and suppress nodule production to reduce particle production during sputtering. A sputtering target with the surface roughness (Ra) not more than 1.0 .mu.m, the total amount of contaminants, metal elements with a high melting point other than the major component and alloy components and Si, Al, Co, Ni, and B, not more that 500 ppm, the hydrogen content of the surface not more than 50 ppm, and the thickness of a surface damage layer not more than 50 .mu.m is provided, which is manufactured by precision machining, preferably, with the use of a diamond turning tool.

Abstract: Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

Abstract: Silicide targets for sputtering which have an area ratio of silicon phases that appear on the sputter surface of no more than 23%, and a density of at least 99%, with a deformed layer partly removed from the surface to attain a surface roughness of from more than 0.05 .mu.m to 1 .mu.m, preferably with the number of coarse silicon phases at least 10 .mu.m in diameter that appear on the sputter surface being at most 10/mm.sup.2. The reduction of early-stage particle generation, in turn, reduces secondary particle generation, thus realizing the reduction of particle generation at both early stage and stabilized stage. A Si powder having a maximum particle diameter of no more than 20 .mu.m is mixed with a metal powder having a maximum particle diameter of no more than 60 .mu.m, in a rather Si-lower mixing ratio. A silicide powder is synthesized from the mixture and hot pressed, the sintered compact being machined and surface treated for the removal of the deformed layer.

Abstract: Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.