Abstract: A catheter inserter for inserting a balloon catheter into an insertion opening of an endoscope provided with a valve. The balloon catheter includes a balloon attached on a distal end side of a shaft and configured to be expanded by an expansion fluid supplied from a proximal end side of the shaft, and an elastic band wound around an outer periphery of an intermediate portion of the balloon and configured to limit expansion of the balloon at the intermediate portion. The catheter inserter includes, on a distal end side thereof, a restrained member support structure configured to support a portion of an outer periphery of the elastic band. A proximal end support portion supporting a proximal end portion of the elastic band from a proximal end side is provided at a proximal end portion of the restrained member support structure.

Abstract: Paper physical property detecting device includes a first detector that measures a sheet of paper (hereinafter, merely referred to as a paper) made to stop temporarily on a conveyance path and acquires a first value corresponding to a first physical property, a second detector that measures a paper while conveying the paper on the conveyance path and acquires a second value corresponding to a second physical property with regard to a physical property different from the first physical property; and a corrector that corrects the first value on a basis of the second value and creates post correction data.

Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: A thermal print head includes a heat-generating substrate, a resistor layer, a conductive layer, a first substrate, a second substrate, and a third substrate. The heat-generating substrate includes a heat-generating substrate obverse face and a heat-generating substrate reverse face that are spaced apart from each other in a thickness direction. The resistor layer is supported by the heat-generating substrate. The conductive layer is supported by the heat-generating substrate, and electrically connected to the resistor layer. The first substrate is located upstream of the heat-generating substrate in a sub-scanning direction. The second substrate is located upstream of the first substrate in the sub-scanning direction. The third substrate is bonded to the first substrate and the second substrate and higher in flexibility than the first substrate.

Abstract: A thermal print head includes a heat-generating substrate, a resistor layer, a conductive layer, a first substrate, a second substrate, and a third substrate. The heat-generating substrate includes a heat-generating substrate obverse face and a heat-generating substrate reverse face that are spaced apart from each other in a thickness direction. The resistor layer is supported by the heat-generating substrate. The conductive layer is supported by the heat-generating substrate, and electrically connected to the resistor layer. The first substrate is located upstream of the heat-generating substrate in a sub-scanning direction. The second substrate is located upstream of the first substrate in the sub-scanning direction. The third substrate is bonded to the first substrate and the second substrate and higher in flexibility than the first substrate.

Abstract: A thermal printhead includes a substrate, a resistor layer with heat generation portions supported by the substrate and aligned in a primary scanning direction, a wiring layer supported by the substrate to form a conductive path to the heat generation portions, an insulating layer interposed between the substrate and the resistor layer, and a reflection layer located opposite to the heat generation portions with respect to the insulating layer. The reflection layer overlaps with the heat generation portions as viewed in a thickness direction of the heat generation portions and has a greater heat reflectivity than the insulating layer.

Abstract: A thermal printhead includes a substrate, a resistor layer with heat generation portions supported by the substrate and aligned in a primary scanning direction, a wiring layer supported by the substrate to form a conductive path to the heat generation portions, an insulating layer interposed between the substrate and the resistor layer, and a reflection layer located opposite to the heat generation portions with respect to the insulating layer. The reflection layer overlaps with the heat generation portions as viewed in a thickness direction of the heat generation portions and has a greater heat reflectivity than the insulating layer.

Abstract: Provided is a power generation device having a dielectric body and an electret, where power is generated by varying the distance between the dielectric body and the electret. A first electrode is connected to the electret on a side not facing the dielectric body. The first electrode is connected to a grounding terminal via a load. A second electrode may be connected to the dielectric body on a side not facing the electret. The second electrode may be directly connected to the grounding terminal.

Abstract: There is a need to provide a semiconductor device and an electronic device capable of easily allowing a bypass capacitor to always improve noise suppression on a signal path in order to transmit a reference potential between chips in different power supply noise states. There is provided a specified signal path that connects a control chip and a memory chip mounted on a mounting substrate and transmits a reference potential generated from the control chip. A bypass capacitor is connected to the specified signal path only at a connecting part where a distance from a reference potential pad of the memory chip to the connecting part along the specified signal path is shorter than a distance from a reference potential pad of the control chip to the connecting part along the specified signal path.

Abstract: A power generation apparatus includes a dielectric, a movable member being opposed to the dielectric with a predetermined distance, and an electret and an opposing electrode that are formed on the surface of the movable member facing the dielectric so as to generate a fringe electric field penetrating the dielectric between the two electrodes. When the volume occupancy of the dielectric between the electret and the opposing electrode varies in accordance with a displacement of the movable member, the power generation apparatus outputs the electric charge induced in the opposing electrode as electric current.

Abstract: There is a need to alleviate or reduce crosstalk between bonding wires or wires in a device substrate. One selection configuration divides a multiplexed terminal group into three groups according to functions differently from another selection configuration that divides the multiplexed terminal group into two groups. A first multi-pin semiconductor device is configured such that the groups are successively arranged along one edge of the chip. The first semiconductor device connects with a second semiconductor device via a multiplexed terminal group. The multiplexed terminal group includes first through third interface terminal groups that differ from each other in signal input/output configurations.

Abstract: There is a need to alleviate or reduce crosstalk between bonding wires or wires in a device substrate. One selection configuration divides a multiplexed terminal group into three groups according to functions differently from another selection configuration that divides the multiplexed terminal group into two groups. A first multi-pin semiconductor device is configured such that the groups are successively arranged along one edge of the chip. The first semiconductor device connects with a second semiconductor device via a multiplexed terminal group. The multiplexed terminal group includes first through third interface terminal groups that differ from each other in signal input/output configurations.

Abstract: There is a need to alleviate or reduce crosstalk between bonding wires or wires in a device substrate. One selection configuration divides a multiplexed terminal group into three groups according to functions differently from another selection configuration that divides the multiplexed terminal group into two groups. A first multi-pin semiconductor device is configured such that the groups are successively arranged along one edge of the chip. The first semiconductor device connects with a second semiconductor device via a multiplexed terminal group. The multiplexed terminal group includes first through third interface terminal groups that differ from each other in signal input/output configurations.

Abstract: A wireless communication device includes an electric power generation unit, an electric power accumulation unit, a sensor supplied with the electric power from the electric power accumulation unit, and a wireless communication unit supplied with the electric power from the electric power accumulation unit, for transmitting the sensed information outputted by the sensor to outside of the wireless communication device. A storage unit stores the sensed information outputted by the sensor. A control unit controls operation of the wireless communication unit, the sensor and/or the storage unit in accordance, at least in part, with the electric power accumulated in the electric power accumulation.

Abstract: A power generation apparatus includes a dielectric, a movable member being opposed to the dielectric with a predetermined distance, and an electret and an opposing electrode that are formed on the surface of the movable member facing the dielectric so as to generate a fringe electric field penetrating the dielectric between the two electrodes. When the volume occupancy of the dielectric between the electret and the opposing electrode varies in accordance with a displacement of the movable member, the power generation apparatus outputs the electric charge induced in the opposing electrode as electric current.

Abstract: A power generation apparatus includes a dielectric, a movable member being opposed to the dielectric with a predetermined distance, and an electret and an opposing electrode that are formed on the surface of the movable member facing the dielectric so as to generate a fringe electric field penetrating the dielectric between the two electrodes. When the volume occupancy of the dielectric between the electret and the opposing electrode varies in accordance with a displacement of the movable member, the power generation apparatus outputs the electric charge induced in the opposing electrode as electric current.

Abstract: There is a need to alleviate or reduce crosstalk between bonding wires or wires in a device substrate. One selection configuration divides a multiplexed terminal group into three groups according to functions differently from another selection configuration that divides the multiplexed terminal group into two groups. A first multi-pin semiconductor device is configured such that the groups are successively arranged along one edge of the chip. The first semiconductor device connects with a second semiconductor device via a multiplexed terminal group. The multiplexed terminal group includes first through third interface terminal groups that differ from each other in signal input/output configurations.

Abstract: A thermal printer head that is highly efficient to manufacture is provided, which includes: a first substrate (11), including a first main surface (110), a first inclined surface (111) that is inclined relative to the first main surface (110), and a second inclined surface (112) that is inclined relative to the first main surface (110); an electrode layer (3), laminated on the first main surface (110), the first inclined surface (111), and the second inclined surface (112); a resistor layer (4), having a plurality of heat dissipation portions (41) respectively laminated on the first inclined surface (111) and crossing separated parts in the electrode layer (3); a driving integrated circuit (IC), for controlling the current passing through each heat dissipation portion (41); and a plurality of wires (81), respectively joined to the driving IC and joined to the second inclined surface (112) through the electrode layer (3).

Abstract: Vibration electric power generation is carried out by a relative parallel movement of a ferroelectric member including floating electrodes arranged in parallel and a movable member including electrets maintaining a surface electric potential of approximately 100 volts at a temperature of 100° C. and opposed electrode portions alternately arranged, the ferroelectric member and the movable member being provided in a tire.

Abstract: Vibration electric power generation is carried out by a relative parallel movement of a ferroelectric member including floating electrodes arranged in parallel and a movable member including electrets maintaining a surface electric potential of approximately 100 volts at a temperature of 100° C. and opposed electrode portions alternately arranged, the ferroelectric member and the movable member being provided in a tire.