Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, and a light-transmissive layer located on or near the photoluminescent layer. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The submicron structure includes at least projections or recesses. The submicron structure has spatial frequency components distributed at least from more than 0 to 2/Dint(min) as determined by two-dimensional Fourier transform of a pattern of the projections or recesses and satisfies the following relationship: 0.8Dint(min)<?a/nwav-a where Dint(min) is the minimum center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses. The photoluminescent layer emits light including first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface. The light-emitting device includes second projections on at least one of the photoluminescent layer and the light-transmissive layer, and the distance between adjacent second projections is smaller than Dint.

Abstract: A light-emitting device includes a photoluminescent layer emitting light in response to excitation light, a light-transmissive layer located on the photoluminescent layer, and a light guide guiding the excitation light to the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting apparatus includes a light-emitting device and an excitation light source. The light-emitting device includes a photoluminescent layer, a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface. The excitation light source emits excitation light. The light-emitting device is integrally provided with the excitation light source.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer located on the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface. The first light has a wavelength ?a in air. A distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure including at least two periodic structures. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air and second light having a wavelength ?b in air. The at least two periodic structures include a first periodic structure having a first period pa that satisfies ?a/nwav-a<pa<?a and a second periodic structure having a second period pb that satisfies ?b/nwav-b<pb<?b, where nwav-a and nwav-b denote refractive indices of the photoluminescent layer for the first light and the second light, respectively.

Abstract: A light-emitting device according to an embodiment includes a photoluminescent layer, a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers a surface of the photoluminescent layer, and a light-transmissive layer that is located on the planarization layer and comprises a submicron structure. The submicron structure has projections or recesses. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. A distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from a light emitting surface perpendicular to the thickness direction.

Abstract: A light-emitting device includes a photoluminescent layer, a light-transmissive layer located on the photoluminescent layer, and a multilayer mirror layered together with the photoluminescent layer and the light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure. The submicron structure has at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The photoluminescent layer emits light including first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: An illuminator includes: a light-emitting element and a light-extraction layer which transmits light occurring from the light-emitting element. The light-emitting element includes a first electrode layer on the light-extraction layer side, the first electrode layer having a light transmitting property; a second electrode layer on the opposite side from the light-extraction layer; an emission layer between the first and the second electrode layers; and a feed portion disposed close to the first electrode layer, the second electrode layer, and the emission layer to apply a voltage between the first electrode layer and the second electrode layer. The light-extraction layer has a structure in which a low-refractive index layer having a relatively low refractive index and a high-refractive index layer having a higher refractive index than does the low-refractive index layer are stacked, an interface between the low-refractive index layer and the high-refractive index layer representing bump-dent features.

Abstract: This organic electroluminescent element includes: a light transmissive substrate; a light emitting stack including a first electrode, a light emitting layer, and a second electrode; and at least one light-outcoupling structure which has an uneven structure. The light emitting layer has a birefringence property with a higher refractive index in a direction parallel to a surface of the light transmissive substrate than a refractive index in a direction perpendicular to the surface of the light transmissive substrate. The uneven structure includes a plurality of protrusions which are individually allocated to some of planar matrix-like sections, and with regard to unit regions consisting of same number of sections of the planar matrix-like sections, a ratio of an area of one or more of the plurality of protrusions in a unit region is substantially constant in each unit region.

Abstract: An organic EL device includes: a reflective electrode; a transparent electrode opposite the reflective electrode; an organic layer including a light-emitting layer between the reflective electrode and transparent electrode; and a low refractive index layer between the reflective electrode and light-emitting layer. The low refractive index layer has a function of transporting/injecting electrons/holes, and has a lower refractive index than the light-emitting layer. Distance between the surface of the reflective electrode and a central light-emitting position of the light-emitting layer is 300 nm or less. Furthermore, ?n×d/???0.009 and ?n×d/???0.

Abstract: A display apparatus includes an excitation light source that outputs excitation light; a light-emitting device including a photoluminescent layer that receives the excitation light and emits light including first light having a wavelength ?a in air, and a light-transmissive layer located on or near the photoluminescent layer; and an optical shutter on an optical path of the light emitted from the photoluminescent layer. A surface structure is defined on at least one of the photoluminescent layer and the light-transmissive layer, and the surface structure has projections or recesses or both and limits a directional angle of the first light having the wavelength ?a in air.

Abstract: a light-emitting device including: a photoluminescent layer that contains a photoluminescent material and emits light including first light having a wavelength ?a in air; and a light-transmissive layer located on or near the photoluminescent layer. At least one periodic structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The at least one periodic structure has projections or recesses or both. A distance Dint between two adjacent projections or two adjacent recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A wavelength A of a peak intensity in a spectrum of light output from the at least one periodic structure in a direction perpendicular to the photoluminescent layer is different from a wavelength B of a peak intensity in an emission spectrum of the photoluminescent material.

Abstract: A light-emitting apparatus includes; a light-emitting device including a photoluminescent layer that receives excitation light and emits light including first light having a wavelength ?a in air, and a light-transmissive layer located on or near the photoluminescent layer; and an optical fiber that receives the light from the photoluminescent layer at one end of the optical fiber and emits the received light from the other end thereof. A surface structure is defined on at least one of the photoluminescent layer and the light-transmissive layer, and the surface structure has projections or recesses or both and limits a directional angle of the first light having the wavelength ?a in air.

Abstract: The present disclosure relates to an organic electroluminescence element including: a substrate having a light transmissive property; a light diffusion layer; a light transmissive electrode; a light reflective electrode; and a light emitting layer. With regard to the first light emitting layer being the first closest light emitting layer to the light reflective electrode, the relation defined by following expression (2) is satisfied, ? [ FORMULA ? ? 1 ] ? ? ( ? m ) × ? m 4 ? ? + l + 0.1 2 ? ? m ? n m ? ( ? m ) × d m ? ? ? ( ? m ) × ? m 4 ? ? + l + 0.5 2 ? ? m ( 2 ) wherein, ?m represents the weighted average emission wavelength, Ø(?m) represents the phase shift, nm(?m) represents the average refractive index of a medium filling a space between the light reflective electrode and the first light emitting layer, and dm represents the distance from the light reflective electrode to the first light emitting layer.

Abstract: An illuminator includes a light-emitting element and a light extraction sheet which transmits light occurring from the light-emitting element. The light-emitting element includes a first electrode having a light transmitting property, a second electrode, and an emission layer between the first and second electrodes. The light extraction sheet includes a light-transmitting substrate having a first face and a second face, a first light extraction structure on the first face side of the light-transmitting substrate, and a second light extraction structure on the second face side of the light-transmitting substrate. The first light extraction structure includes a low-refractive index layer and a high-refractive index layer having a higher refractive index than the low-refractive index layer. The second light extraction structure is arranged so that light which is transmitted through the light-transmitting substrate and arrives at an incident angle of 60 to 80 degrees has an average transmittance of 20% or more.

Abstract: An illuminator includes a light-emitting element and a light extraction sheet which transmits light occurring from the light-emitting element. The light-emitting element includes a first electrode having a light transmitting property, a second electrode, and an emission layer between the first and second electrodes. The light extraction sheet includes a light-transmitting substrate having a first principal face and a second principal face, a first light extraction structure on the first principal face side of the light-transmitting substrate, and a second light extraction structure on the second principal face side of the light-transmitting substrate. The first light extraction structure includes a low-refractive index layer and a high-refractive index layer. The second light extraction structure is arranged so that light which is transmitted through the light-transmitting substrate and arrives at an incident angle of 40 degrees to 60 degrees has an average transmittance of 42% or more.

Abstract: The present disclosure relates to an organic electroluminescence element including: a substrate having a light transmissive property; a light diffusion layer; a light transmissive electrode; a light reflective electrode; and a light emitting layer. With regard to the first light emitting layer being the first closest light emitting layer to the light reflective electrode, the relation defined by following expression (2) is satisfied, ? [ FORMULA ? ? 1 ] ? ? ( ? m ) × ? m 4 ? ? + l + 0.1 2 ? ? m ? n m ? ( ? m ) × d m ? ? ? ( ? m ) × ? m 4 ? ? + l + 0.5 2 ? ? m ( 2 ) wherein, ?m represents the weighted average emission wavelength, Ø(?m) represents the phase shift, nm(?m) represents the average refractive index of a medium filling a space between the light reflective electrode and the first light emitting layer, and dm represents the distance from the light reflective electrode to the first light emitting layer.

Abstract: A light-emitting device includes: a light-emitting element including a transparent electrode, a reflecting electrode, and an organic layer that includes a light-emitting layer; a transparent multilayer body including a low-refractive-index layer and a high-refractive-index layer, the high-refractive-index layer being provided in contact with the transparent electrode; a first uneven structure at an interface between the low-refractive-index layer and the high-refractive-index layer, the first uneven structure including depressions and projections, a height of each of the projections relative to the depressions being 400 nm or more; and a second uneven structure at an interface between the reflecting electrode and the organic layer, the second uneven structure including depressions and projections, a height of each of the projections relative to the depressions in the second uneven structure being 20 nm or more and 100 nm or less.

Abstract: An optical sheet includes a light scattering layer that scatters at least a part of light incident thereon by diffraction and that includes first and second areas. Each first area is a projection. Each second area is a recess. Each of at least the projections or the recesses has a tapered shape. When a center wavelength of the light incident on the light scattering layer is ? and a refractive index of a layer that is in contact with the light scattering layer at a light emission side is n, spatial frequency components of a pattern formed by the first and second areas have a maximum peak at a spatial frequency in a range of 0.068/(?×n) or more and 2.8/(?×n) or less.