LIGHT-EMITTING DEVICE INCLUDING PHOTOLUMINESCENT LAYER

Abstract

A light-emitting device according to an embodiment includes a photoluminescent layer, a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers a surface of the photoluminescent layer, and a light-transmissive layer that is located on the planarization layer and comprises a submicron structure. The submicron structure has projections or recesses. Light emitted from the photoluminescent layer includes first light having a wavelength λa in air. A distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy λa/nwav-a<Dint<λa. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from a light emitting surface perpendicular to the thickness direction.

Description

BACKGROUND

1. Technical Field

The present disclosure relates to a light-emitting device including a photoluminescent layer.

2. Description of the Related Art

Optical devices, such as lighting fixtures, displays, and projectors, that output light in the necessary direction are required for many applications. Photoluminescent materials, such as those used for fluorescent lamps and white light-emitting diodes (LEDs), emit light in all directions. Thus, those materials are used in combination with optical elements such as reflectors and lenses to output light only in a particular direction. For example, Japanese Unexamined Patent Application Publication No. 2010-231941 discloses an illumination system including a light distributor and an auxiliary reflector to provide sufficient directionality.

SUMMARY

In one general aspect, the techniques disclosed here feature a light-emitting device that includes a photoluminescent layer, a light-transmissive planarization layer, and a light-transmissive layer. The photoluminescent layer has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface. The light-transmissive planarization layer is in contact with the photoluminescent layer and covers the first surface of the photoluminescent layer. The light-transmissive layer is located on the planarization layer and comprises a submicron structure. The submicron structure has projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface. The first light has a wavelength λ_a in air. A distance D_int between adjacent projections or recesses and a refractive index n_wav-a of the photoluminescent layer for the first light satisfy λ_a/n_wav-a<D_int<λ_a. A thickness of the photoluminescent layer, the refractive index n_wav-a, and the distance D_int are set to limit a directional angle of the first light emitted from the light emitting surface.

It should be noted that general or specific embodiments may be implemented as a device, an apparatus, a system, a method, or any elective combination thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a perspective view of the structure of a light-emitting device according to an embodiment;

FIG. 1B is a fragmentary cross-sectional view of the light-emitting device illustrated in FIG. 1A;

FIG. 1C is a perspective view of the structure of a light-emitting device according to another embodiment;

FIG. 1D is a fragmentary cross-sectional view of the light-emitting device illustrated in FIG. 1C;

FIG. 2 is a graph showing the calculation results of the enhancement of light output in the front direction with varying emission wavelengths and varying a period of a periodic structure;

FIG. 3 is a graph illustrating the conditions for m=1 and m=3 in the inequality (10);

FIG. 4 is a graph showing the calculation results of the enhancement of light output in the front direction with varying emission wavelengths and varying thicknesses t of a photoluminescent layer;

FIG. 5A is a graph showing the calculation results of the electric field distribution of a mode to guide light in the x direction for a thickness t of 238 nm;

FIG. 5B is a graph showing the calculation results of the electric field distribution of a mode to guide light in the x direction for a thickness t of 539 nm;

FIG. 5C is a graph showing the calculation results of the electric field distribution of a mode to guide light in the x direction for a thickness t of 300 nm;

FIG. 6 is a graph showing the calculation results of the enhancement of light performed under the same conditions as in FIG. 2 except that the polarization of the light was assumed to be the TE mode, which has an electric field component perpendicular to the y direction;

FIG. 7A is a plan view of a two-dimensional periodic structure;

FIG. 7B is a graph showing the results of calculations performed as in FIG. 2 for the two-dimensional periodic structure;

FIG. 8 is a graph showing the calculation results of the enhancement of light output in the front direction with varying emission wavelengths and varying refractive indices of the periodic structure;

FIG. 9 is a graph showing the results obtained under the same conditions as in FIG. 8 except that the photoluminescent layer was assumed to have a thickness of 1,000 nm;

FIG. 10 is a graph showing the calculation results of the enhancement of light output in the front direction with varying emission wavelengths and varying heights of the periodic structure;

FIG. 11 is a graph showing the results of calculations performed under the same conditions as in FIG. 10 except that the periodic structure was assumed to have a Refractive index n_p of 2.0;

FIG. 12 is a graph showing the results of calculations performed under the same conditions as in FIG. 9 except that the polarization of the light was assumed to be the TE mode, which has an electric field component perpendicular to the y direction;

FIG. 13 is a graph showing the results of calculations performed under the same conditions as in FIG. 9 except that the photoluminescent layer was assumed to have a refractive index n_wav of 1.5;

FIG. 14 is a graph showing the results of calculations performed under the same conditions as in FIG. 2 except that the photoluminescent layer and the periodic structure were assumed to be located on a transparent substrate having a refractive index of 1.5;

FIG. 15 is a graph illustrating the condition represented by the inequality (15);

FIG. 16 is a schematic view of a light-emitting apparatus including a light-emitting device illustrated in FIGS. 1A and 1B and a light source that directs excitation light into a photoluminescent layer;

FIGS. 17A to 17D illustrate structures in which excitation light is coupled into a quasi-guided mode to efficiently output light: FIG. 17A illustrates a one-dimensional periodic structure having a period p_x in the x direction, FIG. 17B illustrates a two-dimensional periodic structure having a period p_x in the x direction and a period p_y in the y direction, FIG. 17C illustrates the wavelength dependence of light absorptivity in the structure in FIG. 17A, and FIG. 17D illustrates the wavelength dependence of light absorptivity in the structure in FIG. 17B;

FIG. 18A is a schematic view of a two-dimensional periodic structure;

FIG. 18B is a schematic view of another two-dimensional periodic structure;

FIG. 19A is a schematic view of a modified example in which a periodic structure is formed on a transparent substrate;

FIG. 19B is a schematic view of another modified example in which a periodic structure is formed on a transparent substrate;

FIG. 19C is a graph showing the calculation results of the enhancement of light output from the structure illustrated in FIG. 19A in the front direction with varying emission wavelengths and varying periods of the periodic structure;

FIG. 20 is a schematic view of a mixture of light-emitting devices in powder form;

FIG. 21 is a plan view of a two-dimensional array of periodic structures having different periods on the photoluminescent layer;

FIG. 22 is a schematic view of a light-emitting device including photoluminescent layers each having a textured surface;

FIG. 23 is a cross-sectional view of a structure including a protective layer between a photoluminescent layer and a periodic structure;

FIG. 24 is a cross-sectional view of a structure including a periodic structure formed by processing only a portion of a photoluminescent layer;

FIG. 25 is a cross-sectional transmission electron microscopy (TEM) image of a photoluminescent layer formed on a glass substrate having a periodic structure;

FIG. 26 is a graph showing the results of measurements of the spectrum of light output from a sample light-emitting device in the front direction;

FIG. 27A is a schematic view of a light-emitting device that can emit linearly polarized light of the TM mode, rotated about an axis parallel to the line direction of the one-dimensional periodic structure;

FIG. 27B is a graph showing the results of measurements of the angular dependence of light output from the sample light-emitting device rotated as illustrated in FIG. 27A;

FIG. 27C is a graph showing the results of calculations of the angular dependence of light output from the sample light-emitting device rotated as illustrated in FIG. 27A;

FIG. 27D is a schematic view of a light-emitting device that can emit linearly polarized light of the TE mode, rotated about an axis parallel to the line direction of the one-dimensional periodic structure;

FIG. 27E is a graph showing the results of measurements of the angular dependence of light output from the sample light-emitting device rotated as illustrated in FIG. 27D;

FIG. 27F is a graph showing the results of calculations of the angular dependence of light output from the sample light-emitting device rotated as illustrated in FIG. 27D;

FIG. 28A is a schematic view of a light-emitting device that can emit linearly polarized light of the TE mode, rotated about an axis perpendicular to the line direction of the one-dimensional periodic structure;

FIG. 28B is a graph showing the results of measurements of the angular dependence of light output from the sample light-emitting device rotated as illustrated in FIG. 28A;

FIG. 28C is a graph showing the results of calculations of the angular dependence of light output from the sample light-emitting device rotated as illustrated in FIG. 28A;

FIG. 28D is a schematic view of a light-emitting device that can emit linearly polarized light of the TM mode, rotated about an axis perpendicular to the line direction of the one-dimensional periodic structure;

FIG. 28E is a graph showing the results of measurements of the angular dependence of light output from the sample light-emitting device rotated as illustrated in FIG. 28D;

FIG. 28F is a graph showing the results of calculations of the angular dependence of light output from the sample light-emitting device rotated as illustrated in FIG. 28D;

FIG. 29 is a graph showing the results of measurements of the angular dependence of light (wavelength: 610 nm) output from the sample light-emitting device;

FIG. 30 is a schematic perspective view of a slab waveguide;

FIGS. 31A and 31B are atomic force microscope images of a surface of a photoluminescent layer, FIG. 31A is a perspective view, and FIG. 31B is a plan view;

FIGS. 32A to 32G are cross-sectional views of a structure including a planarization layer between a photoluminescent layer and a periodic structure, and FIGS. 32A to 32G illustrate different embodiments;

FIGS. 33A to 33G are cross-sectional views of a structure including a planarization layer between a photoluminescent layer and a periodic structure, and FIGS. 33A to 33G illustrate different embodiments; and

FIGS. 34A to 34F are cross-sectional views of a production process of a light-emitting device having the structure illustrated in FIG. 33G, and FIGS. 34A to 34F illustrate different processes.

DETAILED DESCRIPTION

The present disclosure includes the following light-emitting devices and light-emitting apparatuses:

[Item 1] A light-emitting device including

a photoluminescent layer,

a light-transmissive layer located on or near the photoluminescent layer, and

a submicron structure that is formed on at least one of the photoluminescent layer and the light-transmissive layer and that extends in a plane of the photoluminescent layer or the light-transmissive layer,

wherein the submicron structure has projections or recesses,

light emitted from the photoluminescent layer includes first light having a wavelength λ_a in air, and

a distance D_int between adjacent projections or recesses and a refractive index n_wav-a of the photoluminescent layer for the first light satisfy λ_a/n_wav-a<D_int<λ_a.

[Item 2] The light-emitting device according to Item 1, wherein the submicron structure includes at least one periodic structure comprising the projections or recesses, and the at least one periodic structure includes a first periodic structure having a period p_a that satisfies λ_a/n_wav-a<p_a<λ_a.
[Item 3] The light-emitting device according to Item 1 or 2, wherein the refractive index n_t-a of the light-transmissive layer for the first light is lower than the refractive index n_wav-a of the photoluminescent layer for the first light.
[Item 4] The light-emitting device according to any one of Items 1 to 3, wherein the first light has the maximum intensity in a first direction determined in advance by the submicron structure.
[Item 5] The light-emitting device according to Item 4, wherein the first direction is normal to the photoluminescent layer.
[Item 6] The light-emitting device according to Item 4 or 5, wherein the first light emitted in the first direction is linearly polarized light.
[Item 7] The light-emitting device according to any one of Items 4 to 6, wherein the directional angle of the first light with respect to the first direction is less than 15 degrees.
[Item 8] The light-emitting device according to any one of Items 4 to 7, wherein second light having a wavelength λ_b different from the wavelength λ_a of the first light has the maximum intensity in a second direction different from the first direction.
[Item 9] The light-emitting device according to any one of Items 1 to 8, wherein the light-transmissive layer has the submicron structure.
[Item 10] The light-emitting device according to any one of Items 1 to 9, wherein the photoluminescent layer has the submicron structure.
[Item 11] The light-emitting device according to any one of Items 1 to 8, wherein

the photoluminescent layer has a flat main surface, and

the light-transmissive layer is located on the flat main surface of the photoluminescent layer and has the submicron structure.

[Item 12] The light-emitting device according to Item 11, wherein the photoluminescent layer is supported by a transparent substrate.
[Item 13] The light-emitting device according to any one of Items 1 to 8, wherein

the light-transmissive layer is a transparent substrate having the submicron structure on a main surface thereof, and

the photoluminescent layer is located on the submicron structure.

[Item 14] The light-emitting device according to Item 1 or 2, wherein the refractive index n_t-a of the light-transmissive layer for the first light is higher than or equal to the refractive index n_wav-a of the photoluminescent layer for the first light, and each of the projections or recesses in the submicron structure has a height or depth of 150 nm or less.
[Item 15] The light-emitting device according to any one of Items 1 and 3 to 14, wherein

the submicron structure includes at least one periodic structure comprising the projections or recesses, and the at least one periodic structure includes a first periodic structure having a period p_a that satisfies λ_a/n_wav-a<p_a<λ_a, and

the first periodic structure is a one-dimensional periodic structure.

[Item 16] The light-emitting device according to Item 15, wherein

light emitted from the photoluminescent layer includes second light having a wavelength λ_b different from the wavelength λ_a in air,

the at least one periodic structure further includes a second periodic structure having a period p_b that satisfies λ_b/n_wav-b<p_b<λ_b, wherein n_wav-b denotes a refractive index of the photoluminescent layer for the second light, and the second periodic structure is a one-dimensional periodic structure.

[Item 17] The light-emitting device according to any one of Items 1 and 3 to 14, wherein the submicron structure includes at least two periodic structures comprising the projections or recesses, and the at least two periodic structures include a two-dimensional periodic structure having periodicity in different directions.
[Item 18] The light-emitting device according to any one of Items 1 and 3 to 14, wherein

the submicron structure includes periodic structures comprising the projections or recesses, and

the periodic structures include periodic structures arranged in a matrix.

[Item 19] The light-emitting device according to any one of Items 1 and 3 to 14, wherein

the submicron structure includes periodic structures comprising the projections or recesses, and

the periodic structures include a periodic structure having a period p_ex that satisfies λ_ex/n_wav-ex<p_ex<λ_ex, wherein λ_ex denotes the wavelength of excitation light in air for a photoluminescent material contained in the photoluminescent layer, and n_wav-ex denotes the refractive index of the photoluminescent layer for the excitation light.

[Item 20] A light-emitting device including

photoluminescent layers and light-transmissive layers,

wherein at least two of the photoluminescent layers are independently the photoluminescent layer according to any one of Items 1 to 19, and at least two of the light-transmissive layers are independently the light-transmissive layer according to any one of Items 1 to 19.

[Item 21] The light-emitting device according to Item 20, wherein the photoluminescent layers and the light-transmissive layers are stacked on top of each other.
[Item 22] A light-emitting device including

a photoluminescent layer,

a light-transmissive layer located on or near the photoluminescent layer, and

a submicron structure that is formed on at least one of the photoluminescent layer and the light-transmissive layer and that extends in a plane of the photoluminescent layer or the light-transmissive layer,

wherein light for forming a quasi-guided mode in the photoluminescent layer and the light-transmissive layer is emitted.

[Item 23] A light-emitting device including

a waveguide layer capable of guiding light, and

a periodic structure located on or near the waveguide layer,

wherein the waveguide layer contains a photoluminescent material, and

the waveguide layer includes a quasi-guided mode in which light emitted from the photoluminescent material is guided while interacting with the periodic structure.

[Item 24] A light-emitting device including

a photoluminescent layer,

a light-transmissive layer located on or near the photoluminescent layer, and

a submicron structure that is formed on at least one of the photoluminescent layer and the light-transmissive layer and that extends in a plane of the photoluminescent layer or the light-transmissive layer,

wherein the submicron structure has projections or recesses, and

a distance D_int between adjacent projections or recesses, the wavelength λ_ex of excitation light in air for a photoluminescent material contained in the photoluminescent layer, and a refractive index n_wav-ex of a medium having the highest refractive index for the excitation light out of media present in an optical path to the photoluminescent layer or the light-transmissive layer satisfy λ_ex/n_wav-ex<D_int<λ_ex.

[Item 25] The light-emitting device according to Item 24, wherein the submicron structure includes at least one periodic structure comprising the projections or recesses, and the at least one periodic structure includes a first periodic structure having a period p_ex that satisfies λ_ex/n_wav-ex<p_ex<λ_ex.
[Item 26] A light-emitting device including

a light-transmissive layer,

a submicron structure that is formed in the light-transmissive layer and extends in a plane of the light-transmissive layer, and

a photoluminescent layer located on or near the submicron structure,

wherein the submicron structure has projections or recesses,

light emitted from the photoluminescent layer includes first light having a wavelength λ_a in air,

the submicron structure includes at least one periodic structure comprising the projections or recesses, and

a refractive index n_wav-a of the photoluminescent layer for the first light and a period p_a of the at least one periodic structure satisfy λ_a/n_wav-a<p_a<λ_a.

[Item 27] A light-emitting device including

a photoluminescent layer,

a light-transmissive layer having a higher refractive index than the photoluminescent layer, and

a submicron structure that is formed in the light-transmissive layer and extends in a plane of the light-transmissive layer,

wherein the submicron structure has projections or recesses,

light emitted from the photoluminescent layer includes first light having a wavelength λ_a in air,

the submicron structure includes at least one periodic structure comprising the projections or recesses, and

a refractive index n_wav-a of the photoluminescent layer for the first light and a period p_a of the at least one periodic structure satisfy λ_a/n_wav-a<p_a<λ_a.

[Item 28] A light-emitting device including

a photoluminescent layer, and

a submicron structure that is formed in the photoluminescent layer and extends in a plane of the photoluminescent layer,

wherein the submicron structure has projections or recesses,

light emitted from the photoluminescent layer includes first light having a wavelength λ_a in air,

the submicron structure includes at least one periodic structure comprising the projections or recesses, and

a refractive index n_wav-a of the photoluminescent layer for the first light and a period p_a of the at least one periodic structure satisfy λ_a/n_wav-a<p_a<λ_a.

[Item 29] The light-emitting device according to any one of Items 1 to 21 and 24 to 28, wherein the submicron structure has both the projections and the recesses.
[Item 30] The light-emitting device according to any one of Items 1 to 22 and 24 to 27, wherein the photoluminescent layer is in contact with the light-transmissive layer.
[Item 31] The light-emitting device according to Item 23, wherein the waveguide layer is in contact with the periodic structure.
[Item 32] A light-emitting apparatus including

the light-emitting device according to any one of Items 1 to 31, and

an excitation light source for irradiating the photoluminescent layer with excitation light.

[Item 33] A light-emitting device including:

a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface;

a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers the first surface of the photoluminescent layer; and

a light-transmissive layer that is located on the planarization layer and comprises a submicron structure,

wherein the submicron structure has projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer,

at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,

the first light has a wavelength λ_a in air,

a distance D_int between adjacent projections or recesses and a refractive index n_wav-a of the photoluminescent layer for the first light satisfy λ_a/n_wav-a<D_int<λ_a, and

a thickness of the photoluminescent layer, the refractive index n_wav-a and the distance D_int are set to limit a directional angle of the first light emitted from the light emitting surface.

[Item 34] The light-emitting device according to Item 33, wherein the submicron structure comprises a material different from that of the planarization layer.
[Item 35] The light-emitting device according to Item 34, wherein a refractive index n1 of the submicron structure for the first light, a refractive index n2 of the planarization layer for the first light, and the refractive index n_wav-a of the photoluminescent layer for the first light satisfy n1≦n2≦n_wav-a.
[Item 36] The light-emitting device according to Item 34 or 35, wherein the submicron structure comprises a material same as that of the photoluminescent layer.
[Item 37] The light-emitting device according to any one of Items 35 and 36, wherein the light-transmissive layer includes a base in contact with the planarization layer, and the planarization layer and the base have a total thickness less than half of λ_a/n_wav-a.
[Item 38] The light-emitting device according to Item 33, wherein the submicron structure comprises a material same as that of the planarization layer.
[Item 39] The light-emitting device according to any one of Items 33 to 37, wherein the refractive index n2 of the planarization layer for the first light and the refractive index n_wav-a of the photoluminescent layer for the first light satisfy n2=n_wav-a.
[Item 40] The light-emitting device according to any one of Items 33 to 38, wherein the refractive index n2 of the planarization layer for the first light and the refractive index n_wav-a of the photoluminescent layer for the first light satisfy n2<n_wav-a.
[Item 41] The light-emitting device according to any one of Items 38 to 40, wherein the planarization layer includes a base that supports the light-transmissive layer and is in contact with the photoluminescent layer, and the base has a thickness less than half of λ_a/n_wav-a.
[Item 42] The light-emitting device according to Item 39, wherein the planarization layer comprises the material of the photoluminescent layer.
[Item 43] The light-emitting device according to any one of Items 33 to 42, further including a light-transmissive substrate that supports the photoluminescent layer and is located on the photoluminescent layer opposite the planarization layer.
[Item 44] The light-emitting device according to Item 43, wherein the refractive index n_s of the light-transmissive substrate for the first light and the refractive index n_wav-a of the photoluminescent layer for the first light satisfy n_s<n_wav-a.
[Item 45] A light-emitting device including:

a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface;

a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers the first surface of the photoluminescent layer; and

a light-transmissive layer that is located on the planarization layer and comprises a submicron structure, wherein

at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,

the first light has a wavelength λ_a in air,

the submicron structure includes at least one periodic structure comprising at least projections or the recesses arranged perpendicular to the thickness direction of the photoluminescent layer,

a refractive index n_wav-a of the photoluminescent layer for the first light and a period p_a of the at least one periodic structure satisfy λ_a/n_wav-a<p_a<λ_a, and a thickness of the photoluminescent layer, the refractive index n_wav-a, and the period p_a are set to limit a directional angle of the first light emitted from the light emitting surface.

[Item 46] A light-emitting device including:

a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface;

a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers the first surface of the photoluminescent layer;

a light-transmissive layer that is located on the planarization layer and comprises a material different from that of the planarization layer; and

a submicron structure located on a portion of the light-transmissive layer, wherein

at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,

the first light has a wavelength λ_a in air,

the submicron structure includes at least one periodic structure comprising at least projections or the recesses arranged perpendicular to the thickness direction of the photoluminescent layer,

a refractive index n_wav-a of the photoluminescent layer for the first light and a period p_a of the at least one periodic structure satisfy λ_a/n_wav-a<p_a<λ_a, and a thickness of the photoluminescent layer, the refractive index n_wav-a and the period p_a are set to limit a directional angle of the first light emitted from the light emitting surface.

[Item 47] The light-emitting device according to any one of Items 33 to 46, wherein the submicron structure has both the projections and the recesses.
[Item 48] The light-emitting device according to any one of Items 33 to 47, wherein the photoluminescent layer includes a phosphor.
[Item 49] The light-emitting device according to any one of Items 33 to 48, wherein 380 nm≦λ_a≦780 nm is satisfied.
[Item 50] The light-emitting device according to any one of Items 33 to 49, wherein the thickness of the photoluminescent layer, the refractive index n_wav-a, and the distance D_int are set to allow an electric field to be formed in the photoluminescent layer, in which antinodes of the electric field are located in areas, the areas each corresponding to respective one of the projections and/or recesses.
[Item 51] The light-emitting device according to any one of Items 33 to 50, wherein the thickness of the photoluminescent layer, the refractive index n_wav-a, and the distance D_int are set to allow an electric field to be formed in the photoluminescent layer, in which antinodes of the electric field are located at, or adjacent to, at least the projections or recesses.
[Item 52] The light-emitting device according to any one of Items 33 to 51, further comprising a substrate that has a refractive index n_s-a for the first light and is located on the photoluminescent layer, wherein λ_a/n_wav-a<D_int<λ_a/n_s-a is satisfied.
[Item 53] A light-emitting apparatus including

the light-emitting device according to any one of Items 33 to 52, and

an excitation light source for irradiating the photoluminescent layer with excitation light.

A light-emitting device according to an embodiment of the present disclosure includes a photoluminescent layer, a light-transmissive layer located on or near the photoluminescent layer, and a submicron structure that is formed on at least one of the photoluminescent layer and the light-transmissive layer and that extends in a plane of the photoluminescent layer or the light-transmissive layer. The submicron structure has projections or recesses, light emitted from the photoluminescent layer includes first light having a wavelength λ_a in air, and the distance D_int between adjacent projections or recesses and the refractive index n_wav-a of the photoluminescent layer for the first light satisfy λ_a/n_wav-a<D_int<λ_a. The wavelength λ_a is, for example, within the visible wavelength range (for example, 380 to 780 nm).

The photoluminescent layer contains a photoluminescent material. The term “photoluminescent material” refers to a material that emits light in response to excitation light. The term “photoluminescent material” encompasses fluorescent materials and phosphorescent materials in a narrow sense, encompasses inorganic materials and organic materials (for example, dyes), and encompasses quantum dots (that is, tiny semiconductor particles). The photoluminescent layer may contain a matrix material (host material) in addition to the photoluminescent material. Examples of matrix materials include resins and inorganic materials such as glasses and oxides.

The light-transmissive layer located on or near the photoluminescent layer is made of a material with high transmittance to the light emitted from the photoluminescent layer, for example, inorganic materials or resins. For example, the light-transmissive layer is desirably formed of a dielectric material (particularly, an insulator having low light absorptivity). For example, the light-transmissive layer may be a substrate that supports the photoluminescent layer. If the surface of the photoluminescent layer facing air has the submicron structure, the air layer can serve as the light-transmissive layer.

In a light-emitting device according to an embodiment of the present disclosure, a submicron structure (for example, a periodic structure) on at least one of the photoluminescent layer and the light-transmissive layer forms a unique electric field distribution inside the photoluminescent layer and the light-transmissive layer, as described in detail later with reference to the results of calculations and experiments. This electric field distribution is formed by an interaction between guided light and the submicron structure and may also be referred to as a “quasi-guided mode”.

The quasi-guided mode can be utilized to improve the luminous efficiency, directionality, and polarization selectivity of photoluminescence, as described later. The term “quasi-guided mode” may be used in the following description to describe novel structures and/or mechanisms contemplated by the inventors. However, such a description is for illustrative purposes only and is not intended to limit the present disclosure in any way.

For example, the submicron structure has projections, and the distance (the center-to-center distance) D_int between adjacent projections satisfies λ_a/n_wav-a<D_int<λ_a. Instead of the projections, the submicron structure may have recesses. For simplicity, the following description will be directed to a submicron structure having projections. The symbol λ denotes the wavelength of light, and the symbol λ_a denotes the wavelength of light in air. The symbol n_wav denotes the refractive index of the photoluminescent layer. If the photoluminescent layer is a medium containing materials, the refractive index n_wav denotes the average refractive index of the materials weighted by their respective volume fractions.

Although it is desirable to use the symbol n_wav-a to refer to the refractive index for light having a wavelength λ_a because the refractive index n generally depends on the wavelength, it may be abbreviated for simplicity. The symbol n_wav basically denotes the refractive index of the photoluminescent layer; however, if a layer having a higher refractive index than the photoluminescent layer is adjacent to the photoluminescent layer, the refractive index n_wav denotes the average refractive index of the layer having a higher refractive index and the photoluminescent layer weighted by their respective volume fractions. This is optically equivalent to a photoluminescent layer composed of layers of different materials.

The effective refractive index n_eff of the medium for light in the quasi-guided mode satisfies n_a<n_eff<n_wav, wherein n_a denotes the refractive index of air. If light in the quasi-guided mode is assumed to be light propagating through the photoluminescent layer while being totally reflected at an angle of incidence θ, the effective refractive index n_eff can be written as n_eff=n_wav sin θ. The effective refractive index n_eff is determined by the refractive index of the medium present in the region where the electric field of the quasi-guided mode is distributed.

For example, if the submicron structure is formed in the light-transmissive layer, the effective refractive index n_eff depends not only on the refractive index of the photoluminescent layer but also on the refractive index of the light-transmissive layer. Because the electric field distribution also varies depending on the polarization direction of the quasi-guided mode (that is, the TE mode or the TM mode), the effective refractive index n_eff can differ between the TE mode and the TM mode.

The submicron structure is formed on at least one of the photoluminescent layer and the light-transmissive layer. If the photoluminescent layer and the light-transmissive layer are in contact with each other, the submicron structure may be formed on the interface between the photoluminescent layer and the light-transmissive layer. In such a case, the photoluminescent layer and the light-transmissive layer have the submicron structure. The photoluminescent layer may have no submicron structure. In such a case, a light-transmissive layer having a submicron structure is located on or near the photoluminescent layer. A phrase like “a light-transmissive layer (or its submicron structure) located on or near the photoluminescent layer”, as used herein, typically means that the distance between these layers is less than half the wavelength λ_a.

This allows the electric field of a guided mode to reach the submicron structure, thus forming a quasi-guided mode. However, the distance between the submicron structure of the light-transmissive layer and the photoluminescent layer may exceed half the wavelength λ_a if the light-transmissive layer has a higher refractive index than the photoluminescent layer. If the light-transmissive layer has a higher refractive index than the photoluminescent layer, light reaches the light-transmissive layer even if the above relationship is not satisfied. In the present specification, if the photoluminescent layer and the light-transmissive layer have a positional relationship that allows the electric field of a guided mode to reach the submicron structure and form a quasi-guided mode, they may be associated with each other.

The submicron structure, which satisfies λ_a/n_wav-a<D_int<λ_a, as described above, is characterized by a submicron size. The submicron structure includes at least one periodic structure, as in the light-emitting devices according to the embodiments described in detail later. The at least one periodic structure has a period p_a that satisfies λ_a/n_wav-a<p_a<λ_a. Thus, the submicron structure includes a periodic structure in which the distance D_int between adjacent projections is constant at p_a. If the submicron structure includes a periodic structure, light in the quasi-guided mode propagates while repeatedly interacting with the periodic structure so that the light is diffracted by the submicron structure. Unlike the phenomenon in which light propagating through free space is diffracted by a periodic structure, this is the phenomenon in which light is guided (that is, repeatedly totally reflected) while interacting with the periodic structure. This can efficiently diffract light even if the periodic structure causes a small phase shift (that is, even if the periodic structure has a small height).

The above mechanism can be utilized to improve the luminous efficiency of photoluminescence by the enhancement of the electric field due to the quasi-guided mode and also to couple the emitted light into the quasi-guided mode. The angle of travel of the light in the quasi-guided mode is varied by the angle of diffraction determined by the periodic structure. This can be utilized to output light of a particular wavelength in a particular direction (that is, significantly improve the directionality). Furthermore, high polarization selectivity can be simultaneously achieved because the effective refractive index n_eff (=n_wav sine) differs between the TE mode and the TM mode. For example, as demonstrated by the experimental examples below, a light-emitting device can be provided that outputs intense linearly polarized light (for example, the TM mode) of a particular wavelength (for example, 610 nm) in the front direction. The directional angle of the light output in the front direction is, for example, less than 15 degrees. The term “directional angle” refers to the angle of one side with respect to the front direction, which is assumed to be 0 degrees.

Conversely, a submicron structure having a lower periodicity results in a lower directionality, luminous efficiency, polarization, and wavelength selectivity. The periodicity of the submicron structure may be adjusted depending on the need. The periodic structure may be a one-dimensional periodic structure, which has a higher polarization selectivity, or a two-dimensional periodic structure, which allows for a lower polarization.

The submicron structure may include periodic structures. For example, these periodic structures may have different periods or different periodic directions (axes). The periodic structures may be formed on the same plane or may be stacked on top of each other. The light-emitting device may include photoluminescent layers and light-transmissive layers, and each of the layers may have submicron structures.

The submicron structure can be used not only to control the light emitted from the photoluminescent layer but also to efficiently guide excitation light into the photoluminescent layer. That is, the excitation light can be diffracted and coupled into the quasi-guided mode to guide light in the photoluminescent layer and the light-transmissive layer by the submicron structure to efficiently excite the photoluminescent layer. A submicron structure may be used that satisfies λ_ex/n_wav-ex<D_int<λ_ex, wherein λ_ex denotes the wavelength in air of the light that excites the photoluminescent material, and n_wav-ex denotes the refractive index of the photoluminescent layer for the excitation light. The symbol n_wav-ex denotes the refractive index of the photoluminescent layer for the emission wavelength of the photoluminescent material. Alternatively, a submicron structure may be used that includes a periodic structure having a period p_ex that satisfies λ_ex/n_wav-ex<p_ex<λ_ex. The excitation light has a wavelength λ_ex of 450 nm, for example, but may have a shorter wavelength than visible light. If the excitation light has a wavelength within the visible range, it may be output together with the light emitted from the photoluminescent layer.

1. Underlying Knowledge Forming Basis of the Present Disclosure

The underlying knowledge forming the basis for the present disclosure will be described before describing specific embodiments of the present disclosure. As described above, photoluminescent materials such as those used for fluorescent lamps and white LEDs emit light in all directions and thus require optical elements such as reflectors and lenses to emit light in a particular direction. These optical elements, however, can be eliminated (or the size thereof can be reduced) if the photoluminescent layer itself emits directional light. This results in a significant reduction in the size of optical devices and equipment. With this idea in mind, the inventors have conducted a detailed study on the photoluminescent layer to achieve directional light emission.

The inventors have investigated the possibility of inducing light emission with particular directionality so that the light emitted from the photoluminescent layer is localized in a particular direction. Based on Fermi's golden rule, the emission rate Γ, which is a measure characterizing light emission, is represented by the equation (1):

$\begin{array}{cc}\Gamma \left(r\right)=\frac{2\pi }{\hslash }{〈\left(d·E\left(r\right)\right)〉}^2\rho \left(\lambda \right)& \left(1\right)\end{array}$

In the equation (1), r is the vector indicating the position, λ is the wavelength of light, d is the dipole vector, E is the electric field vector, and ρ is the density of states. For many substances other than some crystalline substances, the dipole vector d is randomly oriented. The magnitude of the electric field E is substantially constant irrespective of the direction if the size and thickness of the photoluminescent layer are sufficiently larger than the wavelength of light. Hence, in most cases, the value of <(d·E(r))>² does not depend on the direction. Accordingly, the emission rate Γ is constant irrespective of the direction. Thus, in most cases, the photoluminescent layer emits light in all directions.

As can be seen from the equation (1), to achieve anisotropic light emission, it is necessary to align the dipole vector d in a particular direction or to enhance the component of the electric field vector in a particular direction. One of these approaches can be employed to achieve directional light emission. In the present disclosure, the results of a detailed study and analysis on structures for utilizing a quasi-guided mode in which the electric field component in a particular direction is enhanced by the confinement of light in the photoluminescent layer will be described below.

2. Structure for Enhancing Electric Field Only in Particular Direction

The inventors have investigated the possibility of controlling light emission using a guided mode with an intense electric field. Light can be coupled into a guided mode using a waveguide structure that itself contains a photoluminescent material. However, a waveguide structure simply formed using a photoluminescent material outputs little or no light in the front direction because the emitted light is coupled into a guided mode. Accordingly, the inventors have investigated the possibility of combining a waveguide containing a photoluminescent material with a periodic structure (including projections or recesses or both). When the electric field of light is guided in a waveguide while overlapping with a periodic structure located on or near the waveguide, a quasi-guided mode is formed by the effect of the periodic structure. That is, the quasi-guided mode is a guided mode restricted by the periodic structure and is characterized in that the antinodes of the amplitude of the electric field have the same period as the periodic structure. Light in this mode is confined in the waveguide structure to enhance the electric field in a particular direction. This mode also interacts with the periodic structure to undergo diffraction so that the light in this mode is converted into light propagating in a particular direction and can thus be output from the waveguide. The electric field of light other than the quasi-guided mode is not enhanced because little or no such light is confined in the waveguide. Thus, most light is coupled into a quasi-guided mode with a large electric field component.

That is, the inventors have investigated the possibility of using a photoluminescent layer containing a photoluminescent material as a waveguide (or a waveguide layer including a photoluminescent layer) in combination with a periodic structure located on or near the waveguide to couple light into a quasi-guided mode in which the light is converted into light propagating in a particular direction, thereby providing a directional light source.

As a simple waveguide structure, the inventors have studied slab waveguides. A slab waveguide has a planar structure in which light is guided. FIG. 30 is a schematic perspective view of a slab waveguide 110S. There is a mode of light propagating through the waveguide 110S if the waveguide 110S has a higher refractive index than a transparent substrate 140 that supports the waveguide 110S. If such a slab waveguide includes a photoluminescent layer, the electric field of light emitted from an emission point overlaps largely with the electric field of a guided mode. This allows most of the light emitted from the photoluminescent layer to be coupled into the guided mode. If the photoluminescent layer has a thickness close to the wavelength of the light, a situation can be created where there is only a guided mode with a large electric field amplitude.

If a periodic structure is located on or near the photoluminescent layer, the electric field of the guided mode interacts with the periodic structure to form a quasi-guided mode. Even if the photoluminescent layer is composed of a plurality of layers, a quasi-guided mode is formed as long as the electric field of the guided mode reaches the periodic structure. Not all parts of the photoluminescent layer needs to be formed of a photoluminescent material, provided that at least a portion of the photoluminescent layer functions to emit light.

If the periodic structure is made of a metal, a mode due to the guided mode and plasmon resonance is formed. This mode has different properties from the quasi-guided mode. This mode is less effective in enhancing emission because a large loss occurs due to high absorption by the metal. Thus, it is desirable to form the periodic structure using a dielectric material having low absorptivity.

The inventors have studied the coupling of light into a quasi-guided mode that can be output as light propagating in a particular angular direction using a periodic structure formed on a waveguide (for example, a photoluminescent layer). FIG. 1A is a schematic perspective view of a light-emitting device 100 including a waveguide (for example, a photoluminescent layer) 110 and a periodic structure (for example, a light-transmissive layer) 120. The light-transmissive layer 120 is hereinafter also referred to as a periodic structure 120 if the light-transmissive layer 120 forms a periodic structure (that is, if a periodic submicron structure is formed on the light-transmissive layer 120). In this example, the periodic structure 120 is a one-dimensional periodic structure in which stripe-shaped projections extending in the y direction are arranged at regular intervals in the x direction. FIG. 1B is a cross-sectional view of the light-emitting device 100 taken along a plane parallel to the xz plane. If a periodic structure 120 having a period p is provided in contact with the waveguide 110, a quasi-guided mode having a wave number k_wav in the in-plane direction is converted into light propagating outside the waveguide 110. The wave number k_out of the light can be represented by the equation (2):

$\begin{array}{cc}{k}_{\mathrm{out}}=k_{\mathrm{wav}}-m\frac{2\pi }{p}& \left(2\right)\end{array}$

wherein m is an integer indicating the diffraction order.

For simplicity, the light guided in the waveguide 110 is assumed to be a ray of light propagating at an angle θ_wav. This approximation gives the equations (3) and (4):

$\begin{array}{cc}\frac{k_{\mathrm{wav}}{\lambda }_0}{2\pi }=n_{\mathrm{wav}}\sin {\theta }_{\mathrm{wav}}& \left(3\right)\\ \frac{k_{\mathrm{out}}{\lambda }_0}{2\pi }=n_{\mathrm{out}}\sin {\theta }_{\mathrm{out}}& \left(4\right)\end{array}$

In these equations, λ₀ denotes the wavelength of the light in air, n_wav denotes the refractive index of the waveguide 110, N_out denotes the refractive index of the medium on the light output side, and N_out denotes the angle at which the light is output from the waveguide 110 to a substrate or air. From the equations (2) to (4), the output angle θ_out can be represented by the equation (5):

n_out sin θ_out=n_wav sin θ_wav−mλ₀/p  (5)

If n_wav sin θ_wav=mλ₀/p in the equation (5), this results in θ_out=0, meaning that the light can be emitted in the direction perpendicular to the plane of the waveguide 110 (that is, in the front direction).

Based on this principle, light can be coupled into a particular quasi-guided mode and be converted into light having a particular output angle using the periodic structure to output intense light in that direction.

There are some constraints to achieving the above situation. To form a quasi-guided mode, the light propagating through the waveguide 110 has to be totally reflected. The conditions therefor are represented by the inequality (6):

n_out<n_wav sin θ_wav  (6)

To diffract the quasi-guided mode using the periodic structure and thereby output the light from the waveguide 110, −1<sin θ_out<1 has to be satisfied in the equation (5). Hence, the inequality (7) has to be satisfied:

$\begin{array}{cc}-1<\frac{n_{\mathrm{wav}}}{n_{\mathrm{out}}}\sin {\theta }_{\mathrm{wav}}-\frac{m{\lambda }_0}{n_{\mathrm{out}}p}<1& \left(7\right)\end{array}$

Taking into account the inequality (6), the inequality (8) may be satisfied:

$\begin{array}{cc}\frac{m{\lambda }_0}{2n_{\mathrm{out}}}<p& \left(8\right)\end{array}$

To output the light from the waveguide 110 in the front direction (θ_out=0), as can be seen from the equation (5), the equation (9) has to be satisfied:

p=mλ₀/(n_wav sin θ_wav)  (9)

As can be seen from the equation (9) and the inequality (6), the required conditions are represented by the inequality (10):

$\begin{array}{cc}\frac{m{\lambda }_0}{n_{\mathrm{wav}}}<p<\frac{m{\lambda }_0}{n_{\mathrm{out}}}& \left(10\right)\end{array}$

If the periodic structure 120 as illustrated in FIGS. 1A and 1B is provided, it may be designed based on first-order diffracted light (that is, m=1) because higher-order diffracted light having m of 2 or more has low diffraction efficiency. In this embodiment, the period p of the periodic structure 120 is determined so as to satisfy the inequality (11), which is given by substituting m=1 into the inequality (10):

$\begin{array}{cc}\frac{{\lambda }_0}{n_{\mathrm{wav}}}<p<\frac{{\lambda }_0}{n_{\mathrm{out}}}& \left(11\right)\end{array}$

If the waveguide (photoluminescent layer) 110 is not in contact with a transparent substrate, as illustrated in FIGS. 1A and 1B, N_out is equal to the refractive index of air (approximately 1.0). Thus, the period p may be determined so as to satisfy the inequality (12):

$\begin{array}{cc}\frac{{\lambda }_0}{n_{\mathrm{wav}}}<p<{\lambda }_0& \left(12\right)\end{array}$

Alternatively, a structure as illustrated in FIGS. 1C and 1D may be employed in which the photoluminescent layer 110 and the periodic structure 120 are formed on a transparent substrate 140. The refractive index n_s of the transparent substrate 140 is higher than the refractive index of air. Thus, the period p may be determined so as to satisfy the inequality (13), which is given by substituting n_out=n_s into the inequality (11):

$\begin{array}{cc}\frac{{\lambda }_0}{n_{\mathrm{wav}}}<p<\frac{{\lambda }_0}{n_s}& \left(13\right)\end{array}$

Although m=1 is assumed in the inequality (10) to give the inequalities (12) and (13), m≧2 may be assumed. That is, if both surfaces of the light-emitting device 100 are in contact with air layers, as shown in FIGS. 1A and 1B, the period p may be determined so as to satisfy the inequality (14):

$\begin{array}{cc}\frac{m{\lambda }_0}{n_{\mathrm{wav}}}<p<m{\lambda }_0& \left(14\right)\end{array}$

wherein m is an integer of 1 or more.

Similarly, if the photoluminescent layer 110 is formed on the transparent substrate 140, as in the light-emitting device 100a illustrated in FIGS. 1C and 1D, the period p may be determined so as to satisfy the inequality (15):

$\begin{array}{cc}\frac{m{\lambda }_0}{n_{\mathrm{wav}}}<p<\frac{m{\lambda }_0}{n_s}& \left(15\right)\end{array}$

By determining the period p of the periodic structure so as to satisfy the above inequalities, the light emitted from the photoluminescent layer 110 can be output in the front direction, thus providing a directional light-emitting device.

3. Verification by Calculations

3-1. Period and Wavelength Dependence

The inventors verified, by optical analysis, whether the output of light in a particular direction as described above is actually possible. The optical analysis was performed by calculations using DiffractMOD available from Cybernet Systems Co., Ltd. In these calculations, the change in the absorption of external light incident perpendicular to a light-emitting device by a photoluminescent layer was calculated to determine the enhancement of light output perpendicular to the light-emitting device. The calculation of the process by which external incident light is coupled into a quasi-guided mode and is absorbed by the photoluminescent layer corresponds to the calculation of a process opposite to the process by which light emitted from the photoluminescent layer is coupled into a quasi-guided mode and is converted into propagating light output perpendicular to the light-emitting device. Similarly, the electric field distribution of a quasi-guided mode was calculated from the electric field of external incident light.

FIG. 2 shows the calculation results of the enhancement of light output in the front direction with varying emission wavelengths and varying periods of the periodic structure, where the photoluminescent layer was assumed to have a thickness of 1 μm and a refractive index n_wav of 1.8, and the periodic structure was assumed to have a height of 50 nm and a refractive index of 1.5. In these calculations, the periodic structure was assumed to be a one-dimensional periodic structure uniform in the y direction, as shown in FIG. 1A, and the polarization of the light was assumed to be the TM mode, which has an electric field component parallel to the y direction. The results in FIG. 2 show that there are enhancement peaks at certain combinations of wavelength and period. In FIG. 2, the magnitude of the enhancement is expressed by different shades of color; a darker color (black) indicates a higher enhancement, whereas a lighter color (white) indicates a lower enhancement.

In the above calculations, the periodic structure was assumed to have a rectangular cross section as shown in FIG. 1B. FIG. 3 is a graph illustrating the conditions for m=1 and m=3 in the inequality (10). A comparison between FIGS. 2 and 3 shows that the peaks in FIG. 2 are located within the regions corresponding to m=1 and m=3. The intensity is higher for m=1 because first-order diffracted light has a higher diffraction efficiency than third- or higher-order diffracted light. There is no peak for m=2 because of low diffraction efficiency in the periodic structure.

In FIG. 2, a plurality of lines are observed in each of the regions corresponding to m=1 and m=3 in FIG. 3. This indicates the presence of a plurality of quasi-guided modes.

3-2. Thickness Dependence

FIG. 4 is a graph showing the calculation results of the enhancement of light output in the front direction with varying emission wavelengths and varying thicknesses t of the photoluminescent layer, where the photoluminescent layer was assumed to have a refractive index n_wav of 1.8, and the periodic structure was assumed to have a period of 400 nm, a height of 50 nm, and a refractive index of 1.5. FIG. 4 shows that the enhancement of the light peaks at a particular thickness t of the photoluminescent layer.

FIGS. 5A and 5B show the calculation results of the electric field distributions of a mode to guide light in the x direction for a wavelength of 600 nm and thicknesses t of 238 nm and 539 nm, respectively, at which there are peaks in FIG. 4. For comparison, FIG. 5C shows the results of similar calculations for a thickness t of 300 nm, at which there is no peak. In these calculations, as in the above calculations, the periodic structure was a one-dimensional periodic structure uniform in the y direction. In each figure, a black region indicates a higher electric field intensity, whereas a white region indicates a lower electric field intensity. Whereas the results for t=238 nm and t=539 nm show high electric field intensity, the results for t=300 nm shows low electric field intensity as a whole. This is because there are guided modes for t=238 nm and t=539 nm so that light is strongly confined. Furthermore, regions with the highest electric field intensity (that is, antinodes) are necessarily present in or directly below the projections, indicating the correlation between the electric field and the periodic structure 120. Thus, the resulting guided mode depends on the arrangement of the periodic structure 120. A comparison between the results for t=238 nm and t=539 nm shows that these modes differ in the number of nodes (white regions) of the electric field in the z direction by one.

3-3. Polarization Dependence

To examine the polarization dependence, the enhancement of light was calculated under the same conditions as in FIG. 2 except that the polarization of the light was assumed to be the TE mode, which has an electric field component perpendicular to the y direction. FIG. 6 shows the results of these calculations. Although the peaks in FIG. 6 differ slightly in position from the peaks for the TM mode (FIG. 2), they are located within the regions shown in FIG. 3. This demonstrates that the structure according to this embodiment is effective for both of the TM mode and the TE mode.

3-4. Two-Dimensional Periodic Structure

The effect of a two-dimensional periodic structure was also studied. FIG. 7A is a partial plan view of a two-dimensional periodic structure 120′ including recesses and projections arranged in both of the x direction and the y direction. In FIG. 7A, the black regions indicate the projections, and the white regions indicate the recesses. For a two-dimensional periodic structure, both of the diffraction in the x direction and the diffraction in the y direction have to be taken into account. Although the diffraction in only the x direction or the y direction is similar to that in a one-dimensional periodic structure, a two-dimensional periodic structure can be expected to give different results from a one-dimensional periodic structure because diffraction also occurs in a direction containing both of an x component and a y component (for example, a direction inclined at 45 degrees). FIG. 7B shows the calculation results of the enhancement of light for the two-dimensional periodic structure. The calculations were performed under the same conditions as in FIG. 2 except for the type of periodic structure. As shown in FIG. 7B, peaks matching the peaks for the TE mode in FIG. 6 were observed in addition to peaks matching the peaks for the TM mode in FIG. 2. These results demonstrate that the two-dimensional periodic structure also converts and outputs the TE mode by diffraction. For a two-dimensional periodic structure, the diffraction that simultaneously satisfies the first-order diffraction conditions in both of the x direction and the y direction also has to be taken into account. Such diffracted light is output in the direction at the angle corresponding to √2 times (that is, 2^1/2 times) the period p. Thus, peaks will occur at √2 times the period p in addition to peaks that occur in a one-dimensional periodic structure. Such peaks are observed in FIG. 7B.

The two-dimensional periodic structure does not have to be a square grid structure having equal periods in the x direction and the y direction, as illustrated in FIG. 7A, but may be a hexagonal grid structure, as illustrated in FIG. 18A, or a triangular grid structure, as illustrated in FIG. 18B. The two-dimensional periodic structure may have different periods in different directions (for example, in the x direction and the y direction for a square grid structure).

In this embodiment, as demonstrated above, light in a characteristic quasi-guided mode formed by the periodic structure and the photoluminescent layer can be selectively output only in the front direction through diffraction by the periodic structure. With this structure, the photoluminescent layer can be excited with excitation light such as ultraviolet light or blue light to output directional light.

4. Study on Constructions of Periodic Structure and Photoluminescent Layer

The effects of changes in various conditions such as the constructions and refractive indices of the periodic structure and the photoluminescent layer will now be described.

4-1. Refractive Index of Periodic Structure

The refractive index of the periodic structure was studied. In the calculations performed herein, the photoluminescent layer was assumed to have a thickness of 200 nm and a refractive index n_wav of 1.8, the periodic structure was assumed to be a one-dimensional periodic structure uniform in the y direction, as shown in FIG. 1A, having a height of 50 nm and a period of 400 nm, and the polarization of the light was assumed to be the TM mode, which has an electric field component parallel to the y direction. FIG. 8 shows the calculation results of the enhancement of light output in the front direction with varying emission wavelengths and varying refractive indices of the periodic structure. FIG. 9 shows the results obtained under the same conditions except that the photoluminescent layer was assumed to have a thickness of 1,000 nm.

The results show that a photoluminescent layer having a thickness of 1,000 nm (FIG. 9) results in a smaller shift in the wavelength at which the light intensity peaks (referred to as a peak wavelength) with the change in the refractive index of the periodic structure than a photoluminescent layer having a thickness of 200 nm (FIG. 8). This is because the quasi-guided mode is more affected by the refractive index of the periodic structure as the photoluminescent layer is thinner. Specifically, a periodic structure having a higher refractive index increases the effective refractive index and thus shifts the peak wavelength toward longer wavelengths, and this effect is more noticeable as the photoluminescent layer is thinner. The effective refractive index is determined by the refractive index of the medium present in the region where the electric field of the quasi-guided mode is distributed.

The results also show that a periodic structure having a higher refractive index results in a broader peak and a lower intensity. This is because a periodic structure having a higher refractive index outputs light in the quasi-guided mode at a higher rate and is therefore less effective in confining the light, that is, has a lower Q value. To maintain a high peak intensity, a structure may be employed in which light is moderately output using a quasi-guided mode that is effective in confining the light (that is, has a high Q value). This means that it is undesirable to use a periodic structure made of a material having a much higher refractive index than the photoluminescent layer. Thus, in order to increase the peak intensity and Q value, the refractive index of a dielectric material constituting the periodic structure (that is, the light-transmissive layer) can be lower than or similar to the refractive index of the photoluminescent layer. This is also true if the photoluminescent layer contains materials other than photoluminescent materials.

4-2. Height of Periodic Structure

The height of the periodic structure was then studied. In the calculations performed herein, the photoluminescent layer was assumed to have a thickness of 1,000 nm and a refractive index n_wav of 1.8, the periodic structure was assumed to be a one-dimensional periodic structure uniform in the y direction, as shown in FIG. 1A, having a refractive index n_p of 1.5 and a period of 400 nm, and the polarization of the light was assumed to be the TM mode, which has an electric field component parallel to the y direction. FIG. 10 shows the calculation results of the enhancement of light output in the front direction with varying emission wavelengths and varying heights of the periodic structure. FIG. 11 shows the results of calculations performed under the same conditions except that the periodic structure was assumed to have a refractive index n_p of 2.0. Whereas the results in FIG. 10 show that the peak intensity and the Q value (that is, the peak line width) do not change above a certain height of the periodic structure, the results in FIG. 11 show that the peak intensity and the Q value decrease with increasing height of the periodic structure. If the refractive index n_wav of the photoluminescent layer is higher than the refractive index n_p of the periodic structure (FIG. 10), the light is totally reflected, and only a leaking (that is, evanescent) portion of the electric field of the quasi-guided mode interacts with the periodic structure. If the periodic structure has a sufficiently large height, the influence of the interaction between the evanescent portion of the electric field and the periodic structure remains constant irrespective of the height. In contrast, if the refractive index n_wav of the photoluminescent layer is lower than the refractive index n_p of the periodic structure (FIG. 11), the light reaches the surface of the periodic structure without being totally reflected and is therefore more influenced by a periodic structure with a larger height. As shown in FIG. 11, a height of approximately 100 nm is sufficient, and the peak intensity and the Q value decrease above a height of 150 nm. Thus, if the refractive index n_wav of the photoluminescent layer is lower than the refractive index n_p of the periodic structure, the periodic structure may have a height of 150 nm or less to achieve a high peak intensity and Q value.

4-3. Polarization Direction

The polarization direction was then studied. FIG. 12 shows the results of calculations performed under the same conditions as in FIG. 9 except that the polarization of the light was assumed to be the TE mode, which has an electric field component perpendicular to the y direction. The TE mode is more influenced by the periodic structure than the TM mode because the electric field of the quasi-guided mode leaks more largely for the TE mode than for the TM mode. Thus, the peak intensity and the Q value decrease more significantly for the TE mode than for the TM mode if the refractive index n_p of the periodic structure is higher than the refractive index n_wav of the photoluminescent layer.

4-4. Refractive Index of Photoluminescent Layer

The refractive index of the photoluminescent layer was then studied. FIG. 13 shows the results of calculations performed under the same conditions as in FIG. 9 except that the photoluminescent layer was assumed to have a refractive index n_wav of 1.5. The results for the photoluminescent layer having a refractive index n_wav of 1.5 are similar to the results in FIG. 9. However, light having a wavelength of 600 nm or more was not output in the front direction. This is because, from the inequality (10), λ₀<n_wav×p/m=1.5×400 nm/1=600 nm.

The above analysis demonstrates that a high peak intensity and Q value can be achieved if the periodic structure has a refractive index lower than or similar to the refractive index of the photoluminescent layer or if the periodic structure has a higher refractive index than the photoluminescent layer and a height of 150 nm or less.

5. Modified Examples

Modified Examples of the present embodiment will be described below.

5-1. Structure Including Substrate

As described above, the light-emitting device may have a structure in which the photoluminescent layer 110 and the periodic structure 120 are formed on the transparent substrate 140, as illustrated in FIGS. 1C and 1D. Such a light-emitting device 100a may be produced by forming a thin film of the photoluminescent material for the photoluminescent layer 110 (optionally containing a matrix material; the same applies hereinafter) on the transparent substrate 140 and then forming the periodic structure 120 thereon. In this structure, the refractive index n_s of the transparent substrate 140 has to be lower than or equal to the refractive index n_wav of the photoluminescent layer 110 so that the photoluminescent layer 110 and the periodic structure 120 function to output light in a particular direction. If the transparent substrate 140 is provided in contact with the photoluminescent layer 110, the period p has to be set so as to satisfy the inequality (15), which is given by replacing the refractive index n_out of the output medium in the inequality (10) by n_s.

To demonstrate this, calculations were performed under the same conditions as in FIG. 2 except that the photoluminescent layer 110 and the periodic structure 120 were assumed to be located on a transparent substrate 140 having a refractive index of 1.5. FIG. 14 shows the results of these calculations. As in the results in FIG. 2, light intensity peaks are observed at particular periods for each wavelength, although the ranges of periods where peaks appear differ from those in FIG. 2. FIG. 15 is a graph illustrating the condition represented by the inequality (15), which is given by substituting N_out=n_s into the inequality (10). In FIG. 14, light intensity peaks are observed in the regions corresponding to the ranges shown in FIG. 15.

Thus, for the light-emitting device 100a, in which the photoluminescent layer 110 and the periodic structure 120 are located on the transparent substrate 140, a period p that satisfies the inequality (15) is effective, and a period p that satisfies the inequality (13) is significantly effective.

5-2. Light-Emitting Apparatus Including Excitation Light Source

FIG. 16 is a schematic view of a light-emitting apparatus 200 including the light-emitting device 100 illustrated in FIGS. 1A and 1B and a light source 180 that emits excitation light toward the photoluminescent layer 110. In this embodiment, as described above, the photoluminescent layer can be excited with excitation light such as ultraviolet light or blue light to output directional light. The light source 180 can be configured to emit such excitation light to provide a directional light-emitting apparatus 200. Although the wavelength of the excitation light emitted from the light source 180 is typically within the ultraviolet or blue range, it is not necessarily within these ranges, but may be determined depending on the photoluminescent material for the photoluminescent layer 110. Although the light source 180 illustrated in FIG. 16 is configured to direct excitation light into the bottom surface of the photoluminescent layer 110, it may be configured otherwise, for example, to direct excitation light into the top surface of the photoluminescent layer 110.

The excitation light may be coupled into a quasi-guided mode to efficiently output light. FIGS. 17A to 17D illustrate this method. In this example, as in the structure illustrated in FIGS. 1C and 1D, the photoluminescent layer 110 and the periodic structure 120 are formed on the transparent substrate 140. As illustrated in FIG. 17A, the period p_x in the x direction is first determined so as to enhance light emission. As illustrated in FIG. 17B, the period p_y in the y direction is then determined so as to couple the excitation light into a quasi-guided mode. The period p_x is determined so as to satisfy the condition given by replacing p in the inequality (10) by p_x. The period p_y is determined so as to satisfy the inequality (16):

$\begin{array}{cc}\frac{m{\lambda }_{\mathrm{ex}}}{n_{\mathrm{wav}}}<p_y<\frac{m{\lambda }_{\mathrm{ex}}}{n_{\mathrm{out}}}& \left(16\right)\end{array}$

wherein m is an integer of 1 or more, λ_ex is the wavelength of the excitation light, and N_out is the refractive index of the medium having the highest refractive index of the media in contact with the photoluminescent layer 110 except the periodic structure 120.

In the example in FIGS. 17A to 17D, n_out is the refractive index n_s of the transparent substrate 140. For a structure including no transparent substrate 140, as illustrated in FIG. 16, n_out denotes the refractive index of air (approximately 1.0).

In particular, the excitation light can be more effectively converted into a quasi-guided mode if m=1, that is, if the period p_y is determined so as to satisfy the inequality (17):

$\begin{array}{cc}\frac{{\lambda }_{\mathrm{ex}}}{n_{\mathrm{wav}}}<p_y<\frac{{\lambda }_{\mathrm{ex}}}{n_{\mathrm{out}}}& \left(17\right)\end{array}$

Thus, the excitation light can be converted into a quasi-guided mode if the period p_y is set so as to satisfy the condition represented by the inequality (16) (particularly, the condition represented by the inequality (17)). As a result, the photoluminescent layer 110 can efficiently absorb the excitation light of the wavelength λ_ex.

FIGS. 17C and 17D are the calculation results of the proportion of absorbed light to light incident on the structures illustrated in FIGS. 17A and 17B, respectively, for each wavelength. In these calculations, p_x=365 nm, p_y=265 nm, the photoluminescent layer 110 was assumed to have an emission wavelength λ of about 600 nm, the excitation light was assumed to have a wavelength λ_ex of about 450 nm, and the photoluminescent layer 110 was assumed to have an extinction coefficient of 0.003. As shown in FIG. 17D, the photoluminescent layer 110 has high absorptivity not only for the light emitted from the photoluminescent layer 110 but also for the excitation light, that is, light having a wavelength of approximately 450 nm. This indicates that the incident light is effectively converted into a quasi-guided mode to increase the proportion of the light absorbed into the photoluminescent layer 110. The photoluminescent layer 110 also has high absorptivity for the emission wavelength, that is, approximately 600 nm. This indicates that light having a wavelength of approximately 600 nm incident on this structure is similarly effectively converted into a quasi-guided mode. The periodic structure 120 shown in FIG. 17B is a two-dimensional periodic structure including structures having different periods (that is, different periodic components) in the x direction and the y direction. Such a two-dimensional periodic structure including periodic components allows for high excitation efficiency and high output intensity. Although the excitation light is incident on the transparent substrate 140 in FIGS. 17A and 17B, the same effect can be achieved even if the excitation light is incident on the periodic structure 120.

Also available are two-dimensional periodic structures including periodic components as shown in FIGS. 18A and 18B. The structure illustrated in FIG. 18A includes periodically arranged projections or recesses having a hexagonal planar shape. The structure illustrated in FIG. 18B includes periodically arranged projections or recesses having a triangular planar shape. These structures have major axes (axes 1 to 3 in the examples in FIGS. 18A and 18B) that can be assumed to be periodic. Thus, the structures can have different periods in different axial directions. These periods may be set so as to increase the directionality of light beams of different wavelengths or to efficiently absorb the excitation light. In any case, each period is set so as to satisfy the condition corresponding to the inequality (10).

5-3. Periodic Structure on Transparent Substrate

As illustrated in FIGS. 19A and 19B, a periodic structure 120a may be formed on the transparent substrate 140, and the photoluminescent layer 110 may be located thereon. In the example in FIG. 19A, the photoluminescent layer 110 is formed along the texture of the periodic structure 120a on the transparent substrate 140. As a result, a periodic structure 120b with the same period is formed in the surface of the photoluminescent layer 110. In the example in FIG. 19B, the surface of the photoluminescent layer 110 is flattened. In these examples, directional light emission can be achieved by setting the period p of the periodic structure 120a so as to satisfy the inequality (15).

To verify the effect of these structures, the enhancement of light output from the structure in FIG. 19A in the front direction was calculated with varying emission wavelengths and varying periods of the periodic structure. In these calculations, the photoluminescent layer 110 was assumed to have a thickness of 1,000 nm and a refractive index n_wav of 1.8, the periodic structure 120a was assumed to be a one-dimensional periodic structure uniform in the y direction having a height of 50 nm, a refractive index n_p of 1.5, and a period of 400 nm, and the polarization of the light was assumed to be the TM mode, which has an electric field component parallel to the y direction. FIG. 19C shows the results of these calculations. In these calculations, light intensity peaks were observed at the periods that satisfy the condition represented by the inequality (15).

5-4. Powder

According to the above embodiment, light of any wavelength can be enhanced by adjusting the period of the periodic structure and the thickness of the photoluminescent layer. For example, if the structure illustrated in FIGS. 1A and 1B is formed using a photoluminescent material that emits light over a wide wavelength range, only light of a certain wavelength can be enhanced. Accordingly, the structure of the light-emitting device 100 as illustrated in FIGS. 1A and 1B may be provided in powder form for use as a fluorescent material. Alternatively, the light-emitting device 100 as illustrated in FIGS. 1A and 1B may be embedded in resin or glass.

The single structure as illustrated in FIGS. 1A and 1B can output only light of a certain wavelength in a particular direction and is therefore not suitable for outputting, for example, white light, which has a wide wavelength spectrum. Accordingly, as shown in FIG. 20, light-emitting devices 100 that differ in the conditions such as the period of the periodic structure and the thickness of the photoluminescent layer may be mixed in powder form to provide a light-emitting apparatus with a wide wavelength spectrum. In such a case, the individual light-emitting devices 100 have sizes of, for example, several micrometers to several millimeters in one direction and can include, for example, one- or two-dimensional periodic structures with several periods to several hundreds of periods.

5-5. Array of Structures with Different Periods

FIG. 21 is a plan view of a two-dimensional array of periodic structures having different periods on the photoluminescent layer. In this example, three types of periodic structures 120a, 120b, and 120c are arranged without any space therebetween. The periods of the periodic structures 120a, 120b, and 120c are set so as to output, for example, light in the red, green, and blue wavelength ranges, respectively, in the front direction. Thus, structures having different periods can be arranged on the photoluminescent layer to output directional light with a wide wavelength spectrum. The periodic structures are not necessarily configured as described above, but may be configured in any manner.

5-6. Layered Structure

FIG. 22 illustrates a light-emitting device including photoluminescent layers 110 each having a textured surface. A transparent substrate 140 is located between the photoluminescent layers 110. The texture on each of the photoluminescent layers 110 corresponds to the periodic structure or the submicron structure. The example in FIG. 22 includes three periodic structures having different periods. The periods of these periodic structures are set so as to output light in the red, green, and blue wavelength ranges in the front direction. The photoluminescent layer 110 in each layer is made of a material that emits light of the color corresponding to the period of the periodic structure in that layer. Thus, periodic structures having different periods can be stacked on top of each other to output directional light with a wide wavelength spectrum.

The number of layers and the constructions of the photoluminescent layer 110 and the periodic structure in each layer are not limited to those described above, but may be selected as appropriate. For example, for a structure including two layers, first and second photoluminescent layers are formed opposite each other with a light-transmissive substrate therebetween, and first and second periodic structures are formed on the surfaces of the first and second photoluminescent layers, respectively. In such a case, the first photoluminescent layer and the first periodic structure may together satisfy the condition corresponding to the inequality (15), whereas the second photoluminescent layer and the second periodic structure may together satisfy the condition corresponding to the inequality (15). For a structure including three or more layers, the photoluminescent layer and the periodic structure in each layer may satisfy the condition corresponding to the inequality (15). The positional relationship between the photoluminescent layers and the periodic structures in FIG. 22 may be reversed. Although the layers illustrated by the example in FIG. 22 have different periods, they may all have the same period. In such a case, although the spectrum cannot be broadened, the emission intensity can be increased.

5-7. Structure Including Protective Layer

FIG. 23 is a cross-sectional view of a structure including a protective layer 150 between the photoluminescent layer 110 and the periodic structure 120. The protective layer 150 may be provided to protect the photoluminescent layer 110. However, if the protective layer 150 has a lower refractive index than the photoluminescent layer 110, the electric field of the light leaks into the protective layer 150 only by about half the wavelength. Thus, if the protective layer 150 is thicker than the wavelength, no light reaches the periodic structure 120. As a result, there is no quasi-guided mode, and the function of outputting light in a particular direction cannot be achieved. If the protective layer 150 has a refractive index higher than or similar to that of the photoluminescent layer 110, the light reaches the interior of the protective layer 150; therefore, there is no limitation on the thickness of the protective layer 150. Nevertheless, a thinner protective layer 150 is desirable because more light is output if most of the portion in which light is guided (this portion is hereinafter referred to as “waveguide layer”) is made of a photoluminescent material. The protective layer 150 may be made of the same material as the periodic structure (light-transmissive layer) 120. In such a case, the light-transmissive layer 120 having the periodic structure functions as a protective layer. The light-transmissive layer 120 desirably has a lower refractive index than the photoluminescent layer 110.

6. Materials and Production Methods

Directional light emission can be achieved if the photoluminescent layer (or waveguide layer) and the periodic structure are made of materials that satisfy the above conditions. The periodic structure may be made of any material. However, a photoluminescent layer (or waveguide layer) or a periodic structure made of a medium with high light absorption is less effective in confining light and therefore results in a lower peak intensity and Q value. Thus, the photoluminescent layer (or waveguide layer) and the periodic structure may be made of media with relatively low light absorption.

For example, the periodic structure may be formed of a dielectric material having low light absorptivity. Examples of candidate materials for the periodic structure include magnesium fluoride (MgF₂), lithium fluoride (LiF), calcium fluoride (CaF₂), quartz (SiO₂), glasses, resins, magnesium oxide (MgO), indium tin oxide (ITO), titanium oxide (TiO₂), silicon nitride (SiN), tantalum pentoxide (Ta₂O₅), zirconia (ZrO₂), zinc selenide (ZnSe), and zinc sulfide (ZnS). To form a periodic structure having a lower refractive index than the photoluminescent layer, as described above, MgF₂, LiF, CaF₂, SiO₂, glasses, and resins can be used, which have refractive indices of approximately 1.3 to 1.5.

The term “photoluminescent material” encompasses fluorescent materials and phosphorescent materials in a narrow sense, encompasses inorganic materials and organic materials (for example, dyes), and encompasses quantum dots (that is, tiny semiconductor particles). In general, a fluorescent material containing an inorganic host material tends to have a higher refractive index. Examples of fluorescent materials that emit blue light include M₁₀(PO₄)₆Cl₂:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca), BaMgAl₁₀O₁₇:Eu²⁺, M₃MgSi₂O₈:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca), and M₅SiO₄Cl₆:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca). Examples of fluorescent materials that emit green light include M₂MgSi₂O₇:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca), SrSi₅AlO₂N₇:Eu²⁺, SrSi₂O₂N₂:Eu²⁺, BaAl₂O₄:Eu²⁺, BaZrSi₃O₉:Eu²⁺, M₂SiO₄:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca), BaSi₃O₄N₂:Eu²⁺, Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Ca₃SiO₄Cl₂:Eu²⁺, CaSi_12-(m+n)Al_(m+n)O_nN_16-n:Ce³⁺, and β-SiAlON:Eu²⁺. Examples of fluorescent materials that emit red light include CaAlSiN₃:Eu²⁺, SrAlSi₄O₇:Eu²⁺, M₂Si₅N₈:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca), MSiN₂:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca), MSi₂O₂N₂:Yb²⁺ (wherein M is at least one element selected from Sr and Ca), Y₂O₂S:Eu³⁺,Sm³⁺, La₂O₂S:Eu³⁺,Sm³⁺, CaWO₄:Li¹⁺,Eu³⁺,Sm³⁺, M₂SiS₄:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca), and M₃SiO₅:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca). Examples of fluorescent materials that emit yellow light include Y₃Al₅O₁₂:Ce³⁺, CaSi₂O₂N₂:Eu²⁺, Ca₃Sc₂Si₃O₁₂:Ce³⁺, CaSc₂O₄:Ce³⁺, α-SiAlON:Eu²⁺, MSi₂O₂N₂:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca), and M₇(SiO₃)₆Cl₂:Eu²⁺ (wherein M is at least one element selected from Ba, Sr, and Ca).

Examples of quantum dots include materials such as CdS, CdSe, core-shell CdSe/ZnS, and alloy CdSSe/ZnS. Light of various wavelengths can be emitted depending on the material. Examples of matrices for quantum dots include glasses and resins.

The transparent substrate 140, as shown in, for example, FIGS. 1C and 1D, is made of a light-transmissive material having a lower refractive index than the photoluminescent layer 110. Examples of such materials include magnesium fluoride (MgF₂), lithium fluoride (LiF), calcium fluoride (CaF₂), quartz (SiO₂), glasses, and resins.

Exemplary production methods will be described below.

A method for forming the structure illustrated in FIGS. 1C and 1D includes forming a thin film of the photoluminescent layer 110 on the transparent substrate 140, for example, by evaporation, sputtering, or coating of a fluorescent material, forming a dielectric film, and then patterning the dielectric film, for example, by photolithography to form the periodic structure 120. Alternatively, the periodic structure 120 may be formed by nanoimprinting. As shown in FIG. 24, the periodic structure 120 may also be formed by partially processing the photoluminescent layer 110. In such a case, the periodic structure 120 is made of the same material as the photoluminescent layer 110.

The light-emitting device 100 illustrated in FIGS. 1A and 1B can be manufactured, for example, by fabricating the light-emitting device 100a illustrated in FIGS. 1C and 1D and then stripping the photoluminescent layer 110 and the periodic structure 120 from the substrate 140.

The structure shown in FIG. 19A can be manufactured, for example, by forming the periodic structure 120a on the transparent substrate 140 by a process such as a semiconductor manufacturing processes or a nanoimprinting and then depositing thereon the material for the photoluminescent layer 110 by a process such as evaporation or sputtering. The structure shown in FIG. 19B can be manufactured by filling the recesses in the periodic structure 120a with the photoluminescent layer 110 by a process such as coating.

The above methods of manufacture are for illustrative purposes only, and the light-emitting devices according to the embodiments of the present disclosure may be manufactured by other methods.

Experimental Examples

Light-emitting devices according to embodiments of the present disclosure are illustrated by the following examples.

A sample light-emitting device having the structure as illustrated in FIG. 19A was prepared and evaluated for its properties. The light-emitting device was prepared as described below.

A one-dimensional periodic structure (stripe-shaped projections) having a period of 400 nm and a height of 40 nm was formed on a glass substrate, and a photoluminescent material, that is, YAG:Ce, was deposited thereon to a thickness of 210 nm. FIG. 25 shows a cross-sectional transmission electron microscopy (TEM) image of the resulting light-emitting device. FIG. 26 shows the results of measurements of the spectrum of light emitted from the light-emitting device in the front direction when YAG:Ce was excited with an LED having an emission wavelength of 450 nm. FIG. 26 shows the results (ref) for a light-emitting device including no periodic structure, the results for the TM mode, and the results for the TE mode. The TM mode has a polarization component parallel to the one-dimensional periodic structure. The TE mode has a polarization component perpendicular to the one-dimensional periodic structure. The results show that the intensity of light of a particular wavelength in the case with the periodic structure is significantly higher than without a periodic structure. The results also show that the light enhancement effect is greater for the TM mode, which has a polarization component parallel to the one-dimensional periodic structure.

FIGS. 27A to 27F and FIGS. 28A to 28F show the results of measurements and calculations of the angular dependence of the intensity of light output from the same sample. FIGS. 27B and 27E show the results of measurements and FIGS. 27C and 27F show the results of calculations for rotation about an axis parallel to the line direction of the one-dimensional periodic structure (that is, the periodic structure 120). FIGS. 28B and 28E show the results of measurements and FIGS. 28C and 28F show the results of calculations for rotation about an axis perpendicular to the line direction of the one-dimensional periodic structure (that is, the periodic structure 120).

FIGS. 27A to 27F and FIGS. 28A to 28F show the results for linearly polarized light in the TM mode and the TE mode. FIG. 27A shows the results for linearly polarized light in the TM mode. FIGS. 27D to 27F show the results for linearly polarized light in the TE mode. FIGS. 28A to 28C show the results for linearly polarized light in the TE mode. FIGS. 28D to 28F show the results for linearly polarized light in the TM mode. As can be seen from FIGS. 27A to 27F and FIGS. 28A to 28F, the enhancement effect is greater for the TM mode, and the enhanced wavelength shifts with angle. For example, light having a wavelength of 610 nm is observed only in the TM mode and in the front direction, indicating that the light is directional and polarized. In addition, the top and bottom parts of each figure match each other. Thus, the validity of the above calculations was experimentally demonstrated.

Among the above results of measurements, for example, FIG. 29 shows the angular dependence of the intensity of light having a wavelength of 610 nm for rotation about an axis perpendicular to the line direction. As shown in FIG. 29, the light was significantly enhanced in the front direction and was little enhanced at other angles. The directional angle of the light output in the front direction is less than 15 degrees. The directional angle is the angle at which the intensity is 50% of the maximum intensity and is expressed as the angle of one side with respect to the direction with the maximum intensity. This demonstrates that directional light emission was achieved. In addition, all the light was in the TM mode, which demonstrates that polarized light emission was simultaneously achieved.

Although YAG:Ce, which emits light in a wide wavelength range, was used in the above experiment, directional and polarized light emission can also be achieved using a similar structure including a photoluminescent material that emits light in a narrow wavelength range. Such a photoluminescent material does not emit light of other wavelengths and can therefore be used to provide a light source that does not emit light in other directions or in other polarized states.

7. Embodiments in which Planarization Layer Covers Surface of Photoluminescent Layer

In the embodiments described below, a planarization layer is formed on a surface of a photoluminescent layer in order to reduce the surface roughness (fine texture) on the light output side of the photoluminescent layer.

As described above, a photoluminescent layer is formed of a photoluminescent light-emitting material, such as a fluorescent material, a phosphorescent material, or quantum dots. For example, in the case of a photoluminescent layer formed of a YAG:Ce fluorescent material, a YAG thin film is formed on a substrate and is heat-treated at a high temperature in the range of 1000° C. to 1200° C. The heat treatment is performed to crystallize the YAG thin film and efficiently produce fluorescence.

However, owing to crystal growth, heat treatment at high temperatures may increase the surface roughness of the photoluminescent layer (the YAG thin film) or cause a fracture (crack) on the surface of the photoluminescent layer. A rough surface of the photoluminescent layer may reduce the directionality of light emitted from the light-emitting device and may lower the emission efficiency of the light-emitting device.

FIGS. 31A and 31B are atomic force microscope images of a surface of a YAG thin film heat-treated at 1200° C. FIGS. 31A and 31B show that the photoluminescent layer subjected to heat treatment has relatively large surface roughness. The surface of the photoluminescent layer has cracks. Such a rough surface tends to scatter light and makes it difficult to emit directional light.

A large difference in refractive index between the photoluminescent layer and a medium outside the light emission surface of the photoluminescent layer tends to cause total reflection at the interface therebetween. This is because a larger difference in refractive index results in a smaller critical angle and an increase in total reflection. Thus, even if the surface roughness is almost the same, a larger difference in refractive index between the photoluminescent layer and the external medium may have a greater influence on emitted light.

Thus, the product Rq×nd of the root-mean-square roughness Rq of the photoluminescent layer surface and the refractive index difference nd between the refractive index n_wav (=n_wav-a) of the photoluminescent layer and the refractive index n₂ of the external medium (the planarization layer described later) can be used as a measure of the interface characteristics of the photoluminescent layer surface. Rq×nd can be decreased to efficiently emit directional light.

For example, in the structure (slab waveguide) illustrated in FIG. 30, if the refractive index of the photoluminescent layer is 1.8, the root-mean-square roughness Rq of the photoluminescent layer surface is 10 nm, and the medium on the light output side is the air, then Rq×nd=10×(1.8−1.0)=8.0. An experiment of the present inventors showed that desired directional light can be emitted when Rq×nd is approximately 10 or less.

When various photoluminescent materials as well as the YAG thin film are used, a rough surface of the photoluminescent layer has an influence on directional light emission. For example, if the photoluminescent layer has Rq×nd=more than 10, that is, if the surface roughness (root-mean-square roughness Rq) is greater than Rq=10/0.8=12.5 nm for the refractive index difference of 0.8, this may hinder directional light emission.

In order to reduce the surface roughness Rq, the surface of the photoluminescent layer may be polished (for example, chemical mechanical polishing (CMP)). However, the use of such a method is undesirable because processing impairs the characteristics of the photoluminescent layer and is also undesirable in terms of cost and productivity. The photoluminescent layer has a thickness of approximately 200 nm, for example. It may therefore be difficult to flatten only the texture of the surface by polishing.

In the present embodiment, in order to reduce the effects of surface roughness by an easier process, a light-transmissive planarization layer covers the surface of the photoluminescent layer, and a periodic structure is formed as a submicron structure in the vicinity of the photoluminescent layer with the planarization layer interposed therebetween. This can suppress an increase in production costs and allows directional light to be efficiently emitted.

The refractive index of a planarization layer on a surface of the photoluminescent layer may be lower than or equal to the refractive index of the photoluminescent layer and higher than or equal to the refractive index of the light-transmissive layer of the periodic structure. As described later, the planarization layer may also act as the light-transmissive layer. In such a case, a periodic structure is formed on a surface of the planarization layer, and the periodic structure has the same refractive index as the planarization layer. The planarization layer may be formed of the material of the photoluminescent layer. In such a case, the planarization layer has substantially the same refractive index as the photoluminescent layer.

As described above, the refractive index difference nd between the photoluminescent layer and the planarization layer can be decreased to reduce total reflection at the interface. Thus, the material of the planarization layer may be a material having a refractive index close to the refractive index of the photoluminescent layer. For example, the material of the photoluminescent layer may be YAG:Ce (n=1.80), and the material of the planarization layer may be MgO (n=1.74).

The planarization layer may be formed by forming a resin layer on the photoluminescent layer by a spin coating method. The periodic structure may be formed by nanoimprint technology (thermal, UV, or electric field), dry etching, wet etching, or laser processing.

As in the embodiment described in [5-7. Structure Including Protective Layer] in which the protective layer 150 is formed (see FIG. 23), if the planarization layer has a lower refractive index than the photoluminescent layer, the planarization layer may have a relatively small thickness. For example, the planarization layer may have a thickness less than half the emission wavelength in the photoluminescent layer. When the light-transmissive layer formed independently of the planarization layer and covering the planarization layer includes a base (that is, a layered portion) under the periodic structure, the total thickness of the base of the light-transmissive layer and the planarization layer may be less than half the emission wavelength. The thickness of the planarization layer can be appropriately determined so as to allow the periodic structure to act appropriately for the formation of the quasi-guided mode and thereby allow directional light to be efficiently emitted. The emission wavelength corresponds to λ_a/n_wav-a, that is, the wavelength λ_a in air of light emitted from the photoluminescent layer divided by the refractive index n_wav-a of the photoluminescent layer.

Various specific embodiments in which the planarization layer covers the photoluminescent layer will be described below.

In FIG. 32A, a light-emitting device includes a planarization layer 160 covering a photoluminescent layer 110, and a light-transmissive layer 120 located on the planarization layer 160. The planarization layer 160 is located between the photoluminescent layer 110 and a periodic structure 120A (that is, a submicron structure) located on the light-transmissive layer 120. The bottom surface of the planarization layer 160 is in contact with the top surface of the photoluminescent layer 110, and the top surface of the planarization layer 160 is in contact with the bottom surface of the light-transmissive layer 120.

In the embodiment illustrated in FIG. 32A, the planarization layer 160 is formed of a material different from the materials of the photoluminescent layer 110 and the light-transmissive layer 120. The material of the planarization layer 160 is selected such that the refractive index n2 of the planarization layer 160 is lower than or equal to the refractive index n_wav of the photoluminescent layer 110 (for example, approximately 1.8) and higher than or equal to the refractive index n1 of the light-transmissive layer 120 (for example, approximately 1.5) (that is, n_wav≧n2≧n1). For example, the planarization layer 160 may be a transparent resin layer having a refractive index in the range of approximately 1.6 to 1.7 (a high-refractive-index polymer layer). In the present embodiment, the refractive index n_wav of the photoluminescent layer 110, the refractive index n1 of the light-transmissive layer 120, and the refractive index n2 of the planarization layer 160 are refractive indices for light having a wavelength λ_a (in air) emitted from the photoluminescent layer 110.

When the planarization layer 160 and the light-transmissive layer 120 are formed of different materials, the materials can be selected to be suitable for the functions of the layers. In particular, if the planarization layer 160 is formed of a material having a lower refractive index than the photoluminescent layer 110 (n2<n_wav), the quasi-guided mode tends to be appropriately formed even when the light output side of the photoluminescent layer 110 has relatively large surface roughness. Thus, the photoluminescent layer 110 can have a relatively large tolerance for surface roughness.

The thickness t of the planarization layer 160 is defined by a thickness of a portion of the planarization layer 160 other than a portion that fills the recesses in the surface of the photoluminescent layer 110 (a portion above the projections of the texture). In other words, the thickness t of the planarization layer 160 may be the distance from the top of the projections of the texture to the periodic structure 120A (or the light-transmissive layer 120). The thickness t of the planarization layer 160 thus defined may be 1 nm or more. It is not necessary to completely fill the recesses in the photoluminescent layer 110 with the planarization layer 160, provided that desired directional light can be emitted. To this end, the surface roughness Rq after the planarization layer 160 is formed may be 12.5 nm or less.

Typically, the planarization layer 160 has smaller surface roughness than the photoluminescent layer 110. While the value of Rq×nd described above remains unchanged, the formation of the planarization layer 160 can decrease the refractive index difference nd compared with at least the case where the external medium is air. Thus, the formation of the planarization layer 160 can improve the directionality of the device even if the surface roughness Rq is similar to the surface roughness of the photoluminescent layer.

In this manner, the surface of the photoluminescent layer 110 is flattened with the planarization layer 160, and the difference in refractive index between the photoluminescent layer 110 and air is decreased. The periodic structure 120A formed on the planarization layer 160 can more appropriately function to form the quasi-guided mode. It is advantageous if the projections of the periodic structure 120A have a height of 20 nm or more because this can particularly increase emission intensity at a particular wavelength.

FIG. 32B illustrates a structure in which the photoluminescent layer 110 is covered with the planarization layer 160, as illustrated in FIG. 32A. The light-transmissive layer 120 including the periodic structure 120A on the planarization layer 160 has a larger thickness than the structure in FIG. 32A. In this embodiment, the light-transmissive layer 120 includes a base (a layered portion) 120B having a relatively large thickness. The base 120B supports the periodic structure 120A, has a substantially uniform thickness, and extends in the plain. For example, the base 120B may be an unetched portion after the periodic structure 120A is formed by etching the light-transmissive layer 120, or a portion not pressed in the formation of the periodic structure 120A by a nanoimprint process (a residual film).

The structure illustrated in FIG. 32B has a relatively long distance between the surface of the photoluminescent layer 110 and the bottom surface of the periodic structure 120A (the bottom of the projections of the periodic structure 120A or a surface including exposed surfaces between the projections).

If the refractive index n1 of the light-transmissive layer 120 and the refractive index n2 of the planarization layer 160 are lower than the refractive index n_wav of the photoluminescent layer 110, only the photoluminescent layer 110 constitutes the waveguide layer, as described above. It is desirable that the total thickness of the planarization layer 160 and the base 120B of the light-transmissive layer 120 be less than half the emission wavelength λ_a/n_wav in order to allow the periodic structure 120A to act appropriately for the formation of the quasi-guided mode.

If the refractive index n1 of the light-transmissive layer 120 and the refractive index n2 of the planarization layer 160 are higher than or equal to the refractive index n_wav of the photoluminescent layer 110, light emitted from the photoluminescent layer 110 can enter the planarization layer 160 and the light-transmissive layer 120 at any incident angle without total reflection. Thus, even if the base 120B or the planarization layer 160 is slightly thick, the quasi-guided mode can be formed by the action of the periodic structure. However, the light output increases with increasing proportion of the photoluminescent layer 110 in the waveguide layer. Thus, it is desirable that the thickness of the base 120B of the light-transmissive layer 120 and the planarization layer 160 be as small as possible. The thickness of layers between the top surface of the photoluminescent layer 110 and the bottom surface of the periodic structure 120A may be less than half the emission wavelength λ_a/n_wav (λ_a/2n_wav).

The refractive index n2 of the planarization layer 160 may be substantially the same as the refractive index n_wav of the photoluminescent layer 110, and the refractive index n1 of the light-transmissive layer 120 may be lower than the refractive index n2 of the planarization layer 160 and the refractive index n_wav of the photoluminescent layer 110. In such a case, it is desirable that the thickness of the base 120B of the light-transmissive layer 120 be less than half the emission wavelength λ_a/n_wav.

FIG. 32C illustrates a structure in which the photoluminescent layer 110 is covered with the planarization layer 160, and the light-transmissive layer 120 including the periodic structure 120A is located on the planarization layer 160, as illustrated in FIG. 32A. The light-transmissive layer 120 is formed of the material of the photoluminescent layer 110. In FIG. 32D, the light-transmissive layer 120 is formed of the material of the photoluminescent layer 110, as in FIG. 32C, and the transmissive layer 120 includes a relatively thick base 120B (that is, a layered portion), as illustrated in FIG. 32B.

In the embodiments illustrated in FIGS. 32C and 32D, the photoluminescent layer 110 and the light-transmissive layer 120 have substantially the same refractive index. In this case, the planarization layer 160 between these layers may be formed of a material having a refractive index close to the refractive index n_wav of the photoluminescent layer 110. If the material of the planarization layer 160 has a refractive index close to the refractive index n_wav of the photoluminescent layer 110 (and the light-transmissive layer 120), the base 120B of the light-transmissive layer 120 illustrated in FIG. 32D can act as a waveguide layer, thus facilitating the emission of directional light. If there is a large difference between the refractive index n2 of the planarization layer 160 and the refractive index n_wav of the photoluminescent layer 110, it is desirable that the distance between the top surface of the photoluminescent layer 110 or the top surface of the planarization layer 160 and the bottom of the periodic structure 120A be less than half the emission wavelength.

In FIG. 32E, a light-transmissive planarization layer 160 covering the surface of the photoluminescent layer 110 has substantially the same function as the base of the light-transmissive layer 120 illustrated in FIGS. 32A to 32D. Thus, the planarization layer 160 is also used as a base, and the periodic structure 120A (and the light-transmissive layer 120 including the periodic structure 120A) is located on the surface of the planarization layer 160. In this embodiment, a layer of projections of the periodic structure 120A (and air between the projections) is a light-transmissive layer;

FIG. 32F illustrates a structure in which the planarization layer 160 covers the surface of the photoluminescent layer 110 as a base for supporting the light-transmissive layer 120 in the same manner as in FIG. 32E. In this embodiment, the planarization layer 160 is used as a base having a relatively large thickness.

In the embodiments illustrated in FIGS. 32E and 32F, the planarization layer 160 is used as a base for supporting the periodic structure 120A located thereon. The planarization layer 160 is located so as to cover a rough surface of the photoluminescent layer 110. The periodic structure 120A is formed of the material of the planarization layer 160.

As illustrated in FIG. 32E, the base of the planarization layer 160 has a minimum thickness enough to flatten a rough surface of the photoluminescent layer 110. The thickness of the base depends on the surface state of the photoluminescent layer 110. The thickness of the base refers to the distance between the top of the projections of the uneven photoluminescent layer 110 and the bottom of the periodic structure 120A. The thickness of the base may be 1 nm or more.

As illustrated in FIG. 32F, the thickness t of the planarization layer 160 may be increased. If the refractive index n2 of the planarization layer 160 is lower than the refractive index n_wav of the photoluminescent layer 110, the thickness of the base may be less than half the emission wavelength λ_a/n_wav.

In the embodiment illustrated in FIG. 32G, as illustrated in FIGS. 32E and 32F, the planarization layer 160 covering the surface of the photoluminescent layer 110 is also used as a base for supporting the light-transmissive layer 120, and the planarization layer 160 is formed of the material of the photoluminescent layer 110. Also in this case, as in the embodiments illustrated in FIGS. 32E and 32F, the periodic structure 120A is located on the planarization layer 160. The planarization layer 160 supports the periodic structure 120A and includes a base having at least a predetermined thickness. In this embodiment, because the photoluminescent layer 110 and the planarization layer 160 have substantially the same refractive index, the base of the planarization layer 160 may have any thickness. Light scattering at the interface between the planarization layer 160 and the photoluminescent layer 110 due to refractive index difference can be prevented in the structure illustrated in FIG. 32G. This results in low optical loss and consequently a greater light enhancement effect.

If the planarization layer 160 is formed of the material of the photoluminescent layer 110, light emission can also occur in the planarization layer 160 in response to the absorption of excitation light. Thus, the planarization layer 160 can be considered to be another photoluminescent layer located on the photoluminescent layer 110. In this case, the quasi-guided mode may be formed in the waveguide layer including the planarization layer 160 and the photoluminescent layer 110.

As illustrated in FIGS. 33A to 33F, the light-emitting device illustrated in FIGS. 32A to 32F may be further provided with a substrate 140 for supporting the photoluminescent layer 110. The planarization layer 160 and/or the light-transmissive layer 120 is located on the top surface of the photoluminescent layer 110 supported by the substrate 140, in the same manner as in FIGS. 32A to 32F. The periodic structure 120A is located on the surface of the light-transmissive layer 120 (or the surface of the planarization layer 160 in the case that the planarization layer 160 also serves as the light-transmissive layer 120).

In the presence of the substrate 140, the refractive index n_s of the substrate 140 and the refractive index n_wav of the photoluminescent layer are required to satisfy the conditions for the formation of the quasi-guided mode (the conditions for total reflection of light in the photoluminescent layer 110 at the interface between the photoluminescent layer 110 and the substrate 140). More specifically, in the presence of the substrate 140, the refractive index n_s of the substrate 140 and the refractive index n_wav of the photoluminescent layer 110 satisfy n_s<n_wav. This allows total reflection at the interface between the photoluminescent layer 110 and the substrate 140.

A method for producing the embodiment illustrated in FIG. 33G will be described below with reference to FIGS. 34A to 34F. By way of example, the periodic structure 120A is formed on the planarization layer 160 (a base of the light-transmissive layer 120) by a nanoimprint process.

As illustrated in FIG. 34A, first, a photoluminescent layer material is deposited on the substrate 140 having a refractive index n_s and is subjected to heat treatment at a temperature in the range of 1000° C. to 1200° C., for example. Thus, the photoluminescent layer 110 that can emit light in response to excitation light is formed. The surface of the photoluminescent layer 110 has relatively large roughness due to crystal growth, for example.

As illustrated in FIG. 34B, the planarization material 160′, for example, containing an organic metal solution is then deposited to cover the texture on the surface of the photoluminescent layer 110. As illustrated in FIG. 34C, a prebaking process is then performed to volatilize a solvent in the planarization material 160′. In the present embodiment, the planarization material 160′ is formed of the material of the photoluminescent layer 110.

As illustrated in FIG. 34D, a mold 165 is then pressed against the planarization material 160′ to change the surface profile of the planarization material 160′ into the shape of mold 165 (transfer). As illustrated in FIG. 34E, the mold is removed to form the planarization layer 160 and the periodic structure 120A on the planarization layer 160. Thus, the planarization layer 160 and the periodic structure 120A can be integrally formed.

As illustrated in FIG. 34F, if the planarization layer 160 is formed of the material of the photoluminescent layer 110, a firing process can be performed. The firing process is performed in order to decompose organic substances in the thin film (the planarization material 160′) after prebaking and form an amorphous film or in order to crystallize the planarization layer 160 at substantially the same temperature as the photoluminescent layer 110.

The pressing process illustrated in FIG. 34D may be performed before or simultaneously with the prebaking step illustrated in FIG. 34C. The embodiments illustrated in FIGS. 33E and 33F can also be produced in the same manner as described above except that the planarization layer 160 and the periodic structure 120A are formed of a material different from the material of the photoluminescent layer 110.

The periodic structure on the planarization layer 160 for reducing the surface roughness of the photoluminescent layer 110 can prevent scattering or total reflection on the surface of the photoluminescent layer 110 and can act appropriately. Thus, directional light can be emitted with high emission efficiency. In the present embodiment, the photoluminescent layer 110 and the planarization layer 160 are joined at the textured interface with high adhesiveness. Thus, the light-emitting device can have improved mechanical strength.

In the light-emitting devices described above, the material of the planarization layer 160 and the periodic structure 120A may be the material of the photoluminescent layer 110 described in the embodiments. Other materials include low-refractive-index magnesium fluoride (MgF₂), lithium fluoride (LiF), calcium fluoride (CaF₂), quartz (SiO₂), glass, resins, magnesium oxide (MgO), indium tin oxide (ITO), titanium oxide (TiO₂), silicon nitride (SiNx), tantalum dioxide (TaO₂), tantalum pentoxide (Ta₂O₅), zirconia (ZrO₂), zinc selenide (ZnSe), zinc sulfide (ZnS), magnesium fluoride (MgF₂), lithium fluoride (LiF), calcium fluoride (CaF₂), barium fluoride (BaF₂), strontium fluoride (SrF₂), nanocomposite resins, and silsesquioxanes [(RSiO₁₅)_n], such as HSQ•SOG. Examples of the resins include UV curing and thermosetting acrylic and epoxy resins. The nanocomposite resins may be zirconia (ZrO₂), silica (SiO₂), titania (TiO₂), and alumina (Al₂O₃) in order to increase the refractive index.

Light-emitting devices according to the present disclosure can be used to provide directional light-emitting apparatuses and can be applied to optical devices, such as lighting fixtures, displays, and projectors.

Claims

1. A light-emitting device comprising:

a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface;

a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers the first surface of the photoluminescent layer; and

a light-transmissive layer that is located on the planarization layer and comprises a submicron structure,

wherein the submicron structure has projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer,

at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,

the first light has a wavelength λa in air,

a distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy λa/nwav-a<Dint<λa, and

a thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

2. The light-emitting device according to claim 1, wherein the submicron structure comprises a material different from that of the planarization layer.

3. The light-emitting device according to claim 2, wherein a refractive index n1 of the submicron structure for the first light, a refractive index n2 of the planarization layer for the first light, and the refractive index nwav-a of the photoluminescent layer for the first light satisfy n1≦n2≦nwav-a.

4. The light-emitting device according to claim 2, wherein the submicron structure comprises a material same as that of the photoluminescent layer.

5. The light-emitting device according to claim 2, wherein the light-transmissive layer includes a base in contact with the planarization layer, and the planarization layer and the base have a total thickness less than half of λa/nwav-a.

6. The light-emitting device according to claim 1, wherein the submicron structure comprises a material same as that of the planarization layer.

7. The light-emitting device according to claim 1, wherein a refractive index n2 of the planarization layer for the first light and the refractive index nwav-a of the photoluminescent layer for the first light satisfy n2=nwav-a.

8. The light-emitting device according to claim 1, wherein a refractive index n2 of the planarization layer for the first light and the refractive index nwav-a of the photoluminescent layer for the first light satisfy n2<nwav-a.

9. The light-emitting device according to claim 6, wherein the planarization layer includes a base that supports the light-transmissive layer and is in contact with the photoluminescent layer, and the base has a thickness less than half of λa/nwav-a.

10. The light-emitting device according to claim 7, wherein the planarization layer comprises a material of the photoluminescent layer.

11. The light-emitting device according to claim 1, further comprising a light-transmissive substrate that supports the photoluminescent layer and is located on the photoluminescent layer opposite the planarization layer.

12. The light-emitting device according to claim 11, wherein a refractive index ns of the light-transmissive substrate for the first light and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ns<nwav-a.

13. A light-emitting device comprising:

a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface;

a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers the first surface of the photoluminescent layer; and

a light-transmissive layer that is located on the planarization layer and comprises a submicron structure, wherein

at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,

the first light has a wavelength λa in air,

the submicron structure includes at least one periodic structure comprising at least projections or the recesses arranged perpendicular to the thickness direction of the photoluminescent layer,

a refractive index nwav-a of the photoluminescent layer for the first light and a period pa of the at least one periodic structure satisfy λa/nwav-a<pa<λa, and

a thickness of the photoluminescent layer, the refractive index nwav-a, and the period pa are set to limit a directional angle of the first light emitted from the light emitting surface.

14. A light-emitting device comprising:

a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface;

a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers the first surface of the photoluminescent layer;

a light-transmissive layer that is located on the planarization layer and comprises a material different from that of the planarization layer; and

a submicron structure located on a portion of the light-transmissive layer, wherein

at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,

the first light has a wavelength λa in air,

the submicron structure includes at least one periodic structure comprising at least projections or the recesses arranged perpendicular to the thickness direction of the photoluminescent layer,

a refractive index nwav-a of the photoluminescent layer for the first light and a period pa of the at least one periodic structure satisfy λa/nwav-a<pa<λa, and

a thickness of the photoluminescent layer, the refractive index nwav-a, and the period pa are set to limit a directional angle of the first light emitted from the light emitting surface.

15. The light-emitting device according to claim 1, wherein the submicron structure has both the projections and the recesses.

16. A light-emitting apparatus comprising:

ht-emitting device according to claim 1; and

an excitation light source for irradiating the photoluminescent layer with excitation light.

17. The light-emitting device according to claim 1, wherein the photoluminescent layer includes a phosphor.

18. The light-emitting device according to claim 1, wherein 380 nm≦Δa≦780 nm is satisfied.

19. The light-emitting device according to claim 1, wherein the thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to allow an electric field to be formed in the photoluminescent layer, in which antinodes of the electric field are located in areas, the areas each corresponding to respective one of the projections and/or recesses.

20. The light-emitting device according to claim 1, wherein the thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to allow an electric field to be formed in the photoluminescent layer, in which antinodes of the electric field are located at, or adjacent to, at least the projections or recesses.

21. The light-emitting device according to claim 1, further comprising a substrate that has a refractive index ns-a for the first light and is located on the photoluminescent layer, wherein λa/nwav-a<Dint<λa/ns-a is satisfied.