Abstract: A circuit board includes a base substrate, a busbar disposed on a mounting surface of the base substrate; and an electronic component disposed on the mounting surface and including a plurality of terminals. At least one of the terminals is soldered to a component connecting end portion extending from the busbar. The base substrate has an opening into which the component connecting end portion is inserted. A first insertion portion is provided in the component connecting end portion. The terminal is inserted through the first insertion portion. The busbar is fixed to the base substrate so that the component connecting end portion is inserted into the opening with a soldering surface positioned closer to a rear surface of the base substrate than the component mounting surface. The soldering surface is on a side of the component connecting end portion where the terminal inserted through the first insertion portion protrudes.

Abstract: To provide Zinc Sulfide activated with Silver (ZnS:Ag) based fluorescent material for detecting particle beams, having lower gamma-ray sensitivity and providing lower afterglow, and being specialized for the purpose of detecting particle beams, and its manufacturing method. Zinc Sulfide activated with Silver (ZnS:Ag) based fluorescent material for detecting particle beams emits fluorescence with wavelengths from 320 nm to 580 nm in response to alpha-ray irradiation, and has a fluorescence spectrum with a peak wavelength from 395 nm to 410 nm.

Abstract: A circuit board includes a base substrate, a busbar disposed on a mounting surface-side of the base substrate; and an electronic component disposed on the mounting surface-side and including a plurality of terminals, at least one of which is soldered to a component connecting end portion extending from the busbar. The base substrate has an opening into which the component connecting end portion can be inserted. A first insertion portion through which the terminal can be inserted is provided in the component connecting end portion. The busbar is fixed to the base substrate so that the component connecting end portion is inserted into the opening with a soldering surface, on a side of the component connecting end portion where the terminal inserted through the first insertion portion protrudes, positioned closer to a rear surface of the base substrate than the component mounting surface.

Abstract: To provide Zinc Sulfide activated with Silver (ZnS:Ag) based fluorescent material for detecting particle beams, having lower gamma-ray sensitivity and providing lower afterglow, and being specialized for the purpose of detecting particle beams, and its manufacturing method. Zinc Sulfide activated with Silver (ZnS:Ag) based fluorescent material for detecting particle beams emits fluorescence with wavelengths from 320 nm to 580 nmin response to alpha-ray irradiation, and has a fluorescence spectrum with a peak wavelength from 395 nm to 410 nm.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: A light emitting diode having a mount lead having a cup and a lead, an LED chip mounted in the cup of said mount lead with one of electrodes being electrically connected to said mount lead, a coating material filling the cup of said mount lead to cover said LED chip; a molding material covering said LED chip, said coating material and the cup of said mount lead, and a phosphor absorbing a part of light emitted by said LED chip and emitting light of wavelength different from that of the absorbed light, wherein said phosphor is located in said coating material, and wherein said molding material is shaped to form a concave lens.

Abstract: A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: A method for manufacturing a light emitting device comprises: preparing a light emitting component having an active layer of a semiconductor, the active layer comprising a gallium nitride based semiconductor containing indium and being capable of emitting a blue color light; preparing a phosphor capable of absorbing a part of the blue color light emitted from the light emitting component and emitting a yellow color light, wherein selection of the phosphor is controlled based on an emission wavelength of the light emitting component; and combining the light emitting component and the phosphor so that the blue color light from the light emitting component and the yellow color light from the phosphor are mixed to make a white color light.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.

Abstract: A light emitting diode comprising a lead, an LED chip mounted on said lead, said LED chip having a substrate and semiconductor layers formed on said substrate, a transparent material covering said LED chip, and a phosphor contained in said transparent material and absorbing a part of light emitted by said LED chip and emitting light of wavelength different from that of the absorbed light, wherein the main emission peak of said LED chip is within the range from 400 nm to 530 nm, and said LED chip is mounted on said lead with substrate-side up and is electrically connected with said lead by a metallic bump.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: A device for emitting various colors by mixing light from a first light emitting diode and light from a second light emitting diode comprises, according to one embodiment: the first light emitting diode including an LED chip comprising InGaN and being capable of emitting a blue color light, and a phosphor capable of absorbing a part of the blue color light and emitting a yellow color light, the blue color light and the yellow color light being mixed to make white-color light; the second light emitting diode being capable of emitting red, green or blue color light; and a drive circuit for separately driving each of the first and second light emitting diode.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: A method for manufacturing a light emitting device comprises: preparing a light emitting component having an active layer of a semiconductor, the active layer comprising a gallium nitride based semiconductor containing indium and being capable of emitting a blue color light; preparing a phosphor capable of absorbing a part of the blue color light emitted from the light emitting component and emitting a yellow color light, wherein selection of the phosphor is controlled based on an emission wavelength of the light emitting component; and combining the light emitting component and the phosphor so that the blue color light from the light emitting component and the yellow color light from the phosphor are mixed to make a white color light.