Patents by Inventor Yasunobu Noguchi
Yasunobu Noguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7126274Abstract: A light emittng device according to one aspect of the present invention includes a first light emitting component including a light-emitting semiconductor layer that emits light in a blue region, a second light emitting component including a light-emitting semiconductor layer that emits light in a red region, and a phosphor capable of absorbing a part of light emitted by the first light emitting component and emitting light in a yellow region.Type: GrantFiled: June 10, 2004Date of Patent: October 24, 2006Assignee: Nichia CorporationInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 7071616Abstract: A light source having a planar main surface capable of emitting a white light includes a blue LED, an optical guide plate having a planar main surface and an edge face receiving injection of the light from the blue LED, and a coating material of transparent resin or glass containing fluorescent materials positioned between the blue LED and the optical guide plate. The fluorescent materials can be exited by absorption of a part of the blue light from the blue LED to emit fluorescent light and the fluorescent light can be mixed with a remaining part of the blue light to make white light in the optical guide plate.Type: GrantFiled: July 1, 2003Date of Patent: July 4, 2006Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi, Eiji Nakanishi
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Patent number: 7026756Abstract: A light emitting device includes a light emitting component having an active layer of a semiconductor and a phosphor capable of absorbing a part of light emitted from the light emitting component and emitting light of wavelength different from that of the absorbed light, wherein the light emitting component is a LED which has an active layer constituting a gallium nitride based semiconductor containing Indium and is capable of emitting a blue color light with a peak wavelength within the range from 420 to 490 nm. The phosphor is a garnet fluorescent material activated with cerium which is capable of absorbing a part of the blue color light and thereby emitting light having a broad emission spectrum with a peak wavelength existing around the range from 510 to 600 nm and a tail continuing into the region from 700 to 750 nm.Type: GrantFiled: October 3, 2003Date of Patent: April 11, 2006Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20060033418Abstract: The present invention provides a green emitting yttrium silicate phosphor, which has an improved temperature characteristic and life, and a cathode-ray tube using it. A green emitting yttrium silicate phosphor according to the present invention comprises a composition having the general composition (Y, Sc, Tb)2SiO5, wherein the mole ratio of Sc to the entire rare-earth element in the phosphor is 0.045<Sc/(Y+Sc+Tb)<0.17. Adding the above concentration range of Sc improves its temperature characteristic and life. It is more preferable that the concentration range is 0.07<Sc/(Y+Sc+Tb)<0.13.Type: ApplicationFiled: November 10, 2004Publication date: February 16, 2006Inventors: Yasunobu Noguchi, Seiji Niki, Kanji Tanaka, Shunji Fukushima
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Publication number: 20050280357Abstract: A light emitting device accoridng to an emboidment includes a first light emitting component including a semiconductor layer that is doped with an impurity, the first light emitting component emitting light in a blue region; a second light emitting component including a light-emitting semiconductor layer that emits light in a red region; and a phosphor capable of absorbing a part of the light emitted by the first light emitting component, and emitting light in a yellow region. The phosphor is not substantially excited by the light from the second light emitting component. The light emitting device is capable of emitting red/white light.Type: ApplicationFiled: August 23, 2005Publication date: December 22, 2005Inventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20040222435Abstract: A light emitting device includes a first light emitting component including a light-emitting semiconductor layer that emits light in blue region, a second light emitting component including a light-emitting semiconductor layer that emits light in red region, and a phosphor capable of absorbing a part of light emitted by the first light emitting component and emitting light in yellow region.Type: ApplicationFiled: June 10, 2004Publication date: November 11, 2004Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20040090180Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium. which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: ApplicationFiled: October 3, 2003Publication date: May 13, 2004Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20040004437Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: ApplicationFiled: July 1, 2003Publication date: January 8, 2004Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20040000868Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: ApplicationFiled: July 1, 2003Publication date: January 1, 2004Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 6660187Abstract: A phosphor for use with low speed electron beams is characterized by the following general composition formula. (Y, Ce)2O3.nSiO2 0.4≦n<1.Type: GrantFiled: June 6, 2002Date of Patent: December 9, 2003Assignees: Nichia Corporation, Futaba CorporationInventors: Yasunobu Noguchi, Kiyoshi Tamura
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Patent number: 6614179Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: GrantFiled: December 10, 1999Date of Patent: September 2, 2003Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 6608332Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: GrantFiled: December 15, 2000Date of Patent: August 19, 2003Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20030006400Abstract: A phosphor for use with low speed electron beams is characterized by the following general composition formula.Type: ApplicationFiled: June 6, 2002Publication date: January 9, 2003Inventors: Yasunobu Noguchi, Kiyoshi Tamura
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Publication number: 20010001207Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: ApplicationFiled: December 15, 2000Publication date: May 17, 2001Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 6069440Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: GrantFiled: April 28, 1999Date of Patent: May 30, 2000Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 5998925Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: GrantFiled: July 29, 1997Date of Patent: December 7, 1999Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 5968492Abstract: A composition suitable for hair care which has excellent hair conditioning effects and provides a pleasant sensory feeling during use. The composition contains basic amino acids and high alcohols, and is preferably free of non-polymeric alkyl quaternary ammonium salts, which are irritating and poorly biodegradable. The composition may also contain cationic polymers to enhance the conditioning effects. Anionic surface active agents, ampholytic surface active agents, or both, may also be incorporated into the hair care composition in order to impart hair cleansing properties.Type: GrantFiled: September 2, 1997Date of Patent: October 19, 1999Assignee: Ajinomoto Co., Inc.Inventors: Yasunobu Noguchi, Tatsuru Tabohashi
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Patent number: 5958869Abstract: Provided is a novel surfactant which is less irritating to the skin or the mucous membrane than prior art surfactants, which exhibits excellent conditioning effects and fabric softening effects, and which can be widely used in a toiletry or detergent composition. Basic amino-acid derivatives or salts thereof obtained by reacting glycidyl ethers with basic amino acids or salts thereof are incorporated into a toiletry or detergent composition or a conditioning agent.Type: GrantFiled: May 19, 1998Date of Patent: September 28, 1999Assignee: Ajinomoto Co., Inc.Inventors: Yasunobu Noguchi, Keigo Sano, Tatsuru Tabohashi, Masao Honma
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Patent number: 5919748Abstract: Provided is a novel surfactant which is less irritating to the skin or the mucous membrane than prior art surfactants, which exhibits excellent conditioning effects and fabric softening effects, and which can be widely used in a toiletry or detergent composition. Basic amino-acid derivatives or salts thereof obtained by reacting glycidyl ethers with basic amino acids or salts thereof are incorporated into a toiletry or detergent composition or a conditioning agent.Type: GrantFiled: February 6, 1997Date of Patent: July 6, 1999Assignee: Ajinomoto Co., Inc.Inventors: Yasunobu Noguchi, Keigo Sano, Tatsuru Tabohashi, Masao Honma
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Patent number: 5616552Abstract: The present invention provides a novel detergent composition containing an N-acylthreonine salt which exhibits little irritation to the skin and hair as well as an improved foam maintenance, foam quality and feel upon use.A detergent composition containing (A) N-acylthreonine salt in which the acyl group is a fatty acid residue having 8-22 carbon atoms and (B) higher fatty acid salt having 8-22 carbon atoms and also a detergent composition as such which further contains another surface-active agent.Type: GrantFiled: June 15, 1995Date of Patent: April 1, 1997Assignee: Ajinomoto Co., Inc.Inventors: Hideki Yoshihara, Yoshihiro Kobayashi, Yasunobu Noguchi, Manabu Kitazawa