Patents by Inventor Yasunori Agata

Yasunori Agata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240186383
    Abstract: Provided is a semiconductor device which includes a semiconductor substrate that has an upper surface and a lower surface and includes a bulk donor. A hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction has a first hydrogen concentration peak and a second hydrogen concentration peak disposed between the lower surface of the semiconductor substrate and the first hydrogen concentration peak. An intermediate region including an intermediate donor concentration is provided between the first hydrogen concentration peak and the second hydrogen concentration peak.
    Type: Application
    Filed: February 8, 2024
    Publication date: June 6, 2024
    Inventor: Yasunori AGATA
  • Publication number: 20240162287
    Abstract: Provided is a semiconductor device comprising: a drift region of a first conductivity type which is provided in a semiconductor substrate having a front surface and a back surface; and a back surface side region of the first conductivity type or a second conductivity type which is provided on a back surface side of the semiconductor substrate relative to the drift region in the semiconductor substrate and has a higher atomic density than the drift region.
    Type: Application
    Filed: January 22, 2024
    Publication date: May 16, 2024
    Inventors: Yasunori AGATA, Takashi YOSHIMURA
  • Publication number: 20240162285
    Abstract: Provided is a semiconductor device including an active portion arranged below an upper surface electrode and an edge termination structure portion arranged between the upper surface electrode and an end side of a semiconductor substrate in a top view, in which the active portion includes an active collector region, the edge termination structure portion includes an edge collector region, and an integrated value of a carrier concentration of the active collector region in a depth direction is larger than an integrated value of a carrier concentration of the edge collector region in the depth direction. An upper end position of the active collector region in the depth direction and an upper end position of the edge collector region in the depth direction may differ.
    Type: Application
    Filed: September 21, 2023
    Publication date: May 16, 2024
    Inventors: Tohru SHIRAKAWA, Yasunori AGATA, Kaname MITSUZUKA
  • Patent number: 11984482
    Abstract: Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: May 14, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yasunori Agata, Takashi Yoshimura, Hiroshi Takishita
  • Patent number: 11972950
    Abstract: There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: April 30, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Misaki Meguro, Takashi Yoshimura, Hiroshi Takishita, Naoko Kodama, Yasunori Agata
  • Publication number: 20240096629
    Abstract: A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.
    Type: Application
    Filed: November 19, 2023
    Publication date: March 21, 2024
    Inventors: Yasunori AGATA, Takahiro TAMURA, Toru AJIKI
  • Patent number: 11901419
    Abstract: Provided is a semiconductor device which includes a semiconductor substrate that has an upper surface and a lower surface. A hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction has a first hydrogen concentration peak and a second hydrogen concentration peak disposed closer to the lower surface side of the semiconductor substrate than the first hydrogen concentration peak. An intermediate donor concentration between the first hydrogen concentration peak and the second hydrogen concentration peak is different from any of an upper surface side donor concentration between the first hydrogen concentration peak and the upper surface of the semiconductor substrate and a lower surface side donor concentration between the second hydrogen concentration peak and the lower surface of the semiconductor substrate. The intermediate donor concentration may be higher than either the upper surface side donor concentration or the lower surface side donor concentration.
    Type: Grant
    Filed: September 28, 2021
    Date of Patent: February 13, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Yasunori Agata
  • Patent number: 11854782
    Abstract: A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.
    Type: Grant
    Filed: June 23, 2022
    Date of Patent: December 26, 2023
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yasunori Agata, Takahiro Tamura, Toru Ajiki
  • Publication number: 20230360915
    Abstract: A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.
    Type: Application
    Filed: July 20, 2023
    Publication date: November 9, 2023
    Inventors: Yasunori AGATA, Takashi YOSHIMURA, Hiroshi TAKISHITA, Misaki MEGURO, Naoko KODAMA, Yoshihiro IKURA, Seiji NOGUCHI, Yuichi HARADA, Yosuke SAKURAI
  • Patent number: 11735424
    Abstract: A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.
    Type: Grant
    Filed: May 18, 2022
    Date of Patent: August 22, 2023
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yasunori Agata, Takashi Yoshimura, Hiroshi Takishita, Misaki Meguro, Naoko Kodama, Yoshihiro Ikura, Seiji Noguchi, Yuichi Harada, Yosuke Sakurai
  • Patent number: 11574999
    Abstract: Provided is a semiconductor device comprising an active region and an edge region, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a first collector region of the second conductivity type provided below the drift region in the active region; and a second collector region of the second conductivity type provided below the drift region in the edge region, wherein a doping concentration of the first collector region is higher than a doping concentration of the second collector region, wherein an area of the first collector region is of the same size as an area of the second collector region or larger than the area of the second collector region, in a top plan view.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: February 7, 2023
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Tohru Shirakawa, Yasunori Agata, Kaname Mitsuzuka
  • Publication number: 20220392858
    Abstract: There is provided a semiconductor device including: a pad portion that is provided above the upper surface of the semiconductor substrate and that is separated from the emitter electrode; a wire wiring portion that is connected to a connection region on an upper surface of the pad portion; a wiring layer that is provided between the semiconductor substrate and the pad portion and that includes a region overlapping the connection region; an interlayer dielectric film that is provided between the wiring layer and the pad portion and that has a through hole below the connection region; a tungsten portion that contains tungsten and that is provided inside the through hole and electrically connects the wiring layer and the pad portion; and a barrier metal layer that contains titanium and that is provided to cover an upper surface of the interlayer dielectric film below the connection region.
    Type: Application
    Filed: August 17, 2022
    Publication date: December 8, 2022
    Inventors: Tohru SHIRAKAWA, Yasunori AGATA, Naoki SAEGUSA
  • Publication number: 20220392815
    Abstract: There is provided a semiconductor device including a semiconductor substrate, the semiconductor device including: a sensing portion that is provided on the semiconductor substrate and that is configured to detect predetermined physical information; a sensing pad portion that is provided above an upper surface of the semiconductor substrate and that is connected to the sensing portion; a gate runner which is provided above the upper surface of the semiconductor substrate and to which a gate potential is applied; and one or more separated conductive portions in which each separated conductive portion is provided between the sensing pad portion and the semiconductor substrate and that is separated from the gate runner.
    Type: Application
    Filed: August 17, 2022
    Publication date: December 8, 2022
    Inventors: Tohru SHIRAKAWA, Yasunori AGATA, Naoki SAEGUSA, Kaname MITSUZUKA
  • Publication number: 20220320288
    Abstract: A semiconductor device, including, a drift region of a first conductivity type provided on a semiconductor substrate; a field stop region of a first conductivity type provided below the drift region and having one or more peaks; and a collector region of a second conductivity type provided below the field stop region, wherein when an integral concentration of the collector region is set to be x [cm?2], a depth of a first peak that is a shallowest from the back surface of the semiconductor substrate out of the one or more peaks is set to be y1 [?m], line A1: y1=(?7.4699E?01)ln(x)+(2.7810E+01), and line B1: y1=(?4.7772E?01)ln(x)+(1.7960E+01), a depth of the first peak and the integral concentration are within a range between a line A1 and a line B1, is provided.
    Type: Application
    Filed: June 20, 2022
    Publication date: October 6, 2022
    Inventors: Yasunori AGATA, Tohru SHIRAKAWA
  • Publication number: 20220319852
    Abstract: A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.
    Type: Application
    Filed: June 23, 2022
    Publication date: October 6, 2022
    Inventors: Yasunori AGATA, Takahiro TAMURA, Toru AJIKI
  • Publication number: 20220277959
    Abstract: A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.
    Type: Application
    Filed: May 18, 2022
    Publication date: September 1, 2022
    Inventors: Yasunori AGATA, Takashi YOSHIMURA, Hiroshi TAKISHITA, Misaki MEGURO, Naoko KODAMA, Yoshihiro IKURA, Seiji NOGUCHI, Yuichi HARADA, Yosuke SAKURAI
  • Patent number: 11373869
    Abstract: A semiconductor device comprising a semiconductor substrate is provided, wherein the semiconductor substrate has a hydrogen containing region that contains hydrogen, the hydrogen containing region contains helium in at least some region, a hydrogen chemical concentration distribution of the hydrogen containing region in a depth direction has one or more hydrogen concentration trough portions, and in each of the hydrogen concentration trough portions the hydrogen chemical concentration is equal to or higher than 1/10 of an oxygen chemical concentration. In at least one of the hydrogen concentration trough portions, the hydrogen chemical concentration may be equal to or higher than a helium chemical concentration.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: June 28, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yasunori Agata, Takahiro Tamura, Toru Ajiki
  • Patent number: 11342186
    Abstract: A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: May 24, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yasunori Agata, Takashi Yoshimura, Hiroshi Takishita, Misaki Meguro, Naoko Kodama, Yoshihiro Ikura, Seiji Noguchi, Yuichi Harada, Yosuke Sakurai
  • Publication number: 20220149191
    Abstract: Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. Both the transistor portion and the diode portion include a base region of a second conductivity type on a front surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the front surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.
    Type: Application
    Filed: December 27, 2021
    Publication date: May 12, 2022
    Inventors: Tohru SHIRAKAWA, Daisuke OZAKI, Yasunori AGATA
  • Publication number: 20220123108
    Abstract: Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. The diode portion includes a lifetime control region including a lifetime killer. Both the transistor portion and the diode portion include a base region of a second conductivity type on a surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.
    Type: Application
    Filed: December 26, 2021
    Publication date: April 21, 2022
    Inventors: Daisuke OZAKI, Tohru SHIRAKAWA, Yasunori AGATA