Abstract: Provided is a semiconductor device, including a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction is flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface except for a portion where a local hydrogen concentration peak is provided; and a donor concentration of the semiconductor substrate is higher than a bulk donor concentration over an entire region from the upper surface to the lower surface. Hydrogen ions may be irradiated from the upper surface or the lower surface of the semiconductor substrate so as to penetrate the semiconductor substrate in the depth direction.

Abstract: Provided is a semiconductor device comprising an active region and an edge region, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a first collector region of the second conductivity type provided below the drift region in the active region; and a second collector region of the second conductivity type provided below the drift region in the edge region, wherein a doping concentration of the first collector region is higher than a doping concentration of the second collector region, wherein an area of the first collector region is of the same size as an area of the second collector region or larger than the area of the second collector region, in a top plan view.

Abstract: There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.

Abstract: A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.

Abstract: A semiconductor device comprising a semiconductor substrate is provided, wherein the semiconductor substrate has a hydrogen containing region that contains hydrogen, the hydrogen containing region contains helium in at least some region, a hydrogen chemical concentration distribution of the hydrogen containing region in a depth direction has one or more hydrogen concentration trough portions, and in each of the hydrogen concentration trough portions the hydrogen chemical concentration is equal to or higher than 1/10 of an oxygen chemical concentration. In at least one of the hydrogen concentration trough portions, the hydrogen chemical concentration may be equal to or higher than a helium chemical concentration.

Abstract: Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.

Abstract: Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.

Abstract: Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.

Abstract: A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode region of a first conductivity type arranged in the drift region and having an impurity concentration higher than that of the drift region; and a second main electrode region of a second conductivity type arranged in the drift region to be separated from the first main electrode region, wherein the crystal defects contain a first composite defect implemented by a vacancy and oxygen and a second composite defect implemented by carbon and oxygen, and a density of the crystal defects is set so that a peak signal intensity of a level of the first composite defect identified by a deep-level transient spectroscopy measurement is five times or more than a peak signal intensity of a level of the second composite defect.

Abstract: A semiconductor device including a semiconductor substrate having an edge termination portion and an active portion is provided. The edge termination portion includes an outer edge region provided on an end portion of a front surface of the semiconductor substrate and within a predetermined depth range. The active portion includes a well region provided on an inner side relative to the outer edge region of the front surface of the semiconductor substrate and within a predetermined depth range. The semiconductor device further includes an insulating film provided on the front surface of the semiconductor substrate and at least between the outer edge region and the well region and having a taper portion, and a resistive film provided on the insulating film and electrically connected to the outer edge region and the well region. A taper angle of the taper portion of the insulating film is 60 degrees or less.

Abstract: A semiconductor device including a semiconductor substrate having an edge termination portion and an active portion is provided. The edge termination portion includes an outer edge region provided on an end portion of a front surface of the semiconductor substrate and within a predetermined depth range. The active portion includes a well region provided on an inner side relative to the outer edge region of the front surface of the semiconductor substrate and within a predetermined depth range. The semiconductor device further includes an insulating film provided on the front surface of the semiconductor substrate and at least between the outer edge region and the well region and having a taper portion, and a resistive film provided on the insulating film and electrically connected to the outer edge region and the well region. A taper angle of the taper portion of the insulating film is 60 degrees or less.

Abstract: A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode region of a first conductivity type arranged in the drift region and having an impurity concentration higher than that of the drift region; and a second main electrode region of a second conductivity type arranged in the drift region to be separated from the first main electrode region, wherein the crystal defects contain a first composite defect implemented by a vacancy and oxygen and a second composite defect implemented by carbon and oxygen, and a density of the crystal defects is set so that a peak signal intensity of a level of the first composite defect identified by a deep-level transient spectroscopy measurement is five times or more than a peak signal intensity of a level of the second composite defect.

Abstract: In a semiconductor device, an edge termination region which surrounds an active region includes an electric field reduction mechanism including guard rings, first field plates which come into contact with the guard rings, and second field plates which are provided on the first field plates, with an interlayer insulating film interposed therebetween. The second field plate is thicker than the first field plate. A gap between the second field plates is greater than a gap between the first field plates. A barrier metal film is provided between the second field plate and the interlayer insulating film so as come into conductive contact with the second field plate. A gap between the barrier metal films is equal to the gap between the first field plates.

Abstract: In a semiconductor device, an edge termination region which surrounds an active region includes an electric field reduction mechanism including guard rings, first field plates which come into contact with the guard rings, and second field plates which are provided on the first field plates, with an interlayer insulating film interposed therebetween. The second field plate is thicker than the first field plate. A gap between the second field plates is greater than a gap between the first field plates. A barrier metal film is provided between the second field plate and the interlayer insulating film so as come into conductive contact with the second field plate. A gap between the barrier metal films is equal to the gap between the first field plates.