Abstract: A control system includes: a first gateway device including: a virtual switch processor that connects a cloud virtual network to a wide area network and that configures a control virtual network within the cloud virtual network, and a first protocol converter that is connected to the wide area network and that converts communication data received from the cloud virtual network based on a proprietary protocol; and a second gateway device including: a second protocol converter that connects a local control network to the wide area network and that decodes the communication data received via the wide area network and converted by the first gateway device.

Abstract: The present invention provides a base material for cell culture comprising a polyester resin comprising a dicarboxylic acid unit and a diol unit, wherein 1 to 80% by mol of the diol unit is a diol unit having a cyclic acetal structure.

Abstract: The present invention provides a base material for cell culture comprising a polyester resin comprising a dicarboxylic acid unit and a diol unit, wherein 1 to 80% by mol of the diol unit is a diol unit having a cyclic acetal structure.

Abstract: The present invention provides a base material for cell culture comprising a polyester resin comprising a dicarboxylic acid unit and a diol unit, wherein 1 to 100% by mol of the diol units is a diol unit derived from 1,4-cyclohexanedimethanol.

Abstract: According to one embodiment, a light-emitting device includes a ceramic substrate, a plurality of light-emitting elements, and pressure member. The substrate includes a first surface in contact with a thermally radiative member, a second surface positioned in a side opposite to the first surface, and an outer circumferential surface which bridges outer circumferential edges of the first surface and the second surface. The light-emitting elements are mounted on the second surface of the substrate. The pressure member elastically press the substrate toward the thermally radiative member. A gap is provided between the pressure member and the outer circumferential surface of the substrate.

Abstract: A sulfur-containing material in a melt state is stored in material hopper heated to a temperature within a preset temperature range of which a lower limit is equal to or above a melting point of sulfur. The stored sulfur-containing material is sucked by pressure generators and pulled out into cylinders heated to a temperature within the preset temperature range. The pulled out sulfur-containing material is pushed out from the cylinders under pressure applied by the pressure generator, and thereafter, the resultant material is injected into mold heated to a temperature within the preset temperature range. An injection port of the mold after the sulfur-containing material is fully injected is closed. By stopping heating of the mold, the sulfur-containing material is slowly cooled. After that, a modified sulfur concrete substance formed by cooling and solidifying the sulfur-containing material is taken out from the mold.

Abstract: A sulfur-containing material in a melt state is stored in material hopper 1 heated to a temperature within a preset temperature range of which a lower limit is equal to or above a melting point of sulfur. The stored sulfur-containing material is sucked by pressure generators 2a, 2b and pulled out into cylinders 11a, 11b heated to a temperature within the preset temperature range. The pulled out sulfur-containing material is pushed out from the cylinders under predetermined pressure applied by the pressure generator, and thereafter, the resultant material is injected from injection port 24 into mold 5 having therein a cavity which can be hermetically sealed and the mold being heated to a temperature within the preset temperature range. The injection port of the mold after the sulfur-containing material is fully injected in the cavity is closed. By stopping heating of the mold, the sulfur-containing material injected in the cavity is slowly cooled.

Abstract: An average fault ratio is calculated from product characteristics of a product as a target of yield prediction, in order to predict yield accurately in the course of manufacturing the prediction target product. With respect to a reference product, whose wiring pattern is different from the prediction target product but manufactured by the same manufacturing process, a monthly electric fault density is calculated from actually measured data. Respective average fault ratios are obtained from product characteristics of the prediction target product and the reference product. A monthly electric fault density of the prediction target product is obtained by multiplying the monthly electric fault density of the reference product by the ratio of the average fault ratios. The yield is calculated by using the monthly electric fault density of the month in which a yield prediction target lot of the prediction target product was processed.

Abstract: In the present invention, as a sulfur-containing material fully filled into a cavity of a mold body in which the inside of an outer mold having the cavity which can be hermetically sealed is heated to a temperature within a preset temperature range of which a lower limit is equal to or above a melting point of sulfur is cooled and contracted in the cavity, the sulfur-containing material stored in a filling tank in which a cover is attached to an upper end opening of filling tank, so that the inside of filling tank can be hermetically sealed, and also, the inside of filling tank is pressurized to a predetermined pressure, and the inside of filling tank is heated to a temperature within the preset temperature range, is replenished into the cavity by a pressure in filling tank to mold a modified sulfur concrete substance product.

Abstract: According to one embodiment, a light-emitting device includes a ceramic substrate, a plurality of light-emitting elements, and pressure member. The substrate includes a first surface in contact with a thermally radiative member, a second surface positioned in a side opposite to the first surface, and an outer circumferential surface which bridges outer circumferential edges of the first surface and the second surface. The light-emitting elements are mounted on the second surface of the substrate. The pressure member elastically press the substrate toward the thermally radiative member. A gap is provided between the pressure member and the outer circumferential surface of the substrate.

Abstract: A sulfur-containing material in a melt state is stored in material hopper 1 heated to a temperature within a preset temperature range of which a lower limit is equal to or above a melting point of sulfur. The stored sulfur-containing material is sucked by pressure generators 2a, 2b and pulled out into cylinders 11a, 11b heated to a temperature within the preset temperature range. The pulled out sulfur-containing material is pushed out from the cylinders under predetermined pressure applied by the pressure generator, and thereafter, the resultant material is injected from injection port 24 into mold 5 having therein a cavity which can be hermetically sealed and the mold being heated to a temperature within the preset temperature range. The injection port of the mold after the sulfur-containing material is fully injected in the cavity is closed. By stopping heating of the mold, the sulfur-containing material injected in the cavity is slowly cooled.

Abstract: A method for producing a porous potassium carbonate, which comprises calcining potassium hydrogen carbonate crystals having a mean particle diameter of from 100 to 1,000 ?m at a temperature of the object to be calcined of from 100 to 500° C., while introducing a dry gas which has a dew point of not higher than 0° C. and a temperature of from 10 to 50° C.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: An average fault ratio is calculated from product characteristics of a product as a target of yield prediction, in order to predict yield accurately in the course of manufacturing the prediction target product. With respect to a reference product, whose wiring pattern is different from the prediction target product but manufactured by the same manufacturing process, a monthly electric fault density is calculated from actually measured data. Respective average fault ratios are obtained from product characteristics of the prediction target product and the reference product. A monthly electric fault density of the prediction target product is obtained by multiplying the monthly electric fault density of the reference product by the ratio of the average fault ratios. The yield is calculated by using the monthly electric fault density of the month in which a yield prediction target lot of the prediction target product was processed.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.

Abstract: An object of the present invention is to provide a method for inducing differentiation and/or promoting proliferation of regulatory T cells, a method for suppressing the transendothelial cell migration of immunocytes, a method for suppressing immunity using these methods, and a pharmaceutical composition to be used for these methods. Provided are a method for inducing differentiation and/or promoting proliferation of regulatory T cells by causing CD52 agonists, including anti-CD52 antibodies, to act on CD52-expressing T cells, a method for suppressing the transendothelial cell migration of immunocytes, and a method for suppressing immunity using these methods.

Abstract: A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.