Abstract: A negative thermal expansion material including an oxide represented by one of the general formula (1) Cu2-xRxV2-yPyO7 (R includes at least one element selected from Mg, Al, Si, Ti, Cr, Mn, Fe, Co, Ni, Zn, and Sn, wherein 0?x?2, 0<y<2 are met), the general formula (2) Zn2-xTxP2-yAyO7 (T includes at least one element selected from Mg, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Zr, Nb, Mo, Ag, In, Sn, Sb, La, Ta, W, and Bi, A includes at least one element selected from Al, Si, V, Ge, and Sn, wherein O?x<2, 0?y?2 are met except that (x,y)=(0,0) and (0,2) are excluded), and the general formula (3) Ti2-xMxO3 (M includes at least one element selected from Mg, Al, Si, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Ag, In, Sn, Sb, La, Ta, W, and Bi, wherein O?x<2 is met) is provided.

Abstract: An information processing apparatus 4 acquire pieces of image data obtained by capturing an image of a target object to be observed by using a microscope 2 at respective positions of an object lens 21 of the microscope 2 while driving the object lens 21 in a light-axis direction of an illumination with which the target object is irradiated, the image being obtained by condensing light by using the object lens 21, specify a focusing position of the object lens 21 at which a focus of the target object is determined based on the pieces of image data, in a case where the object lens 21 is arranged in the focusing position, acquire, as a reference light receiving pattern, a light receiving pattern obtained by receiving, via the object lens 21, the focus detecting light (reflected light) 228 emitted to the target object via the object lens 21, and store the reference light receiving pattern in a storage.

Abstract: A detection device detects a position of a leading end of a tip for executing an operation on a cell via the leading end, the tip including the leading end in a lower portion thereof. The detection device includes a light source that outputs light in a lateral direction such that the light has a width when viewed along an up-and-down direction, a movement mechanism that moves the tip, and a detector that detects the light output from the light source, wherein the light output from the light source until being detected by the detector includes first light and second light that advance in respective lateral directions that are different from each other, the movement mechanism moves the tip such that a part of the first light and a part of the second light are blocked by the leading end, and the detector detects the first light and the second light whose parts are blocked by the leading end.

Abstract: A negative thermal expansion material according to an embodiment is represented by a general formula (1): Cu2-xRxV2O7 (R is at least one element selected from Zn, Ga, and Fe) and includes an oxide sintered compact whose linear expansion coefficient is ?10 ppm/K or less.

Abstract: A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

Abstract: A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

Abstract: A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

Abstract: One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0?x<1) is formed on the pretreated substrate (11) by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer (14a)

Abstract: A semiconductor light-emitting device which includes: a single-crystal substrate formed with a plurality of projection portions on a c-plane main surface; an intermediate layer which is formed to cover the main surface of the single-crystal substrate, in which a film thickness t2 on the projection portion is smaller than a film thickness t1 on the c-plane surface, in which the film thickness t2 on the projection portion is 60% or more of the film thickness t1 on the c-plane surface, and which includes AlN having a single-crystal phase on the c-plane surface and a polycrystalline phase on the projection portion; and a semiconductor layer which is formed on the intermediate layer and includes a group III nitride semiconductor.

Abstract: A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer (12) made of a Group III nitride compound on a substrate (11), wherein the buffer layer (12) is made of AlN, and a lattice constant of a-axis of the buffer layer (12) is smaller than a lattice constant of a-axis of AlN in a bulk state.

Abstract: One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0?x<1) is formed on the pretreated substrate (11) by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer (14a)

Abstract: The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate 11 using a sputtering method. The apparatus includes: a chamber 41; a target 47 that is arranged in the chamber 41 and includes a group-III element; a first plasma generating means 51 that generates a first plasma for sputtering the target 47 to supply raw material particles to the substrate 11; a second plasma generating means 52 that generates a second plasma including a nitrogen element; and a control means that controls the first plasma generating means 51 and the second plasma generating means 52 to alternately generate the first plasma and the second plasma in the chamber 41.

Abstract: The invention provides a compound semiconductor light-emitting element including: a substrate on which an n-type semiconductor layer (12), a light-emitting layer (13), and a p-type semiconductor layer (14) that are made of a compound semiconductor are stacked in this order; a positive electrode (15) made of a conductive translucent electrode; and a negative electrode (17) made of a conductive electrode, wherein the conductive translucent electrode of the positive electrode (15) is a transparent conductive film containing crystals composed of In2O3 having a hexagonal crystal structure.

Abstract: The object of the present invention is to provide a method of manufacturing a Group-III nitride semiconductor light-emitting device that is highly productive and that enables production of a device having excellent light-emitting properties; a Group-III nitride semiconductor light-emitting device; and a lamp using the light emitting device.

Abstract: A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.

Abstract: A semiconductor light-emitting device which includes: a single-crystal substrate formed with a plurality of projection portions on a c-plane main surface; an intermediate layer which is formed to cover the main surface of the single-crystal substrate, in which a film thickness t2 on the projection portion is smaller than a film thickness t1 on the c-plane surface, in which the film thickness t2 on the projection portion is 60% or more of the film thickness t1 on the c-plane surface, and which includes AlN having a single-crystal phase on the c-plane surface and a polycrystalline phase on the projection portion; and a semiconductor layer which is formed on the intermediate layer and includes a group III nitride semiconductor.

Abstract: A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

Abstract: An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/?m2.

Abstract: A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

Abstract: A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.