Abstract: The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate 11 using a sputtering method. The apparatus includes: a chamber 41; a target 47 that is arranged in the chamber 41 and includes a group-III element; a first plasma generating means 51 that generates a first plasma for sputtering the target 47 to supply raw material particles to the substrate 11; a second plasma generating means 52 that generates a second plasma including a nitrogen element; and a control means that controls the first plasma generating means 51 and the second plasma generating means 52 to alternately generate the first plasma and the second plasma in the chamber 41.

Abstract: An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber.

Abstract: A drug creating screening apparatus characterized in a drug creating screening apparatus including a well plate provided with a plurality of wells and glass brought into contact with a bottom face of the well plate for carrying out drug creating screening based on information of fluorescence emitted by irradiating exciting light to samples mounted between a plurality of the wells and the glass, wherein at least one opening portion for measuring a thickness of the glass is provided at the well plate.

Abstract: An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is disposed and the target is sputtered to generate material particles formed of a material contained in the target; and a second plasma generating region where the substrate is disposed and nitrogen-containing plasma is generated. The first plasma-generating region and the second plasma-generating region are provided inside a chamber, and the first plasma-generating region and the second plasma-generating region are separated by a shielding wall which has an opening part from which the material particles are supplied onto the substrate. Also disclosed are a method of producing a group-III nitride semiconductor layer, a method of producing a group-III nitride semiconductor light-emitting device, and a lamp thereof.

Abstract: A Group III nitride compound semiconductor light-emitting device manufacturing apparatus with a simple structure, which it is capable of easily optimizing the density of a dopant element in the crystals of a Group III nitride compound semiconductor and forming layers with high efficiency using a sputtering method. The manufacturing apparatus includes: a chamber; a Ga target containing a Ga element and a dopant target containing a dopant element, the Ga target and the dopant target being placed within the chamber; and a power application unit that applies power to the Ga target and the dopant target simultaneously or alternately.

Abstract: A focus error detecting optical system has an optical parameter which makes a focus lock-in range by a focus error signal be a value capable of detecting focus on a front surface of a cover glass and focus on aback surface thereof separately. A control section, based on the focus error signal obtained by the focus error detecting optical system, brings a focal point of an observational optical system to a focus position. Further, focus error detecting optical systems include optical units each having an optical parameter corresponding to a numerical aperture of respective objective lenses. A control section selects the optical unit of the focus error detecting optical system corresponding to the objective lens in use. The control section, using a focus error signal obtained by the selected focus error detecting optical system, brings a focal point of an observational optical system to a focus position.

Abstract: The invention provide a method for producing a fluoroalcohol of the following formula (1): H(CFR1CF2)nCH2OH  (1) (wherein R1 represents F or CF3, when n=1; R1 represents F, when n=2) comprising reacting methanol with tetrafluoroethylene or hexafluoropropylene in the presence of a free radical source, wherein the reaction mixture is subjected to distillation either in the presence of a base or after contact of said reaction mixture with a base.

Abstract: A shower head 10 is disposed inside the process chamber 2 of a plasma CVD apparatus 1. The shower head 10 has a plurality of gas introduction holes 11, and a process gas is supplied via these gas introduction holes 11 to a wafer W which is disposed on a pedestal 5. A rough surface portion B that has been subjected to a bead blasting treatment is formed over the entire surface of the shower head 10 that faces the pedestal 5. As a result, the area of the surface of the shower head 10 that faces the pedestal 5 is increased, so that a uniform high-density plasma is generated inside the process chamber 2.