Abstract: Provided are a composite material excellent in plastic workability, a method of producing the composite material, a heat-radiating board of a semiconductor equipment, and a semiconductor equipment to which this heat-radiating board is applied. This composite material comprises a metal and an inorganic compound formed to have a dendritic shape or a bar shape. In particular, this composite material is a copper composite material, which comprises 10 to 55 vol. % cuprous oxide (Cu2O) and the balance of copper (Cu) and incidental impurities and has a coefficient of thermal expansion in a temperature range from a room temperature to 300° C. of from 5×10−6 to 17×10−6/° C. and a thermal conductivity of 100 to 380 W/m·k. This composite material can be produced by a process comprising the steps of melting, casting and working and is applied to a heat-radiating board of a semiconductor article.

Abstract: It is an object of the present invention to provide a composite material having low thermal expansivity, high thermal conductivity, and good plastic workability, which is applied to semiconductor devices and many other uses.

Abstract: It is an object of the present invention to provide a composite material having low thermal expansivity, high thermal conductivity, and good plastic workability, which is applied to semiconductor devices and many other uses.

Abstract: To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 &mgr;m or larger exists in an interface formed by the composite metal plate and the metal layer.

Abstract: A soft hexagonal ferrite sintered material includes crystal particles of M-type hexagonal ferrite corresponding to a general chemical formula MFe12O19 wherein M is at least one element selected from the group consisting of Ba, Sr and Pb. Crystal particles having particle diameters of 5 &mgr;m to 100 &mgr;m are extracted from a sintered material produced from a precursor powder mixture. The extracted particles as seed crystals are mixed with a calcined powder comprising fine crystals having the above composition and particle diameters of 0.5 &mgr;m to 3 &mgr;m, then is sintered until the intended particle growth of the crystal particles in the sintered material is achieved to give an average particle diameter of 30 &mgr;m to 500 &mgr;m.

Abstract: In a finishing apparatus, a plurality of works are retained at distances from each other in a direction of an X-axis. A single spindle is disposed on a table movable in the direction of the X-axis, the spindle has an axis parallel to an axis of each of bores to be finished, and is capable of being advanced and retracted axially. A measuring device is provided that measures an inside diameter of each finished bore and which is advanced and retracted independently from the spindle in a direction along the axis of each finished bore. A combination tool is mounted at a tip end of the spindle and finishes an inner surface of any of the bores to be finished, even if the position of insertion of the combination tool into each of the bores is changed.

Abstract: A semiconductor power element heat dissipation board is provided having a high bonding strength without voids in the bonding portion, and high reliability without forming a thick brittle Al/Cu intermetallic chemical compound. The manufacturing method is simple.

Abstract: To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 &mgr;m or larger exists in an interface formed by the composite metal plate and the metal layer.

Abstract: Provided are a composite material excellent in plastic workability, a method of producing the composite material, a heat-radiating board of a semiconductor equipment, and a semiconductor equipment to which this heat-radiating board is applied.

Abstract: Provided are a composite material excellent in plastic workability, a method of producing the composite material, a heat-radiating board of a semiconductor equipment, and a semiconductor equipment to which this heat-radiating board is applied.

Abstract: An object of the present invention is to provide a semiconductor power element heat dissipation board which has a high bonding strength without voids in the bonding portion, and has high reliability without forming a thick brittle Al/Cu intermetallic chemical compound, and of which the manufacturing method is simple, and to provide a conductor plate and a heat sink plate and a solder used for the semiconductor power element heat dissipation board, and to provide a power module and a composite plate using the semiconductor power element heat dissipation board.

Abstract: In the hydrogen supply device for producing and supplying hydrogen to a fuel cell, a heat exchange section has a rotary thermal storage through which low and high temperature passages pass. Reforming material is supplied to the low temperature fluid passage on an upstream side of the heat exchange section. A reforming section for producing reformed gas containing hydrogen is located at a downstream side of the low temperature fluid passage. A combustion gas supply section for generating and supplying a combustion gas is located in the high temperature fluid passage. The rotary thermal storage rotates to move alternately between the low and high temperature fluid passages so that heat of the combustion gas flowing in the high temperature fluid conduit is transferred to reforming material flowing in the low temperature fluid conduit. The low temperature fluid passage communicates with the high temperature fluid passage via the fuel cell.

Abstract: In the hydrogen supply device for producing and supplying hydrogen to a fuel cell, a reforming section has a rotary thermal storage through which low and high temperature passages pass. Reforming material is supplied to the low temperature fluid passage on an upstream side of the first rotary thermal storage. A combustion gas supply section for generating and supplying a combustion gas is located in the high temperature fluid passage on a downstream side of the first rotary thermal storage. With the hydrogen supply device mentioned above, the first rotary thermal storage rotates to move alternately between the low and high temperature fluid passages so that, in the reforming section, the reforming material flowing in the low temperature fluid passage is catalytically reformed to a reformed gas containing hydrogen upon receiving combustion heat of the combustion gas flowing in the high temperature fluid conduit.

Abstract: A novel process for the preparation of benzonitrile compounds useful for herbicides or their intermediates is provided. A process for the preparation of compounds of the formula (1), characterized in comprising reacting a compound of the formula (1a) with one or more cyanides selected from potassium cyanide, sodium cyanide and zinc cyanide in the presence of a metallic catalyst. In the scheme, X is hydrogen, fluorine or chlorine atom; Z is nitro, amino or C1-C4 alkylsulfonylamino group or the like; Y is fluorine, chlorine or bromine atom or the like; and Q is hydrogen atom, or nitro or amino group or the like.

Abstract: According to the present invention, a catalyst combustion apparatus includes a ring-shaped catalyst body for catalytically burning the mixture of the fuel and the air, which is disposed in a combustion cylinder. In the combustion cylinder, a fuel nozzle and an inlet for the air are disposed at one end side of the catalyst body, and the premixing chamber is formed at the other end side. The fuel and the air are supplied from one end side of the catalyst body through a through-hole formed at a center portion of the catalyst body and is mixed in the premixing chamber. In the premixing chamber, a flow direction of the mixture is turned toward the catalyst body. A part of the exhaust gas is introduced into the air at one end side. In this way, it is possible to simplify and downsize the combustion apparatus, while securing the preheating effect of the air by the circulation of the exhaust gas.

Abstract: In order to provide an austenitic single crystal stainless steel having preferable stress corrosion cracking resistance, strength, and irradiation induced embrittlement resistance so as to extend the life of a nuclear reactor core structure, which is used under a high radiation dose environment, a method is employed, which comprises the steps of homogeneously dispersing carbides into a parent phase of the austenitic single crystal stainless steel by a two step solution heat treatment, and subsequently effecting an ageing heat treatment after rapid cooling for precipitating fine carbides. Austenitic single crystal stainless steel having preferable stress corrosion cracking resistance, strength, and irradiation induced embrittlement resistance can be provided, and the life of nuclear reactor core structure, which is used under a high radiation dose environment, can be extended.

Abstract: A semiconductor device has change-over circuits respectively connected between data buses and a plurality of data pins, and one of the change-over circuits changes a signal path between a defective signal line to associated data pin to another signal path between a non-defective signal line the associated data pin so as to allow a common test program sequence to check the semiconductor device whether to be an excellent product or a partially defective product.

Abstract: In order to provide an austenitic single crystal stainless steel having preferable stress corrosion cracking resistance, strength, and irradiation induced embrittlement resistance so as to extend the life of a nuclear reactor core structure, which is used under a high radiation dose environment, a method is employed, which comprises the steps of homogeneously dispersing carbides into a parent phase of the austenitic single crystal stainless steel by a two step solution heat treatment, and subsequently effecting an ageing heat treatment after rapid cooling for precipitating fine carbides. Austenitic single crystal stainless steel having preferable stress corrosion cracking resistance, strength, and irradiation induced embrittlement resistance can be provided, and the life of nuclear reactor core structure, which is used under a high radiation dose environment, can be extended.

Abstract: Novel pyrimidine derivatives of the formula (I): ##STR1## wherein R1 is a C.sub.1 -C.sub.6 haloalkyl group, a C.sub.1 -C.sub.6 alkyl group, a C.sub.3 -C.sub.6 cycloalkyl group or the like, R2 is a hydrogen atom, a C.sub.1 -C.sub.6 alkyl group, a C.sub.3 -C.sub.6 cycloalkyl group or the like, and X is a carbonyl group or --C(R3)OH (wherein R3 is a hydrogen atom, a C.sub.1 -C.sub.6 alkyl group or the like).

Abstract: To prevent a thermal medium from assuming a superheated state and to stably supply hot air for warming in an apparatus which performs warming by a combustion heater. A hot-water recirculation path connecting a hot-water heater core, water pump, cooler for a motor for running use and an inverter device, first switching valve, and combustion heater in a closed loop is provided. A temperature sensor is disposed at an intermediate location in the hot-water recirculation path. A heat-radiating passage having a second switching valve and radiator is connected to the hot-water recirculation path. During heating operation, an ECU closes the second switching valve and switches off a radiator fan when a detected temperature of the first temperature sensor is less than a set temperature for radiating heat, and opens the second switching valve and switches off the radiator fan when the detected temperature of the first temperature sensor is the set temperature for radiating heat or more.