Abstract: An object of the present invention is to provide a metal polishing composition which can polish a metal such as Cu and Ta at a high speed, has a higher efficiency of washing for a hydrophobic low dielectric constant film, and is excellent stability without precipitation of a polishing particle during storage (excellent in stability for storing). The object is achieved by a metal polishing composition comprising an anionic surfactant having 2 or more anionic functional groups in a molecule, a polishing abrasive, an inorganic salt, and water.

Abstract: There is provided a metal abrasive composition which can polish metal wiring at high speed and control the etching rate thereof in manufacturing a semiconductor device. A metal abrasive composition comprises (a) a chelating resin particle having at least one functional group selected from the group consisting of an aminocarboxylic acid group, an aminophosphonic acid group and an iminodiacetic acid group, (b) an inorganic particle, and (c) a surfactant having at least one functional group selected from a group consisting of a carboxylic acid group, a sulfonic acid group and a phosphoric acid group.

Abstract: A metal polish composition comprising a chelate resin particle and an inorganic particle and a polishing method of a metal with said metal polish composition.