Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: The present invention relates to a method for connecting electrodes comprising: interposing the polyphthalide represented by the formula (I): wherein R represents a divalent aromatic hydrocarbon group or a divalent heteroring-containing aromatic group, R1 represents an alkyl group, a fluorinated alkyl group, an alkoxy group or a halogen atom, where the number of R1 is 0 to 4, X represents O or N—R3, provided that R3 represents one of the following groups, Y represents SO2 or Co and n represents a number of repeating units in the polymer, as a pressure-sensitive conductive polymer at least partially between electrodes opposed to each other; and applying a pressure to fix the both electrodes, a surface-treated wiring board comprising polyphthalide represented by the formula (I) formed on at least part of the surface of the electrode part, an adhesive film comprising an adhesive and polyphthalide represented by the formula (I), and an electrode-connected structure using the same.

Abstract: The present invention relates to a method for connecting electrodes comprising: interposing the polyphthalide represented by the formula (I): wherein R represents a divalent aromatic hydrocarbon group or a divalent heteroring-containing aromatic group, R1 represents an alkyl group, a fluorinated alkyl group, an alkoxy group or a halogen atom, where the number of R1 is 0 to 4, X represents O or N—R3, provided that R3 represents one of the following groups, Y represents SO2 or Co and n represents a number of repeating units in the polymer, as a pressure-sensitive conductive polymer at least partially between electrodes opposed to each other; and applying a pressure to fix the both electrodes, a surface-treated wiring board comprising polyphthalide represented by the formula (I) formed on at least part of the surface of the electrode part, an adhesive film comprising an adhesive and polyphthalide represented by the formula (I), and an electrode-connected structure using the same.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250 ° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: An adhesive film including a reactive adhesive capable of curing by heating or light irradiation and a polyphthalide represented by the formula I: wherein R represents a divalent aromatic hydrocarbon group or a divalent heteroring-containing aromatic group, R1 represents an alkyl group, a Fluorinated alkyl group, an alkoxy group or a halogen atom, where the number of R1 is 0 to 4, X represents O or N—R3, provided that R3 represents one of the following groups, Y represents SO2 or CO and n represents a number of repeating units in the polymer. The adhesive film can be used to connect, e.g., electrodes of a semiconductor chip to electrodes of a wiring board. The polyphthalide can be used to surface-treat, e.g., electrodes of a wiring board.

Abstract: The present invention relates to a method for connecting electrodes comprising: interposing the polyphthalide represented by the formula (I): wherein R represents a divalent aromatic hydrocarbon group or a divalent heteroring-containing aromatic group, R1 represents an alkyl group, a fluorinated alkyl group, an alkoxy group or a halogen atom, where the number of R1 is 0 to 4, X represents O or N—R3, provided that R3 represents one of the following groups, Y represents SO2 or Co and n represents a number of repeating units in the polymer, as a pressure-sensitive conductive polymer at least partially between electrodes opposed to each other; and applying a pressure to fix the both electrodes, a surface-treated wiring board comprising polyphthalide represented by the formula (I) formed on at least part of the surface of the electrode part, an adhesive film comprising an adhesive and polyphthalide represented by the formula (I), and an electrode-connected structure using the same.

Abstract: The present invention relates to a method for connecting electrodes comprising: interposing the polyphthalide represented by the formula (I): wherein R represents a divalent aromatic hydrocarbon group or a divalent heteroring-containing aromatic group, R1 represents an alkyl group, a fluorinated alkyl group, an alkoxy group or a halogen atom, where the number of R1 is 0 to 4, X represents O or N—R3, provided that R3 represents one of the following groups, Y represents SO2 or Co and n represents a number of repeating units in the polymer, as a pressure-sensitive conductive polymer at least partially between electrodes opposed to each other; and applying a pressure to fix the both electrodes, a surface-treated wiring board comprising polyphthalide represented by the formula (I) formed on at least part of the surface of the electrode part, an adhesive film comprising an adhesive and polyphthalide represented by the formula (I), and an electrode-connected structure using the same.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250 ° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: Provided are a laminating method and machine for successively heating and compression-bonding a film-shaped organic die-bonding material on a leadframe. leadframe 7 is placed on a travelling table 8 and is heated there. A film-shaped organic die-bonding material 2 is punched out and the resulting film is tack-bonded to a die pad on the leadframe. The leadframe with the film tack-bonded thereon is then moved to a position B by the travelling table. After the film is pressed by a compression-bonding element at the position B, a chip is mounted on the film-shaped organic die-bonding material 2. It is therefore possible to bond a film-shaped organic die-bonding material under compression on a leadframe with good productivity but without voids and further to avoid package cracking upon mounting a chip.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 Mpa or less at a temperature of 259° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: The present invention relates to a method for connecting electrodes comprising: interposing the polyphthalide represented by the formula (I): 1

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Abstract: A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.