Abstract: An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.

Abstract: An imaging device including a first filter that passes a first light and a second light; a second filter that blocks the second light; photoelectric converters that have sensitivity to the first light and the second light; and a processor, in which one of the photoelectric converters detects a light passing through the first filter to generate a first signal, one of the photoelectric converters detects a light passing through the first filter and the second filter to generate a second signal, and the processor performs the second light sensing based on the first signal and the second signal.

Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 ?m or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 ?m or longer and shorter than 1.1 ?m is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 ?m or longer.

Abstract: An imaging device includes: a photoelectric converter whose sensitivity changes depending on a value of a voltage to be applied; and a voltage supply circuit that alternately supplies a first voltage and a second voltage, which is different from the first voltage, to the photoelectric converter, in which in a first frame period, a length of a first period from a first point in time at which the first voltage is switched to the second voltage until a second point in time at which the first voltage is switched to the second voltage subsequently to the first point in time differs from a length of a second period from the second point in time until a third point in time at which the first voltage is switched to the second voltage subsequently to the second point in time.

Abstract: A camera system including an imaging device that captures a first image by a normal exposure including only one exposure and that captures a second image by a multiple exposure including a plurality of exposures; and a control circuit. The the imaging device captures the second image in a first frame period, and the control circuit determines, based on the second image captured in the first frame period, whether to capture an image by the normal exposure or capture an image by the multiple exposure in a second frame period following the first frame period.

Abstract: An imaging device having an imager that includes first pixels having sensitivity to a first light and second pixels having sensitivity to a second light, a wavelength of the first light being different from a wavelength of the second light. The imager being configured to acquire first image data from the first pixels and being configured to acquire second image data from the second pixels. Each of the first image data and the second image data including an image of a code, the code being configured to output the second light. The imaging device further including an image processor configured to extract an image of the code based on the first image data and the second image data.

Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in one frame. During the first period, pixel signal readout is performed on at least one first row in the pixel array PA. During the second period, pixel signal readout is performed on at least one second row in the pixel array PA. At least one of the at least one first row or the at least one second row includes two rows in the pixel array PA. During the third period, no pixel signal readout is performed on the rows in the pixel array PA. Each of the first period and the second period is one of the high-sensitivity exposure period and the low-sensitivity exposure period. The third period is the other of the high-sensitivity exposure period and the low-sensitivity exposure period.

Abstract: An imaging device including a photoelectric converter that converts incident light into an electric charge; a transfer transistor; a first node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the first node; a second signal detection transistor having a gate coupled to the photoelectric converter; a signal line coupled to one of a source and a drain of the first signal detection transistor; a first transistor coupled to the first node; and a second transistor coupled to the photoelectric converter, wherein one of the source and the drain of the first signal detection transistor is coupled to the first transistor, one of a source and a drain of the second signal detection transistor is coupled to the second transistor, and no transistor is coupled between the photoelectric converter and the gate of the second signal detection transistor.

Abstract: An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

Abstract: An imaging system includes a first illuminator that emits light whose intensity varies with time; and a first imaging device that comprises a first imaging cell; and a first bias control line. The first imaging cell includes a first electrode, a second electrode electrically connected to the first bias control line, and a photoelectric conversion layer sandwiched between the first electrode and the second electrode. During a first period from a reset of the first imaging cell until a readout of signal charge accumulated in the first imaging cell, the first bias control line supplies to the second electrode a first bias control signal. The first bias control signal is synchronized with the intensity of the light varying with time.

Abstract: An imaging device includes: a plurality of pixels arrayed in a matrix, the plurality of pixels respectively including photoelectric converters that convert light into signal charge and charge accumulators that accumulate the signal charge; and a control circuit. The control circuit causes pixels included in the plurality of pixels and belonging to at least one row to sequentially perform, for each row or for two or more rows at a time, a reset operation for initializing potentials of the charge accumulators, before receiving a trigger signal for giving an instruction for starting exposure, and causes, after receiving the trigger signal, the plurality of pixels to simultaneously perform an exposure operation for accumulating the signal charge in the charge accumulators without causing the pixels included in the plurality of pixels and belonging to at least one row to perform the reset operation.

Abstract: An image recognition apparatus includes a processing circuit and a control circuit. The processing circuit receives a first image obtained by performing multiple-exposure image capturing of a first subject. The processing circuit uses the first image to calculate a recognition accuracy of the first subject. The control circuit changes a condition of the multiple-exposure image capturing in a case where the recognition accuracy is lower than a recognition accuracy threshold.

Abstract: An imaging device including a pixel that includes: a photoelectric converter that converts light into a charge; a charge accumulation region to which the charge is input; and an amplifier transistor that includes a gate electrically connected to the charge accumulation region. The amplifier transistor being configured to output a signal that corresponds to a potential of the charge accumulation region. The imaging device further including a detection circuit that is configured to detect a level of the signal from the amplifier transistor, wherein a sensitivity of the pixel is caused to be increased, in a case where the level detected by the detection circuit is greater than a first threshold value.

Abstract: An imaging device including a pixel, and a controller that sets a sensitivity of the pixel according to an external signal, where the external signal includes sound, vibration or inclination.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry; and a controller that derives a duty cycle corresponding to an attenuation ratio set for a first frame and that causes the voltage application circuitry to apply a pulse voltage having the duty cycle between the first electrode and the second electrode in the first frame.

Abstract: An imaging device includes a pixel. The pixel includes: a first electrode; a second electrode facing the first electrode; a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting light into signal charge; and a charge accumulation region coupled to the second electrode, the charge accumulation region accumulating the signal charge. The pixel captures first data in a first exposure period and captures second data in a second exposure period different from the first exposure period, the first exposure period and the second exposure period being included in a frame period. A length of the first exposure period is different from a length of the second exposure period. The imaging device generates multiple-exposure image data including at least the first data and the second data.

Abstract: An imaging device including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a voltage supply circuit that applies a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor being configured to output a signal that corresponds to a potential of the gate; and a detection circuit that is configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range, in a case where the level detected by the detection circuit is less than a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range, in a case where the level detected by the detection circuit is greater than a second threshold value.

Abstract: An imaging device includes a pixel including a permittivity modulation element that includes opposite and pixel electrodes and a permittivity modulation structure whose permittivity changes according to the radiation of light, a capacitive element that includes first and second electrodes, and a detection circuit that outputs a signal corresponding to the potential of the pixel electrode. Also provided are a voltage supply circuit that applies first and second voltages in different first and second periods to one of the opposite electrode and the first electrode, and a signal processing circuit that generates a third signal being a difference between a first signal output from the detection circuit in the first period and a second signal output from the detection circuit in the second period. The potential difference between the opposite electrode and the first electrode when the second voltage is applied is less than when the first voltage is applied.

Abstract: In an imaging device, a first digital signal corresponding to a first analog signal read out from a pixel, and a second digital signal corresponding to the amount of charge accumulated during a first exposure period following a period for reading the first analog signal. A difference is acquired between a first difference and a second difference wherein the first difference is a difference between a third digital signal and the second digital signal, the third digital signal is a digital signal corresponding to the amount of charge cumulatively accumulated during the first exposure period and a following second exposure period, and the second difference is a difference between the second digital signal and the first digital signal. At least one of the first exposure period or the second exposure period includes a period during which the first light source is in the on-state.

Abstract: An imaging device includes multiple pixels, a first analog-to-digital (AD) converter and a second AD converter that receive analog signals read from the pixels and output digital signals the analog signals, a first frame memory, and an image processor. The analog signals include a reset signal representing a reset level and a pixel signal representing an image of a subject. The first frame memory temporarily stores a first digital signal that is one of the digital signals, corresponding to the reset signal, output from the first AD converter and the second AD converter. The image processor outputs a difference between the first digital signal stored on the first frame memory and a second digital signal that is another one of the digital signals, corresponding to the pixel signal on pixels from which the reset signal is read, output from the first AD converter and the second AD converter.