Abstract: A drive system of an electrically driven dump truck is capable of achieving an operational feeling in which the operation amount of the accelerator pedal is well balanced with the output horsepower of the electric motors, particularly at the time of slow traveling. To achieve this, the target motor output horsepower Pm0 corresponding to the operation amount of an accelerator pedal 1 is calculated. The target motor torque Tr1R, Tr1L is calculated on the basis of the target motor output horsepower Pm0 and the rotational speed ?R, ?L of electric motors 12R, 12L respectively. The acceleration torque limit values of the electric motors 12R, 12L corresponding to the operation amount of the accelerator pedal 1 are calculated, respectively. Then, smaller values are selected, as motor torque instruction values TrR, TrL, between the acceleration torque limit value and the target motor torque Tr1R, Tr1L to control inverters 73R, 73L, respectively.

Abstract: The present invention provides a semiconductor device which comprises a terminal pad (120) formed on an underlying base (105), solder (240), and a reactive product (260) comprising a component of the terminal pad and a Zn system material (230), which is formed between the terminal pad and the solder.

Abstract: A junction structure, and a semiconductor device including the same, for a junction of a terminal pad and solder, including an underlying base on which said terminal pad is formed; a nickel layer disposed on the terminal pad; a palladium layer or a gold layer disposed on the nickel layer; the solder; and a zinc system material layer provided between the palladium layer or the gold layer and the solder. The terminal pad and the solder may be provided in a semiconductor device in which the terminal pad lies inside the semiconductor device, and the zinc system material layer is formed between the terminal pad and the solder. The terminal pad may be provided over a substrate, the solder may be provided in the semiconductor device, and the zinc system material layer is then formed between the terminal pad of the substrate and the solder of the semiconductor device.

Abstract: A semiconductor device capable mounting semiconductor elements having different functions without increasing the area of the semiconductor device, and its manufacturing method are presented. A part if wiring 104 is formed al so at the side surface of a semiconducter element 101, and bump electrodes 102 formed so as to be nearly on a same plane as the wiring 104 formed at the side surface of the semiconducter element 101, at least a part of ball electrodes 103 is formed so as to connect electrically to the wiring 104 at the side surface of the semiconductor element, the side surface of the semiconductor element is sealed with resin exposing the wiring 104, and the confronting surface of the circuit forming surface is sealed with resin.

Abstract: A secondary cleaning device has a cleaning brush, collection roller, and controller. The cleaning brush is driven by a drive mechanism and thereby rotates in a state that brush fibers thereof are contacting with a secondary transfer belt to collect toner on the secondary transfer belt. The collection roller is driven by another drive mechanism and thereby rotates in a state contacting with the cleaning brush to collect toner from the cleaning brush. The collection roller rotates in such a manner that the collection roller and the cleaning brush move in the same direction with each other at a contact area between the collection roller and the cleaning brush. The controller controls the drive mechanism such that the circumferential speed ratio of the collection roller with respect to the cleaning brush is greater than one and smaller than two.

Abstract: A semiconductor device includes a silicon substrate having first and second surfaces, in which a wiring pattern is formed on the first surface; a first resin layer formed over the first surface of the silicon substrate; and a second resin layer formed over the second surface of the silicon substrate. The silicon substrate has a thickness less than 150 ?m, and each of the first and second resin layers has a thickness larger than that of the silicon substrate.

Abstract: A grinding machine for grinding a workpiece, including a chucking table having a chucking area and a grinder head. The grinder head includes a spinning disk rotating about a rotation axis and a plurality of grindstones, which are circularly arranged on a surface of the spinning disk, whereby a slit is created between the adjacent grindstones, wherein both of the adjacent grindstones is arranged to make contact with an edge of the workpiece while grinding the workpiece.

Abstract: A resin sealed semiconductor device includes a semiconductor chip having a main surface, a plurality of surface electrodes formed on the main surface of the chip, a plurality of projection electrodes formed the main surface, each projection electrode being connected to respective one surface electrodes, and a resin shield covering the main surface, the surface electrodes and side surfaces of the projection electrodes, the resin having a thermal expansion coefficient in the range of 8-10 ppm/° C. and a Young's modulus in the range of 1.8-2.0 Gpa.

Abstract: A semiconductor apparatus includes a semiconductor device to be mounted on a circuit board; a plurality of conductive posts electrically connected to the semiconductor device; and a plurality of conductive bumps each provided on an outer end of each of the conductive posts, so that the plurality of conductive bump is soldered onto the circuit board when the semiconductor device is mounted on the circuit board. A distance between a peripheral edge of the semiconductor device and an outer edge of the conductive post is determined to be narrow so that a solderbility or wetting condition of the conductive bumps can be visibly recognized easily.

Abstract: An electronic file conversion program that causes a computer to perform a function including: converting a description format of an electronic file stored in a memory; detecting, from the memory, an electronic file of which description format is to be converted; and controlling to store in the memory, the electronic file of which description format is converted.

Abstract: A semiconductor pellet is mounted on a circuit board. The pellet has a first terminal pad and a first solder layer formed on the first terminal pad. The circuit board has a second terminal pad and a second solder layer formed on the second terminal pad. A metal ball is positioned between the first and the second solder layers such that when the solder layers are reflowed, an intermetallic compound is formed between the metal ball and the first terminal pad and between the ball and the second terminal pad, the intermetallic compound including a thickness not more than 10 ?m in areas in which said metal ball is closest to the second terminal pad and to the first terminal. The metal ball has a surface neither in contact with the first solder layer nor the second solder layer.

Abstract: A semiconductor apparatus includes a semiconductor device to be mounted on a circuit board; a plurality of conductive posts electrically connected to the semiconductor device; and a plurality of conductive bumps each provided on an outer end of each of the conductive posts, so that the plurality of conductive bump is soldered onto the circuit board when the semiconductor device is mounted on the circuit board. A distance between a peripheral edge of the semiconductor device and an outer edge of the conductive post is determined to be narrow so that a solderbility or wetting condition of the conductive bumps can be visibly recognized easily.

Abstract: A method of producing a semiconductor device includes the steps of forming a protrusion electrode on a semiconductor chip; and sealing the protrusion electrode and a semiconductor substrate with a resin layer. The method further includes the steps of polishing the resin layer until an upper surface of the protrusion electrode is exposed; polishing the exposed upper surface of the protrusion electrode; and forming a solder terminal on the polished upper surface of the protrusion electrode.

Abstract: A method is used for manufacturing a semiconductor device including a circuit-fabricated side on which an encapsulation layer is formed. The method includes the following steps. A semiconductor wafer is placed on the suction surface of a suction stage, the suction surface having a diameter in the range of 99 to 100.5% of a diameter of the semiconductor wafer. The semiconductor wafer is held on the suction surface of the suction stage by suction. A back surface of the semiconductor wafer is ground. The back surface of the semiconductor wafer is ground such that a surface roughness of the ground back surface is not greater than 5 nm. The encapsulation layer has a flexural modulus not smaller than 12 Gpa and not larger than 18 Gpa.

Abstract: A resin composite copper foil comprising a copper foil and a resin layer containing a block copolymer polyimide and a maleimide compound, the resin layer being formed on one surface of the copper foil, a production process thereof, a copper-clad laminate using the resin composite copper foil, a production process of a printed wiring board using the copper-clad laminate, and a printed wiring board obtained by the above process.

Abstract: The present invention provides a semiconductor device which comprises a terminal pad (120) formed on an underlying base (105), solder (240), and a reactive product (260) comprising a component of the terminal pad and a Zn system material (230), which is formed between the terminal pad and the solder.

Abstract: A semiconductor device includes a silicon substrate having first and second surfaces, in which a wiring pattern is formed on the first surface; a first resin layer formed over the first surface of the silicon substrate; and a second resin layer formed over the second surface of the silicon substrate. The silicon substrate has a thickness less than 150 ?m, and each of the first and second resin layers has a thickness larger than that of the silicon substrate.

Abstract: A clamp device for mounting elongated components such as pipes on a support such as a car body comprises a first clamp to be mounted on the support and a second clamp to be mounted in a recess in the first clamp. The clamp device is constructed to permit limited transverse movement of the second clamp in the recess, to accommodate bending or curving of elongated components held by the second clamp. The first clamp may also hold elongated components.

Abstract: An insulating film is formed on a substrate selected from a group containing a BT resin substrate and an epoxy resin substrate. Copper wirings and copper posts including wirings are formed on the insulating film. Plasma processing is effected on exposed surfaces of the insulating film, copper wirings and copper posts provided over the semiconductor substrate, using nitrogen-type gas. An encapsulating portion is formed which covers and seals the exposed surfaces.

Abstract: Process for producing a high-density printed wiring board, comprising: providing an ultrathin-copper-foil-clad board having a hole and outermost copper foil thickness of 5 ?m or less, plating the surface by electroless copper plating to form a layer of 0.1 to 1 ?m thickness, forming an electrolytic copper plating layer of 0.5 to 3 ?m thickness using the electroless copper plating layer as electrode, forming a plating resist layer on a portion of the copper plating layer, forming a pattern copper plating layer of 6 to 30 ?m thickness on the copper surface in where the plating resist layer is not formed, by electrolytic plating, removing the plating resist layer, and etching the entire surface to remove the thin electrolytic copper layer, the electroless copper layer and ultrathin copper foil layer at least where the pattern copper plating layer is not formed.