Patents by Inventor Yasushi Koubuchi
Yasushi Koubuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050026405Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element-isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.Type: ApplicationFiled: August 26, 2004Publication date: February 3, 2005Inventors: Yasushi Koubuchi, Koichi Nagasawa, Masahiro Moniwa, Youhei Yamada, Toshifumi Takeda
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Publication number: 20040012093Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element-isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.Type: ApplicationFiled: July 14, 2003Publication date: January 22, 2004Inventors: Yasushi Koubuchi, Koichi Nagasawa, Masahiro Moniwa, Youhei Yamada, Toshifumi Takeda
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Patent number: 6664642Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.Type: GrantFiled: February 15, 2002Date of Patent: December 16, 2003Assignee: Hitachi, Ltd.Inventors: Yasushi Koubuchi, Koichi Nagasawa, Masahiro Moniwa, Youhei Yamada, Toshifumi Takeda
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Patent number: 6433438Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.Type: GrantFiled: May 2, 2001Date of Patent: August 13, 2002Assignee: Hitachi, Ltd.Inventors: Yasushi Koubuchi, Koichi Nagasawa, Masahiro Moniwa, Youhei Yamada, Toshifumi Takeda
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Publication number: 20020074611Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.Type: ApplicationFiled: February 15, 2002Publication date: June 20, 2002Inventors: Yasushi Koubuchi, Koichi Nagasawa, Masahiro Moniwa, Youhei Yamada, Toshifumi Takeda
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Publication number: 20010022399Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.Type: ApplicationFiled: May 2, 2001Publication date: September 20, 2001Inventors: Yasushi Koubuchi, Koichi Nagasawa, Masahiro Moniwa, Youhei Yamada, Toshifumi Takeda
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Patent number: 6261883Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.Type: GrantFiled: March 31, 1998Date of Patent: July 17, 2001Assignee: Hitachi, Ltd.Inventors: Yasushi Koubuchi, Koichi Nagasawa, Masahiro Moniwa, Youhei Yamada, Toshifumi Takeda
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Patent number: 5175608Abstract: A thin film forming method and apparatus, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make Ar ions flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to maintain a stable discharge and perform reverse sputter in a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. An aluminum wiring film whose peak value of x-ray diffraction strength at a (111) plane is 150 Kcps or more is possible.Type: GrantFiled: August 30, 1990Date of Patent: December 29, 1992Assignee: Hitachi, Ltd.Inventors: Masayasu Nihei, Jin Onuki, Yasushi Koubuchi, Kunio Miyazaki, Tatsuo Itagaki
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Patent number: 5051812Abstract: A semiconductor device having a high reliability wiring conductor structure applicable to DRAMs and SRAMs.The semiconductor device of the present invention is characterized by comprising a first wiring conductor film wherein a specific resistance is 5.about.15.mu..OMEGA.cm and an allowable current density is 1.times.10.sup.6 .about.1.times.10.sup.8 A/cm.sup.2 ; a second wiring conductor film having a laminated layer structure formed of a layer of high fusing point and low resistance material and a layer of an Al based alloy; and a plug composed of a high fusing point and low resistance material, electrically connecting to the first wiring conductor film and the second wiring conductor film. Thus, a semiconductor device showing almost no increase in electrical resistance in a wiring conductor film due to electromigration even after subjecting to a large current is provided.Type: GrantFiled: July 12, 1990Date of Patent: September 24, 1991Assignee: Hitachi, Ltd.Inventors: Jin Onuki, Masayasu Nihei, Yasushi Koubuchi, Motoo Suwa, Shinichi Fukada, Katsuhiko Shiota, Kunio Miyazaki, Tatsuo Itagaki, Jun Sugiura
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Patent number: 5019891Abstract: A semiconductor device and the method of fabricating the semiconductor device include a semiconductor substrate and a plurality of conductor films formed on the substrate. Each of the conductor films is made of aluminum alloy including at least one element selected from palladium and platinum and, more preferably, further including at least one element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chromium hafnium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobium, with a protective film which includes oxide of the selected one of palladium and platinum being formed on the side wall of the conductor film.Type: GrantFiled: January 12, 1989Date of Patent: May 28, 1991Assignee: Hitachi, Ltd.Inventors: Jin Onuki, Yasushi Koubuchi, Shinichi Fukada, Katuhiko Shiota, Kunio Miyazaki, Tatsuo Itagaki, Genji Taki
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Patent number: 4999096Abstract: A thin film forming method and apparatus is provided, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make a fraction of Ar ions to flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to hold stable discharge and reverse sputter at a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. A film whose peak value of x-ray diffraction strength in the (111) plane is 150 Xcps or more is possible.Type: GrantFiled: June 29, 1988Date of Patent: March 12, 1991Assignee: Hitachi, Ltd.Inventors: Masayasu Nihei, Jin Onuki, Yasushi Koubuchi, Kunio Miyazaki, Tatsuo Itagaki
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Patent number: 4965656Abstract: This invention provides a semiconductor device having an electrode conductor layer on a semiconductor substrate through the medium of a diffusion barrier layer, comprising the diffusion barrier layer formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device. According to this invention, the reaction between the metal conductor and the semiconductor substrate and the diffusion of the conductor material into the semiconductor substrate can be prevented and resultantly a semiconductor device having a high thermal reliability can be obtained.Type: GrantFiled: February 21, 1989Date of Patent: October 23, 1990Assignee: Hitachi, Ltd.Inventors: Yasushi Koubuchi, Jin Onuki, Masahiro Koizumi