Abstract: A high-frequency circuit device includes: a chip which includes a high-frequency element, a high-frequency circuit, a signal conductor, and a chip ground; a package substrate on which the chip is disposed, a shunt path which is constituted by a package signal conductor which is disposed on an upper surface of the package substrate and is electrically connected to the signal conductor, a package first ground which is electrically connected to the chip ground, and a shunt element which is electrically connected to the package signal conductor and the package first ground; and a package second ground which is disposed at least inside the base of the package substrate or on a back surface of the package substrate, wherein a part of the base, a part of the shunt path, and the package second ground constitute a capacitive structure.

Abstract: A semiconductor element comprising: an antenna array that is provided with a plurality of antennas each including a semiconductor layer having an electromagnetic wave gain or carrier nonlinearity with respect to a terahertz wave; and a coupling line that synchronizes adjacent antennas in the antenna array with each other at a frequency of the terahertz wave, wherein the coupling line includes a plurality of first regions connected to the adjacent antennas respectively and a second region provided between the plurality of first regions, wherein the second region has impedance different from impedance of each of the first regions, and wherein the second region has a loss larger than a loss of the individual first region at a frequency other than a resonance frequency of the antenna array.

Abstract: A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

Abstract: A system includes a transmission unit, a reception unit, and a lens unit and is placed in a passage, wherein in a case where a first plane that intersects a forward direction of the passage and is a surface of an object, and a second plane that intersects the forward direction of the passage, includes the lens unit, and is at a position different from a position of the first plane are set, a first area to which a terahertz wave from the transmission unit reflected from the first plane is emitted and the lens unit are disposed at positions different from each other on the second plane.

Abstract: An oscillator oscillating a tera hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

Abstract: An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

Abstract: An oscillator oscillating a tern hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

Abstract: Provided is an element that can reduce a parasitic oscillation.

Abstract: An imaging system comprising: a first lighting device that emits terahertz waves at a first quantity of light emission in a first operation mode, and emits terahertz waves at a second quantity of light emission, which is larger than the first quantity of light emission, in a second operation mode; a first detection device that detects reflected terahertz waves by a target and a control device that switches from the first operation mode to the second operation mode in a case where the first detection device detects the target in the first operation mode.

Abstract: A system includes a transmission unit, a reception unit, and a lens unit and is placed in a passage, wherein in a case where a first plane that intersects a forward direction of the passage and is a surface of an object, and a second plane that intersects the forward direction of the passage, includes the lens unit, and is at a position different from a position of the first plane are set, a first area to which a terahertz wave from the transmission unit reflected from the first plane is emitted and the lens unit are disposed at positions different from each other on the second plane.

Abstract: A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Abstract: A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

Abstract: A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

Abstract: Provided is an element that can reduce a parasitic oscillation.

Abstract: Provided is an element that can reduce a parasitic oscillation.

Abstract: A camera system is provided. The camera system is arranged to form a part of a monitoring system arranged in a place of a facility where an inspection object lines up. The camera system comprises an imaging system configured to acquire an image formed by a terahertz wave reflected by the inspection object.

Abstract: A movable body includes an imaging system which acquires an image formed by a terahertz wave, wherein the image is an image obtained by capturing an inspection object inside the movable body.

Abstract: A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Abstract: A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Abstract: An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency fLC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.