Abstract: A device for controlling an air conditioner has a remote controller which receives an alternating current voltage from a secondary side of a first transformer, a full-wave rectifier connected to a secondary side of a second transformer, and a processor which receives a current rectified by the full-wave rectifier. One of output nodes of the full-wave rectifier is connected to one terminal of the secondary side of the first transformer. The remote controller has a switch connected to the secondary side of the first transformer, and transmits information that indicates a state of the switch to the processor as the amplitude of an AC voltage on a signal line connecting the remote controller and the processor together.

Abstract: A motor driving apparatus includes a boosting section, a drive voltage output section, a detecting section, a storage section and a determining section. The boosting section generates a post-boosting voltage by boosting an input voltage. The drive voltage output section generates a drive voltage to drive a motor using the post-boosting voltage. The detecting section detects a value of the input voltage or a variation width relative to a reference value of the input voltage as variation power source variation information when there is power source variation. The storage section stores target value association information associating the power source variation information and a boosting target value of the post-boosting voltage. The determining section determines the boosting target value based on the power source variation information and target value association information. The target value association information is determined based on a range of operations of the drive voltage output section.

Abstract: In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas supply nozzle ejection ports). Specifically, in performing deposition reaction of the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa, when flow velocity of the source gas in gas supply ports of the source gas supply nozzles (9) is represented as u (m/sec), a source gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace (100) is represented as V (m3), values of u and Q of each of the source gas supply nozzles (9) are set such that a total ?(Q×u2/V) of values Q×u2/V is equal to or larger than 2500 (kg/m·sec3).

Abstract: A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.

Abstract: An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]?1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).

Abstract: In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas supply nozzle ejection ports). Specifically, in performing deposition reaction of the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa, when flow velocity of the source gas in gas supply ports of the source gas supply nozzles (9) is represented as u (m/sec), a source gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace (100) is represented as V (m3), values of u and Q of each of the source gas supply nozzles (9) are set such that a total ?(Q×u2/V) of values Q×u2/V is equal to or larger than 2500 (kg/m·sec3).

Abstract: A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.

Abstract: The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.

Abstract: The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.

Abstract: Switches (S1-S3) allow switching between parallel/series configuration in a circuit (16) provided between two pairs of U-shaped silicon cores (12) arranged in a bell jar (1). In the circuit (16), current is supplied from one low-frequency power source (15L) supplying a low-frequency current, or from one high-frequency power source (15H) supplying a variable-frequency, high-frequency power source is used high-frequency current having a frequency of not less than 2 kHz. The two pairs of U-shaped silicon cores (12) are connected to each other in series by closing the switch (S1) and opening the switches (S2 and S3), and when the switch (S4) is switched to the side of the high-frequency power source (15H), and electric heating of the silicon cores (12) can be performed by supplying a high-frequency current having a frequency of less than 2 kHz to the series-connected U-shaped silicon cores (12) (or polycrystalline silicon rods (11)).

Abstract: Switches (S1-S3) allow switching between parallel/series configuration in a circuit (16) provided between two pairs of U-shaped silicon cores (12) arranged in a bell jar (1). In the circuit (16), current is supplied from one low-frequency power source (15L) supplying a low-frequency current, or from one high-frequency power source (15H) supplying a high-frequency current having a frequency of not less than 2 kHz. The two pairs of U-shaped silicon cores (12) (or polycrystalline silicon rods (11)) are connected to each other in series by closing the switch (S1) and opening the switches (S2 and S3), and when the switch (S4) is switched to the side of the high-frequency power source (15H), and electric heating of the silicon cores (12) can be performed by supplying a high-frequency current having a frequency of less than 2 kHz to the series-connected U-shaped silicon cores (12) (or polycrystalline silicon rods (11)).

Abstract: Air bags (220A, 220B) are provided respectively at two planes facing each other on the inner circumference surface of a cylindrical member (210). Retrieving polycrystalline silicon rods (11) involves accommodating it inside the cylindrical member (210) of a carrying tool (200), for example, by putting the cylindrical member (210) on the rods (11) from above, and inflating the air bags (220) by gas injection so as to press the sides of the polycrystalline silicon rods (11) from a direction perpendicular to a plane including both pillars of the U-shaped silicon core wire so that the polycrystalline silicon rods (11) are held in place inside the cylindrical member (210). Then, the polycrystalline silicon rods (11) held in place are taken out of the reactor. Even if the polycrystalline silicon rods (11) have cracks, a collapse and the like are avoided as the air bags (220) absorb external impacts or the like.

Abstract: The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed.

Abstract: The reaction exhaust gas from which chlorosilanes and hydrogen chloride have been removed in a hydrogen chloride absorption unit (30) is introduced to an adsorption unit (50) to recover a purified hydrogen (S105). Activated carbon is packed in the adsorption unit (50), the gas, which is mainly composed of hydrogen, is passed through the activated carbon-packed layer during which unseparated chlorosilanes, hydrogen chloride, nitrogen, carbon monoxide, methane, and monosilane contained in the gas are adsorbed on the activated carbon and removed from the gas, and thereby the purified hydrogen is obtained. Nitrogen, carbon monoxide, methane and monosilane are a compressed gas in the state of adsorption, whereas hydrogen chloride and chlorosilanes are a liquid in the state of adsorption, and require a vaporization heat during desorption. Using these properties, the separation of hydrogen chloride and chlorosilanes from other impurity components is possible merely by separating the pathways for the desorbed gas.

Abstract: In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is S0. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S=S0/2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a<b<c). In the present invention, the electrode pairs 10 are placed inside of the imaginary concentric circle C and outside of the imaginary concentric circle B, and the gas supplying nozzle 9 is placed inside of the imaginary concentric circle A.

Abstract: A core wire holder 20 is formed with a core wire insert hole 21 having an opening part 22 on an upper surface of a main body and extending toward a lower surface side, and a silicon core wire 5 is inserted into the core wire insert hole 21. In addition, a slit-like gap part 60 extending along a virtual plane P including a central axis C of the core wire insert hole 21 is formed, and the slit-like gap part 60 is a gap part extending from the core wire insert hole 21 to reach an outer surface of the main body of the holder 20. The silicon core wire 5 inserted in the core wire insert hole 21 is fixed by fastening an upper part of the main body of the holder 20 from sides with, for example, a bolt/nut type fixing member 31.

Abstract: Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.

Abstract: A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.

Abstract: An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]?1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).

Abstract: The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.