Abstract: A semiconductor optical device may include a semiconductor substrate; a compound semiconductor layer on the semiconductor substrate; an additional insulating film on the pedestal portion of the compound semiconductor layer, the additional insulating film having an upper surface and a side surface at an inner obtuse angle between them; a passivation film covering the compound semiconductor layer and the additional insulating film except at least part of the mesa portion, the passivation film having a protrusion raised by overlapping with the additional insulating film; a mesa electrode on the at least part of the mesa portion; a pad electrode on the passivation film within the protrusion; and an extraction electrode on the passivation film, the extraction electrode being continuous within and outside the protrusion, the extraction electrode connecting the pad electrode and the mesa electrode, the extraction electrode being narrower in width than the pad electrode.

Abstract: A semiconductor optical device may include a semiconductor substrate; a compound semiconductor layer on the semiconductor substrate; an additional insulating film on the pedestal portion of the compound semiconductor layer, the additional insulating film having an upper surface and a side surface at an inner obtuse angle between them; a passivation film covering the compound semiconductor layer and the additional insulating film except at least part of the mesa portion, the passivation film having a protrusion raised by overlapping with the additional insulating film; a mesa electrode on the at least part of the mesa portion; a pad electrode on the passivation film within the protrusion; and an extraction electrode on the passivation film, the extraction electrode being continuous within and outside the protrusion, the extraction electrode connecting the pad electrode and the mesa electrode, the extraction electrode being narrower in width than the pad electrode.

Abstract: A display control device that controls a display state of a virtual image to be overlapped on an overlapping target in front of a passenger of the vehicle includes: a display image generator that generates a guide display object image formed by a combination of a plurality of image elements overlapped and displayed along a travel route to notify a passenger of the travel route of the vehicle; and an abandonment determination unit that determines whether each of the image elements is disposed out of a displayable range of the virtual image. When one of the image elements is disposed out of the displayable range, the display image generator displays a part of the image elements as the guide display object image, which is disposed along the travel route just before the one of the image elements that is determined to be out of the displayable range.

Abstract: An information presentation apparatus includes an out-of-vehicle risk detection section that is configured to detect an out-of-vehicle risk object, a gaze detection section that is configured to detect a gaze direction of a driver of the vehicle, a recognition determination section that is configured to determine whether the out-of-vehicle risk object is recognized by the driver based on a detection result by the out-of-vehicle risk detection section and a detection result by the gaze detection section, and an information presentation section that is configured to present, to the driver, out-of-vehicle risk information regarding the out-of-vehicle risk object in a presentation mode. The information presentation section is further configured to change the presentation mode depending on whether the out-of-vehicle risk object is recognized by the driver based on a determination result by the recognition determination section.

Abstract: A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.

Abstract: A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.

Abstract: The appearance of content that guides a traveling path of a vehicle is improved. When a display control ECU shifts a path line, which is expressed by path line information included in map information for navigation, in a vehicle transverse direction in accordance with a distance along the vehicle transverse direction between a position of a vehicle and the path line, the display control ECU causes content to be displayed on a HUD at a corresponding position on the shifted path line.

Abstract: A vehicle display control device displays a predetermined image at a display region showing a view ahead of a vehicle, the device including: a memory; and a processor coupled to the memory, the processor being configured to: acquire a travel state of the vehicle, and in a case in which the acquired travel state is a first mode in which an object ahead of the vehicle is detected and travel of the vehicle is controlled, display, at the display region, a first image indicating that the travel state is the first mode at a position that does not overlap with the object ahead of the vehicle.

Abstract: A vehicle display device, includes: a curve information acquisition section configured to acquire information relating to a degree of curvature of a travel lane; a deceleration determination section configured to determine whether or not deceleration of a vehicle is required based on the degree of curvature of the travel lane and a vehicle speed; and a marking display section configured to, in a case in which deceleration is required, cause a display device to display a predetermined first marking superimposed along the travel lane at a display region inside a vehicle cabin.

Abstract: A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.

Abstract: A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.

Abstract: A display control device for a vehicle to control a display of a virtual image to be superimposed on a superimposition target in a foreground of an occupant includes: a condition determination unit that determines whether a predetermined interruption condition is satisfied; and a display control unit that interrupts the display of the virtual image when the condition determination unit determines that the interruption condition is satisfied.

Abstract: A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.

Abstract: An information presentation apparatus includes an out-of-vehicle risk detection section that is configured to detect an out-of-vehicle risk object, a gaze detection section that is configured to detect a gaze direction of a driver of the vehicle, a recognition determination section that is configured to determine whether the out-of-vehicle risk object is recognized by the driver based on a detection result by the out-of-vehicle risk detection section and a detection result by the gaze detection section, and an information presentation section that is configured to present, to the driver, out-of-vehicle risk information regarding the out-of-vehicle risk object in a presentation mode. The information presentation section is further configured to change the presentation mode depending on whether the out-of-vehicle risk object is recognized by the driver based on a determination result by the recognition determination section.

Abstract: A display control device, for a vehicle, controls a display of a virtual image by a head-up display. The display control device generates a guidance display object that guides a traveling route for the vehicle. The display control device recognizes a remaining distance from the vehicle to a guide point at which a route guidance by the guidance display object is generated.

Abstract: A vehicle display control device controls display performed by a head-up display for a vehicle. The head-up display is configured to project an image on a projection member to cause a virtual image to be displayed in superimposed relation on a front view of the vehicle. The vehicle display control device determines a host vehicle situation as a road structure of a road on which a host vehicle is running, and controls to limit or not to limit a superimposed display of the virtual image with respect to a target object on which the virtual image is to be displayed in superimposed relation according to the host vehicle situation determined.

Abstract: The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 ?m or more.

Abstract: A semiconductor optical device may include a semiconductor substrate; a compound semiconductor layer on the semiconductor substrate; an additional insulating film on the pedestal portion of the compound semiconductor layer, the additional insulating film having an upper surface and a side surface at an inner obtuse angle between them; a passivation film covering the compound semiconductor layer and the additional insulating film except at least part of the mesa portion, the passivation film having a protrusion raised by overlapping with the additional insulating film; a mesa electrode on the at least part of the mesa portion; a pad electrode on the passivation film within the protrusion; and an extraction electrode on the passivation film, the extraction electrode being continuous within and outside the protrusion, the extraction electrode connecting the pad electrode and the mesa electrode, the extraction electrode being narrower in width than the pad electrode.

Abstract: The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 ?m or more.

Abstract: A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.