Abstract: A write preference determination unit (30A) compares a reception rate of packets received from the lines of a first network (NW1) with a reception rate threshold for write preference determination, and in a case where the reception rate exceeds the reception rate threshold, determines that preference of a write operation is necessary. A write preference control unit (30B) increases, out of a total access bandwidth of a packet buffer (BUF), a write bandwidth for a packet write operation to the packet buffer (BUF) as compared to a read bandwidth for a packet read operation from the packet buffer (BUF) in a case where the write preference determination unit (30A) determines that the preference is necessary, thereby preferentially executing the packet write operation to the packet buffer. This suppresses occurrence of linked discard of reception packets caused by a shortage of the write bandwidth.

Abstract: A write preference determination unit (30A) compares a reception rate of packets received from the lines of a first network (NW1) with a reception rate threshold for write preference determination, and in a case where the reception rate exceeds the reception rate threshold, determines that preference of a write operation is necessary. A write preference control unit (30B) increases, out of a total access bandwidth of a packet buffer (BUF), a write bandwidth for a packet write operation to the packet buffer (BUF) as compared to a read bandwidth for a packet read operation from the packet buffer (BUF) in a case where the write preference determination unit (30A) determines that the preference is necessary, thereby preferentially executing the packet write operation to the packet buffer. This suppresses occurrence of linked discard of reception packets caused by a shortage of the write bandwidth.

Abstract: When an accelerator is put in an OFF state to decelerate a vehicle and perform inertia travel with supply of fuel being cut off, measurement of an accelerator OFF lapse time is started. When a travel speed falls down to be lower than a pre-stop speed, a measured lapse time is stored in a memory, with the measurement of the lapse time being further continued. After finishing a travel of a downward slope, the travel speed is reduced to fall down to the pre-stop speed again, a lapse time continuously measured up to that time is updated in the memory. When the travel speed falls to a stop speed, the measurement of the lapse time is finished and the continuously-measured lapse time is determined as a required stop time of the vehicle. As the required stop time increases, driving is diagnosed as being fuel-efficient.

Abstract: A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.

Abstract: A drive condition, which is used to determine a SOC management plan, is collected from each of road sections and is cumulatively memorized in a durable memory medium. When a remaining charge amount of a battery reaches a lower limit standard value or an upper limit standard value at a certain location, a candidate control section is defined around and includes such point. The candidate control section is defined to extend a predetermined distance forward and backward from such point. The drive conditions stored for the candidate control section are used to determine the SOC management plan that controls the remaining charge amount of the battery to be controlled within a standard range. When the vehicle enters the candidate control section, the drive control of a power source in the vehicle is performed according to the SOC management plan for the candidate control section.

Abstract: A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.

Abstract: It is determined whether a vehicle enters a halting state or a slow moving state. It is detected that an accelerator opening degree of the vehicle is zero during a deceleration duration up to the time to enter the halting state or the slow moving state. Further, an accelerator zero duration is calculated which is a duration for which the vehicle is in the halting state or the slow moving state while the accelerator opening degree is zero. Furthermore, an accelerator zero travel distance is calculated which the vehicle runs during the calculated accelerator zero duration. Based on the accelerator zero travel distance, it is determined whether the fuel saving driving operation is performed in traveling during the accelerator zero travel duration. Even in the state where the travel speed of the vehicle changes more than needs during inertia travel, the fuel saving driving operation is diagnosed appropriately.

Abstract: A drive condition, which is used to determine a SOC management plan, is collected from each of road sections and is cumulatively memorized in a durable memory medium. When a remaining charge amount of a battery reaches a lower limit standard value or an upper limit standard value at a certain location, a candidate control section is defined around and includes such point. The candidate control section is defined to extend a predetermined distance forward and backward from such point. The drive conditions stored for the candidate control section are used to determine the SOC management plan that controls the remaining charge amount of the battery to be controlled within a standard range. When the vehicle enters the candidate control section, the drive control of a power source in the vehicle is performed according to the SOC management plan for the candidate control section.

Abstract: When an accelerator is put in an OFF state to decelerate a vehicle and perform inertia travel with supply of fuel being cut off, measurement of an accelerator OFF lapse time is started. When a travel speed falls down to be lower than a pre-stop speed, a measured lapse time is stored in a memory, with the measurement of the lapse time being further continued. After finishing a travel of a downward slope, the travel speed is reduced to fall down to the pre-stop speed again, a lapse time continuously measured up to that time is updated in the memory. When the travel speed falls to a stop speed, the measurement of the lapse time is finished and the continuously-measured lapse time is determined as a required stop time of the vehicle. As the required stop time increases, driving is diagnosed as being fuel-efficient.

Abstract: A vehicle includes a wheel and a vehicle body connected with each other via a suspension having a spring. An oscillation detection unit detects an oscillation of the vehicle body in forward and backward directions. A resonance frequency detection unit detects a resonance frequency of the vehicle body according to a detection result of the oscillation detection unit. A weight determination unit determines a weight of the vehicle body according to the resonance frequency detected by the resonance frequency detection unit.

Abstract: It is determined whether a vehicle enters a halting state or a slow moving state. It is detected that an accelerator opening degree of the vehicle is zero during a deceleration duration up to the time to enter the halting state or the slow moving state. Further, an accelerator zero duration is calculated which is a duration for which the vehicle is in the halting state or the slow moving state while the accelerator opening degree is zero. Furthermore, an accelerator zero travel distance is calculated which the vehicle runs during the calculated accelerator zero duration. Based on the accelerator zero travel distance, it is determined whether the fuel saving driving operation is performed in traveling during the accelerator zero travel duration. Even in the state where the travel speed of the vehicle changes more than needs during inertia travel, the fuel saving driving operation is diagnosed appropriately.

Abstract: An administration management system for managing vehicles includes plural vehicle units and plural cellular phones respectively having common codes for correspondence between vehicle units and cellular phones. When the common code matches, the vehicle unit and the cellular phone perform an automatic connection procedure and administration management information acquired by the vehicle unit is transmitted to a center unit through a broad range network from the cellular phone. The cellular phone and the vehicle unit are prevented from being connected with each other in an erroneous manner without undergoing complicated connection procedure so as to establish appropriate communication for transmission of administration management information by using the common code assigned thereto.

Abstract: A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.

Abstract: A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.

Abstract: A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.

Abstract: A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.

Abstract: A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.

Abstract: An alloy oxide film of platinum and rhodium is formed as an upper electrode so as to be put in direct contact with a ferroelectric PZT film. Asymmetry of a hysteresis loop characteristic of a dielectric material representing a correlation between a polarization value and an application electric field as well as a deterioration such as an increase in leak current density, when oxide electrode of IrO2, RuO2, RhO2 or the like is used, are improved.

Abstract: In a semiconductor storage device in a stack structure wherein a capacitor section having an upper electrode, a dielectric layer, and a lower electrode is connected with a transistor section by a plug, the lower electrode is formed in contact with the plug. The lower electrode is formed of at least an oxide of a platinum-rhodium alloy. In addition to the oxide of a platinum-rhodium alloy, platinum and/or a platinum-rhodium alloy can be used as materials for forming the lower electrode. The plug is formed of polysilicon or tungsten. When the plug is formed of polysilicon, the lower electrode is formed by sequentially laminating, for example, a film of the oxide of the platinum-rhodium alloy, a film of the platinum-rhodium alloy, and a film of the oxide of the platinum-rhodium alloy on the plug.

Abstract: In a semiconductor memory device, a tantalum silicon nitride film or hafnium silicon nitride film is provided, as a diffusion barrier layer, between a polysilicon plug which electrically connects a source/drain region to a lower platinum electrode of a capacitor, formed on a silicon substrate, and the lower platinum electrode.The tantalum silicon nitride film has a composition of Ta.sub.X Si.sub.1-X N.sub.Y wherein 0.75 .ltoreq.X.ltoreq.0.95 and 1.0 .ltoreq.Y.ltoreq.1.1.The hafnium silicon nitride film has a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2<X<1.0 and 0<Y<1.0.