Abstract: According to an embodiment, a semiconductor storage device includes a substrate. A stack is provided above the substrate, and includes a resistance change element and a metal layer provided above the resistance change element. A first insulating layer is provided on a side surface of the stack. A second insulating layer is provided on the first insulating layer. And an electrode is provided on the metal layer and on the first insulating layer so as to extend along a stacking direction in the second insulating layer. A lower surface of the electrode as viewed in the direction has a diameter greater than a diameter of an upper surface of the stack as viewed in the direction. A lowermost portion of the electrode is at a same level as an uppermost portion of the metal layer as viewed in the direction.

Abstract: According to one embodiment, a magnetoresistive memory device includes: a bottom structure; a layer stack on the bottom structure; a first insulating layer on a sidewall of the layer stack; a first spacer layer on the first insulating layer; a second insulating layer on the first spacer layer; a second spacer layer on the second insulating layer; and a third insulating layer on the second spacer layer. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: According to one embodiment, an insulating layer is formed on a substrate. A hole is formed in the insulating layer. A metal layer is formed in the hole to fill the hole. A surface of the insulating layer and a surface of the metal layer is removed by etching with ion beams having a first angle, which etches both the insulating layer and the metal layer at a first etching rate. A resistance change element is formed on the metal layer.

Abstract: Provided is a washing machine motor capable of efficiently generating torque by improving a winding factor of coils with a relatively simple configuration. The washing machine motor (12) has an outer rotor (20), an inner rotor (30), and a stator (60). The outer rotor (20) and the inner rotor (30) share coils (63) of the stator (60), and a composite current is supplied to the coils (63) such that the outer rotor (20) and the inner rotor (30) are independently driven. The outer rotor (20) has forty eight outer magnets (24) arranged such that the N and S poles thereof are continuously and alternately aligned in the circumferential direction thereof. The inner rotor (30) has forty-two inner magnets (34) arranged such that the N and S poles thereof are continuously and alternately aligned in the circumferential direction thereof. The stator (60) has thirty-six I-shaped cores (61) and the coils (63).

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, a first insulating layer covering the stacked structure and including a protrusion based on the stacked structure, a second insulating layer provided on the first insulating layer, and an electrode connected to the stacked structure. The first insulating layer has a first hole passing through the first insulating layer, the electrode is connected to the stacked structure at least through the first hole, the second insulating layer has a second hole inside of which a part of the electrode and the protrusion are provided, and the second hole includes a part whose area increases toward the stacked structure.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).

Abstract: According to one embodiment, an insulating layer is formed on a substrate. A hole is formed in the insulating layer. A metal layer is formed in the hole to fill the hole. A surface of the insulating layer and a surface of the metal layer is removed by etching with ion beams having a first angle, which etches both the insulating layer and the metal layer at a first etching rate. A resistance change element is formed on the metal layer.

Abstract: According to one embodiment, a magnetic memory device includes a lower structure, a stacked structure provided on the lower structure and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a first sidewall insulating layer which is provided along a sidewall of the stacked structure and whose per end is located lower than an upper surface of the nonmagnetic layer.

Abstract: According to an embodiment, a semiconductor storage device includes a substrate. A stack is provided above the substrate, and includes a resistance change element and a metal layer provided above the resistance change element. A first insulating layer is provided on a side surface of the stack. A second insulating layer is provided on the first insulating layer. And an electrode is provided on the metal layer and on the first insulating layer so as to extend along a stacking direction in the second insulating layer. A lower surface of the electrode as viewed in the direction has a diameter greater than a diameter of an upper surface of the stack as viewed in the direction. A lowermost portion of the electrode is at a same level as an uppermost portion of the metal layer as viewed in the direction.

Abstract: Disclosed herein is a washing machine. The washing machine includes a housing provided with an inlet for laundry disposed on a front surface thereof, a water tub provided inside of the housing and configured to store water, a drum rotatably provided inside of the water tub, a pulsator provided inside of the drum and configured to be rotated independently of the drum, a motor provided with a stator, and a first and second rotor connected to the drum and the pulsator, respectively, and at least one processor configured to apply a q-axis current to the stator to rotate the second rotor and configured to apply a d-axis current to the stator to rotate the first rotor based on a phase difference between the first rotor and the second rotor.

Abstract: The present disclosure includes a washing machine including an inner rotor and an outer rotor. An outer rotor and an inner rotor may be rotated in a synchronous rotation mode or a counter rotation mode by converting the number of magnetic poles of the outer rotor. When the outer rotor becomes inoperable when the outer rotor is set to the number of magnetic poles for performing the counter rotation mode, it is converted to the number of magnetic poles for performing the synchronous rotation mode while the outer rotor is stopped.

Abstract: Provided is a washing machine including: a stator including a coil; a rotor including a plurality of variable magnets each having a magnetic force variable, and rotatable with respect to the stator; a controller configured to control an energizing of the coil to increase or decrease a magnetic force of the variable magnet; and a plurality of position sensors each having a output voltage changed according to a magnetic flux of the variable magnet.

Abstract: Disclosed is a motor improved to increase a magnetization property. The motor includes a stator including a plurality of teeth arranged to be spaced apart in a circumferential direction and a rotor configured to include a plurality of magnets arranged inside or outside the stator and to rotate while electromagnetically interacting with the stator. The plurality of teeth include first teeth having a first cross section and second teeth having a second cross section larger than the first cross section and is configured to switch at least one magnetic pole of the plurality of magnets by using the second teeth.

Abstract: A motor has a two rotors which are independently operated using a single inverter and without being supplied with a complex current. Further the motor is capable of shifting a rotation direction of each of two rotors by performing a magnetizing operation one time and reversing polarities of the shifting magnets when a mode of the motor is shifted from a synchronous mode in which the first rotor and the second rotor rotate in the same direction to a counter mode in which the first rotor and the second rotor rotate in opposite directions, and shifting the mode of the motor to the counter mode while the magnetizing operation is performed one time times and relative positions of the first rotor and the second rotor are changed when the first rotor and the second rotor inertially rotate in the synchronous mode.

Abstract: According to one embodiment, an etching apparatus includes an etching chamber, a stage in the etching chamber, a plasma generator in the etching chamber, the plasma generator being opposite to the stage and irradiating an ion beam toward the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a first driver changing a beam angle between a direction which is perpendicular to an upper surface of the stage and the direction in which the ion beam is irradiated, and a second driver which rotates the stage on the rotational axis.

Abstract: According to one embodiment, an etching apparatus includes a stage in an etching chamber, the stage which holds one of a first substrate and a second substrate, a plasma generator in the etching chamber, the plasma generator which is opposite to the stage and irradiates an ion beam toward the stage, a grid which is provided between the plasma generator and the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a controller which is configured to mount the first substrate on the stage and irradiate the ion beam with the beam angle larger than 0° to the first substrate, when an elapsed time from an end of an etching of a predetermined layer in the second substrate is equal to or larger than a predetermined time.

Abstract: According to one embodiment, a magnetic memory includes a first metal layer including a first metal, a second metal layer on the first metal layer, the second metal layer including a second metal which is more easily oxidized than the first metal, the second metal layer having a first sidewall portion which contacts the first metal layer, and the second metal layer having a second sidewall portion above the first sidewall portion, the second sidewall portion which steps back from the first sidewall portion, a magnetoresistive element on the second metal layer, a third metal layer on the magnetoresistive element, and a first material which contacts a sidewall portion of the magnetoresistive element and the second sidewall portion of the second metal layer, the first material including an oxide of the second metal.

Abstract: A washing machine capable of independently driving two rotors using one inverter in a simple configuration without supplying a composite current includes an outer rotor having a plurality of switching magnets arranged at intervals in the circumferential direction, and an inner rotor having a plurality of stationary magnets arranged to be radially arranged at intervals in the circumferential direction. When a magnetizing current is supplied to the coil of the stator, the magnetic pole of the switching magnet is inverted and the number of the poles of the outer rotor is switched.

Abstract: Disclosed is a home appliance including a claw pole type motor, the claw pole type motor include a first core including a first core main body disposed on a rotary shaft, a first elongation portion disposed in the center portion of the first core main body and extending in the axial line direction of the rotary shaft, and a plurality of first claw poles disposed in the edge portion of the first core main body and extending in the axial line direction of the rotary shaft and a second core including a second core main body disposed on the rotary shaft, and a plurality of second claw poles disposed in the edge portion of the second core main body and extending in the axial line direction of the rotary shaft and a third core including a third core main body disposed on the rotary shaft, a second elongation portion disposed in the center portion of the third core main body and extending in the axial line direction of the rotary shaft, and a plurality of third claw poles disposed in the edge portion of the third co

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).