Patents by Inventor Yaswanth Rangineni
Yaswanth Rangineni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230246624Abstract: Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.Type: ApplicationFiled: April 5, 2023Publication date: August 3, 2023Inventors: Yaswanth Rangineni, Sunil Kapoor, Edward Augustyniak, Yukinori Sakiyama
-
Publication number: 20220375721Abstract: Radio frequency power conveyed to individual process stations of a multi-station integrated circuit fabrication chamber may be adjusted so as to bring the rates at which fabrication processes occur, and/or fabrication process results, into alignment with one another. Such adjustment in radio frequency power, which may be accomplished via adjusting one or more reactive elements of a RF distribution network, may give rise to an imbalance in power delivered to each individual process station.Type: ApplicationFiled: October 23, 2020Publication date: November 24, 2022Inventors: Jeremy David Fields, Awnish Gupta, Chun-Hao Chen, Yaswanth Rangineni, Frank Loren Pasquale
-
Publication number: 20220158604Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.Type: ApplicationFiled: February 1, 2022Publication date: May 19, 2022Inventors: Sunil Kapoor, George Thomas, Yaswanth Rangineni, Edward Augustyniak
-
Publication number: 20220149801Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.Type: ApplicationFiled: January 21, 2022Publication date: May 12, 2022Inventors: Sunil Kapoor, Aaron Logan, Hyungjoon Kim, Yaswanth Rangineni, Karl Leeser
-
Patent number: 11258420Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.Type: GrantFiled: March 30, 2020Date of Patent: February 22, 2022Assignee: Lam Research CorporationInventors: Sunil Kapoor, Aaron Logan, Hyungjoon Kim, Yaswanth Rangineni, Karl Leeser
-
Patent number: 11258421Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.Type: GrantFiled: February 21, 2020Date of Patent: February 22, 2022Assignee: Lam Research CorporationInventors: Sunil Kapoor, George Thomas, Yaswanth Rangineni, Edward Augustyniak
-
Patent number: 10879092Abstract: A plasma processing system having a plurality of stations is provided. Each station has a substrate support and a showerhead for supplying process gases. A radio frequency (RF) power supply and a distribution system is provided, where the distribution system is coupled to the RF power supply. A plurality of voltage probes is provided. Each of the plurality of voltage probes is connected in-line between the distribution system and each showerhead of each of the stations. A controller is configured to receive sensed voltage values from each of the plurality of voltage probes and compare the sensed voltage values against a plurality of voltage check bands. Each voltage check band is predefined for a process operation, and the controller is configured to generate an alert when the comparing detects that a sensed voltage value is outside of a voltage check band.Type: GrantFiled: August 7, 2018Date of Patent: December 29, 2020Assignee: Lam Research CorporationInventors: Sunil Kapoor, Yaswanth Rangineni, Aaron Bingham, Tuan Nguyen
-
Publication number: 20200252040Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.Type: ApplicationFiled: March 30, 2020Publication date: August 6, 2020Inventors: Sunil Kapoor, Aaron Logan, Hyungjoon Kim, Yaswanth Rangineni, Karl Leeser
-
Publication number: 20200195216Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.Type: ApplicationFiled: February 21, 2020Publication date: June 18, 2020Inventors: Sunil Kapoor, George Thomas, Yaswanth Rangineni, Edward Augustyniak
-
Patent number: 10637427Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.Type: GrantFiled: July 16, 2018Date of Patent: April 28, 2020Assignee: Lam Research CorporationInventors: Sunil Kapoor, Aaron Logan, Hyungjoon Kim, Yaswanth Rangineni, Karl Leeser
-
Patent number: 10622962Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.Type: GrantFiled: January 16, 2019Date of Patent: April 14, 2020Assignee: Lam Research CorporationInventors: Sunil Kapoor, George Thomas, Yaswanth Rangineni, Edward Augustyniak
-
Publication number: 20190149119Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.Type: ApplicationFiled: January 16, 2019Publication date: May 16, 2019Inventors: Sunil Kapoor, George Thomas, Yaswanth Rangineni, Edward Augustyniak
-
Patent number: 10187032Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.Type: GrantFiled: September 1, 2016Date of Patent: January 22, 2019Assignee: Lam Research CorporationInventors: Sunil Kapoor, George Thomas, Yaswanth Rangineni, Edward Augustyniak
-
Publication number: 20180350643Abstract: A plasma processing system having a plurality of stations is provided. Each station has a substrate support and a showerhead for supplying process gases. A radio frequency (RF) power supply and a distribution system is provided, where the distribution system is coupled to the RF power supply. A plurality of voltage probes is provided. Each of the plurality of voltage probes is connected in-line between the distribution system and each showerhead of each of the stations. A controller is configured to receive sensed voltage values from each of the plurality of voltage probes and compare the sensed voltage values against a plurality of voltage check bands. Each voltage check band is predefined for a process operation, and the controller is configured to generate an alert when the comparing detects that a sensed voltage value is outside of a voltage check band.Type: ApplicationFiled: August 7, 2018Publication date: December 6, 2018Inventors: Sunil Kapoor, Yaswanth Rangineni, Aaron Bingham, Tuan Nguyen
-
Patent number: 10145010Abstract: Apparatuses for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the apparatuses, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: GrantFiled: November 10, 2017Date of Patent: December 4, 2018Assignee: Lam Research CorporationInventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
-
Publication number: 20180331669Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.Type: ApplicationFiled: July 16, 2018Publication date: November 15, 2018Inventors: Sunil Kapoor, Aaron Logan, Hyungjoon Kim, Yaswanth Rangineni, Karl Leeser
-
Patent number: 10128160Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.Type: GrantFiled: November 20, 2017Date of Patent: November 13, 2018Assignee: Lam Research CorporationInventors: Yukinori Sakiyama, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Ramesh Chandrasekharan, Edward Augustyniak, Douglas Keil
-
Patent number: 10044338Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.Type: GrantFiled: October 15, 2015Date of Patent: August 7, 2018Assignee: Lam Research CorporationInventors: Sunil Kapoor, Aaron Logan, Hyungjoon Kim, Yaswanth Rangineni, Karl Leeser
-
Patent number: 10043690Abstract: A method includes providing radio frequency (RF) power from an RF power supply to a showerhead of a plasma processing system running a process operation on a substrate disposed in the plasma processing system. The method senses a voltage the showerhead using a voltage probe that is connected in-line between the RF power supply and the showerhead. The sensing of the voltage produces voltage values during the running of the process operation. The method includes comparing the voltage values against a voltage check band that is predefined for the process operation being run. The comparing is configured to detect when the voltage values are outside of the voltage check band. The method generates an alert when the comparing detects that the voltage values are outside of the voltage check band. The alert identifies a type of fault based on the voltage check band that was predefined for the process operation.Type: GrantFiled: March 22, 2016Date of Patent: August 7, 2018Assignee: Lam Research CorporationInventors: Sunil Kapoor, Yaswanth Rangineni, Aaron Bingham, Tuan Nguyen
-
Publication number: 20180175819Abstract: Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.Type: ApplicationFiled: December 16, 2016Publication date: June 21, 2018Inventors: Yaswanth Rangineni, Sunil Kapoor, Edward Augustyniak, Yukinori Sakiyama