Patents by Inventor Yaswanth Rangineni
Yaswanth Rangineni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20180163302Abstract: Apparatuses for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the apparatuses, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: ApplicationFiled: November 10, 2017Publication date: June 14, 2018Inventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
-
Patent number: 9997422Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.Type: GrantFiled: April 4, 2016Date of Patent: June 12, 2018Assignee: Lam Research CorporationInventors: Ishtak Karim, Yukinori Sakiyama, Yaswanth Rangineni, Edward Augustyniak, Douglas Keil, Ramesh Chandrasekharan, Adrien LaVoie, Karl Leeser
-
Patent number: 9941113Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.Type: GrantFiled: May 1, 2017Date of Patent: April 10, 2018Assignee: Lam Research CorporationInventors: Douglas Keil, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Yukinori Sakiyama, Edward Augustyniak, Karl Leeser, Chunhai Ji
-
Publication number: 20180076100Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.Type: ApplicationFiled: November 20, 2017Publication date: March 15, 2018Inventors: Yukinori Sakiyama, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Ramesh Chandrasekharan, Edward Augustyniak, Douglas Keil
-
Patent number: 9875883Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.Type: GrantFiled: July 26, 2017Date of Patent: January 23, 2018Assignee: Lam Research CorporationInventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
-
Publication number: 20170365907Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.Type: ApplicationFiled: September 1, 2016Publication date: December 21, 2017Inventors: Sunil Kapoor, George Thomas, Yaswanth Rangineni, Edward Augustyniak
-
Patent number: 9840776Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: GrantFiled: December 15, 2015Date of Patent: December 12, 2017Assignee: Lam Research CorporationInventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
-
Publication number: 20170338085Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.Type: ApplicationFiled: July 26, 2017Publication date: November 23, 2017Inventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
-
Patent number: 9824941Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.Type: GrantFiled: March 18, 2016Date of Patent: November 21, 2017Assignee: Lam Research CorporationInventors: Yukinori Sakiyama, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Ramesh Chandrasekharan, Edward Augustyniak, Douglas Keil
-
Publication number: 20170330744Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.Type: ApplicationFiled: May 1, 2017Publication date: November 16, 2017Inventors: Douglas Keil, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Yukinori Sakiyama, Edward Augustyniak, Karl Leeser, Chunhai Ji
-
Patent number: 9754769Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.Type: GrantFiled: September 15, 2015Date of Patent: September 5, 2017Assignee: Lam Research CorporationInventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
-
Publication number: 20170141000Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.Type: ApplicationFiled: March 18, 2016Publication date: May 18, 2017Inventors: Yukinori Sakiyama, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Ramesh Chandrasekharan, Edward Augustyniak, Douglas Keil
-
Publication number: 20170141002Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.Type: ApplicationFiled: April 4, 2016Publication date: May 18, 2017Inventors: Ishtak Karim, Yukinori Sakiyama, Yaswanth Rangineni, Edward Augustyniak, Douglas Keil, Ramesh Chandrasekharan, Adrien LaVoie, Karl Leeser
-
Patent number: 9644271Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.Type: GrantFiled: May 13, 2016Date of Patent: May 9, 2017Assignee: Lam Research CorporationInventors: Douglas Keil, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Yukinori Sakiyama, Edward Augustyniak, Karl Leeser, Chunhai Ji
-
Publication number: 20170111025Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.Type: ApplicationFiled: October 15, 2015Publication date: April 20, 2017Inventors: Sunil Kapoor, Aaron Logan, Hyungjoon Kim, Yaswanth Rangineni, Karl Leeser
-
Publication number: 20170076921Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.Type: ApplicationFiled: September 15, 2015Publication date: March 16, 2017Inventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
-
Publication number: 20160293385Abstract: Methods and systems for detecting processing conditions of a plasma processing system are provided. One method includes providing radio frequency (RF) power from an RF power supply to a showerhead of the plasma processing system and running a process operation on a substrate disposed in the plasma processing system. The method further includes sensing a voltage the showerhead using a voltage probe that is connected in-line between the RF power supply and the showerhead. The sensing of the voltage produces voltage values during the running of the process operation. The method includes comparing the voltage values against a voltage check band that is predefined for the process operation being run. The comparing is configured to detect when the voltage values are outside of the voltage check band. The method also includes generating an alert when the comparing detects that the voltage values are outside of the voltage check band.Type: ApplicationFiled: March 22, 2016Publication date: October 6, 2016Inventors: Sunil Kapoor, Yaswanth Rangineni, Aaron Bingham, Tuan Nguyen
-
Publication number: 20160168701Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: ApplicationFiled: December 15, 2015Publication date: June 16, 2016Inventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
-
Patent number: 9263350Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: GrantFiled: August 12, 2014Date of Patent: February 16, 2016Assignee: Lam Research CorporationInventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
-
Publication number: 20150348854Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: ApplicationFiled: August 12, 2014Publication date: December 3, 2015Inventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni