Patents by Inventor Yaxin Wang
Yaxin Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20110143553Abstract: Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.Type: ApplicationFiled: December 10, 2010Publication date: June 16, 2011Applicant: Lam Research CorporationInventors: Yaxin Wang, Shijian Li, Fritz Redeker, John Parks, Artur Kolics, Hyungsuk Alexander Yoon, Tarek Suwwan de Felipe, Mikhail Korolik
-
Patent number: 7910476Abstract: A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.Type: GrantFiled: September 29, 2008Date of Patent: March 22, 2011Assignee: Applied Materials, Inc.Inventors: Hongbin Fang, Timothy Weidman, Fang Mei, Yaxin Wang, Arulkumar Shanmugasundram, Christopher D. Bencher, Mehul B. Naik
-
Patent number: 7542132Abstract: A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.Type: GrantFiled: July 30, 2007Date of Patent: June 2, 2009Assignee: Applied Materials, Inc.Inventors: Hongbin Fang, Josh Golden, Timothy W. Weidman, Yaxin Wang, Arulkumar Shanmugasundram
-
Publication number: 20090111284Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (H3C)—N?N—H into the processing chamber; flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and depositing a silicon and nitrogen containing film on the substrate.Type: ApplicationFiled: January 5, 2009Publication date: April 30, 2009Inventors: Yaxin Wang, Yuji Maeda, Thomas C. Mele, Sean M. Seutter, Sanjeev Tandon, R. Suryanarayanan Iyer
-
Publication number: 20090029544Abstract: A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.Type: ApplicationFiled: September 29, 2008Publication date: January 29, 2009Inventors: Hongbin Fang, Timothy Weidman, Fang Mei, Yaxin Wang, Arulkumar Shanmugasundram, Christopher D. Bencher, Mehul B. Naik
-
Patent number: 7473655Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.Type: GrantFiled: June 17, 2005Date of Patent: January 6, 2009Assignee: Applied Materials, Inc.Inventors: Yaxin Wang, Yuji Maeda, Thomas C. Mele, Sean M. Seutter, Sanjeev Tandon, R. Suryanarayanan Iyer
-
Patent number: 7413627Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.Type: GrantFiled: November 23, 2004Date of Patent: August 19, 2008Assignee: Applied Materials, Inc.Inventors: Shijian Li, Yaxin Wang, Fred C. Redeker, Tetsuya Ishikawa, Alan W. Collins
-
Publication number: 20080024762Abstract: A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.Type: ApplicationFiled: July 30, 2007Publication date: January 31, 2008Inventors: HONGBIN FANG, Josh Golden, Timothy Weidman, Yaxin Wang, Arulkumar Shanmugasundram
-
Publication number: 20070111519Abstract: Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.Type: ApplicationFiled: June 30, 2006Publication date: May 17, 2007Inventors: Dmitry Lubomirsky, Arulkumar Shanmugasundram, Allen D'Ambra, Timothy Weidman, Michael Stewart, Eugene Rabinovich, Svetlana Sherman, Manoocher Birang, Yaxin Wang, Michael Yang, Bradley Hansen
-
Publication number: 20070095367Abstract: The present invention generally provides an apparatus and method of processing substrates to uniformly remove any residual contamination from the surface of a substrate by use of an appropriate cleaning chemistry and contact with a cleaning medium. In one embodiment, the cleaning medium, such as is a brush or a scrubbing component that is positioned in a cleaning module. In one embodiment, the process of cleaning the surface of a substrate W is completed by “scrubbing” the surface of the substrate while using a cleaning solution that is selected to chemically etch a material from the surface of the substrate. In one aspect, the amount of material removed from the surface of a substrate is only about 10-30 Angstroms (?). In one embodiment, the substrate surface is cleaned by use of a scrubbing process that uses a fluid that doesn't react with the exposed materials on the surface of the substrate.Type: ApplicationFiled: October 28, 2005Publication date: May 3, 2007Inventors: Yaxin Wang, Fang Mei, Van Nguyen, Arulkumar Shanmugasundram, Dmitry Lubomirsky
-
Publication number: 20070099417Abstract: A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.Type: ApplicationFiled: January 10, 2006Publication date: May 3, 2007Inventors: Hongbin Fang, Timothy Weidman, Fang Mei, Yaxin Wang, Arulkumar Shanmugasundram, Christopher Bencher, Mehul Naik
-
Publication number: 20060286818Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.Type: ApplicationFiled: June 17, 2005Publication date: December 21, 2006Inventors: Yaxin Wang, Yuji Maeda, Thomas Mele, Sean Seutter, Sanjeev Tandon, R. Iyer
-
Publication number: 20060033678Abstract: Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.Type: ApplicationFiled: July 29, 2005Publication date: February 16, 2006Inventors: Dmitry Lubomirsky, Arulkumar Shanmugasundram, Allen D'Ambra, Timothy Weidman, Eugene Rabinovich, Svetlana Sherman, Manoocher Birang, Yaxin Wang, Michael Yang, Bradley Hansen
-
Publication number: 20060019032Abstract: In one embodiment, a method for depositing a layer containing silicon nitride on a substrate surface is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to an alkylaminosilane compound and at least one ammonia-free reactant. In another embodiment, a method for depositing a silicon nitride material on a substrate is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to bis(tertiarybutylamino)silane and a reagent, such as hydrogen, silane and/or disilane.Type: ApplicationFiled: July 23, 2004Publication date: January 26, 2006Inventors: Yaxin Wang, Suryanarayanan Iyer, Sean Seutter
-
Publication number: 20050150454Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.Type: ApplicationFiled: November 23, 2004Publication date: July 14, 2005Applicant: Applied Materials, Inc.Inventors: Shijian Li, Yaxin Wang, Fred Redeker, Tetsuya Ishikawa, Alan Collins
-
Patent number: 6833052Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.Type: GrantFiled: October 29, 2002Date of Patent: December 21, 2004Assignee: Applied Materials, Inc.Inventors: Shijian Li, Yaxin Wang, Fred C. Redeker, Tetsuya Ishikawa, Alan W. Collins
-
Patent number: 6814814Abstract: In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.Type: GrantFiled: March 29, 2002Date of Patent: November 9, 2004Assignee: Applied Materials, Inc.Inventors: Alan W. Collins, Feng Gao, Tetsuya Ishikawa, Padmanaban Krishnaraj, Yaxin Wang
-
Publication number: 20030213560Abstract: The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region.Type: ApplicationFiled: August 27, 2002Publication date: November 20, 2003Inventors: Yaxin Wang, Sean Michael Seutter, Xiaoliang Jin
-
Publication number: 20030183243Abstract: In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.Type: ApplicationFiled: March 29, 2002Publication date: October 2, 2003Applicant: Applied Materials, Inc.Inventors: Alan W. Collins, Feng Gao, Tetsuya Ishikawa, Padmanaban Krishnaraj, Yaxin Wang
-
Patent number: 6624064Abstract: The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.Type: GrantFiled: October 10, 1997Date of Patent: September 23, 2003Assignee: Applied Materials, Inc.Inventors: Turgut Sahin, Yaxin Wang, Ming Xi