Abstract: A brush polymer for a photoresist, a photoresist composition, and a method of manufacturing an integrated circuit device, the brush polymer including a core and a plurality of side polymer chains, the plurality of side polymer chains being bonded to the core and extending from the core to form a bottle-brush polymer or a star-brush polymer, together with the core, wherein each of the plurality of side polymer chains includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2:

Abstract: Provided are a method for manufacturing a composite powder and a composite granular powder manufactured by the method, the method including: preparing a slurry in which a yttria powder, a magnesia powder, a solvent, and an organic additive are mixed; performing ball milling on the slurry; and drying the slurry to produce a granular powder containing the yttria powder and the magnesia powder, wherein the granular powder contains yttria crystals and magnesia crystals.

Abstract: The present invention relates to an artificial marble having a total transmittance of 6 or greater and 20 or less when the total transmittance is measured using a turbidimeter (NDH 5000 available from Nippon Denshoku) for an artificial marble sample with a size of 7 cm in width, 7 cm in length, and 1.5 cm in thickness.

Abstract: The present invention relates to an artificial marble including a binder resin, inorganic particles and quartz powder, in which the inorganic particles are particles including a barium element.

Abstract: Photoresist compositions may include a photosensitive polymer including a first repeating unit of Chemical Formula 1; a photoacid generator (PAG); and a solvent.

Abstract: The present invention relates to an artificial marble including one or more stripe regions and a base region on a first surface of the artificial marble, in which the stripe regions extend into the artificial marble, in which the artificial marble includes a section where a surface of the section corresponding to the first surface of the artificial marble is the stripe region and an inside of the artificial marble in a vertical direction under the stripe region is the base region, and in which at least a part of the base region of the section is visible to a naked eye from the surface of the stripe region.

Abstract: The present invention relates to an artificial marble including one or more stripe regions and a base region on a first surface of the artificial marble, in which the stripe regions extend into the artificial marble, in which the artificial marble includes a section where a surface of the section corresponding to the first surface of the artificial marble is the base region and an inside of the artificial marble in a vertical direction under the base region is the stripe region, and in which at least a part of the stripe region of the section is visible to a naked eye from the surface of the base region.

Abstract: Provided are photoresist compositions and methods of manufacturing an integrated circuit device by using the same. The photoresist compositions include a photosensitive polymer and a solvent, wherein the photosensitive polymer comprises a pyridinium salt and a functional group convertible (e.g., capable of being converted) to a radical and bonded to the pyridinium salt, and the functional group convertible to the radical comprises an oxygen atom, a nitrogen atom or a carbon atom bonded to a nitrogen atom of the pyridinium salt, and is able to generate the radical by decomposition of a bond between the oxygen atom, the nitrogen atom or the carbon atom of the functional group convertible to the radical and the nitrogen atom of the pyridinium salt.

Abstract: The present invention relates to an artificial marble including a first composition including a first binder resin, a first inorganic particle, and first inorganic powder; and a second composition including a second binder resin, a second inorganic particle, and second inorganic powder, wherein at least one surface of the artificial marble includes at least two regions among a region provided with the first composition, a region provided with the second composition, and a region where the first composition and the second composition are mixed, and at least one of a surface roughness, a scratch resistance, and a thickness in each of the at least two regions is different, and also relates to a method for manufacturing the artificial marble.

Abstract: A method of manufacturing a semiconductor device includes forming a memory stack on a cell wafer, the cell wafer having a first crystal orientation and including a silicon single crystal wafer and a first notch, forming a peripheral circuit stack on a peripheral circuit wafer, the peripheral circuit wafer including a silicon single crystal wafer and having a second crystal orientation different from the first crystal orientation, and bonding the cell wafer to the peripheral circuit wafer such that the memory stack and the peripheral circuit stack come into contact with each other, wherein the first crystal orientation is expressed as {first surface orientation}<first notch direction>, and the first crystal orientation includes any one of {110}<100>, {110}<112>, {111}<110>, and {111}<112>.

Abstract: An E-stone based artificial marble according to an exemplary embodiment of the present invention is formed of inorganic particles, inorganic powder, and a resin, wherein the resin is an E-stone based composition including a liquid resin and a solid powder resin or a cured product thereof.

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; source/drain patterns spaced apart in a first direction on the semiconductor substrate; and channel patterns on the semiconductor substrate, wherein at least one of the channel patterns is between adjacent source/drain patterns among the source/drain patterns, wherein at least one of the channel patterns includes a plurality of semiconductor patterns, and the plurality of semiconductor patterns are spaced apart from each other in a second direction that is perpendicular to an upper surface of the semiconductor substrate, wherein the semiconductor substrate includes a {110} crystal plane, wherein at least one of the channel patterns includes a surface pattern, wherein the surface pattern includes first surfaces and second surfaces, wherein the first surfaces include protruding edges, wherein the second surfaces are respectively connected to the first surfaces through protruding edges, and wherein the protruding edges are arranged in a th

Abstract: Provided is a photoresist composition including a chemically amplified polymer, a photoacid generator, a photo-decomposable quencher including a pyridinium-based material that generates a neutral material by exposure and acts as a base to neutralize an acid before exposure, and a solvent.

Abstract: The present invention relates to an artificial marble including a binder resin, inorganic particles and quartz powder, in which the inorganic particles are particles including a barium element.

Abstract: The present invention relates to an artificial marble including one or more stripe regions and a base region on a first surface of the artificial marble, in which the stripe regions extend into the artificial marble, in which the artificial marble includes a section where a surface of the section corresponding to the first surface of the artificial marble is the stripe region and an inside of the artificial marble in a vertical direction under the stripe region is the base region, and in which at least a part of the base region of the section is visible to a naked eye from the surface of the stripe region.

Abstract: The present invention relates to an artificial marble having a total transmittance of 6 or greater and 20 or less when the total transmittance is measured using a turbidimeter (NDH 5000 available from Nippon Denshoku) for an artificial marble sample with a size of 7 cm in width, 7 cm in length, and 1.5 cm in thickness.

Abstract: The present invention relates to an artificial marble including one or more stripe regions and a base region on a first surface of the artificial marble, in which the stripe regions extend into the artificial marble, in which the artificial marble includes a section where a surface of the section corresponding to the first surface of the artificial marble is the base region and an inside of the artificial marble in a vertical direction under the base region is the stripe region, and in which at least a part of the stripe region of the section is visible to a naked eye from the surface of the base region.

Abstract: The present invention relates to an artificial marble and a manufacturing method of an artificial marble. In addition, the present invention relates to a screening mask and a pattern mold for manufacturing the artificial marble.

Abstract: A brush polymer for a photoresist, a photoresist composition, and a method of manufacturing an integrated circuit device, the brush polymer including a core and a plurality of side polymer chains, the plurality of side polymer chains being bonded to the core and extending from the core to form a bottle-brush polymer or a star-brush polymer, together with the core, wherein each of the plurality of side polymer chains includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2:

Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,