Abstract: A photolithography method and a method of manufacturing a semiconductor device, the photolithography method including applying a composition on a substrate to form a photoresist layer; performing an exposing process using extreme ultraviolet radiation (EUV) on the photoresist layer; and developing the photoresist layer to form photoresist patterns, wherein the composition includes a photosensitive resin, a photo-acid generator, a photo decomposable quencher, an additive, and a solvent, and the additive is a compound represented by the following Formula 4A: in Formula 4A, R1 to R5 are each independently hydrogen or iodine, at least one of R1 to R5 being iodine.

Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.

Abstract: A photo-decomposable compound, a photoresist composition, and a method of manufacturing an IC device, the compound generating acid upon exposure and acts as a quenching base that neutralizes acid in an unexposed state and being represented by Formula 1: wherein, in Formula 1, Ra is a C5 to C40 substituted or unsubstituted cyclic hydrocarbon group including at least one nitrogen atom, Ya is a C1 to C20 divalent linear or cyclic hydrocarbon group, n is an integer of 1 to 5, and A+ is a counter ion.