Abstract: An image capturing optical system includes four lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element and a fourth lens element. The first lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof. The second lens element has positive refractive power. The third lens element with positive refractive power has an object-side surface being concave in a paraxial region thereof and an image-side surface being convex in a paraxial region thereof. The image capturing optical system further includes an aperture stop located between the second lens element and the third lens element.

Abstract: A method includes transporting a cleaning mask and a photomask into an enclosure of a lithography exposure apparatus, wherein the photomask includes a multilayered mirror structure, and the cleaning mask is free of the multilayered mirror structure; placing the cleaning mask on a reticle stage of the lithography exposure apparatus; and charging the cleaning mask to attract charged particles in the enclosure.

Abstract: The present disclosure relates to a polymer film comprising at least one first layer and at least one second layer, the first layer and the second layer each comprising a polyvinyl acetal resin and a plasticizer; wherein the polymer film has a first loss factor peak value at ?20° C. to 20° C., and a second loss factor peak value at 20° C. to 50° C.; wherein the polymer film has a loss factor valley value between the first loss factor peak value and the second loss factor peak value, the loss factor valley value is 0.15 to 0.45, and the loss factor of the polymer film at 10° C. is less than 0.5. The polymer film can still maintain good sound insulation performance at a specific ambient temperature and/or after a period of time.

Abstract: A semiconductor structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composite blocking layer. The buffer layer is on the substrate. The channel layer is on the buffer layer. The barrier layer is on the channel layer. The doped compound semiconductor layer is on the barrier layer. The composite blocking layer is on the doped compound semiconductor layer, the composite blocking layer and the barrier layer include the same Group III element, and the atomic percent of the same Group III element in the composite blocking layer increases with the distance from the doped compound semiconductor layer.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A display apparatus including a backlight module, first and second electrically-controlled elements, electrically-controlled first and second polarizers, a half-wave plate, and a display panel is provided. An included angle between first and second alignment directions of first and second alignment layers of the first electrically-controlled element is between 75 degrees and 105 degrees. An included angle between third and fourth alignment directions of third and fourth alignment layers of the second electrically-controlled element is between 165 degrees and 195 degrees. A first absorption axis of the first polarizer disposed between the backlight module and the first electrically-controlled element is perpendicular to a second absorption axis of the second polarizer disposed between the first and second electrically-controlled elements. The half-wave plate is disposed between the second polarizer and the second electrically-controlled element.

Abstract: A semiconductor device is provided, including a substrate, a seed layer on the substrate, an epitaxial layer on the seed layer, an electrode structure on the epitaxial layer and an electric field modulation structure. The electrode structure includes a gate structure, a source structure and a drain structure, wherein the source structure and the drain structure are positioned on opposite sides of the gate structure. The electric field modulation structure includes an electric connection structure and a conductive layer electrically connected to the electric connection structure. The conductive layer is positioned between the gate structure and the drain structure. The electric connection structure is electrically connected to the source structure and the drain structure.

Abstract: A semiconductor substrate is provided. The semiconductor substrate includes a ceramic base, a seed layer, and a nucleation layer. The ceramic base has a front surface and a back surface, and the front surface is a non-flat surface. The seed layer is disposed on the front surface of the ceramic substrate. The nucleation layer is disposed on the seed layer.

Abstract: A photographing lens assembly includes seven lens elements, which are, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. The first lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof. The second lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof. The seventh lens element has an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof. The image-side surface of the seventh lens element includes at least one convex shape in an off-axis region thereof. The object-side surface and the image-side surface of the seventh lens element are aspheric.

Abstract: An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Abstract: Provided is a cutting speed planning system including a graphic preprocessing engine, a first speed planning engine, an included angle calculation engine, a second speed planning engine and a speed determination engine. The graphic preprocessing engine substitutes a simplified cutting route for a plurality of short straight paths of a graphic path. The first speed planning engine calculates a reasonable maximum cutting speed of each cutting route. The included angle calculation engine calculates the included angle between two adjacent ones of the cutting routes. The second speed planning engine adjusts the terminal cutting speed and the initial cutting speed of the cutting routes. The speed determination engine performs speed planning on the cutting routes according to digital control system period time. A cutting speed planning method and a non-transitory storage medium are further provided.

Abstract: A backlight module including a circuit substrate, a plurality of light-emitting devices, a first cholesteric liquid-crystal layer, and a second cholesteric liquid-crystal layer is provided. The light-emitting devices are disposed on the circuit substrate and electrically connected to the circuit substrate. The first cholesteric liquid-crystal layer is disposed on the light-emitting devices and overlapped with a light-emitting surface of each of the light-emitting devices. The second cholesteric liquid-crystal layer is disposed on the first cholesteric liquid-crystal layer and overlapped with the first cholesteric liquid-crystal layer. The first cholesteric liquid-crystal layer and the second cholesteric liquid-crystal layer respectively have a first chiral direction and a second chiral direction. A display apparatus adopting the backlight module is also provided.

Abstract: A tunable light projector including a light source, a fixed optical phase modulator, and a tunable liquid crystal panel is provided. The light source is configured to emit a light beam, and the fixed optical phase modulator is disposed on a path of the light beam and configured to modulate phases of the light beam. The tunable liquid crystal panel is disposed on the path of the light beam and configured to be switched between a plurality of states, wherein the plurality of states include a lens array state in which the tunable liquid crystal panel comprises a lens array.

Abstract: A polymer film and laminated glass manufactured using the polymer film. The polymer film includes a first and second layer, and a third layer disposed between the first and second layers, and the two surfaces of the third layer are in contact with the first and second layers, respectively. The surface of the first layer that is not in contact with the third layer is a first surface, and the surface of the second layer not in contact with the third layer is a second surface, wherein the first surface has a void volume (Vv) value at a material ratio of 10% ranging from 3 ?m3/?m2 to 30 ?m3/?m2 and a dale void volume (Vvv) at a material ratio of 80% less than 2 ?m3/?m2, and the ratio of the maximum pit height (Sv) of the first surface to the thickness of the first layer is 0.2 or less.

Abstract: A polymer film and a laminated glass manufactured using the polymer film are provided. The polymer film has a first surface and a second surface, wherein the first surface has a standard deviation of a void volume (Vv) value at a material ratio of 10% ranging from 0.5 ?m3/?m2 to 2.5 ?m3/?m2, and wherein the material ratio and void volume are defined in accordance with ISO 25178-2:2012.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.

Abstract: In an embodiment, a device includes: a first die array including first integrated circuit dies, orientations of the first integrated circuit dies alternating along rows and columns of the first die array; a first dielectric layer surrounding the first integrated circuit dies, surfaces of the first dielectric layer and the first integrated circuit dies being planar; a second die array including second integrated circuit dies on the first dielectric layer and the first integrated circuit dies, orientations of the second integrated circuit dies alternating along rows and columns of the second die array, front sides of the second integrated circuit dies being bonded to front sides of the first integrated circuit dies by metal-to-metal bonds and by dielectric-to-dielectric bonds; and a second dielectric layer surrounding the second integrated circuit dies, surfaces of the second dielectric layer and the second integrated circuit dies being planar.

Abstract: A display device includes a view angle switching module and a display module. The view angle switching module includes a first polarizer and a view angle adjustment layer. The display module and the view angle switching module are overlapped. The display module includes a display layer and a second polarizer. The view angle adjustment layer is located between the first polarizer and the second polarizer. An average degree of polarization of the first polarizer for light with a wavelength falling within a first wavelength band is less than an average degree of polarization of the second polarizer for the light with the wavelength falling within the first wavelength band. The display device may provide a privacy function and images with good image quality.

Abstract: A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.