Abstract: A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.

Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) pad, and an associated method to perform a CMP process. In some embodiments, the CMP pad comprises a polishing layer having a front surface with protruding asperities while a back surface being planar. A film electrode is attached to the back surface of the polishing layer and is isolated from the front surface of the polishing layer.

Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) system, and an associated method to perform a CMP process. In some embodiments, the CMP system has a rotatable wafer carrier configured to hold a wafer face down to be processed. The CMP system also has a polishing layer attached to a polishing platen and having a front surface configured to interact with the wafer to be processed, and a CMP dispenser configured to dispense a slurry between an interface of the polishing layer and the wafer. The slurry contains charged abrasive particles therein. The CMP system also has a film electrode attached to a back surface of the polishing layer opposite to the front surface. The film electrode is configured to affect movements of the charged abrasive particles through applying an electrical field during the operation of the CMP system.

Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

Abstract: A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

Abstract: A representative device includes a patterned opening through a layer at a surface of a device die. A liner is disposed on sidewalls of the opening and the device die is patterned to extend the opening further into the device die. After patterning, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.

Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) system, and an associated method to perform a CMP process. In some embodiments, the CMP system has a rotatable wafer carrier configured to hold a wafer face down to be processed. The CMP system also has a polishing layer attached to a polishing platen and having a front surface configured to interact with the wafer to be processed, and a CMP dispenser configured to dispense a slurry between an interface of the polishing layer and the wafer. The slurry contains charged abrasive particles therein. The CMP system also has a film electrode attached to a back surface of the polishing layer opposite to the front surface. The film electrode is configured to affect movements of the charged abrasive particles through applying an electrical field during the operation of the CMP system.

Abstract: A semiconductor device includes a first bottom electrode, a second bottom electrode, a switching layer and a top electrode. The first bottom electrode has two edges opposite to each other, and an upper surface. The second bottom electrode is between the edges of the first bottom electrode and exposed from the upper surface of the first bottom electrode. The switching layer is over the first bottom electrode and the second bottom electrode. The top electrode is over the switching layer.

Abstract: A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

Abstract: A semiconductor device includes a first bottom electrode, a second bottom electrode, a switching layer and a top electrode. The first bottom electrode has two edges opposite to each other, and an upper surface. The second bottom electrode is between the edges of the first bottom electrode and exposed from the upper surface of the first bottom electrode. The switching layer is over the first bottom electrode and the second bottom electrode. The top electrode is over the switching layer.

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

Abstract: A method includes placing a first wafer onto a surface of a first wafer chuck, the first wafer chuck including multiple first profile control zones separated by one or more shared flexible membranes. The method also includes setting a first profile of the surface of the first wafer chuck. Setting a first profile of the surface of the first wafer chuck includes adjusting a first volume of a first profile control zone of the multiple first profile control zones. Setting a first profile of the surface of the first wafer chuck also includes adjusting a second volume of a second profile control zone of the multiple first profile control zones, the first volume of the first profile control zone being adjusted independently from the second volume of the second profile control zone, and the second adjustable volume encircling the first adjustable volume.

Abstract: A memory device includes a dielectric structure, a tungsten plug, a bottom electrode, a resistance switching element and a top electrode. The dielectric structure has an opening. The tungsten plug is embedded in the opening of the dielectric structure. The bottom electrode extends along top surfaces of the dielectric structure and the tungsten plug. The resistance switching element is present over the bottom electrode. The top electrode is present over the resistance switching element.

Abstract: A memory device includes a dielectric structure, a tungsten plug, a bottom electrode, a resistance switching element and a top electrode. The dielectric structure has an opening. The tungsten plug is embedded in the opening of the dielectric structure. The bottom electrode extends along top surfaces of the dielectric structure and the tungsten plug. The resistance switching element is present over the bottom electrode. The top electrode is present over the resistance switching element.

Abstract: A representative device includes a patterned opening through a layer at a surface of a device die. A liner is disposed on sidewalls of the opening and the device die is patterned to extend the opening further into the device die. After patterning, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.

Abstract: A representative device includes a patterned opening through a layer at a surface of a device die. A liner is disposed on sidewalls of the opening and the device die is patterned to extend the opening further into the device die. After patterning, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.

Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

Abstract: A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.