Abstract: The present invention provides a positive-tone photosensitivity resin composition comprising (A) an alkali-soluble acrylic resin, the alkali-soluble acrylic resin containing at least one structure unit selected from the group consisting of the following structure unit (1), structure unit (2), and structure unit (3), wherein R1, R2, R3, R4, R5, R, U, V, X, Y and Z are defined the same as the specification; (B) a naphthoquinone-diazide group containing compound; and (C) an solvent, the solvent is selected from the group consisting of ethers, ketones, esters, aromatic hydrocarbons and acetoacetates.

Abstract: The present invention discloses a compound having the following formula (I), wherein R1 is H, haloalkyl group or C1-C4 alkyl group; R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. This compound is a monomer and suitable for synthesis to form polymers with good hydrophilicity, adhesion and dry-etch resistance. Particularly, this compound can form photosensitive polymers or copolymers by reacting with suitable photosensitive monomers.

Abstract: The present invention discloses a chemical amplified photoresist composition including a polymer having a repeated unit of the formula (II), wherein R1 is H, haloalkyl group or C1-C4 alkyl group; R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. The chemical amplified photoresist composition of the present invention can be applied to general lithography processes, and particularly to the lithography of ArF, KrF or the like light sources, and exhibit excellent resolution, figures and photosensitivity.

Abstract: The present invention discloses a chemical amplified photoresist composition including a polymer having a repeated unit of the formula (II), 1

Abstract: The present invention discloses a compound having the following formula (I), 1

Abstract: The present invention discloses a polymer having a repeated unit of the formula (II), wherein R1 is H, haloalkyl group or C1-C4 alkyl group; R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. The polymer of the present invention can be used to form the chemical amplified photoresist composition, which can then be applied to general lithography processes, and particularly to the lithography of ArF, KrF or the like light source, and exhibit excellent resolution, figures and photosensitivity.

Abstract: The present invention provides a photosensitive polymer containing the following structure unit of formula (II): Wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This photosensitive polymer also relates to chemical amplified photoresist composition. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist composition exhibit excellent resolution and photosensitivity.

Abstract: An alicyclic compound of the formula (1) is disclosed: wherein R1 and R2 each independently is a hydroxyl group, a C1-8 hydroxyalkyl group, or a C3-8 hydroxycycloalkyl group; R3, R4 and R5 each independently is a hydrogen, a C1-8 hydroxyalkyl group, a C1-6 carboxylic acid or a C3-8 carboxylic acid ester; k is an integer of 0, 1, 2, 3, 4, 5 or 6. The compound of the formula (1) can be applied to dissolution inhibitors for preparing positive photoresist composition.

Abstract: A chemical amplified photoresist composition comprising a photosensitive polymer containing the following structure unit of formula (II): Wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist exhibit excellent resolution and photosensitivity.

Abstract: A positive photoresist composition comprising a polymer, a photoactived agent and an dissolution inhibitor represented by the following formula (1): wherein R1, R2, R3, R4, R5 and k are defined in the specification. The photoresist composition of the present invention is useful as a chemically amplified type resist when exposed to deep UV light from a KrF and ArF excimer laser.

Abstract: This invention provides a compound of the formula (I): wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. The compound of formula (I) can be polymerized or copolymerized to form a photosensitive polymer or copolymer.

Abstract: A positive photoresist composition comprising a polymer, a photoactived agent and an dissolution inhibitor represented by the following formula (1): wherein R1 and R2 each independently is a hydroxyl group, a C1-8 hydroxyalkyl group, or a C3-8 hydroxycycloalkyl group; R3, R4 and R5 each independently is a hydrogen, a C1-8 hydroxyalkyl group, a C1-6 carboxylic acid or a C3-8 carboxylic acid ester; k is an integer of 0, 1, 2, 3, 4, 5 or 6. The photoresist composition has high transparency to deep UV light and is capable of forming good fine patterns, roughness and high sensitivity, thus being useful as a chemically amplified type resist when exposed to deep UV light from an KrF and ArF excimer laser.