Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.

Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned over the upper surface in a periodic manner, a first conductive type semiconductor layer positioned over the substrate, a light-emitting structure positioned over the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned over the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.

Abstract: Electric shock to a user has been a major concern for a conventional electric water heater installed in or near a bathroom. An electrically insulated air-conducting water heater utilizes electrically insulating hot air to indirectly heat water to avoid electric hazard to a user of an electric water heater. The present invention comprises an air pump unit, a heating and temperature control unit, and an air venting unit having a plurality of tiny air nozzles immersed in a water pool. Ambient air is collected by the air pump unit, heated in the heating and temperature control unit, and injected into a water pool through the air venting unit as a form of zillions of small hot bubbles to heat the water. Apart from serving as an electrically safe water heater, the present invention also functions as a hot-bubble sauna machine, bathroom body dryer, and air conditioner.

Abstract: A method comprises providing first and second semiconductor devices. Each device comprises a transistor having a split gate electrode including first and second gate portions. Each device has a respective ratio between an area of its first gate portion and a sum of areas of its first and second gate portions. For each device, a stress voltage is applied to the first gate portion, but not to the second gate portion. For each device, the first and second gate portions are biased with a common voltage, and data are collected indicating a respective degradation for each device due to the stress voltage. The degradation has a component due to time dependent dielectric breakdown (TDDB) and a component due to bias temperature instability. From the collected data extrapolation determines the degradation component due to TDDB.

Abstract: A laser-wavelength conversion system with a broad temperature acceptance bandwidth is provided. The laser system includes a broad-band pump laser driving one or several cascaded laser wavelength converters, wherein the pump laser spectrum is broader than the spectral acceptance bandwidth of at least one of the laser wavelength converters. The broad pump laser spectrum allows some temperature variation in the laser wavelength converters, resulting in a broad temperature acceptance for the whole laser system. The laser system provides stable multi-color laser radiation for applications such as the red-green-blue laser projection TV.

Abstract: Some embodiments regard a memory array that has a plurality of eFuse memory cells arranged in rows and columns, a plurality of bit lines, and a plurality of word lines. A column includes a bit line selector, a bit line coupled to the bit line selector, and a plurality of eFuse memory cells. An eFuse memory cell of the column includes a PMOS transistor and an eFuse. A drain of the PMOS transistor is coupled to a first end of the eFuse. A gate of the PMOS transistor is coupled to a word line. A source of the PMOS transistor is coupled to the bit line of the column.

Abstract: The configurations of an electro-optic Bragg deflector and the methods of using it as a laser Q-switch in a Q-switched laser and in a Q-switched wavelength-conversion laser are provided. As a first embodiment, the electro-optic Bragg deflector comprises an electrode-coated electro-optic material with one of a 1D and a 2D spatially modulated electro-optic coefficient. When a voltage is supplied to the electrodes, the electro-optic material behaves like a Bragg grating due to the electro-optically induced spatial modulation of the refractive index. The second embodiment relates to an actively Q-switched laser, wherein the electro-optic Bragg deflector functions as a laser Q-switch. The third embodiment of the present invention combines the Q-switched laser and a laser-wavelength converter to form a Q-switched wavelength-conversion laser, wherein the EO Bragg deflector can be monolithically integrated with a quasi-phase-matching wavelength converter in a fabrication process.

Abstract: Some embodiments regard a memory array that has a plurality of eFuse memory cells arranged in rows and columns, a plurality of bit lines, and a plurality of word lines. A column includes a bit line selector, a bit line coupled to the bit line selector, and a plurality of eFuse memory cells. An eFuse memory cell of the column includes a PMOS transistor and an eFuse. A drain of the PMOS transistor is coupled to a first end of the eFuse. A gate of the PMOS transistor is coupled to a word line. A source of the PMOS transistor is coupled to the bit line of the column.

Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. In one embodiment of the present disclosure, each of the bumps has a top plane substantially parallel to the upper surface, the first conductive type semiconductor layer has a plurality of protrusions each facing a portion of the substrate between the bumps, and the protrusions are spaced apart from the bumps.

Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.

Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. In one embodiment of the present disclosure, each of the bumps has a top plane substantially parallel to the upper surface, the first conductive type semiconductor layer has a plurality of protrusions each facing a portion of the substrate between the bumps, and the protrusions are spaced apart from the bumps.

Abstract: The configurations of an electro-optic Bragg deflector and the methods of using it as a laser Q-switch in a Q-switched laser and in a Q-switched wavelength-conversion laser are provided. As a first embodiment, the electro-optic Bragg deflector comprises an electrode-coated electro-optic material with one of a 1D and a 2D spatially modulated electro-optic coefficient. When a voltage is supplied to the electrodes, the electro-optic material behaves like a Bragg grating due to the electro-optically induced spatial modulation of the refractive index. The second embodiment relates to an actively Q-switched laser, wherein the electro-optic Bragg deflector functions as a laser Q-switch. The third embodiment of the present invention combines the Q-switched laser and a laser-wavelength converter to form a Q-switched wavelength-conversion laser, wherein the EO Bragg deflector can be monolithically integrated with a quasi-phase-matching wavelength converter in a fabrication process.

Abstract: An electron radiation apparatus is provided. The electron radiation apparatus includes a beat-wave laser system generating a laser beat wave, an electron emitter emitting a density-modulated electron current induced by the laser beat wave, an electron accelerator accelerating the density-modulated electron current and generating a periodically bunched electron beam, and a radiation device receiving the periodically bunched electron beam and generating an electron radiation with a radiation frequency matched to one of the harmonics of the bunching frequency of the periodically bunched electron beam.

Abstract: The configurations of an electro-optic Bragg deflector and the methods of using it as a laser Q-switch in a Q-switched laser and in a Q-switched wavelength-conversion laser are provided. As a first embodiment of the present invention, the electro-optic Bragg deflector comprises an electrode-coated electro-optic material with a spatially modulated electro-optic coefficient. When a voltage is supplied to the electrodes, the electro-optic material behaves like a Bragg grating due to the electro-optically induced spatial modulation of the refractive index. The second embodiment of the present invention relates to an actively Q-switched laser, wherein the electro-optic Bragg deflector functions as a laser Q-switch. The third embodiment of the present invention combines the Q-switched laser and a laser-wavelength converter to form a Q-switched wavelength-conversion laser, wherein the EO Bragg deflector can be monolithically integrated with a quasi-phase-matching wavelength converter in a fabrication process.

Abstract: An electron radiation apparatus is provided. The electron radiation apparatus includes a beat-wave laser system generating a laser beat wave, an electron emitter emitting a density-modulated electron current induced by the laser beat wave, an electron accelerator accelerating the density-modulated electron current and generating a periodically bunched electron beam, and a radiation device receiving the periodically bunched electron beam and generating an electron radiation with a radiation frequency matched to one of the harmonics of the bunching frequency of the periodically bunched electron beam.

Abstract: A Q-switched laser system is disclosed. The laser system employs a quasi-phase-matched electro-optic (QPM EO) crystal as the laser Q-switch. When applied with a certain modulating electric field, the QPM EO crystal can function as a polarization rotator to rotate the polarization direction of the resonant laser beam in a polarization-dependent laser resonator, thereby switching the laser resonator between high-loss and low-loss cavity states to achieve laser Q-switching. Compared with traditional electro-optic Q-switched laser system, the disclosed laser system is characterized by a low switching-voltage, reduced cost, and compactness. A quasi-phase-matched electro-optically Q-switched wavelength-conversion and wavelength-tunable laser system is also disclosed. The disclosed laser system integrates a QPM electro-optic Q-switch and a QPM nonlinear wavelength converter in a single crystal substrate to perform a high-efficiency intracavity wavelength conversion.

Abstract: A flashlight includes a main member having top, a bottom, a front and a rear. The main member has a base a head and battery pack, wherein the head is pivoted on the base via a pivot to be flexed to the front. A first light source and a second light source are mounted on the head, wherein the second light source projects light that is substantially to that of the first light source. A hook is provided in a tunnel in the base to be drawn out or pushed into. The first and second light sources and the flexion of the head provide a greater illumination range and a function of adjusting the illuminating direction when it is hung.

Abstract: A flashlight includes a main member having top, a bottom, a front and a rear. The main member has a base a head and battery pack, wherein the head is pivoted on the base via a pivot to be flexed to the front. A first light source and a second light source are mounted on the head, wherein the second light source projects light that is substantially to that of the first light source. A hook is provided in a tunnel in the base to be drawn out or pushed into. The first and second light sources and the flexion of the head provide a greater illumination range and a function of adjusting the illuminating direction when it is hung.

Abstract: A Q-switched laser system is disclosed. The laser system employs a quasi-phase-matched electro-optic (QPM EO) crystal as the laser Q-switch. When applied with a certain modulating electric field, the QPM EO crystal can function as a polarization rotator to rotate the polarization direction of the resonant laser beam in a polarization-dependent laser resonator, thereby switching the laser resonator between high-loss and low-loss cavity states to achieve laser Q-switching. Compared with traditional electro-optic Q-switched laser system, the disclosed laser system is characterized by a low switching-voltage, reduced cost, and compactness. A quasi-phase-matched electro-optically Q-switched wavelength-conversion and wavelength-tunable laser system is also disclosed. The disclosed laser system integrates a QPM electro-optic Q-switch and a QPM nonlinear wavelength converter in a single crystal substrate to perform a high-efficiency intracavity wavelength conversion.