Abstract: A semiconductor structure having an epitaxial structure is provided. The semiconductor structure includes a first fin and a second fin on a semiconductor substrate. The semiconductor structure also includes an isolation feature over the semiconductor substrate to surround the first fin and the second fin. The semiconductor structure further includes an epitaxial structure on the first fin and the second fin. In addition, the semiconductor structure includes outer spacers on opposite sides of the epitaxial structure. The semiconductor structure also includes an inner spacer structure between the first fin and the second fin, wherein the inner spacer structure has a U-shape and covers a sidewall of the epitaxial structure.

Abstract: A pixel circuit includes at least one pixel. The at least one pixel includes a first light emitting diode, a second light emitting diode, and a third light emitting diode. A first terminal of the first light emitting diode is configured to receive a voltage signal. A second terminal of the first light emitting diode is configured to receive a first current signal. A first terminal of the second light emitting diode is configured to receive the voltage signal. A second terminal of the second light emitting diode is configured to receive a second current signal. A first terminal of the third light emitting diode is configured to receive the voltage signal. A second terminal of the third light emitting diode is configured to receive a third current signal.

Abstract: A semiconductor structure having epitaxial structures and a method for forming the same are provided. The method includes forming a gate structure over first and second fins on a semiconductor substrate. The method also includes forming a first dielectric material over the first and second fins and the gate structure. The method further includes forming a second dielectric material over the first dielectric material and above an interspace between the first and the second fins. The method includes partially removing the first dielectric material and the second dielectric material to form an inner spacer structure between the first fin and the second fin and outer spacers on two opposite sides of the inner spacer structure, wherein a top surface of the inner spacer structure is below top surfaces of the outer spacers. The method also includes forming an epitaxial structure on the first fin and the second fin.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a 3D metal insulator metal (MIM) capacitor structure with an increased capacitance per unit area in a semiconductor structure. The MIM structure includes a substrate, an oxide layer formed over the substrate, and a first metal layer formed over the oxide layer. The first metal layer includes a plurality of mandrels formed on a surface of the first metal layer. The MIM structure also includes a dielectric layer formed over the first metal layer and the plurality of mandrels, a second metal layer formed over on the dielectric layer, and one or more interconnect structures electrically connected to the first and second metal layers.

Abstract: A semiconductor structure having epitaxial structures and a method for forming the same are provided. The method includes forming a gate structure over first and second fins on a semiconductor substrate. The method also includes forming a first dielectric material over the first and second fins and the gate structure. The method further includes forming a second dielectric material over the first dielectric material and above an interspace between the first and the second fins. The method includes partially removing the first dielectric material and the second dielectric material to form an inner spacer structure between the first fin and the second fin and outer spacers on two opposite sides of the inner spacer structure, wherein a top surface of the inner spacer structure is below top surfaces of the outer spacers. The method also includes forming an epitaxial structure on the first fin and the second fin.

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature..

Abstract: A surveillance camera device receives power transmitted from an external power source and includes a camera for capturing images, a cable module coupled to the camera and the external power source, a casing disposed on the cable module, a temperature/moisture sensor and a circuit board. The temperature/moisture sensor is disposed in the casing for detecting a temperature/moisture value. The circuit board is disposed in the casing. The circuit board is coupled to the temperature/moisture sensor and coupled to the camera and the external power source via the cable module for transmitting the power transmitted from the external power source and the temperature/moisture value transmitted from the temperature/moisture sensor to the camera via the cable module.

Abstract: A video doorbell system coupled with a ringtone generating unit is applied by a power supply adjusting method and includes a video generating module and a mode switching controller. The video generating module includes a power storing component. The mode switching controller can be switched into a first mode or a second mode in a remote controlling manner. While the mode switching controller is switched into the first mode, the ringtone generating unit is bypassed and an external power source is connected to the video generating module, so as to charge the power storing component by the external power source. While the mode switching controller is switched into the second mode, the video generating module is bypassed and the external power source is connected to the ringtone generating unit, and the video generating module can execute image capturing function via the power storing component.

Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.

Abstract: A surveillance camera device receives power transmitted from an external power source and includes a camera for capturing images, a cable module coupled to the camera and the external power source, a casing disposed on the cable module, a temperature/moisture sensor and a circuit board. The temperature/moisture sensor is disposed in the casing for detecting a temperature/moisture value. The circuit board is disposed in the casing. The circuit board is coupled to the temperature/moisture sensor and coupled to the camera and the external power source via the cable module for transmitting the power transmitted from the external power source and the temperature/moisture value transmitted from the temperature/moisture sensor to the camera via the cable module.

Abstract: A high-efficiency non-collinearly phase matched parametric oscillator is provided, wherein a laser pumps a nonlinear optical material with a plural number of flat reflection surfaces that zigzag at least one parametrically generated off-axis radiation about the pump laser beam axis via multiple reflections from the surfaces. The off-axis zigzag oscillation of the radiation establishes parametric oscillation and improves energy coupling among mixing waves in a monolithic nonlinear optical material. Preferably the pump laser has a transverse beam size covering the area of the zigzagging parametrically generated radiation. To further enhance the performance of the off-axis zigzag parametric oscillator, the other parametrically generated radiation can be seeded by an external laser source or resonated in a cavity. The present invention also includes a double-side pumped off-axis zigzag parametric oscillator installed inside a standing-wave pump-laser cavity.

Abstract: A video doorbell system coupled with a ringtone generating unit is applied by a power supply adjusting method and includes a video generating module and a mode switching controller. The video generating module includes a power storing component. The mode switching controller can be switched into a first mode or a second mode in a remote controlling manner. While the mode switching controller is switched into the first mode, the ringtone generating unit is bypassed and an external power source is connected to the video generating module, so as to charge the power storing component by the external power source. While the mode switching controller is switched into the second mode, the video generating module is bypassed and the external power source is connected to the ringtone generating unit, and the video generating module can execute image capturing function via the power storing component.

Abstract: A method comprises providing first and second semiconductor devices. Each device comprises a transistor having a split gate electrode including first and second gate portions. Each device has a respective ratio between an area of its first gate portion and a sum of areas of its first and second gate portions. For each device, a stress voltage is applied to the first gate portion, but not to the second gate portion. For each device, the first and second gate portions are biased with a common voltage, and data are collected indicating a respective degradation for each device due to the stress voltage. The degradation has a component due to time dependent dielectric breakdown (TDDB) and a component due to bias temperature instability. From the collected data extrapolation determines the degradation component due to TDDB.

Abstract: An antenna system that generates radiation similar to that generated by a relativistic charged particle is provided. The antenna system includes a conducting wire carrying a current pulse with a net charge, called a quasi charged particle, which propagates near the speed of light and emits radiation. Preferably, the quasi charged particle is generated by using a pulsed laser to knock out electrons from the conducting wire. While propagating on the conducting wire near the speed of light, the quasi charged particle generates a synchrotron like radiation from a bent of the wire, an undulator like radiation from a sinusoidal or helical structure of the wire, a diffraction like radiation from an aperture transmitting the wire, a Smith-Purcell like radiation from a corrugated grating surface next to the wire, and a greatly wavelength-contracted undulator like radiation from an undulator with the wire aligned along the undulator axis.

Abstract: A method comprises providing first and second semiconductor devices. Each device comprises a transistor having a split gate electrode including first and second gate portions. Each device has a respective ratio between an area of its first gate portion and a sum of areas of its first and second gate portions. For each device, a stress voltage is applied to the first gate portion, but not to the second gate portion. For each device, the first and second gate portions are biased with a common voltage, and data are collected indicating a respective degradation for each device due to the stress voltage. The degradation has a component due to time dependent dielectric breakdown (TDDB) and a component due to bias temperature instability. From the collected data extrapolation determines the degradation component due to TDDB.

Abstract: A method comprises providing first and second semiconductor devices. Each device comprises a transistor having a split gate electrode including first and second gate portions. Each device has a respective ratio between an area of its first gate portion and a sum of areas of its first and second gate portions. For each device, a stress voltage is applied to the first gate portion, but not to the second gate portion. For each device, the first and second gate portions are biased with a common voltage, and data are collected indicating a respective degradation for each device due to the stress voltage. The degradation has a component due to time dependent dielectric breakdown (TDDB) and a component due to bias temperature instability. From the collected data extrapolation determines the degradation component due to TDDB.

Abstract: An antenna system that generates radiation similar to that generated by a relativistic charged particle is provided. The antenna system includes a conducting wire carrying a current pulse with a net charge, called a quasi charged particle, which propagates near the speed of light and emits radiation. Preferably, the quasi charged particle is generated by using a pulsed laser to knock out electrons from the conducting wire. While propagating on the conducting wire near the speed of light, the quasi charged particle generates a synchrotron like radiation from a bent of the wire, an undulator like radiation from a sinusoidal or helical structure of the wire, a diffraction like radiation from an aperture transmitting the wire, a Smith-Purcell like radiation from a corrugated grating surface next to the wire, and a greatly wavelength-contracted undulator like radiation from an undulator with the wire aligned along the undulator axis.

Abstract: A network camera with an iris detection function and an iris detection method are provided. The network camera may include a machine body connected to a first iris or a second iris. The machine body may include a detection unit, a test signal generation unit, and a processing unit. The detection unit may include a test signal output terminal and a test signal receiving terminal. The test signal generation unit electrically connected to the detection unit may generate a first test signal and output the first test signal to the first iris or the second iris through the test signal output terminal. The test signal receiving terminal may receive a second test signal from the first iris or the second iris. The processor unit connected to the detection unit may generate a warning signal according to the second test signal.

Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.

Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned over the upper surface in a periodic manner, a first conductive type semiconductor layer positioned over the substrate, a light-emitting structure positioned over the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned over the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.