Abstract: Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

Abstract: Disclosed is a TSV structure having insulating layers with embedded voids, including a chip layer, a dielectric liner and a conductive filler. There is at least a via reentrant from one surface of the semiconductor body of the chip layer. A plurality of air-gap cavities are formed on the sidewall of the via where the cavities have a depth-to-width ratio not less than one. The dielectric liner covers the sidewall of the via without filling into the air-gap cavities. The conductive filler is disposed in the via without filling into the air-gap cavities due to the isolation of the dielectric liner so as to form an air insulating layer with a plurality of enclosed voids embedded between the semiconductor body and the dielectric liner. Accordingly, RC Delay of the TSV structure can be improved.

Abstract: The present invention provides a drilling apparatus and a method thereof capable of providing an adjustable active backup force to a composite workpiece to effectively reduce the delamination of the workpiece during drilling such that the application of the active backup force in terms of its force magnitude and its application location on the workpiece can adjustably counter the drill thrust force to retard the onset of delamination growth and reduce delamination damage at the drill exit in the workpiece, in particular in situation where large feed rate with short cycle time is desired for drilling of composite materials. A critical drill thrust force of the drilling apparatus and the method of the present invention is advantageously obtained in relation to said active backup force and the application of the active backup force to reduce the crack propagation of the delamination occurred in the composite workpiece.

Abstract: A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract: Disclosed is a fabrication process of fabricating bumps aligned on TSVs on chip backside. A plurality of TSV pillars are embedded inside the semiconductor layer of an IC substrate where the sidewalls the bottom of the TSV pillars toward the chip backside are covered by a dielectric liner. Then, the thickness of the semiconductor layer is reduced from the chip backside to make the bottom portion of the dielectric liner to be exposed from the chip backside by including a first selectively etching. Then, a backside passivation is disposed on the chip backside without disposing on the bottoms of the TSV pillars. Then, the bottom portion of the dielectric liner is removed by a second selectively etching. An UBM layer is disposed on the backside passivation. A plurality of bumps are disposed on the UBM layer where the interface between each bump and each TSV pillar is a central protrusion lumped toward the corresponding bump.

Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract: A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract: An analysis method for a regional image is disclosed for an image datum from a C-arm device. The analysis method includes: providing an indication module, reading the image datum, selecting a plurality of ROIs (Regions of Interest), calculating an average brightness of each of the ROIs, searching every of the steel ball image data, comparing each of the steel ball image data and analyzing each of the steel ball image data. By individually analyzing the regional image datum, the brighter or darker image signal can be excluded so that it can improve precision during searching the steel ball image data. Moreover, it is also more effective for comparing an image profile of the steel ball image datum with a real profile of the steel ball of the indication module. Thus, the steel ball image can be readily defined by its correspondence with the steel ball of the indication module.

Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract: A decoration plate and an electronic device using the same are provided. The decoration plate includes a structure layer and a light source layer. The structure layer has an inner surface and an outer surface and is provided with a plurality of prisms. The light source layer is formed on the inner surface side of the structure layer. The prisms are distributed to form a predetermined pattern. After entering into the structure layer from the light source layer, the light leaves the structure layer from the area covered by the predetermined pattern on the outer surface. Since the light is split into several beams with different exit angles, the area covered by the predetermined pattern will exhibit different visual effect from other area.

Abstract: A surgical tool calibrating device for calibrating a surgical tool is provided. The surgical tool calibrating device includes a calibration block, an electronic sensing module, a diameter measurement module, and a signal communication module. The calibration block has a tool inserting portion in which the surgical tool can be inserted. The electronic sensing module is disposed on the bottom of the tool inserting portion for sensing the tip of the surgical tool and generating a measuring signal accordingly. The diameter measurement module is mounted around the tool inserting portion. The diameter measurement module is actuated to sense the surgical tool and measure the diameter of the surgical tool upon reception of the measuring signal. The signal communication module is electrically connected to the electronic sensing module and the diameter measurement module for transmitting the measuring signal.

Abstract: A surgical tool calibrating device having an electronic sensing module is provided. The surgical tool calibrating device includes a calibration block, an electronic sensing module, and a signal communication module. The calibration block has at least one tool inserting portion, and the electronic sensing module is disposed on the bottom of the said tool inserting portion for generating an activating signal. The signal communication module is electrically connected to the electronic sensing module for transmitting the activating signal. With the electronic sensing module being provided in the calibration block, the activating signal is generated immediately when a surgical tool is inserted into the calibration block and makes contact with the electronic sensing module. Thus, the surgical tool calibrating device is activated in real time so as to determine the length of and the suitable bore diameter for the surgical tool.

Abstract: An analysis method for a regional image is disclosed for an image datum from a C-arm device. The analysis method includes: providing an indication module, reading the image datum, selecting a plurality of ROIs (Regions of Interest), calculating an average brightness of each of the ROIs, searching every of the steel ball image data, comparing each of the steel ball image data and analyzing each of the steel ball image data. By individually analyzing the regional image datum, the brighter or darker image signal can be excluded so that it can improve precision during searching the steel ball image data. Moreover, it is also more effective for comparing an image profile of the steel ball image datum with a real profile of the steel ball of the indication module. Thus, the steel ball image can be readily defined by its correspondence with the steel ball of the indication module.

Abstract: A method for image positioning is provided. The method is configured for positioning image data captured by a C-arm device and includes the steps of: providing an indication module, providing a database, reading the image data, comparing the image data, deriving a coordinate conversion system, and calculating the image data. Steel balls in the indication module have known template coordinates. Plural sets of template triangle data, each set composed by three of the steel balls, are stored in the database. Steel ball image data presented in the image data form indication triangle data. The indication triangle data are compared with the template triangle data to produce comparison results. The coordinate conversion system is derived from the comparison result with the highest similarity. Thus, image coordinates in the image data can be converted into and from the template coordinates via the coordinate conversion system, allowing the image to be orientated precisely.

Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract: A method of forming an electrical connection structure is described. A dielectric layer is formed covering a first conductor on a substrate, and then an opening is formed in the dielectric layer exposing the first conductor. A first cleaning step is conducted using fluorine-containing plasma to clean the surfaces of the dielectric layer and the exposed first conductor, and then at least one low-temperature annealing step is conducted. A second cleaning step is conducted using argon plasma to clean the above surfaces. A second conductor is then formed in the opening.

Abstract: A method of forming a shallow trench isolation structure includes steps of providing a substrate having a patterned mask layer formed thereon, wherein a trench is located in the substrate and the patterned mask layer exposes the trench. Thereafter, a dielectric layer is formed over the substrate to fill the trench. Then, a main polishing process with a first polishing rate is performed to remove a portion of the dielectric layer. An assisted polishing process is performed to remove the dielectric layer and a portion of the mask layer. The assisted polishing process includes steps of providing a slurry in a first period of time and then providing a solvent and performing a polishing motion of a second polishing rate in a second period of time. The second polishing rate is slower than the first polishing rate. Further, the mask layer is removed.

Abstract: A complex chemical mechanical polishing process for planarizing a structure. The process comprises steps of performing a main polishing process with a first polishing rate, wherein a slurry is provided. An assisted polishing process is then performed to planarizing the structure. The assisted polishing process comprises steps of providing the slurry in a first period of time and then providing a solvent and performing a polishing motion of a second polishing rate in a second period of time. The second polishing rate is slower than the first polishing rate.