Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer over the substrate, a first photodiode and a second photodiode in the first epitaxial layer, and a trench isolation structure between the first photodiode and the second photodiode. The first photodiode includes a first doped region having a first conductivity type. The first photodiode includes a second doped region, overlying the first doped region, having a second conductivity type different than the first conductivity type. The first photodiode includes a third doped region, overlying the first doped region, having the second conductivity type. A first distance between a sidewall of the third doped region and an uppermost surface of the first epitaxial layer is between about a hundredth to about a fifth of a second distance between a sidewall of the trench isolation structure and the uppermost surface of the first epitaxial layer.

Abstract: A laptop computer including a system host, a modular platform, a rail structure, and at least one tool is provided. The rail structure is disposed at the system host and the modular platform, and the modular platform slides relative to the system host via the rail structure to be assembled to or detached from the system host. The tool is plugged into or out of the system host, and the tool is located on a sliding path of the modular platform when the tool is assembled to the system host.

Abstract: A gait evaluating system including a processor is provided. The processor identifies whether a gait type of the user belongs to a normal gait, a non-neuropathic gait or a neuropathic gait based on step feature values of a user and walking limb feature values of the user. In response to that the gait type of the user belongs to the non-neuropathic gait, the processor controls the display panel to display a first auxiliary information, a second auxiliary information, and a third auxiliary information. The first auxiliary information indicates a potential sarcopenia of the user. The second auxiliary information indicates a dietary guideline for muscle building and muscle strengthening. The third auxiliary information shows a motion instruction video for regaining or maintaining muscle strength of the user.

Abstract: In some embodiments, the present disclosure relates to an image sensor including a substrate having a first side and a second side opposite the first side; a photodetector region within the substrate; a gate structure on the first side of the substrate over the photodetector region; a deep trench isolation (DTI) structure surrounding the photodetector region and extending from the first side of the substrate to the second side; a doped floating node region within the substrate at the first side and disposed between the gate structure and the DTI structure; and a floating node on the first side of the substrate, contacting a top surface of the DTI structure and overlying the doped floating node region.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of nanostructures formed over a substrate, and an inner spacer layer between two adjacent nanostructures. The semiconductor structure includes a source/drain (S/D) structure formed adjacent to the inner spacer layer, and a barrier layer adjacent to the inner spacer layer. The barrier layer extends from the first position to the second position, and the first position is between the inner spacer layer and the nanostructure, and the second position is between the nanostructures and the S/D structure.

Abstract: A controller includes a body and a surrounding part. The body has a control area for sending a control signal according to a movement of a thumb of a user. The surrounding part is connected to the body and used to surround and be fixed to a proximal phalange of an index finger of the user. The body is away from a joint between the proximal phalange and a metacarpal bone of the user.

Abstract: A method for dynamic adaptive threading is provided. The method comprises receiving a query request for a recommended number of threads from an application. The method comprises determining the recommended number of threads according to a resource status of a system-on-a-chip (SoC) platform. The method comprises transmitting the recommended number of threads to the application.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a fixed portion, a movable portion and a driving assembly. The fixed portion has a main axis and includes a case and a bottom. The case is made of a non-metal material. The bottom is connected to the case. The case and the bottom are arranged along the main axis. The movable portion moves relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion.

Abstract: The present disclosure is directed to a method for the fabrication of MiM capacitor structures with metallic electrodes having nitrogen-rich metal nitride layers. The method includes depositing a first electrode bilayer on a first interconnect layer disposed on a substrate, where the first electrode bilayer includes a first layer and a second layer with a different nitrogen concentration. The method also includes depositing a dielectric layer on the first electrode bilayer and depositing a second electrode bilayer on the dielectric layer where the second electrode includes a third layer and a fourth layer with a different nitrogen concentration. The method further includes patterning the first electrode bilayer, the dielectric layer, and the second electrode bilayer to form a capacitor structure on the first interconnect layer.

Abstract: An electronic device is configured to execute instructions: compiling a first AI model and second AI model(s) to a first compiled file and second compiled file(s), respectively, wherein the first compiled file comprises a first data set and a first command set, and the second compiled file(s) comprises second data set(s) and second command set(s); generating light version file(s) for the AI model(s), wherein the light version file(s) comprises the second command set(s) and data patch(es); storing the first compiled file and the light version file(s) to a storage device; loading the first compiled file from the storage device to a memory; loading the light version file(s) from the storage device to the memory; generating the second data set(s) according to the first data set and the data patch(es); and executing the second AI model(s) according to the generated second data set(s) and the second command set(s) in the memory.

Abstract: The present disclosure is directed to a method for the fabrication of MiM capacitor structures with metallic electrodes having nitrogen-rich metal nitride layers. The method includes depositing a first electrode bilayer on a first interconnect disposed on a substrate, where the first electrode includes a first layer and a second layer with a different nitrogen concentration. The method also includes depositing a dielectric layer on the first electrode bilayer and depositing a second electrode bilayer on the first interconnect where the second electrode includes a third layer and a fourth layer with a different nitrogen concentration. The method further includes patterning the first electrode bilayer, the dielectric layer, and the second electrode bilayer to form a capacitor structure on the first interconnect layer.

Abstract: Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

Abstract: An antenna array device provided, which includes a substrate, multiple antenna elements, a metal ground plate and a first isolation unit group. The multiple antenna elements are disposed on a first surface of the substrate. The multiple antenna elements have a first polarization direction and a second polarization direction opposite to the first polarization direction. The first isolation unit group is disposed between adjacent two of the multiple antenna elements. An arrangement direction of the first isolation unit group is perpendicular to the first polarization direction and the second polarization direction. The first isolation unit group is two isolation units which are adjacent, each of which comprises an outer end and an inner end opposite to the outer end. The inner end is connected to the metal ground plate disposed on a second surface of the substrate via a second via.

Abstract: A liquid reservoir includes a liquid storage chamber, a nebulizing module, a detection module, a lid, and a bubble blocking structure. The liquid storage chamber has an opening, and a bottom of the liquid storage chamber has a through hole. The nebulizing module is disposed in the through hole. The detection module is disposed within the liquid storage chamber and adjacent to the through hole. The lid is disposed on the liquid storage chamber and covers the opening. The bubble blocking structure is disposed in the liquid storage chamber, and an orthogonal projection of the bubble blocking structure that is projected to the bottom of the liquid storage chamber at least partially overlaps with the through hole.

Abstract: A portable nebulizer and a shutdown method of the portable nebulizer are provided. The portable nebulizer includes a medicine storage device, a sensing device, a nebulization device, a driving device and a processing device. The medicine storage device is configured to contain predetermined medical fluid. The sensing device is located in the medicine storage device. The nebulization device is configured to nebulize the predetermined medical fluid and simultaneously transmit a sensing signal to the sensing device. The driving device is electrically connected to the nebulization device and transmits a driving signal to the nebulization device. The processing device is electrically connected to the sensing device and the driving device, and collects electrical information of the sensing signal and electrical information of the driving signal to calculate medical fluid volume indication information.

Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.

Abstract: An antenna array device is provided, which includes a ground plate, a substrate, an antenna array, and multiple patch elements. The substrate is disposed on the ground plate. The antenna array is disposed on the substrate. And the multiple patch elements are disposed on the substrate and arranged around the antenna array, and the multiple patch elements are floating (not connected to the ground plate).

Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.