Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate, a gate structure, a first doped structure, a second doped structure, and a dielectric layer. The method includes forming a through hole in the dielectric layer. The method includes performing a physical vapor deposition process to deposit a first metal layer over the first doped structure exposed by the through hole. The method includes reacting the first metal layer with the first doped structure to form a metal semiconductor compound layer between the first metal layer and the first doped structure. The method includes removing the first metal layer. The method includes performing a chemical vapor deposition process to deposit a second metal layer in the through hole. The method includes forming a conductive structure in the through hole and over the second metal layer.

Abstract: A method of forming a semiconductor device includes forming a gate dielectric layer on a substrate; forming a barrier layer over the gate dielectric layer; treating the barrier layer to roughen an outer surface of the barrier layer, resulting in a treated barrier layer; and forming a metal layer over the treated barrier layer.

Abstract: A fin structure of a FinFET device is formed over a substrate. A first layer is formed over the fin structure. A gate layer is formed over the fin structure and over the first layer. The gate layer is patterned into a gate stack that wraps around the fin structure. A second layer is formed over the first layer and over the gate stack. A first etching process is performed to remove portions of the second layer formed over the fin structure, the first layer serves as an etching-stop layer during the first etching process. A second etching process is performed to remove portions of the first layer to expose a portion of the fin structure. A removal of the portions of the first layer does not substantially affect the second layer. A source/drain region is epitaxially grown on the exposed portion of the fin structure.

Abstract: Disclosed are a visible light communication system and a visible light communication method. In this system, a signal transmitter sends a visible light signal, and a signal light receiver capture an image of the visible light signal to recover the visible light signal according to the captured image. The signal receiver includes an image capturing module, an image processing module and a signal recovery module. The method includes: capturing an image of a visible light signal; processing the captured image of the visible light signal; determining whether there is a complete packet according to the processed image; if yes, directly recovering the visible light signal according to the processed image; but if no, executing a packet recovery process according to the processed image of the visible light signal, then obtaining the complete packet and recovering the visible light signal transmitted from the signal transmitter.

Abstract: A method of forming a semiconductor device includes receiving a structure having a substrate, a gate trench over the substrate, and a dielectric layer over the substrate and surrounding the gate trench. The method further includes forming a gate dielectric layer in the gate trench, forming a barrier layer in the gate trench and over the gate dielectric layer, and treating the barrier layer to roughen an outer surface of the barrier layer, resulting in a treated barrier layer. The method further includes forming an n-type work function metal layer over the treated barrier layer.

Abstract: A synchronous hinge device includes a first base having a first connecting portion and a first assembling portion. The first connecting portion has a first central groove, a first outer groove, a first through hole and a second through hole. A second base has a second connecting portion and a second assembling portion. The second connecting portion has a second central groove, a second outer groove, a third through hole and a fourth through hole. First, second, third, and forth shafts extending through the first, the second, the third, and the fourth through holes, respectively. A first torque element disposed between the first shaft and the third shaft; and a second torque element disposed between second shaft and the fourth shaft, wherein the first torque element has axle sleeves limiting the first distance, and the second torque element has axle sleeves limiting the second distance.

Abstract: Disclosed are a visible light communication system and a visible light communication method. In this system, a signal transmitter sends a visible light signal, and a signal light receiver capture an image of the visible light signal to recover the visible light signal according to the captured image. The signal receiver includes an image capturing module, an image processing module and a signal recovery module. The method includes: capturing an image of a visible light signal; processing the captured image of the visible light signal; determining whether there is a complete packet according to the processed image; if yes, directly recovering the visible light signal according to the processed image; but if no, executing a packet recovery process according to the processed image of the visible light signal, then obtaining the complete packet and recovering the visible light signal transmitted from the signal transmitter.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a first active region adjacent a channel, the channel, and a second active region adjacent the channel. The channel has a channel doping profile. The channel includes a central channel portion having a first dopant concentration of a first dopant and a radial channel portion surrounding the central channel portion. The radial channel portion has a second dopant concentration of a second dopant greater than the first dopant concentration. The channel comprising the central channel portion and the radial channel portion has increased voltage threshold tuning as compared to a channel that lacks a central channel portion and a radial channel portion.

Abstract: A method is provided to make a nano-silver paste. An organic acid is used as a protective agent. Silver nitrate is used as a source of silver ions to reduce silver nanoparticles on a surface protected by the organic acid. The particle size of the silver nanoparticle is 45 nanometers. In the other hand, a silver precursor of organic metal is synthesized. The organic metal is cracked at 200 celsius degrees (° C.) to fill pores left during sintering. After mixing the silver nanoparticle, the silver precursor and the solvent, the nano-silver paste is obtained. After being heated at 250° C. for 30 minutes, the nano-silver paste has a resistance of (3.09±0.61)×10?5 ?·cm. By being heated at 250° C. and applied with a pressure of 10 MPa to be hot-pressed for 30 minutes for joining copper to copper, the nano-silver paste obtains a bonding strength reaching 36 MPa.

Abstract: A method is provided to make a nano-silver paste. An organic acid is used as a protective agent. Silver nitrate is used as a source of silver ions to reduce silver nanoparticles on a surface protected by the organic acid. The particle size of the silver nanoparticle is 45 nanometers. In the other hand, a silver precursor of organic metal is synthesized. The organic metal is cracked at 200 celsius degrees (° C.) to fill pores left during sintering. After mixing the silver nanoparticle, the silver precursor and the solvent, the nano-silver paste is obtained. After being heated at 250° C. for 30 minutes, the nano-silver paste has a resistance of (3.09±0.61)×10?5 ?·cm. By being heated at 250° C. and applied with a pressure of 10 MPa to be hot-pressed for 30 minutes for joining copper to copper, the nano-silver paste obtains a bonding strength reaching 36 MPa.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a first active region adjacent a channel, the channel, and a second active region adjacent the channel. The channel has a channel doping profile. The channel includes a central channel portion having a first dopant concentration of a first dopant and a radial channel portion surrounding the central channel portion. The radial channel portion has a second dopant concentration of a second dopant greater than the first dopant concentration. The channel comprising the central channel portion and the radial channel portion has increased voltage threshold tuning as compared to a channel that lacks a central channel portion and a radial channel portion.

Abstract: A synchronous hinge device includes a first base comprising a first connecting portion and a first assembling portion, the first connecting portion comprises a first central groove, a first outer groove, a first through hole and a second through hole, the first through hole and the second through hole are formed between the first central groove and the first outer groove; a second base comprising a second connecting portion and a second assembling portion, the second connecting portion comprises a second central groove, a second outer groove, a third through hole and a fourth through hole, the third through hole and the fourth through hole are formed between the second central groove and the second outer groove; a first shaft extending through the first through hole; a second shaft extending through the second through hole; a third shaft extending through the third through hole; a fourth shaft extending through the fourth through hole; a first torque element disposed between the first shaft and the third shaf

Abstract: The invention provides modulators of the nociceptin receptor (NOP), including both agonists and antagonists. A compound of the invention can be a selective modulator of NOP with respect to the ?- and ?-opioid receptors (MOP and KOP), thus providing a therapeutic method for the treatment of conditions wherein selective NOP modulation is medically indicated and MOP or KOP modulation may be less desirable. A compound of the invention can be a NOP full agonist, partial agonist, inverse agonist, positive or negative allosteric modulator, or a functionally biased agonist. A compound of the invention can be used for the treatment of an anxiety state, post-traumatic stress disorder, addictive disorders (including overuse of alcohol, tobacco, and drugs of abuse such as cocaine, amphetamines, and opitates), misregulated food intake and/or energy expenditure, cough, sleep disorders, migraine, pain, depression, or neurodegenerative disorders such as Parkinsons disease or Alzheimers disease.

Abstract: A hinge device includes a housing comprising two half-housings, a first extending module comprising two half-members disposed in the housing, a second extending module comprising two half sliding members and disposed on an outer side of the first extending module, a sliding device disposed between the first extending module and the second extending module, an elastic member disposed between the two half housings, and a stop sheet disposed between the half-housings and having one end facing a bottom of the second extending module.

Abstract: A semiconductor package structure having hollow chamber includes a bottom substrate having a bottom baseboard and a bottom metal layer formed on a disposing area of the bottom baseboard, a connection layer formed on the bottom metal layer, and a top substrate. The bottom metal layer has at least one corner having a first and a second outer lateral surface, and an outer connection surface. A first extension line is formed from a first extreme point of the first outer lateral surface, and a second extension line is formed from a second extreme point of the second outer lateral surface. A first exposing area of the bottom baseboard is formed by connecting the first and second extreme points and a cross point of the first and second extreme points. The top substrate connects to the connection layer to form a hollow chamber between the top and bottom substrates.

Abstract: A process for manufacturing a semiconductor package having a hollow chamber includes providing a bottom substrate having a bottom plate, a ring wall and a slot, wherein the ring wall and the bottom plate form the slot; forming an under ball metallurgy layer on a surface of the ring wall; bumping a plurality of solder balls on a surface of the under ball metallurgy layer, each of the solder balls comprises a diameter, wherein a spacing is spaced apart between two adjacent solder balls; performing reflow soldering to the solder balls for making the solder balls melting and interconnecting to form a connection layer; connecting a top substrate to the bottom substrate, wherein the lot of the bottom substrate is sealed by the top substrate to form a hollow chamber used for accommodating an electronic device.

Abstract: A dual shaft hinge device includes a first shaft including a first expansion portion; a second shaft including a second expansion portion; a pair of securing plates joined to the first shaft and the second shaft respectively and connected to a display device and a main body of an electronic device respectively; torque elements connected to the first shaft and the second shaft; a limiting mechanism connected to the first shaft and the second shaft; a first helical gear formed on the first expansion portion; a second helical gear formed on the second expansion portion; a base including two through holes for the first shaft and the second shaft extending therethrough, two extending plates separated by a distance, two transverse through holes formed on the extending plates and two depressed portions formed on a back side of the base; and a middle gear rotatably disposed between the extending plates and engaging the first helical gear and the second helical gear.

Abstract: A hinge structure includes a housing comprising two half-housings disposed opposite, an opening formed on a top thereof, an inner space formed by the half-housings, a cover plate configured to cover a portion of the top and a lifting member disposed in an electronic device to cover the other portion of the top, wherein a gap is formed between the cover plate and the lifting member, each of the half housing comprises a depression and a guiding groove formed in front of the depression, and the two depressions form the inner space; two half-driving members opposite disposed, mounted in the inner space and connected to the lifting member so that the half-driving members are assembled to each other and actuate in the inner space; and a sandwiched torque member disposed between the half-driving members and comprising a guiding rod having two ends movably inserted into the half-driving members and an axial torque tube having a preset notch, wherein the axial torque tube is tightly fitted to a shaft connected to the

Abstract: A hinge structure for connecting an electronic device and a stand includes a housing mounted to the housing, a cover covering the housing and a lifting member mounted to the stand, wherein a gap is formed between the lifting member and the cover, the lifting member includes an eccentric block movably disposed in the housing, a guiding member is disposed on one end of the eccentric block and includes a arced groove through which a pin movably extending, a positioning pin is positioned in a limiting groove; in another embodiment, the lifting member includes an eccentric block having a arced plate movably disposed in a rear groove and a lateral groove of the housing, whereby the hinge structure is smoothly operated in a small gap.

Abstract: The invention provides modulators of the nociceptin receptor (NOP), including both agonists and antagonists. A compound of the invention can be a selective modulator of NOP with respect to the ?- and ?-opioid receptors (MOP and KOP), thus providing a therapeutic method for the treatment of conditions wherein selective NOP modulation is medically indicated and MOP or KOP modulation may be less desirable. A compound of the invention can be a NOP full agonist, partial agonist, inverse agonist, positive or negative allosteric modulator, or a functionally biased agonist. A compound of the invention can be used for the treatment of an anxiety state, post-traumatic stress disorder, addictive disorders (including overuse of alcohol, tobacco, and drugs of abuse such as cocaine, amphetamines, and opitates), misregulated food intake and/or energy expenditure, cough, sleep disorders, grain, pain, depression, or neurodegenerative disorders such as Parkinsons disease or Alzheimers disease.