Patents by Inventor Yen Ting Chiang

Yen Ting Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200058685
    Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. The photodiode comprises a doped layer with a first doping type and an adjoining region of the substrate with a second doping type that is different than the first doping type. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions. A multiple deep trench isolation (MDTI) structure overlies the doped layer of the photodiode. The MDTI structure comprises a stack of dielectric layers lining sidewalls of a MDTI trench. A plurality of color filters is disposed at the back-side of the substrate corresponding to the respective photodiode of the plurality of pixel regions and overlying the MDTI structure.
    Type: Application
    Filed: October 23, 2019
    Publication date: February 20, 2020
    Inventors: Wei Chuang Wu, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Yen-Ting Chiang, Chun-Yuan Chen, Shen-Hui Hong
  • Publication number: 20200035723
    Abstract: A method for forming an image sensor device structure is provided. The method includes forming a light-sensing region in a substrate, and forming an interconnect structure below a first surface of the substrate. The method also includes forming a trench in the light-sensing region from a second surface of the substrate, and forming a doping layer in the trench. The method includes forming an oxide layer in the trench and on the doping layer to form a doping region, and the doping region is inserted into the light-sensing region.
    Type: Application
    Filed: October 2, 2019
    Publication date: January 30, 2020
    Inventors: Yen-Ting CHIANG, Chun-Yuan CHEN, Hsiao-Hui TSENG, Yu-Jen WANG, Shyh-Fann TING, Wei-Chuang WU, Jen-Cheng LIU, Dun-Nian YAUNG
  • Patent number: 10510789
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor. The method includes implanting a dopant into a substrate to form a doped region and implanting one or more additional dopants into the substrate to form an image sensing element between the doped region and a front-side of the substrate. The doped region directly contacts a boundary of the image sensing element that is furthest from the front-side of the substrate. The method further includes etching the substrate to form one or more trenches extending into a back-side of the substrate. The back-side of the substrate opposes the front-side of the substrate. The method further includes filling the one or more trenches with one or more dielectric materials to form isolation structures.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
  • Patent number: 10475828
    Abstract: An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: November 12, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Ting Chiang, Chun-Yuan Chen, Hsiao-Hui Tseng, Yu-Jen Wang, Shyh-Fann Ting, Wei-Chuang Wu, Jen-Cheng Liu, Dun-Nian Yaung
  • Patent number: 10461109
    Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a first depth within the substrate, and surrounding the photodiode. A multiple deep trench isolation (MDTI) structure is disposed within the individual pixel region, extending from the back-side of the substrate to a second depth within the substrate, and overlying the photodiode. A dielectric layer fills in a BDTI trench of the BDTI structure and a MDTI trench of the MDTI structure.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: October 29, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei Chuang Wu, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Yen-Ting Chiang, Chun-Yuan Chen, Shen-Hui Hong
  • Patent number: 10396712
    Abstract: A transformer feed-back quadrature voltage controlled oscillator (QVCO) includes a first VCO; a second VCO; and a dynamic phase error correction circuit, having a plurality of coupling capacitors connected between the first and second VCOs, wherein the capacitances of the coupling capacitors are varied according to a digital control signal to correct a phase error of local oscillating (LO) signals of quadrature phases output by the first and second VCOs.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: August 27, 2019
    Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Hsiao-Chin Chen, Yen-Ting Chiang, Chien-Te Yu
  • Publication number: 20190214414
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor. The method includes implanting a dopant into a substrate to form a doped region and implanting one or more additional dopants into the substrate to form an image sensing element between the doped region and a front-side of the substrate. The doped region directly contacts a boundary of the image sensing element that is furthest from the front-side of the substrate. The method further includes etching the substrate to form one or more trenches extending into a back-side of the substrate. The back-side of the substrate opposes the front-side of the substrate. The method further includes filling the one or more trenches with one or more dielectric materials to form isolation structures.
    Type: Application
    Filed: March 13, 2019
    Publication date: July 11, 2019
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
  • Publication number: 20190165009
    Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a first depth within the substrate, and surrounding the photodiode. A multiple deep trench isolation (MDTI) structure is disposed within the individual pixel region, extending from the back-side of the substrate to a second depth within the substrate, and overlying the photodiode. A dielectric layer fills in a BDTI trench of the BDTI structure and a MDTI trench of the MDTI structure.
    Type: Application
    Filed: November 27, 2017
    Publication date: May 30, 2019
    Inventors: Wei Chuang Wu, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Yen-Ting Chiang, Chun-Yuan Chen, Shen-Hui Hong
  • Publication number: 20190165729
    Abstract: A transformer feed-back quadrature voltage controlled oscillator (QVCO) includes a first VCO; a second VCO; and a dynamic phase error correction circuit, having a plurality of coupling capacitors connected between the first and second VCOs, wherein the capacitances of the coupling capacitors are varied according to a digital control signal to correct a phase error of local oscillating (LO) signals of quadrature phases output by the first and second VCOs.
    Type: Application
    Filed: November 29, 2017
    Publication date: May 30, 2019
    Inventors: HSIAO-CHIN CHEN, YEN-TING CHIANG, CHIEN-TE YU
  • Patent number: 10304886
    Abstract: The present disclosure relates to a CMOS image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A back-side deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a position within the substrate. The BDTI structure comprises a doped layer lining a sidewall surface of a deep trench and a dielectric fill layer filling a remaining space of the deep trench. By forming the disclosed BDTI structure that functions as a doped well and an isolation structure, the implantation processes from a front-side of the substrate is simplified, and thus the exposure resolution, the full well capacity of the photodiode, and the pinned voltage is improved.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: May 28, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yen-Ting Chiang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jen-Cheng Liu, Yu-Jen Wang, Chun-Yuan Chen
  • Publication number: 20190157322
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a semiconductor substrate having a front surface and a back surface facing opposite to the front surface; a filling material extending from the front surface into the semiconductor substrate without penetrating through the semiconductor substrate, the filling material including an upper portion and a lower portion, the upper portion being in contact with the semiconductor substrate; and an epitaxial layer lined between the lower portion of the filling material and the semiconductor substrate. An associated manufacturing method is also disclosed.
    Type: Application
    Filed: February 23, 2018
    Publication date: May 23, 2019
    Inventors: SHENG-CHAN LI, I-NAN CHEN, TZU-HSIANG CHEN, YU-JEN WANG, YEN-TING CHIANG, CHENG-HSIEN CHOU, CHENG-YUAN TSAI
  • Publication number: 20190157319
    Abstract: An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.
    Type: Application
    Filed: January 11, 2018
    Publication date: May 23, 2019
    Inventors: Yen-Ting CHIANG, Chun-Yuan CHEN, Hsiao-Hui TSENG, Yu-Jen WANG, Shyh-Fann TING, Wei-Chuang WU, Jen-Cheng LIU, Dun-Nian YAUNG
  • Publication number: 20190139997
    Abstract: A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.
    Type: Application
    Filed: March 27, 2018
    Publication date: May 9, 2019
    Inventors: YEN-TING CHIANG, CHUN-YUAN CHEN, HSIAO-HUI TSENG, SHENG-CHAN LI, YU-JEN WANG, WEI CHUANG WU, SHYH-FANN TING, JEN-CHENG LIU, DUN-NIAN YAUNG
  • Patent number: 10276618
    Abstract: The present disclosure, in some embodiments, relates to a CMOS image sensor. The CMOS image sensor has an image sensing element disposed within a substrate. A plurality of isolation structures are arranged along a back-side of the substrate and are separated from opposing sides of the image sensing element by non-zero distances. A doped region is laterally arranged between the plurality of isolation structures. The doped region is also vertically arranged between the image sensing element and the back-side of the substrate. The doped region physically contacts the image sensing element.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
  • Publication number: 20190096929
    Abstract: The present disclosure relates to a CMOS image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A back-side deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a position within the substrate. The BDTI structure comprises a doped layer lining a sidewall surface of a deep trench and a dielectric fill layer filling a remaining space of the deep trench. By forming the disclosed BDTI structure that functions as a doped well and an isolation structure, the implantation processes from a front-side of the substrate is simplified, and thus the exposure resolution, the full well capacity of the photodiode, and the pinned voltage is improved.
    Type: Application
    Filed: October 27, 2017
    Publication date: March 28, 2019
    Inventors: Yen-Ting Chiang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jen-Cheng Liu, Yu-Jen Wang, Chun-Yuan Chen
  • Patent number: 10147752
    Abstract: In some embodiments, the present disclosure relates to a method of forming a back-side image (BSI) sensor. The method may be performed by forming an image sensing element within a substrate and forming a pixel-level memory node at a position within the substrate that is laterally offset from the image sensing element. A back-side of the substrate is etched to form one or more trenches that are laterally separated from the image sensing element by the substrate and that vertically overlie the pixel-level memory node. A reflective material is formed within the one or more trenches.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: December 4, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Shyh-Fann Ting, Wei Chuang Wu, Yen-Ting Chiang, Kuan-Tsun Chen
  • Patent number: 10097136
    Abstract: A transformer feed-back quadrature voltage controlled oscillator (QVCO) includes a first VCO; a second VCO; and a dynamic phase error correction circuit, having a plurality of coupling capacitors connected between the first and second VCOs, wherein the capacitances of the coupling capacitors are varied according to a digital control signal to correct a phase error of local oscillating (LO) signals of quadrature phases output by the first and second VCOs.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: October 9, 2018
    Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Hsiao-Chin Chen, Yen-Ting Chiang, Chien-Te Yu
  • Patent number: 10062720
    Abstract: The present disclosure relates to an integrated circuit, and an associated method of formation. In some embodiments, the integrated circuit comprises a deep trench grid disposed at a back side of a substrate. A passivation layer lines the deep trench grid within the substrate. The passivation layer includes a first high-k dielectric layer and a second high-k dielectric layer disposed over the first high-k dielectric layer. A first dielectric layer is disposed over the passivation layer, lining the deep trench grid and extending over an upper surface of the substrate. A second dielectric layer is disposed over the first dielectric layer and enclosing remaining spaces of the deep trench grid to form air-gaps at lower portions of the deep trench grid. The air-gaps are sealed by the first dielectric layer or the second dielectric layer below the upper surface of the substrate.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: August 28, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yen-Ting Chiang, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Chih-Hui Huang, Shyh-Fann Ting, Shih Pei Chou, Sheng-Chan Li
  • Publication number: 20180204862
    Abstract: The present disclosure, in some embodiments, relates to a CMOS image sensor. The CMOS image sensor has an image sensing element disposed within a substrate. A plurality of isolation structures are arranged along a back-side of the substrate and are separated from opposing sides of the image sensing element by non-zero distances. A doped region is laterally arranged between the plurality of isolation structures. The doped region is also vertically arranged between the image sensing element and the back-side of the substrate. The doped region physically contacts the image sensing element.
    Type: Application
    Filed: March 13, 2018
    Publication date: July 19, 2018
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
  • Patent number: 9954022
    Abstract: The present disclosure relates to a CMOS image sensor having a doped region, arranged between deep trench isolation structures and an image sensing element, and an associated method of formation. In some embodiments, the CMOS image sensor has a pixel region disposed within a semiconductor substrate. The pixel region has an image sensing element configured to convert radiation into an electric signal. A plurality of back-side deep trench isolation (BDTI) structures extend into the semiconductor substrate on opposing sides of the pixel region. A doped region is laterally arranged between the BDTI structures and separates the image sensing element from the BDTI structures and the back-side of the semiconductor substrate. Separating the image sensing element from the BDTI structures prevents the image sensing element from interacting with interface defects near edges of the BDTI structures, and thereby reduces dark current and white pixel number.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: April 24, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita