Abstract: The present disclosure relates to a CMOS image sensor having a doped region, arranged between deep trench isolation structures and an image sensing element, and an associated method of formation. In some embodiments, the CMOS image sensor has a pixel region disposed within a semiconductor substrate. The pixel region has an image sensing element configured to convert radiation into an electric signal. A plurality of back-side deep trench isolation (BDTI) structures extend into the semiconductor substrate on opposing sides of the pixel region. A doped region is laterally arranged between the BDTI structures and separates the image sensing element from the BDTI structures and the back-side of the semiconductor substrate. Separating the image sensing element from the BDTI structures prevents the image sensing element from interacting with interface defects near edges of the BDTI structures, and thereby reduces dark current and white pixel number.

Abstract: A method includes performing an anisotropic etching on a semiconductor substrate to form a trench. The trench has vertical sidewalls and a rounded bottom connected to the vertical sidewalls. A damage removal step is performed to remove a surface layer of the semiconductor substrate, with the surface layer exposed to the trench. The rounded bottom of the trench is etched to form a slant straight bottom surface. The trench is filled to form a trench isolation region in the trench.

Abstract: An embodiment isolation structure includes a first passivation layer over a bottom surface and extending along sidewalls of a trench in a semiconductor substrate, wherein the first passivation layer includes a first dielectric material. The semiconductor device further includes a passivation oxide layer in the trench on the first passivation layer, wherein the passivation oxide layer includes an oxide of the first dielectric material and has a higher atomic percentage of oxygen than the first passivation layer, The semiconductor device further includes a second passivation layer in the trench on the passivation oxide layer, wherein the second passivation layer also includes the first dielectric material and has a lower atomic percentage of oxygen than the passivation oxide layer.

Abstract: A pad structure for a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. A semiconductor substrate is arranged over a back end of line (BEOL) metallization stack, and comprises a scribe line opening. A buffer layer lines the scribe line opening. A conductive pad comprises a base region and a protruding region. The base region is arranged over the buffer layer in the scribe line opening, and the protruding region protrudes from the base region into the BEOL metallization stack. A dielectric layer fills the scribe line opening over the conductive pad, and is substantially flush with an upper surface of the semiconductor substrate. Further, a method for manufacturing the pad structure, as well as the CMOS image sensor, are provided.

Abstract: A pad structure for a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. A semiconductor substrate is arranged over a back end of line (BEOL) metallization stack, and comprises a scribe line opening. A buffer layer lines the scribe line opening. A conductive pad comprises a base region and a protruding region. The base region is arranged over the buffer layer in the scribe line opening, and the protruding region protrudes from the base region into the BEOL metallization stack. A dielectric layer fills the scribe line opening over the conductive pad, and is substantially flush with an upper surface of the semiconductor substrate. Further, a method for manufacturing the pad structure, as well as the CMOS image sensor, are provided.

Abstract: A semiconductor device is provided. The semiconductor device includes metallization layers supported by a substrate, a diode and a partially doped silicon layer disposed over the metallization layers, a buffer layer disposed over the diode and the partially doped silicon layer; and an anti-reflective coating disposed over the buffer layer, the anti-reflective coating formed from a porous silicon.

Abstract: A semiconductor device is provided. The semiconductor device includes metallization layers supported by a substrate, a diode and a partially doped silicon layer disposed over the metallization layers, a buffer layer disposed over the diode and the partially doped silicon layer; and an anti-reflective coating disposed over the buffer layer, the anti-reflective coating formed from a porous silicon.

Abstract: A securities information service system comprises: a service module and a query module. The service module is used to accept a register request from a user and provide a user record. The query module is used to establish a comparison condition according to the user record. The service module is also used to accept a securities message. When the securities message satisfies the comparison condition, the service module will recommend the securities to the user. The securities information service system recommends the securities to users according to the comparison results in order to raise the users' identification and satisfaction with the recommended securities.

Abstract: A securities information service system comprises: a service module and a query module. The service module is used to accept a register request from a user and provide a user record. The query module is used to establish a comparison condition according to the user record. The service module is also used to accept a securities message. When the securities message satisfies the comparison condition, the service module will recommend the securities to the user. The securities information service system recommends the securities to users according to the comparison results in order to raise the users' identification and satisfaction with the recommended securities.