Abstract: A semiconductor device structure is provided. The semiconductor device structure includes multiple semiconductor nanostructures, and the semiconductor nanostructures include a first semiconductor material. The semiconductor device structure also includes multiple epitaxial structures extending from edges of the semiconductor nanostructures. The epitaxial structures include a second semiconductor material that is different than the first semiconductor material. The semiconductor device structure further includes a gate stack wrapped around the semiconductor nanostructures.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A host system initiates an abort of a command that has been placed into a submission queue (SQ) of the host system. The host system identifies at least one of a first outcome and a second outcome. When the first outcome indicates that the command is not completed and the second outcome indicates that the SQ entry has been fetched from the SQ, the host system sends an abort request to a storage device, and issues a cleanup request to direct the host controller to reclaim host hardware resources allocated to the command. The host system adds a completion queue (CQ) entry to a CQ and sets an overall command status (OCS) value of the CQ entry based on at least one of the first outcome and the second outcome.

Abstract: A multi-band filter includes a circuit board, a first resonator, a second resonator, and a coupling element configured to couple the first resonator with the second resonator. The coupling element includes a first coupling capacitor, a second coupling capacitor, a first short-circuited stub and a second short-circuited stub. The first coupling capacitor has two terminals electrically connected to the first portion of the first resonator and the first portion of the second resonator respectively. The second coupling capacitor has two terminals electrically connected to the second portion of the first resonator and the second portion of the second resonator respectively. The first short-circuited stub is electrically connected to the first coupling capacitor and a ground plane. The second short-circuited stub is electrically connected to the second coupling capacitor and a ground plane.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: Features relating to a vaporizer body are provided. The vaporizer body may include an outer shell that includes an inner region defined by an outer shell sidewall. A support structure is configured to fit within the inner region of the outer shell. The support structure includes a storage region defined by a top support structure, a bottom support structure, a bottom cap, and a gasket. An integrated board assembly is configured to fit within the storage region of the support structure. The integrated board assembly may include a printed circuit board assembly formed of multiple layers that form a rigid structure and that include an inner, flexible layer. A first antenna is integrated at a proximal end of the flexible layer, and a second antenna is integrated at a distal end of the flexible layer.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: The present disclosure is directed to a wafer drying system and method that detects airborne molecular contaminants in a drying gas as a feedback parameter for a single wafer or multi-wafer drying process. For example, the system comprises a wafer drying station configured to dispense a drying gas over one or more wafers to dry the one or more wafers, a valve configured to divert the drying gas to a first portion and a second portion, and an exhaust line configured to exhaust the first portion of the drying gas. The system further comprises a detector configured to receive the second portion of the drying gas and to determine a real time property of the second portion of the drying gas, and a control unit configured to control a feedback operation of the wafer drying station based on the real time property of the second portion of the drying gas.

Abstract: An integrated fan-out (InFO) package includes a die, an encapsulant, a redistribution structure, a slot antenna, an insulating layer, a plurality of conductive structures, and an antenna confinement structure. The encapsulant laterally encapsulates the die. The redistribution structure is disposed on the die and the encapsulant. The slot antenna is disposed above the redistribution structure. The insulating layer is sandwiched between the redistribution structure and the slot antenna. The conductive structures and the antenna confinement structure extend from the slot antenna to the redistribution structure.

Abstract: A semiconductor structure includes a first tier, a redistribution circuit structure, and a second tier. The first tier includes at least one first die. The redistribution circuit structure is disposed on the first tier and electrically coupled to the at least one first die, where the redistribution circuit structure has a multi-layer structure and includes a vertical connection structure continuously extending from a first side of the redistribution circuit structure to a second side of the redistribution circuit structure, and the first side is opposite to the second side along a stacking direction of the first tier and the redistribution circuit structure. The second tier includes a plurality of second dies, and is disposed on and electrically coupled to the redistribution circuit structure.

Abstract: The present invention relates to a hexatoxin peptide variant comprising a. an amino acid sequence which is at least 90% identical to any one of SEQ ID NOs: 27 to 29, wherein the amino acid sequence has at least one amino acid variant on position N27; b. an amino acid sequence which is at least 90% identical to any one of SEQ ID NOs: 2, 6, 7, 30 or 32, wherein the amino acid sequence has at least one amino acid variant on position N28; c. an amino acid sequence which is at least 90% identical to any one of SEQ ID NOs: 1, 3, 4, 5, 8 to 24 or 31, wherein the amino acid sequence has at least one amino acid variant on position N29; d. an amino acid sequence which is at least 90% identical to SEQ ID NO: 25, wherein the amino acid sequence has at least one amino acid variant on position N30; e. an amino acid sequence which is at least 90% identical to SEQ ID NOs: 26, wherein the amino acid sequence has at least one amino acid variant on position N31; or f.

Abstract: A method of manufacturing a positive electrode material has the steps of synthesizing an iron metal in a phosphoric acid solution to form an iron phosphate dispersion solution; adding a vanadium pentoxide (V2O5), a non-ionic surfactant and a carbon source to the iron phosphate dispersion solution; and adding a lithium salt to the iron phosphate dispersion solution and then grinding and dispersing it to produce a positive electrode material. By regulating the timing of the addition of vanadium pentoxide (V2O5), the present invention enables the battery made of the positive electrode material to have the advantage of higher battery performance.

Abstract: In an embodiment, a method includes: immersing a wafer in a bath within a cleaning chamber; removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber; determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

Abstract: A method for manufacturing an electronic device includes: providing a base layer, wherein the base layer includes a plurality of first dies and a plurality of second dies, and a number of the plurality of first dies is greater than a number of the plurality of second dies; forming a circuit layer on the base layer; and performing an electricity test to confirm whether the circuit layer is electrically connected to one of the plurality of second dies.

Abstract: An appressed antenna includes an antenna housing and a metal shell. The antenna housing comprising a housing and a planar antenna, where the planar antenna is bent with one part folded onto the inner surface of the housing and other part pressed onto the outer surface of the housing. The antenna housing is sleeve fitted to the metal shell with a gap between for the planar antenna to radiate. In this all-metal environment, the position of the antenna is close to the gap opening will increase radiation efficiency. By having at least a branch at the tail end of the appressed antenna, the appressed antenna can have a good return loss and antenna gain.

Abstract: A layout of a semiconductor memory device includes a substrate and a ternary content addressable memory (TCAM). The TCAM is disposed on the substrate and includes a plurality of TCAM bit cells, where at least two of the TCAM bit cells are mirror-symmetrical along an axis of symmetry, and each of the TCAM bit cells includes two storage units electrically connected to two word lines respectively, and a logic circuit electrically connected to the storage units. The logic circuit includes two first reading transistors, and two second reading transistors, where each of the second reading transistors includes a gate and source and drain regions, the source and drain regions of the second reading transistors are electrically connected to two matching lines and the first reading transistors, respectively, where the word lines are disposed parallel to and between the matching lines.

Abstract: Systems and methods for increasing the speed with which a network device can process “heartbeat” packets that are transmitted between the network device and its peers to verify that the communication links between them are active, or to detect when the communication links go down (i.e., are inactive). Received heartbeat packets are processed primarily by a switching application specific integrated circuit (ASIC) rather than a CPU of the network device. The switching ASIC identifies heartbeat sessions corresponding to received heartbeat packets and resets aging timers for these sessions if the timers have not already expired. The reduced processing and faster timing mechanism of the switching ASIC enables the network device to accommodate spikes in the received packet rate.

Abstract: A virtual reality positioning device including a casing, a plurality of lenses, and a plurality of optical positioning components is provided. The casing has a plurality of holes. The lenses are installed in the holes, respectively, where a field angle of each of the lenses is greater than or equal to 120 degrees and less than or equal to 160 degrees, and the lenses include convex lenses or Fresnel lenses. The optical positioning components are installed in the casing and aligned to the lenses, respectively. In addition, a virtual reality positioning system and manufacturing method of a virtual reality positioning device are provided.