Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: The problem of providing transistors that can be manufactured to any specified threshold voltage withing a broad range of threshold voltages without creating leakage, capacitance, or process compatibility issues is solved by introducing a buried layer of a second dielectric composition into a gate dielectric of a first dielectric composition. The second dielectric composition is selected relative to the first dielectric composition so that dipoles form around the interface of the two dielectrics. The dipoles create an electric field that causes a shift in the threshold voltage. The buried layer has a higher dielectric constant than the gate dielectric, is thinner than the gate dielectric, and is proximate the channel.

Abstract: A semiconductor device includes: a first conductive structure having sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and an insulation layer disposed between at least one of the sidewalls of the first conductive structure and respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.

Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

Abstract: Semiconductor device and methods of forming the same are provided. A semiconductor device according to one embodiment includes a first source/drain feature and a second source/drain feature, a first metal line disposed in a first dielectric layer and electrically connected to the first source/drain feature, a second metal line disposed in the first dielectric layer and electrically connected to the second source/drain feature, and a first memory element disposed over the first dielectric layer and electrically connected to the first source/drain feature by way of the first metal line. A width of the first metal line is different from a width of the second metal line. By changing the widths of the first metal line and the second metal line, a source line series resistance of a semiconductor device can be advantageously reduced without changing a pitch of two metal lines.

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

Abstract: A semiconductor device includes: a first conductive structure having sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and an insulation layer disposed between at least one of the sidewalls of the first conductive structure and respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.

Abstract: The present disclosure relates to an anti-fatigue Lactobacillus composition. The anti-fatigue Lactobacillus composition, which includes at least one of Lactobacillus brevis GKEX, Lactobacillus plantarum GKK1 and Lactobacillus johnsonii GKJ2 as an active ingredient, administered to a healthy subject for a continuous period of time, can significantly improve fatigue-related biochemical indices and prolong aerobic exercise time to exhaustion, and thus can be used as an active ingredient for preparation of various compositions for anti-fatigue and/or improving athletic ability.

Abstract: A method for high dynamic range imaging is provided. The method includes the following stages. A first image from a first sensor capable of sensing a first spectrum is received. A second image from a second sensor capable of sensing a second spectrum is received. The second spectrum has a higher wavelength range as compared to the first spectrum. A first image feature from the first image and a second image feature from the second image are retrieved. The first and second images are fused by referencing the first image feature and the second image feature to generate a final image.

Abstract: A planning method for a displaying device, comprising: read and decode a device description file with a host of a planning system; display a planning interface on a screen via the host; take an object configuration step to configure at least one graphical object to the at least one display page and set an object parameter of the at least one graphical object; generate a corresponding graphical user interface configuration file via the host. When the planning system is connected to the displaying device, the host transmits the graphical user interface configuration file to the displaying device. A microcontroller of the displaying device displays a corresponding graphical user interface on the displaying module based on the graphical user interface configuration file. In this way, the operation time for the user to plan the graphical user interface could be effectively saved.

Abstract: An alarm system an alarm method for a medical emergency are provided. The alarm method includes: obtaining a physiological signal of a user by a sensor of a portable electronic device; receiving the physiological signal from the portable electronic device, determining whether an abnormal event has occurred according to the physiological signal, and transmitting first feedback information corresponding to the physiological signal to a server in response to the abnormal event by the terminal device; and outputting an alarm message according to the first feedback information by the server.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

Abstract: A backlight module is applied to providing light to a plurality of keyswitches of a keyboard. Each keyswitch has a keycap and an elastic member abutting against the keycap. The backlight module includes a membrane circuit board and a light guide plate. The membrane circuit board has a light emitting diode corresponding to the keyswitch. The light emitting diode is located at a side of the elastic member and emits light to the keycap. The light guide plate is disposed on the membrane circuit board. The light guide plate has a slot hole for containing the light emitting diode and has a hole corresponding to the elastic member. An optical microstructure is formed on the light guide plate for guiding light of the light emitting diode to be incident to the keycap. The elastic member passes through the hole to be disposed on the membrane circuit board.

Abstract: A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.

Abstract: A semiconductor device having an improved source/drain region profile and a method for forming the same are disclosed. In an embodiment, a method includes etching one or more semiconductor fins to form one or more recesses; and forming a source/drain region in the one or more recesses, the forming the source/drain region including epitaxially growing a first semiconductor material in the one or more recesses at a temperature of 600° C. to 800° C., the first semiconductor material including doped silicon germanium; and conformally depositing a second semiconductor material over the first semiconductor material at a temperature of 300° C. to 600° C., the second semiconductor material including doped silicon germanium and having a different composition than the first semiconductor material.

Abstract: An image calibration method is applied to an image calibration device includes an image receiver and an operation processor. The image calibration method of providing a motion deblur function includes driving a first camera to capture a first image having a first exposure time, driving a second camera disposed adjacent to the first camera to capture a second image having a second exposure time different from and at least partly overlapped with the first exposure time, and fusing a first feature of the first image and a second feature of the second image to generate a fusion image.